Abstract: An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain induction porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

Abstract: A separation layer is formed on a silicon substrate. An SiGe layer serving as a strain induction layer and a silicon layer serving as a strained semiconductor layer are formed sequentially on the separation layer to prepare a first substrate. The first substrate is bonded to a second substrate made of the same material as the silicon layer of the strained semiconductor layer. The structure is separated into two parts at the separation layer. When the residue of the separation layer and the SiGe layer are removed, and the surface is planarized by hydrogen annealing, an Si substrate having a strained silicon layer on the uppermost surface is obtained.

Abstract: An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain induction porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

Abstract: This invention provides an SOI substrate manufacturing method using a transfer method (bonding and separation). A separation layer (12) is formed on a silicon substrate (11). A silicon layer (13), SiGe layer (14), silicon layer (15?), and insulating layer (21) are sequentially formed on the resultant structure to prepare a first substrate (10?). This first substrate (10?) is bonded to a second substrate (30). The bonded substrate stack is separated into two parts at the separation layer (12). Next, Ge in the SiGe layer (14) is diffused into the silicon layer (13) by hydrogen annealing. With this process, a strained SOI substrate having the SiGe layer on the insulating layer (21) and a strained silicon layer on the SiGe layer is obtained.

Abstract: A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer forming step of forming a blocking layer on the second single crystalline semiconductor, and a relaxing step of generating crystal defects at a portion deeper than the blocking layer to relax a stress acting on the second single crystalline semiconductor. The blocking layer includes, e.g., a porous layer, and prevents the crystal defects at the portion deeper than the blocking layer from propagating to the surface of the second single crystalline semiconductor.

Abstract: This invention provides an SOI substrate manufacturing method using a transfer method (bonding and separation). A separation layer (12) is formed on a silicon substrate (11). A silicon layer (13), SiGe layer (14), silicon layer (15′), and insulating layer (21) are sequentially formed on the resultant structure to prepare a first substrate (10′). This first substrate (10′) is bonded to a second substrate (30). The bonded substrate stack is separated into two parts at the separation layer (12). Next, Ge in the SiGe layer (14) is diffused into the silicon layer (13) by hydrogen annealing. With this process, a strained SOI substrate having the SiGe layer on the insulating layer (21) and a strained silicon layer on the SiGe layer is obtained.

Abstract: This invention provides an SOI substrate manufacturing method using a transfer method (bonding and separation). A separation layer (12) is formed on a silicon substrate (11). A silicon layer (13), SiGe layer (14), silicon layer (15′), and insulating layer (21) are sequentially formed on the resultant structure to prepare a first substrate (10′). This first substrate (10′) is bonded to a second substrate (30). The bonded substrate stack is separated into two parts at the separation layer (12). Next, Ge in the SiGe layer (14) is diffused into the silicon layer (13) by hydrogen annealing. With this process, a strained SOI substrate having the SiGe layer on the insulating layer (21) and a strained silicon layer on the SiGe layer is obtained.

Abstract: This invention provides an SOI substrate manufacturing method using a transfer method (bonding and separation). A separation layer (12) is formed on a silicon substrate (11). A silicon layer (13), SiGe layer (14), silicon layer (15′), and insulating layer (21) are sequentially formed on the resultant structure to prepare a first substrate (10′). This first substrate (10′) is bonded to a second substrate (30). The bonded substrate stack is separated into two parts at the separation layer (12). Next, Ge in the SiGe layer (14) is diffused into the silicon layer (13) by hydrogen annealing. With this process, a strained SOI substrate having the SiGe layer on the insulating layer (21) and a strained silicon layer on the SiGe layer is obtained.