Patents by Inventor Kazuyuki Toyoda
Kazuyuki Toyoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120258018Abstract: There is provided a substrate procession apparatus, comprising: a processing chamber configured to house a plurality of substrates with a laminated film formed thereon which is composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a reaction tube formed so as to constitute the processing chamber; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas to the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; heating section provided so as to surround the reaction tube; and a fan configured to forcibly circulate the atmosphere in the processing chamber in a short-side direction of the plurality of glass substrates, on surfaces of the plurality of glass substrates.Type: ApplicationFiled: March 22, 2012Publication date: October 11, 2012Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Eisuke NISHITANI, Yasuo KUNII, Kazuyuki TOYODA, Hidenari YOSHIDA, Mitsunori ISHISAKA
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Patent number: 8261692Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.Type: GrantFiled: June 24, 2010Date of Patent: September 11, 2012Assignee: Hitachi Kokusai Electric Inc.Inventors: Tadashi Kontani, Kazuyuki Toyoda, Taketoshi Sato, Toru Kagaya, Nobuhito Shima, Nobuo Ishimaru, Masanori Sakai, Kazuyuki Okuda, Yasushi Yagi, Seiji Watanabe, Yasuo Kunii
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Patent number: 8227346Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.Type: GrantFiled: November 29, 2011Date of Patent: July 24, 2012Assignee: Hitachi Kokusai Electric Inc.Inventors: Hironobu Miya, Kazuyuki Toyoda, Norikazu Mizuno, Taketoshi Sato, Masanori Sakai, Masayuki Asai, Kazuyuki Okuda, Hideki Horita
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Patent number: 8193101Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a process chamber, a gas supply system, a gas discharge system, an RF (radio frequency) unit, an electrode, and a control device. The control device controls the gas supply system, the gas discharge system, and the RF unit. While the control device controls the RF unit to apply predetermined RF power to the electrode for generating plasma, the control device controls the gas supply system to supply a process gas to the process chamber alternately at a first flowrate and at a second flowrate greater than the first flowrate.Type: GrantFiled: July 14, 2009Date of Patent: June 5, 2012Assignee: Hitachi Kokusai Electric, Inc.Inventors: Taketoshi Sato, Kazuyuki Toyoda
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Publication number: 20120077350Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.Type: ApplicationFiled: November 29, 2011Publication date: March 29, 2012Inventors: Hironobu MIYA, Kazuyuki TOYODA, Norikazu Mizuno, Taketoshi Sato, Masanori Sakai, Masayuki Asai, Kazuyuki Okuda, Hideki Horita
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Publication number: 20120034790Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.Type: ApplicationFiled: March 31, 2009Publication date: February 9, 2012Inventors: Hironobu Miya, Kazuyuki Toyoda, Norikazu Mizuno, Taketoshi Sato, Masanori Sakai, Masayuki Asai, Kazuyuki Okuda, Hideki Horita
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Patent number: 8105957Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.Type: GrantFiled: March 31, 2009Date of Patent: January 31, 2012Assignee: Hitachi Kokusai Electric Inc.Inventors: Hironobu Miya, Kazuyuki Toyoda, Taketoshi Sato, Masayuki Asai, Norikazu Mizuno, Masanori Sakai, Kazuyuki Okuda, Hideki Horita
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Patent number: 8047158Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.Type: GrantFiled: October 31, 2007Date of Patent: November 1, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Tadashi Kontani, Kazuyuki Toyoda, Taketoshi Sato, Toru Kagaya, Nobuhito Shima, Nobuo Ishimaru, Masanori Sakai, Kazuyuki Okuda, Yasushi Yagi, Seiji Watanabe, Yasuo Kunii
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Patent number: 8039404Abstract: A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified numberType: GrantFiled: May 27, 2010Date of Patent: October 18, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Hironobu Miya, Kazuyuki Toyoda, Norikazu Mizuno, Taketoshi Sato, Masanori Sakai, Masayuki Asai, Kazuyuki Okuda, Hideki Horita
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Patent number: 8028652Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: March 20, 2007Date of Patent: October 4, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Patent number: 8020514Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: January 21, 2009Date of Patent: September 20, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Publication number: 20110212625Abstract: A substrate processing apparatus which is capable of improving a manufacture yield while processing a substrate with high precision, and a method of manufacturing a semiconductor device. The substrate processing apparatus includes a substrate support part provided within a process chamber and configured to support a substrate; a substrate support moving mechanism configured to move the substrate support part; a gas feeding part configured to feed a gas into the process chamber; an exhaust part configured to exhaust the gas within the process chamber; and a plasma generating part disposed to face the substrate support part.Type: ApplicationFiled: February 25, 2011Publication date: September 1, 2011Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuyuki TOYODA, Osamu KASAHARA, Yoshiro HIROSE, Hiroyuki TAKADERA, Daigi KAMIMURA
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Publication number: 20110209664Abstract: A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.Type: ApplicationFiled: May 6, 2011Publication date: September 1, 2011Inventors: Shizue Ogawa, Kazuyuki Toyoda, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Patent number: 7958842Abstract: A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.Type: GrantFiled: February 16, 2005Date of Patent: June 14, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Shizue Ogawa, Kazuyuki Toyoda, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Patent number: 7900580Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.Type: GrantFiled: October 31, 2007Date of Patent: March 8, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Tadashi Kontani, Kazuyuki Toyoda, Taketoshi Sato, Toru Kagaya, Nobuhito Shima, Nobuo Ishimaru, Masanori Sakai, Kazuyuki Okuda, Yasushi Yagi, Seiji Watanabe, Yasuo Kunii
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Patent number: 7861668Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.Type: GrantFiled: October 31, 2007Date of Patent: January 4, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
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Publication number: 20100323507Abstract: A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member (10) which is installed surrounding a processing space (1) and grounded to the earth and a pair of electrodes (4) installed inside the conductive member (10). A primary coil of an insulating transformer (7) is connected to a high-frequency power supply unit (14) and a secondary coil is connected to the electrodes (4). A switch (13) is connected to the connection line connecting the secondary coil to the electrodes (4). By setting up/cutting off the connection of the line to the earth with use of the switch (13), the region where the plasma is generated in the processing space (1) can be changed.Type: ApplicationFiled: June 22, 2010Publication date: December 23, 2010Inventors: Kazuyuki TOYODA, Nobuhito Shima, Nobuo Ishimaru, Yoshikazu Konno, Motonari Takebayashi, Takaaki Noda, Norikazu Mizuno
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Publication number: 20100263593Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.Type: ApplicationFiled: June 24, 2010Publication date: October 21, 2010Inventors: Tadashi Kontani, Kazuyuki Toyoda, Taketoshi Sato, Toru Kagaya, Nobuhito Shima, Nobuo Ishimaru, Masanori Sakai, Kazuyuki Okuda, Yasushi Yagi, Seiji Watanabe, Yasuo Kunii
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Publication number: 20100258530Abstract: A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member (10) which is installed surrounding a processing space (1) and grounded to the earth and a pair of electrodes (4) installed inside the conductive member (10). A primary coil of an insulating transformer (7) is connected to a high-frequency power supply unit (14) and a secondary coil is connected to the electrodes (4). A switch (13) is connected to the connection line connecting the secondary coil to the electrodes (4). By setting up/cutting off the connection of the line to the earth with use of the switch (13), the region where the plasma is generated in the processing space (1) can be changed.Type: ApplicationFiled: June 22, 2010Publication date: October 14, 2010Inventors: Kazuyuki TOYODA, Nobuhito Shima, Nobuo Ishimaru, Yoshikazu Konno, Motonari Takebayashi, Takaaki Noda, Norikazu Mizuno
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Publication number: 20100233887Abstract: A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified numberType: ApplicationFiled: May 27, 2010Publication date: September 16, 2010Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Hironobu Miya, Kazuyuki Toyoda, Norikazu Mizuno, Taketoshi Sato, Masanori Sakai, Masayuki Asai, Kazuyuki Okuda, Hideki Horita