Abstract: A conductive composition comprises a ? conjugated conductive polymer, a polyanion, and a hydroxy group-containing aromatic compound containing two or more hydroxy groups. An antistatic coating material comprises the conductive composition and a solvent. An antistatic coating is produced by applying the antistatic coating material. A capacitor comprises an anode composed of a porous valve metal body; a dielectric layer formed by oxidizing a surface of the anode; and a cathode formed on the dielectric layer, wherein the cathode has a solid electrolyte layer comprising the conductive composition.

Abstract: A conductive composition comprises a ? conjugated conductive polymer, a polyanion, and a hydroxy group-containing aromatic compound containing two or more hydroxy groups. An antistatic coating material comprises the conductive composition and a solvent. An antistatic coating is produced by applying the antistatic coating material. A capacitor comprises an anode composed of a porous valve metal body; a dielectric layer formed by oxidizing a surface of the anode; and a cathode formed on the dielectric layer, wherein the cathode has a solid electrolyte layer comprising the conductive composition.

Abstract: A method for manufacturing a semiconductor device, including: forming a first conductive layer on a first insulating film; forming a second insulating film so as to cover the first conductive layer; forming a resist mask on the second insulating film; forming a hole reaching the first conductive layer in the second insulating film by a first etching using the resist mask; removing the resist mask; removing the first conductive layer exposed at the bottom of the hole by a second etching, so that the hole reaches the first insulating film and the first conductive layer exposes at a side surface within the hole; forming a conductive plug in contact with the first conductive layer exposed at the side surface within the hole by burying a conductive material in the hole; and forming a second conductive layer to be connected to the conductive plug on the second insulating film.

Abstract: A conductive composition comprises a ? conjugated conductive polymer, a polyanion, and a hydroxy group-containing aromatic compound containing two or more hydroxy groups. An antistatic coating material comprises the conductive composition and a solvent. An antistatic coating is produced by applying the antistatic coating material. A capacitor comprises an anode composed of a porous valve metal body; a dielectric layer formed by oxidizing a surface of the anode; and a cathode formed on the dielectric layer, wherein the cathode has a solid electrolyte layer comprising the conductive composition.

Abstract: There is provided a method for producing a conductive polymer solution comprising: a freeze-drying step in which an aqueous conductive polymer solution containing a complex that includes a ?-conjugated conductive polymer and a polyanion is freeze dried to thereby obtain a solid complex; and a dispersion step in which an organic solvent having a water content of 4% by mass or less and an amine compound are mixed to the solid complex, followed by a dispersion treatment.

Abstract: A conductive composition comprises a ? conjugated conductive polymer, a dopant composed of polyanion, and at least one crosslinking site forming compound selected from (a) compounds having a glycidyl group and (b) compounds having a hydroxyl group and one selected from the group consisting of allyl, vinyl ether, methacryl, acryl, methacrylamide, and acrylamide groups. An antistatic coating material comprises a ? conjugated conductive polymer, polyanion, at least one crosslinking site forming compound selected form the above (a) and (b), and a solvent. An antistatic coating is formed by applying the above-mentioned antistatic coating material. In a capacitor comprising an anode composed of a valve metal porous body; a dielectric layer formed by oxidizing the surface of the anode; and a cathode formed on the dielectric layer, the cathode has a solid electrolyte layer formed by crosslinking complexes of a ? conjugated conductive polymer and a dopant composed of a polyanion.

Abstract: A capacitor including an anode composed of a valve metal and having unevenness formed in the surface thereof, a dielectric layer formed by oxidizing the surface of the anode, and a cathode formed on the surface of the dielectric layer and having a solid electrolyte layer containing a ?-conjugated conductive polymer and a polyanion, wherein a portion of, or all of, the cathode-side surface of the dielectric layer is treated with a salt.

Abstract: A capacitor having a high degree of electric strength, a high electrostatic capacity, and a low ESR, which can be readily downsized, is provided. The capacitor according to the present invention includes an anode made of porous valve metal, a dielectric layer formed by oxidizing the surface of the anode, and a solid electrolyte layer formed on the surface of the dielectric layer. The solid electrolyte layer includes a ? conjugated conductive polymer, a polyanion, and an ion-conductive compound.

Abstract: A conductive composition comprises a ? conjugated conductive polymer, a dopant, and a nitrogen-containing aromatic cyclic compound. A capacitor comprises an anode composed of a porous material of valve metal, a dielectric layer formed by oxidizing the surface of the anode, and a cathode provided on the dielectric layer and having a solid electrolyte layer containing a ? conjugated conductive polymer, which comprises an electron donor compound containing an electron donor element provided between the dielectric layer and the cathode. Another capacitor is based on the above-described capacitor, wherein the solid electrolyte layer further comprises a dopant and a nitrogen-containing aromatic cyclic compound. An antistatic coating material comprises a ? conjugated conductive polymer, a solubilizing polymer containing an anion group and/or an electron attractive group, a nitrogen-containing aromatic cyclic compound, and a solvent. An antistatic coating is formed by applying the antistatic coating material.

Abstract: A conductive composition comprises a ? conjugated conductive polymer, a dopant, and a nitrogen-containing aromatic cyclic compound. A capacitor comprises an anode composed of a porous material of valve metal, a dielectric layer formed by oxidizing the surface of the anode, and a cathode provided on the dielectric layer and having a solid electrolyte layer containing a ? conjugated conductive polymer, which comprises an electron donor compound containing an electron donor element provided between the dielectric layer and the cathode. Another capacitor is based on the above-described capacitor, wherein the solid electrolyte layer further comprises a dopant and a nitrogen-containing aromatic cyclic compound. An antistatic coating material comprises a ? conjugated conductive polymer, a solubilizing polymer containing an anion group and/or an electron attractive group, a nitrogen-containing aromatic cyclic compound, and a solvent. An antistatic coating is formed by applying the antistatic coating material.

Abstract: A conductive composition comprises a ? conjugated conductive polymer, a dopant composed of polyanion, and at least one crosslinking site forming compound selected from (a) compounds having a glycidyl group and (b) compounds having a hydroxyl group and one selected from the group consisting of allyl, vinyl ether, methacryl, acryl methacrylamide, and acrylamide groups. An antistatic coating material comprises a ? conjugated conductive polymer, polyanion, at least one crosslinking site forming compound selected form the above (a) and (b), and a solvent. An antistatic coating is formed by applying the above-mentioned antistatic coating material. In a capacitor comprising an anode composed of a valve metal porous body; a dielectric layer formed by oxidizing the suds of the anode; and a cathode formed on the dielectric layer, the cathode has a solid electrolyte layer formed by crosslinking complexes of a ? conjugated conductive polymer and a dopant composed of a polyanion.

Abstract: A conductive composition comprises a ? conjugated conductive polymer, a dopant, and a nitrogen-containing aromatic cyclic compound. A capacitor comprises an anode composed of a porous material of valve metal, a dielectric layer formed by oxidizing the surface of the anode, and a cathode provided on the dielectric layer and having a solid electrolyte layer containing a ? conjugated conductive polymer, which comprises an electron donor compound containing an electron donor element provided between the dielectric layer and the cathode. Another capacitor is based on the above-described capacitor, wherein the solid electrolyte layer further comprises a dopant and a nitrogen-containing aromatic cyclic compound. An antistatic coating material comprises a ? conjugated conductive polymer, a solubilising polymer containing an anion group and/or an electron attractive group, a nitrogen-containing aromatic cyclic compound, and a solvent. An antistatic coating is formed by applying the antistatic coating material.

Abstract: A panel attachment structure for a disk tray includes an attachment frame, a decoration panel, a spring body, a restricting mechanism and a positioning mechanism. The attachment frame is non-movably coupled to a front end portion of the disk tray. The disk tray is movable between an ejected position and a retracted position through a tray opening of a cabinet. The decoration panel is movably coupled to the attachment frame. The spring body includes a compression coil spring. The spring body elastically couples the decoration panel to the attachment frame and biases the decoration panel against the attachment frame. The restricting mechanism restricts displacement of the decoration panel relative to the attachment frame. The positioning mechanism selectively positions the decoration panel relative to the attachment frame in a predetermined position and releases the decoration panel from the predetermined position when the disk tray is retracted to the retracted position.

Abstract: The conductive polymer solution of the present invention contains a ?-conjugated conductive polymer, a solubilizable polymer, a phase transfer catalyst, and an organic solvent. The method for preparing a conductive polymer solution of the present invention comprises adding a phase transfer catalyst adding an organic solvent to an aqueous polymer solution prepared by dissolving the ?-conjugated conductive polymer and a solubilizable polymer in water.

Abstract: The conductive polymer solution of the present invention contains a ?-conjugated conductive polymer, a solubilizable polymer, a phase transfer catalyst, and an organic solvent. The method for preparing a conductive polymer solution of the present invention comprises adding a phase transfer catalyst adding an organic solvent to an aqueous polymer solution prepared by dissolving the ?-conjugated conductive polymer and a solubilizable polymer in water.

Abstract: A transparent conductive sheet for a touch panel that has a surface resistivity of not more than 1,000?, a total light transmittance of not less than 80%, and a haze of not more than 5%, and exhibits excellent levels of water resistance and adhesion between a transparent substrate and a transparent conductive layer. The transparent conductive sheet for a touch panel of the present invention includes a transparent substrate and a transparent conductive layer formed on top of the transparent substrate, wherein the transparent conductive layer contains a ?-conjugated conductive polymer, a polyanion and an ester compound or specific polymerizable compound. The transparent conductive layer may also include conductivity improvers, dopants, other resin components and/or additives as required. A conductivity improver is preferably included to improve the conductivity.

Abstract: A method of manufacturing semiconductor devices includes: preparing a semiconductor substrate over which a laminated structure including an insulating layer is formed; forming over the insulating layer a resist mask including a first opening and a second opening which is greater in width than the first opening; first etching using the resist mask to form a hole which corresponds to the first opening and penetrates the insulating layer and to form a first trench which corresponds to the second opening and is shallower than the hole; forming a deposition film so as to fill the hole; second etching to etch back the deposition film so that the insulating layer is exposed in the first trench and that the deposition film remains in the hole; and third etching using the resist mask and the remaining deposition film for masking to remove the insulating layer part exposed in the first trench so as to form a second trench penetrating the insulating layer.

Abstract: A method for manufacturing a semiconductor device, including: forming a first conductive layer on a first insulating film; forming a second insulating film so as to cover the first conductive layer; forming a resist mask on the second insulating film; forming a hole reaching the first conductive layer in the second insulating film by means of first dry etching using the resist mask; removing the resist mask; removing the first conductive layer exposed at the bottom of the hole by means of second dry etching, so that the hole reaches the first insulating film and the first conductive layer exposes at a side surface within the hole; forming a conductive plug in contact with the first conductive layer exposed at the side surface within the hole by burying a conductive material in the hole; and forming a second conductive layer to be connected to the conductive plug on the second insulating film.

Abstract: The object of the present invention is to provide a condenser that exhibits excellent conductivity of the solid electrolyte layer, and has a low ESR, a high degree of heat resistance, and a high withstand voltage. A condenser of the present invention includes an anode composed of a valve metal, a dielectric layer formed by oxidation of the surface of the anode, and a solid electrolyte layer formed on the surface of the dielectric layer, wherein the solid electrolyte layer contains a ?-conjugated conductive polymer, a polyanion, and an amide compound.

Abstract: A method of manufacturing semiconductor devices includes: preparing a semiconductor substrate over which a laminated structure including an insulating layer is formed; forming over the insulating layer a resist mask including a first opening and a second opening which is greater in width than the first opening; first etching using the resist mask to form a hole which corresponds to the first opening and penetrates the insulating layer and to form a first trench which corresponds to the second opening and is shallower than the hole; forming a deposition film so as to fill the hole; second etching to etch back the deposition film so that the insulating layer is exposed in the first trench and that the deposition film remains in the hole; and third etching using the resist mask and the remaining deposition film for masking to remove the insulating layer part exposed in the first trench so as to form a second trench penetrating the insulating layer.