Abstract: This invention provides a power amplifier device that satisfies both of delivering a high output and reducing the chip area occupied by the power amplifier device. The power amplifier device formed over a substrate comprises primary inductors arranged in a generally circular geometry, a ground pattern, transistor pairs, and a secondary inductor. The ground pattern is provided to extend from a portion of a region inside the circular primary inductor into regions outside the primary inductor, when viewed from the direction perpendicular to the substrate, and grounded at a plurality of points in the regions outside the primary inductor. To both ends of each primary inductor, first main electrodes of first and second transistors forming a transistor pair in linkage with the primary inductor are coupled respectively.

Abstract: A magnetic detection apparatus includes a first comparison circuit that waveform-shapes the amplitude of a detection signal from magneto-electric transducers by DC coupling, a third comparison circuit that waveform-shapes the detection signal by AC coupling, an oscillation circuit having a natural frequency, a control circuit that counts the output of the first comparison circuit by using the oscillation means, and a selection circuit that selects the output of the first comparison means and the output of the second comparison means. The control circuit counts rising from the next rising or falling from the next falling of an output rectangular wave of the first comparison circuit, and provides output to the selection circuit at the time point at which the count value reaches a desired value. The selection circuit selects and outputs the output rectangular wave of the first comparison circuit or the third comparison circuit.

Abstract: This invention provides a power amplifier device that satisfies both of delivering a high output and reducing the chip area occupied by the power amplifier device. The power amplifier device formed over a substrate comprises primary inductors arranged in a generally circular geometry, a ground pattern, transistor pairs, and a secondary inductor. The ground pattern is provided to extend from a portion of a region inside the circular primary inductor into regions outside the primary inductor, when viewed from the direction perpendicular to the substrate, and grounded at a plurality of points in the regions outside the primary inductor. To both ends of each primary inductor, first main electrodes of first and second transistors forming a transistor pair in linkage with the primary inductor are coupled respectively.

Abstract: A substrate holding unit, a plasma treatment chamber, and a nanoparticle supplying chamber are housed in a single chamber. The substrate holding unit holds a substrate. The plasma treatment chamber includes a gas passage for introducing a source gas to a vicinity of the substrate and a plasma generating unit that generates a plasma from the source gas. The nanoparticle supplying chamber includes a spraying member for spraying a nanoparticle-containing medium onto a surface of the substrate.

Abstract: A semiconductor integrated circuit includes a differential amplifier circuit receiving first and second input voltages, a latch circuit comparing a voltage received from a first output terminal of the differential amplifier circuit through a first capacitor and a voltage received from the second output terminal of the differential amplifier circuit through a second capacitor and providing a digital signal representing a result of a comparison between the first and second input voltages, and a third capacitor having a first terminal coupled to a second terminal of the first capacitor and a second terminal coupled to a second terminal of the second capacitor.

Abstract: A semiconductor integrated circuit includes a differential amplifier circuit receiving first and second input voltages, a latch circuit comparing a voltage received from a first output terminal of the differential amplifier circuit through a first capacitor and a voltage received from the second output terminal of the differential amplifier circuit through a second capacitor and providing a digital signal representing a result of a comparison between the first and second input voltages, and a third capacitor having a first terminal coupled to a second terminal of the first capacitor and a second terminal coupled to a second terminal of the second capacitor.

Abstract: A spiral inductor in which, where a spiral interconnect and an underpass interconnect intersect with each other, at least one layer of an electrically conductive film that forms the spiral interconnect is the underpass interconnect. The spiral interconnect has a smaller number of electrically conductive layers in the intersecting portion and has a wider interconnect width than the spiral interconnect in a non-intersecting portion.

Abstract: A semiconductor device includes: an inductor (1) provided with a conductor interconnection formed spirally on a semiconductor substrate (10); and a shield (6a) that is provided with a continuous conductor interconnection provided along the outer periphery of the spiral pattern of the inductor (1) while opening a portion of the conductor interconnection, and that is electrically connected to ground potential.

Abstract: A spiral inductor in which, where a spiral interconnect and an underpass interconnect intersect with each other, at least one layer of an electrically conductive film that forms the spiral interconnect is the underpass interconnect. The spiral interconnect has a smaller number of electrically conductive layers in the intersecting portion and has a wider interconnect width than the spiral interconnect a non-intersecting portion.

Abstract: A plasma processing apparatus includes a reaction chamber for processing a workpiece with plasma which is generated by using one or more gases, a gas supplying means which pulsatively supplies the gases to the reaction chamber, and an exhaust means for exhausting the reaction chamber, wherein a gas supplying direction by said gas supplying means is arranged to correspond with an exhausting direction by said exhausting means.

Abstract: A plasma processing method includes introducing at least one first processing gas into a processing chamber including a mounting stage supporting a substrate having a surface; generating a plasma in the first processing gas; introducing a second processing gas into a gas storage chamber separated from the processing chamber by a partition opposite the mounting stage and including a plurality of jet holes; and jetting neutral particles of the second processing gas from the gas storage chamber toward the substrate through the jet holes in a direction generally perpendicular to the surface of the substrate, thereby plasma processing the substrate.

Abstract: The present plasma generating apparatus includes a vacuum container an anode and a cathode formed by a plurality of electrodes, a power supply for applying a high voltage to anode and cathode, and switching elements for switching the electrodes in anode and cathode to which the high voltage is applied. The combinations of the electrodes are switched by switching elements so as to form a sheet plasma at any desired angle relative to the directional electromagnetic waves.

Abstract: A plasma generating apparatus includes a vacuum container, an anode and a cathode including multiple electrodes, a power supply for applying a high voltage to the anode and the cathode, and switching elements for switching the electrodes in the anode and the cathode to which the high voltage is applied. The combination of the electrodes are switched by switching elements to form a sheet plasma at any desired angle relative to directional electromagnetic waves.

Abstract: A plasma processing apparatus includes a processing chamber, processing gas supply means for supplying one or more processing gases into the processing chamber, plasma generating means for generating a plasma, a mounting stage for mounting an object to be processed, bias applying means for applying an electrical bias voltage to the mounting stage, a gas storage chamber being disposed in a position opposite to a face of the mounting stage and being provided with a supply system for supplying neutral particles or gases to generate the neutral particles, a partition plate for separating the gas storage chamber from the processing chamber and having jet holes for jetting the neutral particles into the processing chamber, and an exhaust system.

Abstract: A gas supply system for supplying a gas into a reaction chamber is provided with a pulse valve, a mass flow controller and a back pressure controller. The mass flow controller includes a flow meter and a variable flow control valve, and the back pressure controller includes a pressure gauge and a pressure control valve. The pulse valve, the mass flow controller and the back pressure controller are connected to a controller so that operations thereof are controlled by this controller.

Abstract: A plasma processing apparatus has a processing chamber in which are provided one or more radio frequency antennas and a grounded opposite electrode positioned opposite to a sample. The radio frequency antenna 7 is formed of a material having no more than {fraction (1/100)} the volume resistivity of a material forming the opposite electrode. The radio frequency antenna may be buried in the opposite electrode, with its surface partially exposed to the plasma. Thus, the apparatus can have an enhanced processing rate and also provide a uniform process.

Abstract: A gas supply system for supplying a gas into a reaction chamber is provided with a pulse valve, a mass flow controller and a back pressure controller. The mass flow controller includes a flow meter and a variable flow control valve, and the back pressure controller includes a pressure gauge and a pressure control valve. The pulse valve, the mass flow controller and the back pressure controller are connected to a controller so that operations thereof are controlled by this controller.

Abstract: A plasma processing apparatus has a plurality of annular permanent magnets arranged concentrically of a polarity identical in the circumferential direction at the atmosphere side of a second electrode arranged opposite to a stage on which an object to be processed is placed. Arrangement is provided so that the polarity of magnets located adjacent radially is opposite. An insulation substrate is provided between a partition panel and a processing chamber to electrically insulate a plasma generation chamber. Direct current voltage is applied in a pulsive manner to the plasma generation chamber. Thus, a plasma processing apparatus can be provided that allows formation of plasma uniformly over a large area, and processing of a specimen of a large diameter uniformly.

Abstract: A plasma processing apparatus has a plurality of annular permanent magnets arranged concentrically with the same polarity in the circumferential direction at the atmosphere side of a second electrode arranged opposite to a stage on which a specimen is placed. Arrangement is provided so that the magnets located adjacent radially have opposite polarity. Furthermore, permanent magnets are arranged at the outer circumference of a vacuum vessel corresponding to a plasma generation chamber portion. A plasma processing apparatus can be provided that allows formation of uniform plasma over a large area and uniform processing of a specimen of a large diameter.

Abstract: A plasma is supplied from a plasma source to a space between an upper electrode plate and a lower electrode plate disposed opposite to and in parallel with the upper electrode plate when producing a plasma in the space between the electrode plates for plasma processing by applying radio-frequency power to the electrode plates. The plasma source produce a plasma by inductively coupled discharge, radio-frequency discharge or microwave discharge. A plasma processing apparatus is obtained which is capable of producing a parallel-plate plasma by discharge in a space of a relatively low pressure and is capable of processing a large diameter workpiece uniformly at a high processing rate.