Abstract: Embodiments in accordance with the present invention provide a limiter mechanism that permits the gimbal to be designed more freely than before. The head gimbal assembly (HGA) according to one embodiment of the present invention has a limiter mechanism within the silhouette of the head slider. The limiter mechanism has a limiter tab formed in the gimbal tongue and projection of the load beam. Upon receipt of an external impact, the projection locks the limiter tab, thereby limiting the deformation of the gimbal. The limiter tab is formed by fabricating a part within the silhouette of the head slider. This structure allows for freer design of the gimbal and the load beam.

Abstract: The invention prevents the deterioration of the read/write performance of a hard disk drive due to the interference between an inertial latching mechanism and an actuator when a head slider holding a magnetic head is located at a read/write position. A latching arm 22 provided with a projection 23 and included in an inertial latching mechanism 20, and a part 161 of a coil holding arm 16a included in an actuator are formed in shapes such that the latching arm 22 provided with the projection 23 does not interfere with the coil holding arm 16a having the part 161 when a head slider mounted on the actuator is located at a read/write position on a magnetic disk.

Abstract: The present invention provides a conductive composition comprising (i) a cyano group-containing polymer compound which is a copolymer of a cyano group-containing monomer and a vinyl group-containing monomer, and n-conjugated conductive polymer.

Abstract: A process for forming a stepped contact hole includes: dry-etching a portion of a silicon oxide film using a mixed gas including carbon-rich fluorocarbon gas to form a first contact hole, forming a specific film on the sidewall of the first contact hole; dry-etching the remaining portion of the silicon oxide film at the bottom of the first contact hole by using the specific film as a mask to form a second contact hole extending from the first contact hole; and removing the specific film.

Abstract: An antenna switching system includes: an antenna unit having an antenna and a switching circuit; a feeder line connected to the switching circuit; and a receiving unit connected to the feeder line. The switching circuit of the antenna unit is switched by a control signal supplied from a control signal sending portion included in the receiving unit.

Abstract: The conductive polymer solution of the present invention contains a ?-conjugated conductive polymer, a solubilizable polymer, a phase transfer catalyst, and an organic solvent. The method for preparing a conductive polymer solution of the present invention comprises adding a phase transfer catalyst adding an organic solvent to an aqueous polymer solution prepared by dissolving the ?-conjugated conductive polymer and a solubilizable polymer in water.

Abstract: The invention prevents the deterioration of the read/write performance of a hard disk drive due to the interference between an inertial latching mechanism and an actuator when a head slider holding a magnetic head is located at a read/write position. A latching arm 22 provided with a projection 23 and included in an inertial latching mechanism 20, and a part 161 of a coil holding arm 16a included in an actuator are formed in shapes such that the latching arm 22 provided with the projection 23 does not interfere with the coil holding arm 16a having the part 161 when a head slider mounted on the actuator is located at a read/write position on a magnetic disk.

Abstract: A conductive composition comprises a ? conjugated conductive polymer, a polyanion, and a hydroxy group-containing aromatic compound containing two or more hydroxy groups. An antistatic coating material comprises the conductive composition and a solvent. An antistatic coating is produced by applying the antistatic coating material. A capacitor comprises an anode composed of a porous valve metal body; a dielectric layer formed by oxidizing a surface of the anode; and a cathode formed on the dielectric layer, wherein the cathode has a solid electrolyte layer comprising the conductive composition.

Abstract: A conductive composition comprises a ? conjugated conductive polymer, a dopant composed of polyanion, and at least one crosslinking site forming compound selected from (a) compounds having a glycidyl group and (b) compounds having a hydroxyl group and one selected from the group consisting of allyl, vinyl ether, methacryl, acryl methacrylamide, and acrylamide groups. An antistatic coating material comprises a ? conjugated conductive polymer, polyanion, at least one crosslinking site forming compound selected form the above (a) and (b), and a solvent. An antistatic coating is formed by applying the above-mentioned antistatic coating material. In a capacitor comprising an anode composed of a valve metal porous body; a dielectric layer formed by oxidizing the suds of the anode; and a cathode formed on the dielectric lays, the cathode has a solid electrolyte layer formed by crosslinking complexes of a ? conjugated conductive polymer and a dopant composed of a polyanion.

Abstract: A conductive composition comprises a ? conjugated conductive polymer, a dopant, and a nitrogen-containing aromatic cyclic compound. A capacitor comprises an anode composed of a porous material of valve metal, a dielectric layer formed by oxidizing the surface of the anode, and a cathode provided on the dielectric layer and having a solid electrolyte layer containing a ? conjugated conductive polymer, which comprises an electron donor compound containing an electron donor element provided between the dielectric layer and the cathode. Another capacitor is based on the above-described capacitor, wherein the solid electrolyte layer further comprises a dopant and a nitrogen-containing aromatic cyclic compound. An antistatic coating material comprises a ? conjugated conductive polymer, a solubilizing polymer containing an anion group and/or an electron attractive group, a nitrogen-containing aromatic cyclic compound, and a solvent. An antistatic coating is formed by applying the antistatic coating material.

Abstract: The invention prevents the deterioration of the read/write performance of a hard disk drive due to the interference between an inertial latching mechanism and an actuator when a head slider holding a magnetic head is located at a read/write position. A latching arm 22 provided with a projection 23 and included in an inertial latching mechanism 20, and a part 161 of a coil holding arm 16a included in an actuator are formed in shapes such that the latching arm 22 provided with the projection 23 does not interfere with the coil holding arm 16a having the part 161 when a head slider mounted on the actuator is located at a read/write position on a magnetic disk.

Abstract: The invention prevents the deterioration of the read/write performance of a hard disk drive due to the interference between an inertial latching mechanism and an actuator when a head slider holding a magnetic head is located at a read/write position. A latching arm 22 provided with a projection 23 and included in an inertial latching mechanism 20, and a part 161 of a coil holding arm 16a included in an actuator are formed in shapes such that the latching arm 22 provided with the projection 23 does not interfere with the coil holding arm 16a having the part 161 when a head slider mounted on the actuator is located at a read/write position on a magnetic disk.

Abstract: An apparatus for reducing friction, tearing, or wrinkling of the surface of a single-ply or multiple-ply continuous medium being fed to a processing station by either sprocket engagement of an edge-perforated medium or pinch roller pressure engagement of the medium as the medium moves in a vertically-oriented path, said reduction being effectuated through selectively altering the contact path length of guides supporting the medium in a direction reducing any friction forces.

Abstract: A method for fabricating a semiconductor device including the steps of: sequentially forming an oxide film and a polycrystalline silicon film overlying a substrate; and selectively dry-etching the polycrystalline silicon film in consecutive two processes including a main etching process for dry-etching the polycrystalline silicon film under existence of Cl2, HBr and CF4 and an over-etching process for dry-etching the polycrystalline silicon film under existence of HBr and oxygen. In the process, the polycrystalline silicon film is etched in the main etching process with the excellent dimension controllability and is etched in the over etching process with the higher selective ratio between the polycrystalline silicon film and the gate oxide film.

Abstract: A method for fabricating a semiconductor device including the steps of: sequentially forming an oxide film and a polycrystalline silicon film overlying a substrate; and selectively dry-etching the polycrystalline silicon film in consecutive two processes including a main etching process for dry-etching the polycrystalline silicon film under existence of Cl2, HBr and CF4 and an over-etching process for dry-etching the polycrystalline silicon film under existence of HBr and oxygen. In the process, the polycrystalline silicon film is etched in the main etching process with the excellent dimension controllability and is etched in the over etching process with the higher selective ratio between the polycrystalline silicon film and the gate oxide film.

Abstract: An image recording apparatus includes a plurality of print engine aligned in a advance direction in which a transporting member transports a recording medium. A first one of the plurality of image-forming sections records a first detection pattern on the transporting member and a second one of the plurality of image-forming sections records a second detection pattern on the first detection pattern. A color shift detecting section detects the amount of color shift between the first and second ones of the print engines by measuring an intensity of light reflected by the first and second detection patterns. Based on the amount of color shift, a correcting section corrects a position of the image recorded on the recording medium. The detection pattern may be of different configurations, depending on the direction in which color shift occurs, i.e., traverse, advance, and oblique directions.

Abstract: A semiconductor device having minute gate electrodes is fabricated with precision. As an example, an insulating layer, a conductive layer, an organic material layer, and a photoresist layer are formed on a semiconductor substrate in this order. The photoresist layer is patterned to form photoresist patterns. The organic material layer is etched while shrinking the photoresist patterns, by using an etching gas which can etch both the photoresist patterns and the organic material layer. The organic material layer is etched and patterned by using a layer of the photoresist patterns which are shrinking as an etching mask, thereby shrunk mask patterns are formed which have mask sizes smaller than those of the photoresist patterns before being shrunk. The conductive layer is etched and patterned by using the shrunk mask patterns and the patterned organic material layer as an etching mask.

Abstract: A double super tuner for receiving television signals from conventional broadcast, CATV, satellite broadcast, and HDTV. A first frequency converter converts an input high-frequency signal in a first intermediate frequency band signal based on a first local oscillator signal. The output of the first frequency converter is band-pass filtered by a dielectric filter. A second frequency converter converts the output of the dielectric filter into a second intermediate frequency band signal based on a second local oscillator signal.

Abstract: A method of forming a trench in a semiconductor substrate by gas plasma etching having the steps of detecting and analyzing emission spectrums of gas plasma etching products and controlling the gas plasma etching based on the ratio of the emission spectrums. The etching uses a HBr/O2 gas. The ratio of emission spectrums is preferable from 1 to 2.

Abstract: In a semiconductor device manufacturing method, HBr gas (etching gas) is made plasma while the gas pressure thereof is kept to 2 mTorr or less, and ion elements of the plasma are accelerated under bias power of 150 W or more to etch a titanium silicide film 11. Thereafter, HBr gas is further made plasma while the gas pressure thereof is kept to 5 to 10 mTorr, and ion elements of the plasma are accelerated under bias power of 10 to 100 W to etch a polysilicon film 10 with the ion elements in the plasma.