Abstract: According to one embodiment, a semiconductor light-receiving element, includes a light-receiving part provided on a substrate and having a semiconductor multilayer structure of a circular outer shape, a optical input part formed of a peripheral portion of the semiconductor multilayer structure, and having a tapered front end, and a silicon-thin-line waveguide configured to couple light with the optical input part. The waveguide includes a linear part extending through the optical input part to an at least one area of an upper-side area and a lower-side area of the light-receiving part, and a spiral part connected to the linear part and formed in the at least one area.

Abstract: A semiconductor light-emitting device according to one embodiment includes a substrate, a first light reflection structure provided in contact with the substrate, a buried layer surrounding the first light reflection structure, an optical semiconductor structure including an active layer, provided above the first light reflection structure, a second light reflection structure provided above the optical semiconductor structure, and a pair of electrodes which supply current to the optical semiconductor structure. The surface of the first light reflection structure and the surface of the buried layer are included in the same plane.

Abstract: According to one embodiment, a semiconductor photoreceiving device includes a substrate, a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically, a semiconductor layer provided on the first structural layer and including an optical absorption layer, a reflective layer provided on the semiconductor layer, and a pair of electrodes configured to apply voltage to the optical absorption layer.

Abstract: An optical interconnection device includes a light-emitting element, a light-receiving element, and an optical waveguide. Both the light-emitting element and the light-receiving element have a layered structure and are formed on a silicon substrate. At least a portion of the light-emitting element is embedded in an insulator. At least a portion of the light-receiving element is embedded in the insulator. The optical waveguide is formed over the insulator, and is optically coupled to the light-emitting element and the light-receiving element by distributed coupling.

Abstract: An optical device according to an embodiment includes a laser light source, a first optical waveguide that propagates light being output from the laser light source, a first distribution device that distribute the light into n lights, n second optical waveguides that propagates the n lights being output from the first distribution device, n second distribution devices that distribute each of the n lights into m lights, n×m third optical waveguides arranged in a matrix form and propagates the n×m lights being output from the m second distribution devices, a control electrode that apply a voltage or current to each of the third optical waveguides, and control phase of the light propagating through the third optical waveguides, and an output end surface that output the n×m lights.

Abstract: According to one embodiment, a semiconductor light-receiving element, includes a light-receiving part provided on a substrate and having a semiconductor multilayer structure of a circular outer shape, a optical input part formed of a peripheral portion of the semiconductor multilayer structure, and having a tapered front end, and a silicon-thin-line waveguide configured to couple light with the optical input part. The waveguide includes a linear part extending through the optical input part to an at least one area of an upper-side area and a lower-side area of the light-receiving part, and a spiral part connected to the linear part and formed in the at least one area.

Abstract: An optical wiring device of an embodiment includes a semiconductor substrate having a protruding structure, an optical device disposed on the protruding structure, an insulator disposed around the protruding structure and the optical device and a first optical waveguide optically coupled to the optical device. The insulator has a refractive index lower than a refractive index of the semiconductor substrate.

Abstract: An optical transmission-reception system includes: a light-emitting element having a first semiconductor multilayer structure with a ring- or disk-like shape and generating a first optical signal and a second optical signal rotating in a direction opposite to the first optical signal; a first optical waveguide optically coupled with the light-emitting element and propagating the first optical signal; a second optical waveguide optically coupled with the light-emitting element and propagating the second optical signal; and a light-receiving element having a second semiconductor multilayer structure with a ring- or disk-like shape, optically coupled with the first and second optical waveguides, and optically receiving the first and second optical signals.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer and a laser resonator. The first semiconductor layer includes a first portion and a second portion juxtaposed with the first portion. The laser resonator is provided on the first portion and has a ring-shaped resonator structure circled along a major surface of the first semiconductor layer. The second portion guides light emitted from the laser resonator.

Abstract: An optical semiconductor device of one embodiment includes: a first semiconductor layer of a first conductivity type; an active layer provided on the first semiconductor layer and has a ring- or disk-like shape; a second semiconductor layer of a second conductivity type that is provided on the active layer and has a ring- or disk-like shape; a first electrode provided on the first semiconductor layer; and a second electrode provided on the second semiconductor layer. The first semiconductor layer includes a first region having a ring- or disk-like shape, and a second region provided around the outer circumference of the first region and has a smaller thickness than the first region. The first electrode is provided on the second region, and a groove or holes are provided in a portion of the second region located between the first region and the first electrode.

Abstract: An optical device according to an embodiment includes a laser light source, a first optical waveguide that propagates light being output from the laser light source, a first distribution device that distribute the light into n lights, n second optical waveguides that propagates the n lights being output from the first distribution device, n second distribution devices that distribute each of the n lights into m lights, n×m third optical waveguides arranged in a matrix form and propagates the n×m lights being output from the m second distribution devices, a control electrode that apply a voltage or current to each of the third optical waveguides, and control phase of the light propagating through the third optical waveguides, and an output end surface that output the n×m lights.

Abstract: An optical semiconductor device of one embodiment includes: a first semiconductor layer of a first conductivity type; an active layer provided on the first semiconductor layer and has a ring- or disk-like shape; a second semiconductor layer of a second conductivity type that is provided on the active layer and has a ring- or disk-like shape; a first electrode provided on the first semiconductor layer; and a second electrode provided on the second semiconductor layer. The first semiconductor layer includes a first region having a ring- or disk-like shape, and a second region provided around the outer circumference of the first region and has a smaller thickness than the first region. The first electrode is provided on the second region, and a groove or holes are provided in a portion of the second region located between the first region and the first electrode.

Abstract: An optical interconnection device includes a light-emitting element, a light-receiving element, and an optical waveguide. Both the light-emitting element and the light-receiving element have a layered structure and are formed on a silicon substrate. At least a portion of the light-emitting element is embedded in an insulator. At least a portion of the light-receiving element is embedded in the insulator. The optical waveguide is formed over the insulator, and is optically coupled to the light-emitting element and the light-receiving element by distributed coupling.

Abstract: A semiconductor laser of an embodiment includes: an optical resonator having a first cladding layer, a ring-shaped active layer on the first cladding layer, a ring-shaped second cladding layer on the active layer, a first electrode inside the ring shape on the first cladding layer, a ring-shaped second electrode on the second cladding layer, a first insulating layer between the first cladding layer and the active layer, formed from an inside wall toward an outside wall of the ring shape, where an outside wall side edge thereof is on an inner side than the outside wall, and a second insulating layer between the active layer and the second cladding layer, formed from the inside wall toward the outside wall, where an outside wall side edge thereof is on an inner side than the outside wall; and an optical waveguide optically coupled to the optical resonator.

Abstract: In one embodiment, a semiconductor laser includes a semiconductor laminated body formed in a ring shape and first and second electrodes. The semiconductor laminated body includes an active layer, first and second cladding layers formed on both sides of the active layer, first and second contact layers formed on the first and second cladding layers, and first and second modified layers. The first and second modified layers are formed by selectively modifying the inner peripheral sidewalls and the outer peripheral sidewalls of the first and second cladding layers so as to have a refractive index lower than the refractive indexes of the first and second cladding layers. The first and second contact layers are electrically connected to the first and second electrodes.

Abstract: An optical transmission-reception system includes: a light-emitting element having a first semiconductor multilayer structure with a ring- or disk-like shape and generating a first optical signal and a second optical signal rotating in a direction opposite to the first optical signal; a first optical waveguide optically coupled with the light-emitting element and propagating the first optical signal; a second optical waveguide optically coupled with the light-emitting element and propagating the second optical signal; and a light-receiving element having a second semiconductor multilayer structure with a ring- or disk-like shape, optically coupled with the first and second optical waveguides, and optically receiving the first and second optical signals.

Abstract: A semiconductor laser of an embodiment includes: an optical resonator having a first cladding layer, a ring-shaped active layer on the first cladding layer, a ring-shaped second cladding layer on the active layer, a first electrode inside the ring shape on the first cladding layer, a ring-shaped second electrode on the second cladding layer, a first insulating layer between the first cladding layer and the active layer, formed from an inside wall toward an outside wall of the ring shape, where an outside wall side edge thereof is on an inner side than the outside wall, and a second insulating layer between the active layer and the second cladding layer, formed from the inside wall toward the outside wall, where an outside wall side edge thereof is on an inner side than the outside wall; and an optical waveguide optically coupled to the optical resonator.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer and a laser resonator. The first semiconductor layer includes a first portion and a second portion juxtaposed with the first portion. The laser resonator is provided on the first portion and has a ring-shaped resonator structure circled along a major surface of the first semiconductor layer. The second portion guides light emitted from the laser resonator.

Abstract: In one embodiment, a semiconductor laser includes a semiconductor laminated body formed in a ring shape and first and second electrodes. The semiconductor laminated body includes an active layer, first and second cladding layers formed on both sides of the active layer, first and second contact layers formed on the first and second cladding layers, and first and second modified layers. The first and second modified layers are formed by selectively modifying the inner peripheral sidewalls and the outer peripheral sidewalls of the first and second cladding layers so as to have a refractive index lower than the refractive indexes of the first and second cladding layers. The first and second contact layers are electrically connected to the first and second electrodes.