Abstract: Test structures and methods for measuring contact and via parasitic capacitance in an integrated circuit are provided. The accuracy of contact and via capacitance measurements are improved by eliminating not-to-be-measured capacitance from the measurement results. The capacitance is measured on a target test structure that has to-be-measured contact or via capacitance. Measurements are then repeated on a substantially similar reference test structure that is free of to-be-measured contact or via capacitances. By using the capacitance measurements of the two test structures, the to-be-measured contact and via capacitance can be calculated.

Abstract: Test structures and methods for measuring contact and via parasitic capacitance in an integrated circuit are provided. The accuracy of contact and via capacitance measurements are improved by eliminating not-to-be-measured capacitance from the measurement results. The capacitance is measured on a target test structure that has to-be-measured contact or via capacitance. Measurements are then repeated on a substantially similar reference test structure that is free of to-be-measured contact or via capacitances. By using the capacitance measurements of the two test structures, the to-be-measured contact and via capacitance can be calculated.

Abstract: Shield structures are provided. A first and second shield lines are formed over a substrate and coupled with a first voltage. A conductive line is formed between the first and the second shield lines, and coupled with a second voltage. The first shield layer is formed over the substrate and coupled to the first and the second shield lines via at least one first conductive structure.

Abstract: A novel parasitic extraction system includes an interconnect primitive library that has a parameterized inductance function for at least one conducting layer of the integrated circuit. A parasitic extractor analyzes structures within a selected distance of a selected conductor within the integrated circuit and determines parasitic inductance values for the selected conductor using the parameterized inductance function of the interconnect primitive library. Using this parasitic extraction system, parasitic impedances, including inductance, may be extracted for an integrated circuit layout, thus allowing more accurate modeling and timing analysis of the integrated circuit layout to be obtained.

Abstract: A novel parasitic extraction system includes an interconnect primitive library that has a parameterized inductance function for at least one conducting layer of the integrated circuit. A parasitic extractor analyzes structures within a selected distance of a selected conductor within the integrated circuit and determines parasitic inductance values for the selected conductor using the parameterized inductance function of the interconnect primitive library. Using this parasitic extraction system, parasitic impedances, including inductance, may be extracted for an integrated circuit layout, thus allowing more accurate modeling and timing analysis of the integrated circuit layout to be obtained.

Abstract: A method measures a resistance in a test structure to determine the sheet resistivity of a test structure. In one embodiment, a family of test structures is provided to determine the effective sheet resistivity of a conductor as a function of its width. The method is applicable to conductors in manufacturing processes in which “slots” or “islands” are created in the conductor to prevent dishing during chemical-mechanical polishing.

Abstract: A novel parasitic extraction system includes an interconnect primitive library that has a parameterized inductance function for at least one conducting layer of the integrated circuit. A parasitic extractor analyzes structures within a selected distance of a selected conductor within the integrated circuit and determines parasitic inductance values for the selected conductor using the parameterized inductance function of the interconnect primitive library. Using this parasitic extraction system, parasitic impedances, including inductance, may be extracted for an integrated circuit layout, thus allowing more accurate modeling and timing analysis of the integrated circuit layout to be obtained.

Abstract: A method provides estimations of physical interconnect process parameter values in a process for manufacturing integrated circuits. The method includes fabricating test structures each providing a value of a measurable quantity corresponding to a value within a range of values of the physical interconnect process parameters. In some embodiments, the measured value is used to derive the values of the physical interconnect process parameters, either by a numerical method using a field solver, or by a closed-form solution. The values of physical interconnect process parameters involving physical dimensions are also obtained by measuring photomicrographs obtained using a scanning electron microscope from cross sections of test structures. In some embodiments, a family of test structures corresponding to a range of conductor widths and a range of spacings between conductors are measured.

Abstract: A method models conductive regions of a semiconductor substrate in conjunction with conductors in the interconnect structures above the semiconductor substrate. Such a method allows highly accurate extraction of capacitance in planar (e.g., shallow trench isolation) and non-planar (e.g., thermal oxide isolation) semiconductor structures. This method is particularly applicable to modeling dummy diffusion regions prevalent in shallow trench isolation structures. An area-perimeter approach simplifies calculation of capacitance without using a 3-dimensional electric field solver. A method is also provided for extracting a capacitance associate with a contact, or a connecting conductor between two conductor layers.

Abstract: A method provides estimations of physical interconnect process parameter values in a process for manufacturing integrated circuits. The method includes fabricating test structures each providing a value of a measurable quantity corresponding to a value within a range of values of the physical interconnect process parameters. In some embodiments, the measured value is used to derive the values of the physical interconnect process parameters, either by a numerical method using a field solver, or by a closed-form solution. The values of physical interconnect process parameters involving physical dimensions are also obtained by measuring photomicrographs obtained using a scanning electron microscope from cross sections of test structures. In some embodiments, a family of test structures corresponding to a range of conductor widths and a range of spacings between conductors are measured.

Abstract: A method provides estimations of physical interconnect process parameter values in a process for manufacturing integrated circuits. The method includes fabricating test structures each providing a value of a measurable quantity corresponding to a value within a range of values of the physical interconnect process parameters. In some embodiments, the measured value is used to derive the values of the physical interconnect process parameters, either by a numerical method using a field solver, or by a closed-form solution. The values of physical interconnect process parameters involving physical dimensions are also obtained by measuring photomicrographs obtained using a scanning electron microscope from cross sections of test structures. In some embodiments, a family of test structures corresponding to a range of conductor widths and a range of spacings between conductors are measured.

Abstract: A comprehensive system and method allow an integrated circuit designer to extract accurate estimates of parasitic impedances in interconnection lines of an integrated circuit. The method includes collecting values of electrical characteristic parameters to provide a technology profile for a particular fabrication process. An Interconnect Primitive Library builder provides a collection of interconnect `primitives` that any interconnect structure fabricated under the fabrication process can be broken down into, and combines it with the technology profile for simulations in a 3-dimensional field solver to extract parameterized coupling capacitances and other characteristic impedances for each interconnect primitive. An extraction tool traces a signal path of an integrated circuit and decomposes the interconnect structures on the signal path into interconnect primitives and maps them to the Interconnect Primitive Library.

Abstract: Data processing methods and computer display systems for computer aided design and electrical performance prediction of multilevel on-chip and off-chip interconnects. The invention specifically relates to parameterized graphical display and computation tools for calculation and display of capacitance and other electrical characteristics of multilevel VLSI, PCB, and MCM interconnects. Four subsystems are integrated: (a) a batch-mode computation module that combines a 2-D/3-D finite difference numerical simulation and a fast interpolation algorithm; (b) an interactive design mode with performance browsing, goal-directed synthesis, and on-line performance evaluation; (c) an interactive SPICE subcircuit generator and simulator; and (d) a spreadsheet-style graphical user interface.