Abstract: A capacitor and a method for manufacturing the same provide a branched capacitor with a large capacitance and a super-slim structure. The method includes sintering a ceramic substrate; forming a plurality of troughs in the sintered ceramic substrate, the plurality of troughs including first and second sets of troughs corresponding to opposing electrodes; and filling the troughs with metal to form a plurality of metal lines arranged alternately in the plurality of troughs.

Abstract: There is provided a semiconductor device. The semiconductor device includes a lower electrode, a contact connected to the lower electrode to have a double trench structure, a phase change material layer accommodated in the double trench to cause a phase change between a crystalline state and an amorphous state in accordance with a change in heat transmitted by the contact, and an upper electrode connected to the phase change material layer.

Abstract: Provided is a method for forming a trench, capable of rounding a top corner without adding a separate mask or process. In the method, first and second insulating layers are stacked on a substrate having an isolation region and an active region. Subsequently, a photoresist pattern is formed on the second insulating layer, and the first and second insulating layers are patterned using the photoresist pattern as a mask to expose a portion of a substrate in the isolation region. After that, the substrate is etched using the first and second pad insulating layers as a mask to form an STI region such that an upper width of the STI region is greater than a lower width of the STI region.