Abstract: A photocatalyst apparatus includes a carrier and a photocatalyst carried by the carrier. The carrier is a porous material with a specific surface area higher than 10/mm, the specific surface area depending on different pore sizes, wherein the porous material includes a plurality of pores having a substantially uniform size with a variation of less than about 20%, wherein the size is larger than about 100 nm and smaller than about 5 mm. The photocatalyst apparatus can be used for lighting, anti bacteria, deodorant, air or water purification, etc.

Abstract: An electrode material includes a fine-array porous material. The fine-array porous material includes a plurality of pores having a substantially uniform size of <1000 ?m, with a variation of <20%, and comprises a metal such as Ni, Al, Ti, Sn and Mn. The metal fine-array porous electrode material can be surface-treated to form a metal oxide on the surface of the porous electrode material, or be coated with a metal oxide including RuO2, TaO. An electrical energy storage apparatus, such as a supercapacitor or a lithium battery, containing the fine-array porous electrode material can have significantly improved performances as compared with conventional materials.

Abstract: A super-fine bubble generation apparatus includes a fine-array porous membrane and a device for generating substantially uniform, super-fine gas bubbles in a liquid. The fine-array porous membrane includes a plurality of pores having a substantially uniform size of <100 ?m, with a variation of <20%. The super-fine gas bubbles generated by this apparatus can have a size of 50 nm-50000 nm, with a substantially uniform distribution with variations <20%. Applications of such super-fine bubble generation apparatus can include a skin cleansing device, or a teeth-cleaning device.

Abstract: An apparatus including a fine-array porous material with a specific surface area higher than 10/mm, the specific surface area depending on different pore sizes, wherein the porous material comprises a plurality of pores having a substantially uniform size with a variation of less than about 20%, wherein the size is larger than about 100 nm and smaller than about 10 cm. The high-buoyancy apparatus can be part of a water vehicle such as a boat or a submarine, and the fine-array porous material is configured to reduce friction and/or control buoyancy. A conduit is also provided employing a fine-array porous material to reduce friction and/or control buoyancy. A garment is provided taking advantage of water repellant and/or UV/IR reflection properties of the fine-array porous material.

Abstract: A porous material with a specific surface area higher than 10/mm, and methods and system for manufacturing such a porous material. The porous material includes a plurality of pores having a substantially uniform size with a variation of less than about 20%, wherein the size is larger than about 100 nm and smaller than about 5 mm. A system including the porous material can be configured as one of a desalination system, a super-fine bubble generation system, a capacitor system, or a battery system.

Abstract: An epitaxial structure of light emitting diode with a current modulation layer, and more specifically, a high-resistivity material is injected to change the current conduction path, and implementation of the main structure is to grow a high-resistivity material (e.g., InxAlyGa1-x-yN) over the N-type conductive layer or the P-type conductive layer till part of current conduction path is exposed through high-temperature H2 in-situ etching in the reacting furnace and to grow the N-type or the P-type conductive layer for coverage. This design for forming a current modulation layer without second epitaxial growth provides the injected current with a better spreading path in the N-type conductive layer and the P-type conductive layer, which more effectively and uniformly injects the current to the active layer and improves luminous efficiency.

Abstract: An epitaxial structure of light emitting diode with a current modulation layer, and more specifically, a high-resistivity material is injected to change the current conduction path, and implementation of the main structure is to grow a high-resistivity material (e.g., InxAlyGa1-x-yN) over the N-type conductive layer or the P-type conductive layer till part of current conduction path is exposed through high-temperature H2 in-situ etching in the reacting furnace and to grow the N-type or the P-type conductive layer for coverage. This design for forming a current modulation layer without second epitaxial growth provides the injected current with a better spreading path in the N-type conductive layer and the P-type conductive layer, which more effectively and uniformly injects the current to the active layer and improves luminous efficiency.

Abstract: A fabrication method for a light emitting diode (LED), including: 1) mounting a LED chip on a substrate; 2) mounting a screen printing template on the LED chip; 3) coating a silicone gel layer over the surface of the screen printing template; 4) printing the phosphor: printing the phosphor over the chip surface via silk screen printing process and recycling the excess phosphor; and 5) removing the screen printing template and baking the phosphor for curing, and coating the cured phosphor over the chip surface. In the packaging method of the present disclosure, the unused phosphor can be recycled because it is not polluted by the screen printing template material.

Abstract: An n-type layer, an active layer, and a p-type layer are grown on a growth substrate. Portions of the p-type layer and active layer are etched away to expose the n-type layer, and an n-electrode is formed over the exposed portions of the n-type layer. A first dielectric layer is formed over the n-electrodes. A transparent conductor layer is formed over the p-type layer and the first dielectric layer. A p-electrode is formed over the transparent conductor layer. A transparent bonding layer is deposited over the transparent conductor layer and the p-electrode. A transparent support substrate is bonded to the p-type layer via the bonding layer. The growth substrate is then removed to expose the n-type layer, and the layers are etched to expose the n and p electrodes for connection to a power source. A reflector layer is formed on the bottom surface of the substrate.

Abstract: A nitride light-emitting diode is provided including a current spreading layer. The current spreading layer includes a first layer having a plurality of distributed insulating portions configured to have electrical current flow therebetween; and a second layer including interlaced at least one substantially undoped nitride semiconductor layer and at least one n-type nitride semiconductor layer configured to spread laterally the electrical current from the first layer.

Abstract: A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.

Abstract: A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.

Abstract: An n-type layer, an active layer, and a p-type layer are grown on a growth substrate. Portions of the p-type layer and active layer are etched away to expose the n-type layer, and an n-electrode is formed over the exposed portions of the n-type layer. A first dielectric layer is formed over the n-electrodes. A transparent conductor layer is formed over the p-type layer and the first dielectric layer. A p-electrode is formed over the transparent conductor layer. A transparent bonding layer is deposited over the transparent conductor layer and the p-electrode. A transparent support substrate is bonded to the p-type layer via the bonding layer. The growth substrate is then removed to expose the n-type layer, and the layers are etched to expose the n and p electrodes for connection to a power source. A reflector layer is formed on the bottom surface of the substrate.

Abstract: A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED toward a peripheral region of the LED.

Abstract: A reflector for a GaN-based light-emitting device, method for manufacturing the reflector and GaN-based light-emitting device including the reflector are provided. The reflector is formed on a p-type GaN-based epitaxial layer and includes: a whisker crystal of un-doped GaN, formed on a surface of the p-type GaN-based epitaxial layer with a predefined density distribution and at a position that corresponds to a dislocation defect of an epitaxial layer; and a metal reflective layer, formed on both the p-type GaN-based epitaxial layer and the whisker crystal. The whisker of un-doped GaN is positioned on the dislocation defect of the p-type GaN-based epitaxial layer, so that the Ag reflective layer can be separated from the dislocation defect of the p-type GaN-based epitaxial layer, thereby effectively preventing Ag from moving inside the dislocation defect via electromigration, and largely decreasing the possibility of current leakage of the light-emitting device including the Ag reflector.

Abstract: The invention discloses an AlGaInP-based LED with double reflective layers and a fabrication method thereof. The method includes: providing a temporary substrate; forming an epitaxial layer on a front of the temporary substrate; forming a distributed Bragg reflector on the epitaxial layer; forming an some openings in the distributed Bragg reflector, such that the arrangement of the distributed Bragg reflector is grid-like and a portion of a top of the epitaxial layer is exposed; forming a reflective metal layer on the distributed Bragg reflector and on the exposed portion of the top of the epitaxial layer, to fill the openings; bonding a permanent substrate onto the reflective metal layer; removing the temporary substrate; forming a first electrode and a second electrode at a bottom of the epitaxial layer and a top of the permanent substrate, respectively; and dicing to obtain the AlGaInP-based LED chips.

Abstract: A nitride light-emitting diode is provided including a current spreading layer.

Abstract: A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED toward a peripheral region of the LED.

Abstract: The present invention discloses a method for lift-off of an LED substrate. By eroding the sidewall of a GaN epitaxial layer, cavity structures are formed, which may act in cooperation with a non-fully filled patterned sapphire substrate from epitaxial growth to cause the GaN epitaxial layer to separate from the sapphire substrate. The method according to an embodiment of the present invention can effectively reduce the dislocation density in the growth of a GaN-based epitaxial layer; improve lattice quality, and realize rapid lift-off of an LED substrate, and has the advantages including low cost, no internal damage to the GaN film, elevated performance of the photoelectric device and improved luminous efficiency.

Abstract: A reflector for a GaN-based light-emitting device, method for manufacturing the reflector and GaN-haled light-emitting device including the reflector are provided. The reflector is formed on a p-type GaN-based epitaxial layer and includes: a whisker crystal of un-doped GaN, formed on a surface of the p-type GaN-based epitaxial layer with a predefined density distribution and at a position that corresponds to a dislocation defect of an epitaxial layer; and a metal reflective layer, formed on both the p-type GaN-based epitaxial layer and the whisker crystal. The whisker of un-doped GaN is positioned on the dislocation defect of the p-type GaN-based epitaxial layer, so that the Ag reflective layer can be separated from the dislocation defect of the p-type GaN-based epitaxial layer, thereby effectively preventing Ag from moving inside the dislocation defect via electromigration, and largely decreasing the possibility of current leakage of the light-emitting device including the Ag reflector.