Patents by Inventor Kazuyoshi Hirose

Kazuyoshi Hirose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210273411
    Abstract: The present embodiment relates to a light-emitting device comprising a reflective metasurface modulating a phase for each of pixels constituting a one- or two-dimensional array. The light-emitting device comprises a surface emitting laser element, a light guide layer, and the metasurface. The metasurface has a light transmissive layer including a dielectric layer, one metal film on one surface thereof, and the other metal film on the other surface thereof. In each of unit regions corresponding to the pixels, the light transmissive layer includes a portion exposed without being covered with the metal film. The width of each unit region and the thickness of the light transmissive layer are smaller than the wavelength of the laser light to the metasurface. The metasurface modulates the phase of the laser light for each unit region. A first light output surface outputs the modulated laser.
    Type: Application
    Filed: May 14, 2019
    Publication date: September 2, 2021
    Applicant: Hamamatsu Photonics K.K.
    Inventors: Soh UENOYAMA, Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Hiroshi TANAKA
  • Publication number: 20210262787
    Abstract: A three-dimensional measurement device includes one or a plurality of light source units configured to irradiate the object to be measured SA with measurement light having a predetermined pattern, one or a plurality of image capture units configured to capture an image of the object to be measured which is irradiated with the measurement light, and a measurement unit configured to measure a three-dimensional shape of the object to be measured on the basis of results of image capture performed by the image capture units. The light source units are constituted by an S-iPMSEL of M-point oscillation.
    Type: Application
    Filed: February 12, 2021
    Publication date: August 26, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi HIROSE, Hiroki KAMEI, Takahiro SUGIYAMA, Akiyoshi WATANABE
  • Publication number: 20210249841
    Abstract: A light-emitting device according to an embodiment includes a structure for increasing an optical confinement coefficient of a layer forming a resonance mode. The light-emitting device includes a first cladding layer, an active layer, a second cladding layer, a resonance mode formation layer, and a high refractive index layer. The first cladding layer, the active layer, the second cladding layer, the resonance mode formation layer, and the high refractive index layer mainly contain nitride semiconductors. The high refractive index layer has a refractive index higher than that of any of the first cladding layer, the active layer, the second cladding layer, and the resonance mode formation layer, and has a superlattice structure in which two or more layers having refractive indices different from each other are repeatedly laminated.
    Type: Application
    Filed: June 19, 2019
    Publication date: August 12, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yuta AOKI, Kazuyoshi HIROSE, Satoru OKAWARA
  • Publication number: 20210249842
    Abstract: A light emission device of one embodiment reduces zero-order light included in output of an S-iPM laser. The light emission device includes a light emission unit and a phase modulation layer. The phase modulation layer has a base layer and modified refractive index regions each including modified refractive index elements. In each unit constituent region centered on a lattice point of an imaginary square lattice set on the phase modulation layer, the distance from the corresponding lattice point to each of the centers of gravity of the modified refractive index elements is greater than 0.30 times and is not greater than 0.50 times of the lattice spacing. In addition, the distance from the corresponding lattice point to the center of gravity of the modified refractive index elements as a whole is greater than 0 and is not greater than 0.30 times of the lattice spacing.
    Type: Application
    Filed: June 4, 2019
    Publication date: August 12, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi HIROSE, Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshiro NOMOTO, Soh UENOYAMA
  • Patent number: 11088511
    Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: August 10, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka Kurosaka, Yuu Takiguchi, Takahiro Sugiyama, Kazuyoshi Hirose, Yoshiro Nomoto
  • Publication number: 20210240052
    Abstract: A reflective dynamic metasurface of an embodiment comprises a structure enabling phase modulation in each of pixels constituting at least a one-dimensional array. The metasurface includes: a laminated structure body having a transparent conductive layer and a dielectric layer; a first metal film on one surface of the laminated structure body; a second metal film on the other surface of the laminated structure body; and a drive circuit controlling voltage applied between the first and second metal films. The first and second metal films are arranged to sandwich the pixels. The first metal film is arranged to expose a pair of window regions in one pixel, and the second metal film includes partial metal films defining the shape of each pixel and separated from each other. The drive circuit individually controls the potential of each partial metal film, thereby modulating the phase of the input light for each pixel.
    Type: Application
    Filed: May 14, 2019
    Publication date: August 5, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Soh UENOYAMA, Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Hiroshi TANAKA
  • Publication number: 20210226420
    Abstract: The present embodiment relates to a surface emitting type light-emitting element mainly including a nitride semiconductor and a layer for forming a resonance mode. The light-emitting element increases the optical confinement coefficient of a layer forming a resonance mode, includes an active layer, a phase modulation layer, and one or more high refractive index layers, and further includes, first and second cladding layers sandwiching the active layer, the phase modulation layer, and the high refractive index layer. The phase modulation layer includes a base layer and modified refractive index regions. The gravity centers of the modified refractive index regions are arranged on a straight line passing through each lattice point of a virtual square lattice and tilted with respect to the square lattice. The distance between the gravity center of each modified refractive index region and the lattice point is individually set according to the optical image.
    Type: Application
    Filed: June 5, 2019
    Publication date: July 22, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yuta AOKI, Kazuyoshi HIROSE, Satoru OKAWARA
  • Publication number: 20210226412
    Abstract: The present embodiment relates to a light emission device capable of removing zero-order light from output light of an S-iPM laser. The light emission device comprises an active layer and a phase modulation layer. The phase modulation layer includes a base layer and a plurality of modified refractive index regions. In a state in which a virtual square lattice is set on the phase modulation layer, a center of gravity of each modified refractive index region is separated from a corresponding lattice point, and a rotation angle around each lattice point that decides a position of the center of gravity of each modified refractive index region is set according to a phase distribution for forming an optical image. A lattice spacing and an emission wavelength satisfy a condition of M-point oscillation in a reciprocal lattice space of the phase modulation layer.
    Type: Application
    Filed: August 27, 2019
    Publication date: July 22, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi HIROSE, Yuu TAKIGUCHI, Takahiro SUGIYAMA, Yoshitaka KUROSAKA
  • Patent number: 11031751
    Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: June 8, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Yuu Takiguchi, Yoshiro Nomoto
  • Patent number: 11031747
    Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: June 8, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Yuu Takiguchi, Yoshiro Nomoto
  • Patent number: 10938177
    Abstract: To provide a two-dimensional photonic crystal surface emitting laser capable of improving characteristics of light to be emitted, in particular, optical output power. The two-dimensional photonic crystal surface emitting laser includes: a two-dimensional photonic crystal including a plate-shaped base member and modified refractive index regions where the modified refractive index regions have a refractive index different from that of the plate-shaped base member and are two-dimensionally and periodically arranged in the base member; an active layer provided on one side of the two-dimensional photonic crystal; and a first electrode and a second electrode provided sandwiching the two-dimensional photonic crystal and the active layer for supplying current to the active layer, where the second electrode covers a region equal to or wider than the first electrode.
    Type: Grant
    Filed: September 27, 2019
    Date of Patent: March 2, 2021
    Assignees: KYOTO UNIVERSITY, ROHM CO., LTD., HAMAMATSU PHOTONICS K.K., MITSUBISHI ELECTRIC CORPORATION
    Inventors: Susumu Noda, Hitoshi Kitagawa, Yong Liang, Akiyoshi Watanabe, Kazuyoshi Hirose
  • Publication number: 20200373739
    Abstract: The embodiment relates to a light-emitting device in which a positional relationship between a modified refractive index region's gravity-center position and the associated lattice point differs from a conventional device, and a production method. In this device, a stacked body including a light-emitting portion and a phase modulation layer optically coupled to the light-emitting portion is on a substrate. The phase modulation layer includes a base layer and plural modified refractive index regions in the base layer. Each modified refractive index region's gravity-center position locates on a virtual straight line passing through a corresponding reference lattice point among lattice points of a virtual square lattice on the base layer's design plane. A distance between the reference lattice point and the modified refractive index region's gravity center along the virtual straight line is individually set such that this device outputs light forming an optical image.
    Type: Application
    Filed: November 28, 2018
    Publication date: November 26, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Yuu TAKIGUCHI, Takahiro SUGIYAMA
  • Publication number: 20200373740
    Abstract: The present embodiment relates to a light-emitting device or the like having a structure capable of reducing one power of ±1st-order light with respect to the other power. The light-emitting device includes a substrate, a light-emitting portion, and a phase modulation layer including a base layer and a plurality of modified refractive index regions. Each of the plurality of modified refractive index regions has a three-dimensional shape defined by a first surface facing the substrate, a second surface positioned on a side opposite to the substrate with respect to the first surface, and a side surface. In the three-dimensional shape, at least one of the first surface, the second surface, and the side surface has a portion inclined with respect to a main surface.
    Type: Application
    Filed: November 28, 2018
    Publication date: November 26, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Yuu TAKIGUCHI, Takahiro SUGIYAMA
  • Publication number: 20200287350
    Abstract: A semiconductor light emitting element that can form a useful beam pattern is provided. A semiconductor laser element LD includes an active layer 4, a pair of cladding layers 2 and 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4. The phase modulation layer 6 includes a base layer 6A and different refractive index regions 6B that are different in refractive index from the base layer 6A. The different refractive index regions 6B desirably arranged in the phase modulation layer 6 enable emission of laser light including a dark line with no zero-order light.
    Type: Application
    Filed: October 2, 2018
    Publication date: September 10, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Takahiro SUGIYAMA
  • Patent number: 10734786
    Abstract: The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: August 4, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi Hirose, Yoshitaka Kurosaka, Takahiro Sugiyama, Yuu Takiguchi, Yoshiro Nomoto
  • Publication number: 20200209653
    Abstract: The present embodiment relates to a light-emitting device that enables reduction in attenuation or diffraction effect caused by a semiconductor light-emitting device with respect to modulated light outputted from a spatial light modulator, and the light-emitting device includes the semiconductor light-emitting device that outputs light from a light output surface and the reflection type spatial light modulator that modulates the light. The spatial light modulator includes a light input/output surface having the area larger than the area of a light input surface of the semiconductor light-emitting device, modulates light taken through a region facing the light output surface of the semiconductor light-emitting device in the light input/output surface, and outputs the modulated light from another region of the light input/output surface to a space other than the light input surface of the semiconductor light-emitting device.
    Type: Application
    Filed: June 13, 2018
    Publication date: July 2, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yuu TAKIGUCHI, Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Takahiro SUGIYAMA, Yoshiro NOMOTO, Soh UENOYAMA
  • Patent number: 10700495
    Abstract: The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: June 30, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi Hirose, Yoshitaka Kurosaka, Takahiro Sugiyama, Yuu Takiguchi, Yoshiro Nomoto
  • Patent number: 10613253
    Abstract: A metasurface is capable of modulating input light including a wavelength in a range of 880 nm to 40 ?m. The metasurface includes: a GaAs substrate including a light input surface into which input light is input and a light output surface facing the light input surface; an interlayer having a lower refractive index than GaAs and disposed on the light output surface side of the GaAs substrate; and a plurality of V-shaped antenna elements disposed on a side of the interlayer which is opposite to the GaAs substrate side and including a first arm and a second arm continuous with one end of the first arm.
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: April 7, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshiro Nomoto, Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Soh Uenoyama
  • Publication number: 20200106240
    Abstract: The present embodiment relates to a semiconductor light-emitting element or the like including a structure for suppressing deterioration in the quality of an optical image caused by an electrode blocking a part of light outputted from a phase modulation layer. The semiconductor light-emitting element includes a phase modulation layer having a basic layer and a plurality of modified refractive index regions, and the phase modulation layer includes a first region at least partially overlapping the electrode along a lamination direction and a second region other than the first region. Among the plurality of modified refractive index regions, only one or more modified refractive index regions in the second region are disposed so as to contribute to formation of an optical image.
    Type: Application
    Filed: December 2, 2019
    Publication date: April 2, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yuu TAKIGUCHI, Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Takahiro SUGIYAMA, Yoshiro NOMOTO, Soh UENOYAMA
  • Publication number: 20200028327
    Abstract: To provide a two-dimensional photonic crystal surface emitting laser capable of improving characteristics of light to be emitted, in particular, optical output power. The two-dimensional photonic crystal surface emitting laser includes: a two-dimensional photonic crystal including a plate-shaped base member and modified refractive index regions where the modified refractive index regions have a refractive index different from that of the plate-shaped base member and are two-dimensionally and periodically arranged in the base member; an active layer provided on one side of the two-dimensional photonic crystal; and a first electrode and a second electrode provided sandwiching the two-dimensional photonic crystal and the active layer for supplying current to the active layer, where the second electrode covers a region equal to or wider than the first electrode.
    Type: Application
    Filed: September 27, 2019
    Publication date: January 23, 2020
    Applicants: KYOTO UNIVERSITY, ROHM CO., LTD., HAMAMATSU PHOTONICS K.K., MITSUBISHI ELECTRIC CORPORATION
    Inventors: Susumu NODA, Hitoshi KITAGAWA, Yong LIANG, Akiyoshi WATANABE, Kazuyoshi HIROSE