Patents by Inventor Kazuyuki Toyoda

Kazuyuki Toyoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7779785
    Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
    Type: Grant
    Filed: February 15, 2006
    Date of Patent: August 24, 2010
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Hironobu Miya, Kazuyuki Toyoda, Norikazu Mizuno, Taketoshi Sato, Masanori Sakai, Masayuki Asai, Kazuyuki Okuda, Hideki Horita
  • Publication number: 20100087069
    Abstract: The coverage characteristics or loading effect of an oxide film can be improved without having to increase the supply amount or time of an oxidant. There is provided method of manufacturing a semiconductor device. The method comprises loading at least one substrate to a processing chamber; forming an oxide film on the substrate by alternately supplying a first reaction material and a second reaction material containing oxygen atoms to the processing chamber while heating the substrate; and unloading the substrate from the processing chamber, wherein the forming of the oxide film is performed by keeping the substrate at a temperature equal to or lower than a self-decomposition temperature of the first reaction material and irradiating ultraviolet light to the second reaction material.
    Type: Application
    Filed: October 1, 2009
    Publication date: April 8, 2010
    Inventors: Hironobu MIYA, Kazuyuki Toyoda, Masanori Sakai, Norikazu Mizuno, Tsutomu Kato, Yuji Takebayashi, Kenji Ono, Atsushi Morikawa, Satoshi Okada
  • Publication number: 20100015811
    Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a process chamber, a gas supply system, a gas discharge system, an RF (radio frequency) unit, an electrode, and a control device. The control device controls the gas supply system, the gas discharge system, and the RF unit. While the control device controls the RF unit to apply predetermined RF power to the electrode for generating plasma, the control device controls the gas supply system to supply a process gas to the process chamber alternately at a first flowrate and at a second flowrate greater than the first flowrate.
    Type: Application
    Filed: July 14, 2009
    Publication date: January 21, 2010
    Inventors: Taketoshi Sato, Kazuyuki Toyoda
  • Publication number: 20090280652
    Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
    Type: Application
    Filed: March 31, 2009
    Publication date: November 12, 2009
    Inventors: Hironobu Miya, Kazuyuki Toyoda, Norikazu Mizuno, Taketoshi Sato, Masanori Sakai, Masayuki Asai, Kazuyuki Okuda, Hideki Horita
  • Publication number: 20090255630
    Abstract: Disclosed is a substrate processing apparatus, including: a reaction chamber to process a substrate; a substrate placing member to stack a plurality of substrates thereon in multi-layers at a predetermined distance from one another in the reaction chamber; an introducing section to introduce processing gas into the reaction chamber; an exhaust section to exhaust an inside of the reaction chamber; and a plurality of pairs of comb electrodes, to which alternating current electric power is to be applied, to generate plasma, the plurality of pairs of comb electrodes being disposed in the reaction chamber, wherein each pair of the plurality of pairs of comb electrodes are disposed at a predetermined distance from each of plasma processing faces of the plurality of the substrates to be placed on the substrate placing member.
    Type: Application
    Filed: April 26, 2006
    Publication date: October 15, 2009
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kazuyuki Toyoda, Shinji Yashima, Yuji Takebayashi, Takeshi Itoh
  • Publication number: 20090258507
    Abstract: In order to solve the problem of contamination caused by static electricity on the surface of a substrate after plasma treatment, the invention provides a substrate treatment device comprising a standby chamber in which is arranged a transfer device for loading a substrate out of/into a cassette rack accommodating a substrate, said substrate treatment device capable of retaining said substrate transferred by the transfer device in a boat and loading, by way of a boat elevator, the boat into/out of a treatment furnace capable of applying plasma treatment to said substrate, wherein a static eliminator for eliminating static electricity of said substrate is arranged in said standby chamber.
    Type: Application
    Filed: March 2, 2007
    Publication date: October 15, 2009
    Inventors: Takeshi Itoh, Kazuyuki Toyoda, Yuji Takebayashi
  • Publication number: 20090159440
    Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied.; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
    Type: Application
    Filed: February 20, 2009
    Publication date: June 25, 2009
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kazuyuki TOYODA, Yasuhiro INOKUCHI, Motonari TAKEBAYASHI, Tadashi KONTANI, Nobuo ISHIMARU
  • Publication number: 20090133630
    Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
    Type: Application
    Filed: January 21, 2009
    Publication date: May 28, 2009
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kazuyuki TOYODA, Yasuhiro INOKUCHI, Motonari TAKEBAYASHI, Tadashi KONTANI, Nobuo ISHIMARU
  • Publication number: 20080251015
    Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
    Type: Application
    Filed: October 31, 2007
    Publication date: October 16, 2008
    Inventors: Tadashi KONTANI, Kazuyuki Toyoda, Taketoshi Sato, Toru Kagaya, Nobuhito Shima, Nobuo Ishimaru, Masanori Sakai, Kazuyuki Okuda, Yasushi Yagi, Seiji Watanabe, Yasuo Kunii
  • Publication number: 20080251014
    Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
    Type: Application
    Filed: October 31, 2007
    Publication date: October 16, 2008
    Inventors: Tadashi KONTANI, Kazuyuki Toyoda, Taketoshi Sato, Toru Kagaya, Nobuhito Shima, Nobuo Ishimaru, Masanori Sakai, Kazuyuki Okuda, Yasushi Yagi, Seiji Watanabe, Yasuo Kunii
  • Publication number: 20080153308
    Abstract: A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.
    Type: Application
    Filed: February 16, 2005
    Publication date: June 26, 2008
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Shizue Ogawa, Kazuyuki Toyoda, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
  • Publication number: 20080121180
    Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
    Type: Application
    Filed: October 31, 2007
    Publication date: May 29, 2008
    Inventors: Tadashi KONTANI, Kazuyuki TOYODA, Taketoshi SATO, Toru KAGAYA, Nobuhito SHIMA, Nobuo ISHIMARU, Masanori SAKAI, Kazuyuki OKUDA, Yasushi YAGI, Seiji WATANABE, Yasuo KUNII
  • Publication number: 20080124945
    Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
    Type: Application
    Filed: February 15, 2006
    Publication date: May 29, 2008
    Applicant: Hitachi Kokusa Electric Inc.
    Inventors: Hironobu Miya, Kazuyuki Toyoda, Norikazu Mizuno, Taketoshi Sato, Masanori Sakai, Masayuki Asai, Kazuyuki Okuda, Hideki Horita
  • Publication number: 20080093215
    Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
    Type: Application
    Filed: October 31, 2007
    Publication date: April 24, 2008
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kazuyuki TOYODA, Yasuhiro INOKUCHI, Motonari TAKEBAYASHI, Tadashi KONTANI, Nobuo ISHIMARU
  • Publication number: 20080066681
    Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
    Type: Application
    Filed: October 31, 2007
    Publication date: March 20, 2008
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
  • Publication number: 20080060580
    Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
    Type: Application
    Filed: October 31, 2007
    Publication date: March 13, 2008
    Applicant: Hitachi Kokusai Electric Inc.
    Inventors: Kazuyuki TOYODA, Yasuhiro INOKUCHI, Motonari TAKEBAYASHI, Tadashi KONTANI, Nobuo ISHIMARU
  • Publication number: 20070246355
    Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
    Type: Application
    Filed: March 20, 2007
    Publication date: October 25, 2007
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kazuyuki TOYODA, Yasuhiro INOKUCHI, Motonari TAKEBAYASHI, Tadashi KONTANI, Nobuo ISHIMARU
  • Publication number: 20060260544
    Abstract: A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member (10) which is installed surrounding a processing space (1) and grounded to the earth and a pair of electrodes (4) installed inside the conductive member (10). A primary coil of an insularing transformer (7) is connected to a high-frequency power supply unit (14) and a secondary coil is connected to the electrodes (4). A switch (13) is connected to the connection line connecting the secondary coil to the electrodes (4). By setting up/cutting off the connection of the line to the earth with use of the switch (13), the region where the plasma is generated in the processing space (1) can be changed.
    Type: Application
    Filed: March 4, 2004
    Publication date: November 23, 2006
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kazuyuki Toyoda, Nobuhito Shima, Nobuo Ishimaru, Yoshikazu Konno, Motonari Takebayashi, Takaaki Noda, Norikazu Mizuno
  • Publication number: 20060090849
    Abstract: A substrate processing apparatus comprises a substrate transfer section, a plurality of modules and a first substrate transfer robot provided in the substrate transfer section and capable of transferring substrates to the plurality of modules. The plurality of modules are piled up, separately from one another, in a vertical direction. Each of the plurality of modules are detachably mounted to the substrate transfer section and includes a substrate processing chamber, an intermediate chamber, a first gate valve disposed between the substrate processing chamber and the intermediate chamber, a second gate valve disposed between the intermediate chamber and the substrate transfer section, and a second substrate transfer robot disposed in the intermediate chamber.
    Type: Application
    Filed: December 5, 2005
    Publication date: May 4, 2006
    Inventors: Kazuyuki Toyoda, Atsuhiko Suda, Issei Makiguchi, Tsutomu Tanaka, Sadayuki Suzuki, Shinichi Nomura, Mitsunori Takeshita
  • Patent number: 7033937
    Abstract: An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to uniformly heated to a relatively high temperature. The apparatus comprises a reaction chamber wherein one or more substrates to be treated are disposed, a plasma source arranged outside of and in proximity to the reaction chamber, an active species supply port for providing active species generated by the plasma source to the reaction chamber and arranged at a side of the reaction chamber and an exhaust port provided at the opposite side to the active species supply port. The active species flows parallel to the surfaces of the substrates.
    Type: Grant
    Filed: January 14, 2003
    Date of Patent: April 25, 2006
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Kazuyuki Toyoda, Osamu Kasahara, Tsutomu Tanaka, Mamoru Sueyoshi, Nobuhito Shima, Masanori Sakai