Abstract: To stably form a low-resistance electrical coupling between a metal and a semiconductor. An electrical coupling structure includes: a semiconductor layer; a metal layer; and an intermediate layer that is held between the semiconductor layer and the metal layer, and includes an insulating layer provided on the semiconductor layer side and a two-dimensional material layer provided on the metal layer side.

Abstract: A complementary transistor is constituted of a first transistor TR1 and a second transistor TR2, active regions 32, 42 of the respective transistors are formed by layering first A layers 33, 43 and the first B layers 35, 45 respectively, surface regions 201, 202 provided in a base correspond to first A layers 33, 43 respectively, first B layers 35, 45 each have a conductivity type different from that of the first A layers 33, 43, and extension layers 36, 46 of the first B layer are provided on insulation regions 211,212 respectively.

Abstract: A complementary transistor is constituted of a first transistor TR1 and a second transistor TR2, active regions 32, 42 of the respective transistors are formed by layering first A layers 33, 43 and the first B layers 35, 45 respectively, surface regions 201, 202 provided in a base correspond to first A layers 33, 43 respectively, first B layers 35, 45 each have a conductivity type different from that of the first A layers 33, 43, and extension layers 36, 46 of the first B layer are provided on insulation regions 211,212 respectively.

Abstract: A chemical composition for reducing stress on a plant comprising: at least one substance (A) selected from the group consisting of compounds represented by Formula (I) and the like and a salt thereof; and a substance (B) which affects a physiological function of the plant [in Formula (I), R1 to R4 each independently represents a hydrogen atom, —SO3H, —PO3H2, glycosyl group or —COR11. R11 represents an unsubstituted or substituted C1 to C30 alkyl group or an unsubstituted or substituted C2 to C30 alkenyl group.].

Abstract: The disclosure provides a method for producing a stack of layers on a semiconductor substrate. The method includes producing a substrate a first conductive layer; and producing by ALD a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO2 layer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers. Crystallization is obtained via heat treatment. When used in a metal-insulator-metal capacitor, the stack of layers can provide improved characteristics as a consequence of the TiO2 layer being present in the sub-stack.

Abstract: A chemical composition for reducing stress on a plant comprising: at least one substance (A) selected from the group consisting of compounds represented by Formula (I) and the like and a salt thereof; and a substance (B) which affects a physiological function of the plant [in Formula (I), R1 to R4 each independently represents a hydrogen atom, —SO3H, —PO3H2, glycosyl group or —COR11. R11 represents an unsubstituted or substituted C1 to C30 alkyl group or an unsubstituted or substituted C2 to C30 alkenyl group.].

Abstract: A method of providing a plant with stress resistance, comprising applying at least one substance (A) to the plant, said at least one substance (A) being selected from the group consisting of a compound represented by Formula (I) and the like and salts thereof. Phytotoxicity of a plant due to agricultural chemicals is reduced by providing the plant with stress resistance. [In Formula (I), R1 to R4 each independently represents a hydrogen atom, —SO3H, —PO3H2, a glycosyl group or —COR11. R11 represents an unsubstituted or substituted C1 to C30 alkyl group or an unsubstituted or substituted C2 to C30 alkenyl group.].

Abstract: Novel amidine compounds which may be active ingredients in herbicides that are reliably effective at a lesser dose and highly safe, and herbicides containing these compounds as active ingredients are provided. Amidine compounds represented by a formula (1?) and herbicides containing at least one kind of these compounds as active ingredients, [wherein G is an optionally substituted nitrogen-containing heterocyclic group represented by a formula (2?) with a proviso that the number of carbons constituting the nitrogen-containing heterocycle of the nitrogen-containing heterocyclic group is 10 or less and that 2H-Indazole ring is excluded; Q? represents cyano or the like; and A? represents substituted phenyl or the like].

Abstract: The disclosure provides a method for producing a stack of layers on a semiconductor substrate. The method includes producing a substrate a first conductive layer; and producing by ALD a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO2 layer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers. Crystallization is obtained via heat treatment. When used in a metal-insulator-metal capacitor, the stack of layers can provide improved characteristics as a consequence of the TiO2 layer being present in the sub-stack.

Abstract: Novel amidine compounds which may be active ingredients in herbicides that are reliably effective at a lesser dose and highly safe, and herbicides containing these compounds as active ingredients are provided. Amidine compounds represented by a formula (1?) and herbicides containing at least one kind of these compounds as active ingredients, [wherein G is an optionally substituted nitrogen-containing heterocyclic group represented by a formula (2?) with a proviso that the number of carbons constituting the nitrogen-containing heterocycle of the nitrogen-containing heterocyclic group is 10 or less and that 2H-Indazole ring is excluded; Q? represents cyano or the like; and A? represents substituted phenyl or the like].

Abstract: A gate insulating film having a high dielectric constant, a semiconductor device provided with the gate insulating film, and a method for manufacturing such film and device are provided. The semiconductor device is provided with a group 14 (IVA) semiconductor board and a first oxide layer. The first oxide layer is composed of MO2 existing on the board, where M is a first metal species selected from the group 4 (IVB); and M?xOy, where M? is a second metal species selected from the group 3 (IIIB) and a group composed of lanthanide series, and x and y are integers decided by the oxidation number of M.

Abstract: A gate insulating film having a high dielectric constant, a semiconductor device provided with the gate insulating film, and a method for manufacturing such film and device are provided. The semiconductor device is provided with a group 14 (IVB) semiconductor board and a first oxide layer. The first oxide layer is composed of MO2 existing on the board, where M is a first metal species selected from the group 4 (IVA); and M?xOy, where M? is a second metal species selected from the group 3 (IIIA) and a group composed of lanthanide series, and x and y are integers decided by the oxidation number of M.

Abstract: The present invention is directed to substituted bicycloheptanedion e derivatives represented by a general formula ?I!; ##STR1## wherein R represents C.sub.1 -C.sub.4 alkyl, R.sup.1 represents hydrogen, C.sub.1 -C.sub.10 alkyl, C.sub.2 -C.sub.4 alkenyl, C.sub.2 -C.sub.4 alkynyl, aralkyl, C.sub.2 -C.sub.4 haloalkynyl, C.sub.1 -C.sub.4 alkoxy C.sub.1 -C.sub.4 alkyl, C.sub.1 -C.sub.4 haloalkyl, C.sub.2 -C.sub.4 haloalkenyl, etc. and R.sup.2 represents optionally substituted phenyl or optionally substituted pyridyl, the salts thereof and herbicides comprising the same as the active ingredient.

Abstract: This invention relates to substituted bicycloheptadione derivatives with high herbicidal activity which are represented by general formula (I) ##STR1## (where R.sup.1 is a lower alkyl group, a phenyl group which may be substituted, an aralkyl group which may be substituted, or a heterocyclic group which may be substituted;R.sup.2 is, same or different, a halogen, an alkoxy group, an alkylthio group, an alkylsulfonyl group, an alkyl group, an alkoxyalkyl group, or an alkoxylcarbonyl group, and n is 0 to 4;R.sup.3 and R.sup.4 are, same or different, hydrogen or a lower alkyl group).

Abstract: The invention relates to a herbicidal composition having an inert carrier and an effective amount of a compound having the formula ##STR1## wherein X is the same or different substituent selected from the group consisting of halogen, nitro, C.sub.1-6 alkyl, halo C.sub.1-6 alkyl, C.sub.1-6 alkoxy, C.sub.1-6 alkylthio and C.sub.1-6 alkylsulfonyl;n is 1, 2, 3 or 4;R.sup.1 is C.sub.1-6 alkyl which is substituted by cyano, halogen, hydroxy, C.sub.1-6 alkoxy, C.sub.1-6 alkylthio, C.sub.1-6 alkylsulfonyl or tetrahydropyranyloxy; C.sub.1-6 alkylthio, phenylthio, pyridyl or tetrahydropyranyl;R.sup.2 is C.sub.1-6 alkyl;l is 0, 1 or 2.