Abstract: There is to be provided a liquid crystal drive controller with a built-in power supply circuit wherein latch-up is made difficult to arise even if one amplitude level of the segment line drive voltage is set to the ground potential and the levels of other liquid crystal drive voltages are determined accordingly. A semiconductor integrated circuit with a built-in power supply circuit, wherein a negative voltage generated in a power supply circuit is applied to a substrate or a well region as a bias voltage, is provided with a switch for temporarily applying the ground potential to the substrate or well region to be biased with the negative voltage at the time of starting up the power supply circuit.

Abstract: There is to be provided a liquid crystal drive controller with a built-in power supply circuit wherein latch-up is made difficult to arise even if one amplitude level of the segment line drive voltage is set to the ground potential and the levels of other liquid crystal drive voltages are determined accordingly. A semiconductor integrated circuit with a built-in power supply circuit, wherein a negative voltage generated in a power supply circuit is applied to a substrate or a well region as a bias voltage, is provided with a switch for temporarily applying the ground potential to the substrate or well region to be biased with the negative voltage at the time of starting up the power supply circuit.

Abstract: A two-stage decode system is provided which uses a pre-stage decoder comprising a pre-stage first decoder which decodes a bit of arbitrary part of address signals and a pre-stage second decoder which decodes the remaining bits, level shifters which respectively shift the levels of outputs of the pre-stage decoder, and post-stage decoders which respectively decode the decode outputs of the respective decoders in the pre-stage decoder, which have been level-shifted by the level shifters.

Abstract: There is to be provided a liquid crystal drive controller with a built-in power supply circuit wherein latch-up is made difficult to arise even if one amplitude level of the segment line drive voltage is set to the ground potential and the levels of other liquid crystal drive voltages are determined accordingly. A semiconductor integrated circuit with a built-in power supply circuit, wherein a negative voltage generated in a power supply circuit is applied to a substrate or a well region as a bias voltage, is provided with a switch for temporarily applying the ground potential to the substrate or well region to be biased with the negative voltage at the time of starting up the power supply circuit.

Abstract: The invention is provided to make interface logic unnecessary and simplify a control system in a serial communication system for putting a line connecting a CPU and a control IC into serial form. The serial communication system 1 of the present invention comprises a center terminal 10, connected to the CPU 50 via the CPU control bus, for converting at least the operation instructions from a parallel signal to a serial signal for transmission to the serial communication line 30, and a local terminal 20, connected to the center terminal 10 via the serial communication line 30, for reconverting at least the serially converted operation instructions back to a parallel signal for transmission to the control IC 60. The local terminal 20 comprises a CPU emulation controller 2 for providing the CPU control bus in a pseudo manner, and is connected to the control IC 60 via the pseudo CPU control bus provided by the CPU emulation controller 21.

Abstract: There is to be provided a liquid crystal drive controller with a built-in power supply circuit wherein latch-up is made difficult to arise even if one amplitude level of the segment line drive voltage is set to the ground potential and the levels of other liquid crystal drive voltages are determined accordingly. A semiconductor integrated circuit with a built-in power supply circuit, wherein a negative voltage generated in a power supply circuit is applied to a substrate or a well region as a bias voltage, is provided with a switch for temporarily applying the ground potential to the substrate or well region to be biased with the negative voltage at the time of starting up the power supply circuit.

Abstract: A semiconductor circuit with the reduced scale of circuitry and a semiconductor integrated circuit chip which is obtained by integrating the semiconductor circuit and enables chip size reduction are provided. For this purpose, a two-decode method is used. The method uses: a pre-decode circuit comprising a first decoder of the preceding stage which decodes an arbitrary bit of an address signal of eight bits and a second decoder of the preceding stage which decodes the remaining bits; level conversion circuits which shift the output of the pre-decode circuit; and post-decode circuits which decode the decode outputs of the decoders in the pre-decode circuit, level-converted through the level conversion circuits.

Abstract: By implementing reduction in power of common electrode voltages applied from a power source of a liquid crystal drive device to common electrode interconnects of a liquid crystal display panel, respectively, reduction in power consumption of the liquid crystal display panel as a whole is attained.

Abstract: There is to be provided a liquid crystal drive controller with a built-in power supply circuit wherein latch-up is made difficult to arise even if one amplitude level of the segment line drive voltage is set to the ground potential and the levels of other liquid crystal drive voltages are determined accordingly. A semiconductor integrated circuit with a built-in power supply circuit, wherein a negative voltage generated in a power supply circuit is applied to a substrate or a well region as a bias voltage, is provided with a switch for temporarily applying the ground potential to the substrate or well region to be biased with the negative voltage at the time of starting up the power supply circuit.

Abstract: In a semiconductor memory circuit device wherein each memory cell is constituted by a series circuit of a memory cell selecting MISFET and an information storing capacitor of a stacked structure, there are present in a first region as a memory cell array region a first MISFET having a gate electrode and source and drain regions; first and second capacity electrodes and a dielectric film extending onto a first insulating film on the gate electrode; a second insulating film positioned on the second capacity electrode; and a first wiring positioned on the second insulating film, while in a second region as a peripheral circuit region there are present a second MISFET having a gate electrode and source and drain regions; a first insulating film on the gate electrode; a third insulating film on the first insulating film; a second insulating film on the third insulating film; and a second wiring on the second insulating film.

Abstract: In a semiconductor memory circuit device wherein each memory cell is constituted by a series circuit of a memory cell selecting MISFET and an information storing capacitor of a stacked structure, there are present in a first region as a memory cell array region a first MISFET having a gate electrode and source and drain regions; first and second capacity electrodes and a dielectric film extending onto a first insulating film on the gate electrode; a second insulating film positioned on the second capacity electrode; and a first wiring positioned on the second insulating film, while in a second region as a peripheral circuit region there are present a second MISFET having a gate electrode and source and drain regions; a first insulating film on the gate electrode; a third insulating film on the first insulating film; a second insulating film on the third insulating film; and a second wiring on the second insulating film.

Abstract: In a semiconductor memory circuit device wherein each memory cell is constituted by a series circuit of a memory cell selecting MISFET and an information storing capacitor of a stacked structure, there are present in a first region as a memory cell array region a first MISFET having a gate electrode and source and drain regions; first and second capacity electrodes and a dielectric film extending onto a first insulating film on the gate electrode; a second insulating film positioned on the second capacity electrode; and a first wiring positioned on the second insulating film, while in a second region as a peripheral circuit region there are present a second MISFET having a gate electrode and source and drain regions; a first insulating film on the gate electrode; a third insulating film on the first insulating film; a second insulating film on the third insulating film; and a second wiring on the second insulating film.

Abstract: In a semiconductor memory circuit device wherein each memory cell is constituted by a series circuit of a memory cell selecting MISFET and an information storing capacitor of a stacked structure, there are present in a first region, which is a memory cell array region, a first MISFET having a gate electrode and source and drain regions; first and second capacitor electrodes and a dielectric film extended over a first insulating film and over the gate electrode; a second insulating film disposed on the second capacitor electrode; a third insulating film interposed between the first insulating film and first capacitor electrode; and a first wiring positioned on the second insulating film.

Abstract: A glove for escapement is disclosed, which is used for escapement along a rope at the time of occurrence of a fire or an earthquake. The glove comprises a glove body, a base member mounted on the palm side of the glove body and provided on the inner side with teeth, and a wing member having one edge pivoted to the base member and provided on the inner side with teeth capable of meshing with the teeth of the base member. The rope thus can be clamped in a meandering fashion between the teeth, and the user can smoothly slide down along the rope by reducing the clamping force applied to the rope.

Abstract: An escape glove comprising a glove having a palm portion with a heat-insulating layer thereon, together with a heat- and wear-resistant elastic guide member attached to the palm portion, the elastic guide member having a lateral groove therein proportioned to receive an escape rope therein. The elastic member is located substantially at the center of the heat-insulating sheet layer and permits the user to control relative movement between the rope and the guide member by exerting varying amounts of pressure by his hand movement.