Patents by Inventor Keeyoung Park

Keeyoung Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230048767
    Abstract: This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate.
    Type: Application
    Filed: October 19, 2022
    Publication date: February 16, 2023
    Inventors: William A. Wojtczak, Kazutaka Takahashi, Atsushi Mizutani, Thomas Dory, Keeyoung Park
  • Publication number: 20220393104
    Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.
    Type: Application
    Filed: August 16, 2022
    Publication date: December 8, 2022
    Inventors: Keeyoung PARK, Atsushi MIZUTANI
  • Patent number: 11508569
    Abstract: This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate. The methods can include a) supplying a sublimating material to a substrate having a pattern disposed on a surface thereof; b) maintaining the sublimating material on the surface for a time sufficient to modify the surface; c) solidifying the sublimating material on the surface; and d) removing by sublimation the sublimating material disposed on the surface.
    Type: Grant
    Filed: August 3, 2020
    Date of Patent: November 22, 2022
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: William A. Wojtczak, Kazutaka Takahashi, Atsushi Mizutani, Thomas Dory, Keeyoung Park
  • Patent number: 11456412
    Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.
    Type: Grant
    Filed: June 2, 2020
    Date of Patent: September 27, 2022
    Assignee: FUJIFILM CORPORATION
    Inventors: Keeyoung Park, Atsushi Mizutani
  • Patent number: 11447642
    Abstract: This disclosure relates to methods and compositions for treating a wafer having a pattern disposed on a surface of the wafer.
    Type: Grant
    Filed: January 7, 2021
    Date of Patent: September 20, 2022
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: William A. Wojtczak, Atsushi Mizutani, Keeyoung Park
  • Patent number: 11174394
    Abstract: This disclosure relates to methods and compositions for treating a wafer having a pattern disposed on a surface of the wafer.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: November 16, 2021
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: William A. Wojtczak, Atsushi Mizutani, Keeyoung Park
  • Publication number: 20210122925
    Abstract: This disclosure relates to methods and compositions for treating a wafer having a pattern disposed on a surface of the wafer.
    Type: Application
    Filed: January 7, 2021
    Publication date: April 29, 2021
    Inventors: William A. Wojtczak, Atsushi Mizutani, Keeyoung Park
  • Publication number: 20210057210
    Abstract: This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate.
    Type: Application
    Filed: August 3, 2020
    Publication date: February 25, 2021
    Inventors: William A. Wojtczak, Kazutaka Takahashi, Atsushi Mizutani, Thomas Dory, Keeyoung Park
  • Publication number: 20200295258
    Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.
    Type: Application
    Filed: June 2, 2020
    Publication date: September 17, 2020
    Inventors: Keeyoung PARK, Atsushi MIZUTANI
  • Patent number: 10714682
    Abstract: An object is to provide a ruthenium removal composition capable of dissolving Ru while suppressing dissolution of CoFeB, and a method of producing a magnetoresistive random access memory (MRAM) using the same. A ruthenium removal composition of the present invention contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to the total mass of the composition.
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: July 14, 2020
    Assignee: FUJIFILM CORPORATION
    Inventors: Keeyoung Park, Atsushi Mizutani
  • Patent number: 10619126
    Abstract: The present disclosure is directed to non-corrosive cleaning compositions that are useful primarily for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: April 14, 2020
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Yasuo Sugishima, Keeyoung Park, Thomas Dory
  • Patent number: 10593538
    Abstract: The disclosure provides methods and compositions therefor for treating a surface wherein a surface treatment layer is formed on the surface, thereby minimizing or preventing pattern collapse as the surface is subjected to typical cleaning steps in the semiconductor manufacturing process.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: March 17, 2020
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: William A. Wojtczak, Keeyoung Park, Atsushi Mizutani
  • Publication number: 20200035494
    Abstract: This disclosure relates to methods and compositions for treating a wafer having a pattern disposed on a surface of the wafer.
    Type: Application
    Filed: July 25, 2019
    Publication date: January 30, 2020
    Inventors: William A. Wojtczak, Kazutaka Takahashi, Atsushi Mizutani, Keeyoung Park
  • Patent number: 10533146
    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one metal-containing additive; and 4) water.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: January 14, 2020
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Keeyoung Park, Emil A. Kneer, Thomas Dory, Tomonori Takahashi
  • Publication number: 20190211210
    Abstract: This disclosure relates to methods and compositions for treating a wafer having a pattern disposed on a surface of the wafer.
    Type: Application
    Filed: December 18, 2018
    Publication date: July 11, 2019
    Inventors: William A. Wojtczak, Atsushi Mizutani, Keeyoung Park
  • Publication number: 20190148634
    Abstract: An object is to provide a ruthenium removal composition capable of dissolving Ru while suppressing dissolution of CoFeB, and a method of producing a magnetoresistive random access memory (MRAM) using the same. A ruthenium removal composition of the present invention contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to the total mass of the composition.
    Type: Application
    Filed: January 11, 2019
    Publication date: May 16, 2019
    Inventors: Keeyoung PARK, Atsushi MIZUTANI
  • Publication number: 20180277357
    Abstract: The disclosure provides methods and compositions therefor for treating a surface wherein a surface treatment layer is formed on the surface, thereby minimizing or preventing pattern collapse as the surface is subjected to typical cleaning steps in the semiconductor manufacturing process.
    Type: Application
    Filed: March 22, 2018
    Publication date: September 27, 2018
    Inventors: William A. Wojtczak, Keeyoung Park, Atsushi Mizutani
  • Patent number: 10049883
    Abstract: An object is to provide an MRAM dry etching residue removal composition capable of removing dry etching residues while suppressing damage to a substrate containing a specific metal in a step of producing an MRAM, a method of producing a magnetoresistive random access memory using the same, and a cobalt removal composition having excellent cobalt removability. The MRAM dry etching residue removal composition of the present invention contains a strong oxidizing agent and water. In addition, the cobalt removal composition of the present invention contains orthoperiodic acid and water.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: August 14, 2018
    Assignee: FUJIFILM CORPORATION
    Inventors: Keeyoung Park, Atsushi Mizutani
  • Publication number: 20180201884
    Abstract: The present disclosure is directed to non-corrosive cleaning compositions that are useful primarily for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.
    Type: Application
    Filed: July 14, 2016
    Publication date: July 19, 2018
    Inventors: Yasuo Sugishima, Keeyoung Park, Thomas Dory
  • Publication number: 20180100128
    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one metal-containing additive; and 4) water.
    Type: Application
    Filed: October 5, 2017
    Publication date: April 12, 2018
    Inventors: Keeyoung Park, Emil A. Kneer, Thomas Dory, Tomonori Takahashi