Abstract: Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.

Abstract: The semiconductor light-emitting device includes an n-type semiconductor layer, a plurality of columnar semiconductors on the n-type semiconductor layer, a buried layer filling in a space between the columnar semiconductors, and a current suppression region suppressing a current. The columnar semiconductors has a hexagonal column and an active layer covering the hexagonal column. The hexagonal column has a hexagonal first surface and a second surface opposite to the first surface. The first surface of the columnar semiconductors faces the base layer. The second surface of the columnar semiconductors faces the current suppression region.

Abstract: To suppress current leakage between the semiconductor layer below the mask and the buried layer above the mask. To reduce the drive voltage and improve the emission efficiency by improving the efficiency of carrier injection into the active layer. The semiconductor light-emitting device includes a substrate, a mask, a columnar semiconductor, a buried layer, a cathode electrode, and an anode electrode. The substrate has a conductive substrate, an n-type semiconductor layer disposed on the conductive substrate, and a p-type semiconductor layer disposed on the n-type semiconductor layer. The p-type semiconductor layer has a high resistance, thereby enhancing insulation between the n-type semiconductor layer and the buried layer.

Abstract: A buried layer forming step includes three steps of a facet structure forming step, a c-plane forming step, and a flattening step. In the facet structure forming step, a buried layer grows to form a periodic facet structure that matches an arrangement pattern of columnar semiconductors. In the c-plane forming step, the buried layer grows such that a {0001} plane (upper surface) is formed in a region of the buried layer corresponding to an upper portion of the columnar semiconductor. In the flattening step, lateral growth of the buried layer is promoted and the c-plane formed in the c-plane forming step is widened to flatten a surface of the buried layer.

Abstract: Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.

Abstract: To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.

Abstract: Provided is a caregiving bed having a variety of usage aspects. A caregiving bed includes a bed main body, and one support platform and another support platform. The bed main body includes a rectangular pad part. Each of the support platforms is provided with an elevator device connected to the pad part to raise and lower the bed main body. Each of the support platforms is provided with a pair of support columns extending upward. A beam member is provided between the support columns of the one support platform and between the support columns of the other support platform. The distance between the pad part and the attachment part decreases when the bed main body is raised by the elevator devices, whereas the distance between the pad part and the attachment part increases when the bed main body is lowered.

Abstract: To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.

Abstract: A motor includes a motor housing, a motor body, and a damping member. The motor body includes a drive shaft. The motor body is housed in the motor housing. The damping member is disposed on an outer surface of the motor housing. The damping member includes a damping layer and a constraining layer. The damping layer is made of an organic polymeric material, and bonded to the outer surface of the motor housing. The constraining layer is made of at least one of a resin mixed with an inorganic compound and an elastomer mixed with an inorganic compound. The constraining layer is disposed on the damping layer.

Abstract: A motor includes a motor housing, a motor body, and a damping member. The motor body includes a drive shaft. The motor body is housed in the motor housing. The damping member is disposed on an outer surface of the motor housing. The damping member includes a damping layer and a constraining layer. The damping layer is made of an organic polymeric material, and bonded to the outer surface of the motor housing. The constraining layer is made of at least one of a resin mixed with an inorganic compound and an elastomer mixed with an inorganic compound. The constraining layer is disposed on the damping layer.

Abstract: Provided is a caregiving bed having a variety of usage aspects. A caregiving bed includes a bed main body, and one support platform and another support platform. The bed main body includes a rectangular pad part. Each of the support platforms is provided with an elevator device connected to the pad part to raise and lower the bed main body. Each of the support platforms is provided with a pair of support columns extending upward. A beam member is provided between the support columns of the one support platform and between the support columns of the other support platform. The distance between the pad part and the attachment part decreases when the bed main body is raised by the elevator devices, whereas the distance between the pad part and the attachment part increases when the bed main body is lowered.

Abstract: A conventional machine package faces problems concerned with costs, weight, etc. and also a problem of antinomy that an attempt to enhance the noise reducing performance increases the airflow resistance and then deteriorates the cooling performance. Providing a sound absorbing structure with the heat radiation performance ensured within a practical range and then with considerably improved noise reducing effect achieves a low-noise machine package with a downsized casing and a reduced cooling fan power.

Abstract: A conventional machine package faces problems concerned with costs, weight, etc. and also a problem of antinomy that an attempt to enhance the noise reducing performance increases the airflow resistance and then deteriorates the cooling performance. Providing a sound absorbing structure with the heat radiation performance ensured within a practical range and then with considerably improved noise reducing effect achieves a low-noise machine package with a downsized casing and a reduced cooling fan power.

Abstract: A vibration isolating device comprises a base, a plurality of support members each placed onto the base and comprised of a two series layer of an electroviscous body and an elastomeric body, and a cradle supported through these support members. These support members are provided with circuit for applying voltage to each electroviscous body, respectively.

Abstract: A noise reducing apparatus comprising a first passageway group consisting of a plurality of first passageways aligned in parallel with each other for forming a first flat wave A by sound waves having a first same phase passed through each first passageway from a sound source, and a second passageway group consisting of a plurality of second passageways aligned in parallel with each other for forming a second flat wave B by sound waves being a second same phase passed through each second passageway from the sound source, said first passageway group having positioned above said second passageway group, and the phase of said first flat wave being advanced by a phase difference of 240.degree..+-.60.degree. with respect to the phase of said second flat wave to thereby reduce noise emitted from the sound source by interference of the first and second flat waves A and B.

Abstract: A vibration damping apparatus for transportation includes a vertical direction damping device having air springs and air dampers arranged in parallel on a base and horizontal direction damping device having laminated rubbers. The vertical and horizontal damping devices are combined in series for supporting a load base. The apparatus further includes an air supply source for supplying air into the air springs, control valves provided between the air springs and the air supply source for controlling air supply into and exhaust from the air springs, displacement detecting device for detecting displacements of the load base relative to the bases, and control device for controlling the control valves on the basis of results detected by the displacement detecting device to maintain the load base horizontally and at a constant level relative to the base whatever load is loaded on the load base.

Abstract: A noise reducing device for printers including a noise reducing hollow body consisting of at least one hollow duct at one side of a sheet delivery opening opposedly arranged to a printed sheet guiding-receiving member positioned at the other side of the sheet delivery opening, and the hollow duct is oriented such that a noise outlet thereof is opened towards the upper surface of the sheet guiding-receiving member.

Abstract: A vibration free container for transportation comprises vibration isolating device which are arranged under the container and comprises a lower layer and an upper layer. The lower layer consists of at least two long laminated rubber bodies in the form of a parallelepiped extending in parallel with each other and upper layer consists of a plurality of column-shaped vibration isolators fixed between a bottom plate of the container and upper surfaces of the laminated rubber bodies. Each of the laminated rubber bodies comprises rubber layers and metal plates alternately laminated. In another aspect the vibration free container comprises an outer casing and an inner casing received in the outer casing, and the vibration insulating device is interposed between the outer and inner casing to support the inner casing relative to the outer casing.

Abstract: A vibration absorbing apparatus for reducing vibrations of a vibration damping objective comprises a vibration member excited by a piezo-ceramic element. The voltage applied to the piezo-ceramic element is controlled in accordance with the vibration state of the objective.

Abstract: A vibration control system for damping vibration of an body to be isolated against vibration. The body is supported on a movable base through the medium of vibration-damping supporting structure. The control system comprises a vibration sensor for detecting vibration of the movable base. An inverse vibration signal generating circuit includes a digital sensor and in supplied with a detection signal outputted from the vibration sensor for generating a signal with a waveform to cancel out the vibration of the body through interference therewith. An actuator is connected operatively to the movable base and the inverse vibration signal generating circuit for converting the signal derived from the latter into a mechanical vibration to be applied to the body.