Abstract: Provided are a transistor with low contact resistivity and a manufacturing method therefor. The transistor includes a substrate, a buffer layer, a channel layer and a barrier layer sequentially stacked, an ion implantation region is formed in a source region and a drain region of the barrier layer, and grooves arranged at intervals are formed in the ion implantation region. Ohmic metal is deposited on a surface of the ion implantation region and in each groove, and the ohmic metal is in contact with a bottom and a side wall of each groove. In this solution, the ohmic metal can be not only in contact with the surface of the ion implantation region, but also in contact with the side wall of each of the grooves, thereby increasing a contact area between the ohmic metal and the semiconductor, and thus reducing the ohmic contact resistivity.

Abstract: A backside metallized compound semiconductor device includes a compound semiconductor wafer and a metal layered structure. The compound semiconductor wafer includes a substrate having opposite front and back surfaces, and a ground pad structure formed on the front surface. The substrate is formed with a via extending from the back surface to the front surface to expose a side wall of the substrate and a portion of the ground pad structure. The metal layered structure is disposed on the back surface, and covers the side wall and the portion of the ground pad structure. The metal layered structure includes an adhesion layer, a seed layer, a gold layer, and an electroplated copper layer that are formed on the back surface in such order. The method for manufacturing the backside metallized compound semiconductor device is also disclosed.

Abstract: A backside metallized compound semiconductor device includes a compound semiconductor wafer and a metal layered structure. The compound semiconductor wafer includes a substrate having opposite front and back surfaces, and a ground pad structure formed on the front surface. The substrate is formed with a via extending from the back surface to the front surface to expose a side wall of the substrate and a portion of the ground pad structure. The metal layered structure is disposed on the back surface, and covers the side wall and the portion of the ground pad structure. The metal layered structure includes an adhesion layer, a seed layer, a gold layer, and an electroplated copper layer that are formed on the back surface in such order. The method for manufacturing the backside metallized compound semiconductor device is also disclosed.

Abstract: A semiconductor device includes a substrate and a semiconductor structure that is located on the substrate and that includes a device portion including a semiconductor element, and a seal ring portion. The semiconductor element includes a first electrode and a second electrode. The seal ring portion surrounds the device portion and includes a conducting element. The conducting element includes an enhanced-High-Electron-Mobility-Transistor (eHEMT) that includes a first gate electrode electrically connected to the first electrode, a first source electrode electrically connected to the second electrode, and a first drain electrode electrically connect to the first electrode. A method for making the semiconductor device and a seal ring structure are also provided.

Abstract: A method of making a transfer head for transferring micro elements, wherein the transfer head includes a cavity with a plurality of vacuum paths and a suite having arrayed suction nozzles and vacuum paths. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles attract or release the micro element through vacuum pressure transmitted by vacuum. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can attract or release required micro element through vacuum pressure; and fabricating a suite with an array micro-hole structure, wherein the array micro-hole structure serves as the vacuum path components and the suction nozzles.

Abstract: A backside metallized compound semiconductor device includes a compound semiconductor wafer and a metal layered structure. The compound semiconductor wafer includes a substrate having opposite front and back surfaces, and a ground pad structure formed on the front surface. The substrate is formed with a via extending from the back surface to the front surface to expose a side wall of the substrate and a portion of the ground pad structure. The metal layered structure is disposed on the back surface, and covers the side wall and the portion of the ground pad structure. The metal layered structure includes an adhesion layer, a seed layer, an aurum layer, and an electroplating copper layer that are formed on the back surface in such order. The method for manufacturing the backside metallized compound semiconductor device is also disclosed.

Abstract: A method of making a transfer head for transferring micro elements, wherein the transfer head includes a cavity with a plurality of vacuum paths and a suite having arrayed suction nozzles and vacuum paths. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles attract or release the micro element through vacuum pressure transmitted by vacuum. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can attract or release required micro element through vacuum pressure; and fabricating a suite with an array micro-hole structure, wherein the array micro-hole structure serves as the vacuum path components and the suction nozzles.

Abstract: A transfer head for transferring micro elements includes a cavity with a plurality of vacuum paths; a suite having a plurality of suction nozzles and vacuum path components. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles absorb or release the micro elements through vacuum pressure, which is transmitted by vacuum path components and vacuum paths of each path. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can absorb or release required micro element through vacuum pressure.

Abstract: A fabrication method for a light emitting diode (LED), including: 1) mounting a LED chip on a substrate; 2) mounting a screen printing template on the LED chip; 3) coating a silicone gel layer over the surface of the screen printing template; 4) printing the phosphor: printing the phosphor over the chip surface via silk screen printing process and recycling the excess phosphor; and 5) removing the screen printing template and baking the phosphor for curing, and coating the cured phosphor over the chip surface. In the packaging method of the present disclosure, the unused phosphor can be recycled because it is not polluted by the screen printing template material.

Abstract: A transfer head for transferring micro element includes a cavity; a plurality of vacuum paths connected with the cavity respectively with valves configured at the connection between the cavity and the vacuum paths and used for opening/closing; a plurality of suction nozzles connected with the vacuum paths, wherein the suction nozzles hold or release the micro element via vacuum pressure; vacuum pressure is transmitted by each vacuum path; a switching component for controlling valve to open/close each vacuum path, so as to control the suction nozzles to hold or release required micro element via vacuum pressure. Further, the switching component includes a CMOS memory circuit and an address electrode array connected to the CMOS memory circuit to realize micro-switch array. The transfer head can selectively transfer a plurality of micro elements at one time.

Abstract: An electrode material includes a fine-array porous material. The fine-array porous material includes a plurality of pores having a substantially uniform size of <1000 ?m, with a variation of <20%, and comprises a metal such as Ni, Al, Ti, Sn and Mn. The metal fine-array porous electrode material can be surface-treated to form a metal oxide on the surface of the porous electrode material, or be coated with a metal oxide including RuO2, TaO. An electrical energy storage apparatus, such as a supercapacitor or a lithium battery, containing the fine-array porous electrode material can have significantly improved performances as compared with conventional materials.

Abstract: A super-fine bubble generation apparatus includes a fine-array porous membrane and a device for generating substantially uniform, super-fine gas bubbles in a liquid. The fine-array porous membrane includes a plurality of pores having a substantially uniform size of <100 ?m, with a variation of <20%. The super-fine gas bubbles generated by this apparatus can have a size of 50 nm-50000 nm, with a substantially uniform distribution with variations <20%. Applications of such super-fine bubble generation apparatus can include a skin cleansing device, or a teeth-cleaning device.

Abstract: An apparatus including a fine-array porous material with a specific surface area higher than 10/mm, the specific surface area depending on different pore sizes, wherein the porous material comprises a plurality of pores having a substantially uniform size with a variation of less than about 20%, wherein the size is larger than about 100 nm and smaller than about 10 cm. The high-buoyancy apparatus can be part of a water vehicle such as a boat or a submarine, and the fine-array porous material is configured to reduce friction and/or control buoyancy. A conduit is also provided employing a fine-array porous material to reduce friction and/or control buoyancy. A garment is provided taking advantage of water repellant and/or UV/IR reflection properties of the fine-array porous material.

Abstract: A film for semiconductor device includes a base material and an adhesive layer formed over the base material. The film is divided into an adhesive area and an expansion area. The elasticity modulus of the expansion area is less than that of the adhesive area. When tensile strength is applied on the film, the expansion area is more prone to tensile deformation than the adhesive area. When this film is used for film expansion of semiconductor devices, the devices can be evenly and orderly arranged on the film.

Abstract: A film for semiconductor device includes a base material and an adhesive layer formed over the base material. The film is divided into an adhesive area and an expansion area. The elasticity modulus of the expansion area is less than that of the adhesive area. When tensile strength is applied on the film, the expansion area is more prone to tensile deformation than the adhesive area. When this film is used for film expansion of semiconductor devices, the devices can be evenly and orderly arranged on the film.

Abstract: A transfer head for transferring micro element includes a cavity; a plurality of vacuum paths connected with the cavity respectively with valves configured at the connection between the cavity and the vacuum paths and used for opening/closing; a plurality of suction nozzles connected with the vacuum paths, wherein the suction nozzles hold or release the micro element via vacuum pressure; vacuum pressure is transmitted by each vacuum path; a switching component for controlling valve to open/close each vacuum path, so as to control the suction nozzles to hold or release required micro element via vacuum pressure. Further, the switching component includes a CMOS memory circuit and an address electrode array connected to the CMOS memory circuit to realize micro-switch array. The transfer head can selectively transfer a plurality of micro elements at one time.

Abstract: A transfer head for transferring micro elements includes a cavity with a plurality of vacuum paths; a suite having a plurality of suction nozzles and vacuum path components. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles absorb or release the micro elements through vacuum pressure, which is transmitted by vacuum path components and vacuum paths of each path. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can absorb or release required micro element through vacuum pressure.

Abstract: A super-fine bubble generation apparatus includes a fine-array porous membrane and a device for generating substantially uniform, super-fine gas bubbles in a liquid. The fine-array porous membrane includes a plurality of pores having a substantially uniform size of <100 ?m, with a variation of <20%. The super-fine gas bubbles generated by this apparatus can have a size of 50 nm-50000 nm, with a substantially uniform distribution with variations <20%. Applications of such super-fine bubble generation apparatus can include a skin cleansing device, or a teeth-cleaning device.

Abstract: A photocatalyst apparatus includes a carrier and a photocatalyst carried by the carrier. The carrier is a porous material with a specific surface area higher than 10/mm, the specific surface area depending on different pore sizes, wherein the porous material includes a plurality of pores having a substantially uniform size with a variation of less than about 20%, wherein the size is larger than about 100 nm and smaller than about 5 mm. The photocatalyst apparatus can be used for lighting, anti bacteria, deodorant, air or water purification, etc.

Abstract: An electrode material includes a fine-array porous material. The fine-array porous material includes a plurality of pores having a substantially uniform size of <1000 ?m, with a variation of <20%, and comprises a metal such as Ni, Al, Ti, Sn and Mn. The metal fine-array porous electrode material can be surface-treated to form a metal oxide on the surface of the porous electrode material, or be coated with a metal oxide including RuO2, TaO. An electrical energy storage apparatus, such as a supercapacitor or a lithium battery, containing the fine-array porous electrode material can have significantly improved performances as compared with conventional materials.