Patents by Inventor Kazuya Yamada
Kazuya Yamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11309234Abstract: A semiconductor device includes: an oscillator including external terminals disposed on a first face with a specific distance along a first direction; an integrated circuit including a first region formed with first electrode pads along one side, and a second region formed with second electrode pads on two opposing sides of the first region; a lead frame that includes terminals at a peripheral portion, and on which the oscillator and the integrated circuit are mounted such that the external terminals, the first and second electrode pads face in a substantially same direction and such that one side of the integrated circuit is substantially parallel to the first direction; a first bonding wire that connects one external terminal to one first electrode pad; a second bonding wire that connects one terminal of one lead frame to one second electrode pad; and a sealing member that seals all of the components.Type: GrantFiled: April 6, 2020Date of Patent: April 19, 2022Assignee: LAPIS SEMICONDUCTOR CO., LTD.Inventors: Toshihisa Sone, Kazuya Yamada, Akihiro Takei, Yuichi Yoshida, Kengo Takemasa
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Patent number: 11283233Abstract: A method of fabricating a semiconductor light-emitting device includes: (a) forming a semiconductor layer including a light-emitting layer on the first surface of a substrate; (b) forming a first trench and a second trench in the semiconductor layer, the first trench extending in a first direction that is parallel to a principal plane of the substrate, and the second trench being disposed inside and parallel to the first trench; (c) forming a third trench parallel to the first trench in the second surface of the substrate opposite to the first surface of the substrate; and (d) forming a semiconductor light-emitting device by dividing the substrate. In (d), an end of at least one divided side of the semiconductor light-emitting device is in the second trench. The first trench has a first width, and the second trench has a second width. The second width is less than the first width.Type: GrantFiled: January 30, 2020Date of Patent: March 22, 2022Assignee: NUVOTON TECHNOLOGY CORPORATION JAPANInventors: Hitoshi Sato, Kazuya Yamada, Hiroki Nagai
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Publication number: 20220042582Abstract: A ball screw device includes: a screw shaft the outer peripheral surface of which has a first thread groove; a nut the inner peripheral surface of which is provided with a second thread groove that matches the first thread groove, and the outer peripheral surface of which is provided with a through hole; a plurality of balls that roll between the first thread groove and the second thread groove; a circulation component including a main body part and a pair of leg parts provided on both ends of the main body part, and that is provided on the nut; and a pin component that fixes the circulation component to the nut. Each of the leg parts is inserted into the through hole, the pin component is provided on the leg part in an overlapping manner, and the leg part is retained in the through hole by the pin component.Type: ApplicationFiled: February 12, 2020Publication date: February 10, 2022Applicant: NSK LTD.Inventors: Kanta SATO, Yasuaki ABE, Kazuya YAMADA, Motoshi SAKAI
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Patent number: 11242085Abstract: To provide a method of manufacturing a shaft for a steering device, the shaft including a spline shaft part to be coupled with an input shaft, a stopper part to be coupled with an output shaft, and an intermediate shaft part that couples the spline shaft part with the stopper part. The method includes: a step of forming a hole part recessed in an axial direction from one end of a pillar-shaped material by forging; and a step of pressing the material in which the hole part has been formed into a die to perform drawing in a radial direction on a portion of the material at which the stopper part is formed and prolonging a length along the axial direction of the hole part at the same time by forging.Type: GrantFiled: February 13, 2018Date of Patent: February 8, 2022Assignee: NSK LTD.Inventors: Tatsuya Suehiro, Kaname Yasuda, Kazuya Yamada
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Publication number: 20220013987Abstract: A semiconductor laser element includes: a first conductivity-type cladding layer; a first guide layer disposed above the first conductivity-type cladding layer; an active layer disposed above the first guide layer; and a second conductivity-type cladding layer disposed above the active layer. A window region is formed in a region of the active layer including part of at least one of the front-side end face or the rear-side end face, the first conductivity-type cladding layer consists of (AlxGa1-x)0.5In0.5P, the first guide layer consists of (AlyGa1-y)0.5In0.5P, and the second conductivity-type cladding layer consists of (AlzGa1-z)0.5In0.5P, where x, y, and z each denote an Al composition ratio, 0<x?y<z?y is satisfied, and D/L>0.03 is satisfied, where L denotes a length of the resonator and D denotes a length of the window region in the first direction.Type: ApplicationFiled: September 28, 2021Publication date: January 13, 2022Inventors: Kazuya YAMADA, Tougo NAKATANI, Hiroki NAGAI, Masayuki HATA
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Publication number: 20210384701Abstract: A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.Type: ApplicationFiled: August 23, 2021Publication date: December 9, 2021Inventors: Masayuki ONO, Katsuya SAMONJI, Tohru NISHIKAWA, Hiroshi ASAKA, Mitsuru NISHITSUJI, Kazuya YAMADA
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Patent number: 11094512Abstract: According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency poweType: GrantFiled: May 18, 2020Date of Patent: August 17, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Kazuya Yamada, Koichi Yamamoto, Naoki Yasui, Norihiko Ikeda, Isao Mori
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Patent number: 11081320Abstract: A plasma processing apparatus includes a processing chamber 101 where a wafer 114 is processed using plasma 111, a radio frequency power supply 106 configured to supply a radio frequency power for generating the plasma 111, a mechanism configured to form a magnetic field for forming ECR and to control a magnetic flux density thereof, and a sample stage 113 on which the wafer 114 is placed. The plasma processing apparatus further includes a control unit 107 configured to, based on image data of the plasma 111, monitor a height of ECR which is electron cyclotron resonance generated by an interaction between the radio frequency power and the magnetic field, and to control a frequency of the radio frequency power such that the monitored ECR height becomes a predetermined height.Type: GrantFiled: March 6, 2019Date of Patent: August 3, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Norihiko Ikeda, Naoki Yasui, Kazuya Yamada
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Publication number: 20210043424Abstract: A plasma processing apparatus includes a processing chamber in which a sample is subjected to plasma processing, a first radio frequency power supply that supplies radio frequency power for generating plasma, a sample stage on which the sample is mounted, and a second radio frequency power supply that supplies radio frequency power to the sample stage, the plasma processing apparatus further includes a DC power supply that applies a DC voltage, that is changed according to a periodically repeated waveform, to the sample stage, and the waveform of one cycle has a period in which amplitude changes by a predetermined amount or more during a predetermined time. Accordingly, charged particles on a wafer surface are removed, a trench shape with high verticality can be obtained, and damage to a film that is not to be etched inside a trench can be reduced.Type: ApplicationFiled: August 5, 2019Publication date: February 11, 2021Inventors: Isao Mori, Masaru Izawa, Naoki Yasui, Norihiko Ikeda, Kazuya Yamada
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Publication number: 20200377145Abstract: To provide a method of manufacturing a shaft for a steering device, the shaft including a spline shaft part to be coupled with an input shaft, a stopper part to be coupled with an output shaft, and an intermediate shaft part that couples the spline shaft part with the stopper part. The method includes: a step of forming a hole part recessed in an axial direction from one end of a pillar-shaped material by forging; and a step of pressing the material in which the hole part has been formed into a die to perform drawing in a radial direction on a portion of the material at which the stopper part is formed and prolonging a length along the axial direction of the hole part at the same time by forging.Type: ApplicationFiled: February 13, 2018Publication date: December 3, 2020Applicant: NSK Ltd.Inventors: Tatsuya SUEHIRO, Kaname YASUDA, Kazuya YAMADA
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Publication number: 20200290113Abstract: To provide a method of manufacturing a shaft for a steering device, the shaft including a spline shaft part to be coupled with an input shaft, a stopper part to be coupled with an output shaft, and an intermediate shaft part that couples the spline shaft part with the stopper part. The method includes: a step of forming a hole part recessed in an axial direction from one end of a pillar-shaped material by forging; and a step of pressing the material in which the hole part has been formed into a die to perform drawing in a radial direction on a portion of the material at which the spline shaft part and the intermediate shaft part are formed, and prolonging a length along the axial direction of the hole part at the same time by forging.Type: ApplicationFiled: February 13, 2018Publication date: September 17, 2020Applicant: NSK Ltd.Inventors: Tatsuya SUEHIRO, Kaname YASUDA, Kazuya YAMADA
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Publication number: 20200286715Abstract: A plasma processing apparatus includes a processing chamber 101 where a wafer 114 is processed using plasma 111, a radio frequency power supply 106 configured to supply a radio frequency power for generating the plasma 111, a mechanism configured to form a magnetic field for forming ECR and to control a magnetic flux density thereof, and a sample stage 113 on which the wafer 114 is placed. The plasma processing apparatus further includes a control unit 107 configured to, based on image data of the plasma 111, monitor a height of ECR which is electron cyclotron resonance generated by an interaction between the radio frequency power and the magnetic field, and to control a frequency of the radio frequency power such that the monitored ECR height becomes a predetermined height.Type: ApplicationFiled: March 6, 2019Publication date: September 10, 2020Inventors: Norihiko IKEDA, Naoki YASUI, Kazuya YAMADA
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Publication number: 20200279719Abstract: According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency poweType: ApplicationFiled: May 18, 2020Publication date: September 3, 2020Inventors: Kazuya YAMADA, Koichi YAMAMOTO, Naoki YASUI, Norihiko IKEDA, Isao MORI
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Patent number: 10755897Abstract: In a plasma processing apparatus, a placement electrode includes an inner peripheral electrode for electrostatically adsorbing a wafer and an outer peripheral electrode disposed outside the inner peripheral electrode for electrostatically adsorbing the wafer, and a DC power supply unit on which the wafer is placed supplies a first radio frequency power to the inner peripheral electrode via an inner peripheral transmission path. A DC power supply unit supplies a second radio frequency power having the same frequency as the frequency of the first radio frequency power to the outer peripheral electrode via an outer peripheral transmission path. An electromagnetic wave generating power supply supplies a third radio frequency power for generating plasma.Type: GrantFiled: August 31, 2018Date of Patent: August 25, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Norihiko Ikeda, Kazuya Yamada, Naoki Yasui
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Publication number: 20200235046Abstract: A semiconductor device includes: an oscillator including external terminals disposed on a first face with a specific distance along a first direction; an integrated circuit including a first region formed with first electrode pads along one side, and a second region formed with second electrode pads on two opposing sides of the first region; a lead frame that includes terminals at a peripheral portion, and on which the oscillator and the integrated circuit are mounted such that the external terminals, the first and second electrode pads face in a substantially same direction and such that one side of the integrated circuit is substantially parallel to the first direction; a first bonding wire that connects one external terminal to one first electrode pad; a second bonding wire that connects one terminal of one lead frame to one second electrode pad; and a sealing member that seals all of the components.Type: ApplicationFiled: April 6, 2020Publication date: July 23, 2020Applicant: LAPIS Semiconductor Co., Ltd.Inventors: Toshihisa SONE, Kazuya YAMADA, Akihiro TAKEI, Yuichi YOSHIDA, Kengo TAKEMASA
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Patent number: 10699884Abstract: According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency poweType: GrantFiled: March 13, 2018Date of Patent: June 30, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Kazuya Yamada, Koichi Yamamoto, Naoki Yasui, Norihiko Ikeda, Isao Mori
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Publication number: 20200169058Abstract: A method of fabricating a semiconductor light-emitting device includes: (a) forming a semiconductor layer including a light-emitting layer on the first surface of a substrate; (b) forming a first trench and a second trench in the semiconductor layer, the first trench extending in a first direction that is parallel to a principal plane of the substrate, and the second trench being disposed inside and parallel to the first trench; (c) forming a third trench parallel to the first trench in the second surface of the substrate opposite to the first surface of the substrate; and (d) forming a semiconductor light-emitting device by dividing the substrate. In (d), an end of at least one divided side of the semiconductor light-emitting device is in the second trench. The first trench has a first width, and the second trench has a second width. The second width is less than the first width.Type: ApplicationFiled: January 30, 2020Publication date: May 28, 2020Inventors: Hitoshi SATO, Kazuya YAMADA, Hiroki NAGAI
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Patent number: 10622944Abstract: A semiconductor device includes an electronic component that includes an oscillator and has terminals on one face. A semiconductor chip is electrically connected to the electronic component and also includes terminals on one face thereof. The electronic component and the semiconductor chip are mounted to a mounting base such that the terminals of the electronic component and the terminals of the semiconductor chip face in the same direction. First bonding wires are connected to the terminals of the semiconductor chip, and second bonding wires having an apex height smaller than that of the first bonding wires connect the terminals of the electronic component to the terminals of the semiconductor chip. A sealing member completely seals within at least the electronic component.Type: GrantFiled: February 15, 2019Date of Patent: April 14, 2020Assignee: LAPIS SEMICONDUCTOR CO., LTD.Inventors: Kengo Takemasa, Yuichi Yoshida, Toshihisa Sone, Kazuya Yamada, Akihiro Takei
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Patent number: 10615108Abstract: A semiconductor device includes: an oscillator including external terminals disposed on a first face with a specific distance along a first direction; an integrated circuit including a first region formed with first electrode pads along one side, and a second region formed with second electrode pads on two opposing sides of the first region; a lead frame that includes terminals at a peripheral portion, and on which the oscillator and the integrated circuit are mounted such that the external terminals, the first and second electrode pads face in a substantially same direction and such that one side of the integrated circuit is substantially parallel to the first direction; a first bonding wire that connects one external terminal to one first electrode pad; a second bonding wire that connects one terminal of one lead frame to one second electrode pad; and a sealing member that seals all of the components.Type: GrantFiled: January 18, 2016Date of Patent: April 7, 2020Assignee: LAPIS SEMICONDUCTOR CO., LTD.Inventors: Toshihisa Sone, Kazuya Yamada, Akihiro Takei, Yuichi Yoshida, Kengo Takemasa
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Publication number: 20200062291Abstract: A shaft for a steering device has a first portion, a second portion, and a third portion that is a shaft integrated with the first portion and the second portion and couples the first portion and the second portion in a first direction. The outer diameter of the third portion is smaller than the length of the second portion in a second direction intersecting with the first direction, and is constant across a direction extending along the first direction. The hardness of the third portion is greater than the hardness of the second portion, and is constant across the direction extending along the first direction.Type: ApplicationFiled: June 22, 2017Publication date: February 27, 2020Applicant: NSK Ltd.Inventors: Kaname YASUDA, Tatsuya SUEHIRO, Kazuya YAMADA