Abstract: A method for producing an epitaxial wafer includes a step of growing an epitaxial layer structure on a III-V semiconductor substrate, the epitaxial layer structure including a III-V semiconductor multiple-quantum well and a III-V semiconductor surface layer, wherein the step of growing the epitaxial layer structure on the substrate is performed such that a lattice mismatch ?? of the multiple-quantum well with respect to the substrate satisfies a range of ?0.13%???<0% or 0%<???+0.13%, the range having a center displaced from zero, and an X-ray rocking curve in a zero-order diffraction peak derived from the multiple-quantum well has a full width at half maximum (FWHM) of 30 seconds or less.

Abstract: An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer 23 grown on the absorption layer 23 contains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer 21. In the group III-V compound semiconductor photo detector 11, the InP layer 23 contains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layer 23 generate holes, the silicon contained in the InP layer 23 compensates for the generated carriers. As a result, the second portion 23d of the InP layer 23 has sufficient n-type conductivity.

Abstract: Provided are an epitaxial wafer, a photodiode, and the like that include an antimony-containing layer and can be efficiently produced such that protruding surface defects causing a decrease in the yield can be reduced and impurity contamination causing degradation of the performance can be suppressed. The production method includes a step of growing an antimony (Sb)-containing layer on a substrate 1 by metal-organic vapor phase epitaxy using only metal-organic sources; and a step of growing, on the antimony-containing layer, an antimony-free layer including a window layer 5, wherein, from the growth of the antimony-containing layer to completion of the growth of the window layer, the growth is performed at a growth temperature of 425° C. or more and 525° C. or less.

Abstract: A semiconductor device includes a semiconductor layer laminate in which a plurality of semiconductor layers are laminated, the semiconductor layer laminate including a light receiving layer, the light receiving layer being grown by a metal-organic vapor phase epitaxy method, the light receiving layer having a cutoff wavelength of more than or equal to 3 ?m and less than or equal to 8 ?m, the semiconductor device having a dark current density of less than or equal to 1×10?1 A/cm2 when a reverse bias voltage of 60 mV is applied at a temperature of ?140° C. Thereby, a semiconductor device which can receive light in a mid-infrared range and has a low dark current is provided.

Abstract: Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z??0.4x+24.6 is satisfied.

Abstract: A method for producing a semiconductor element includes a step of forming a multiple quantum well in which a GaSb layer and an InAs layer are alternately stacked on a GaSb substrate by MOVPE, wherein, in the step of forming a multiple quantum well, an InSb film is formed on at least one of a lower-surface side and an upper-surface side of the InAs layer so as to be in contact with the InAs layer.

Abstract: Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z??0.4x+24.6 is satisfied.

Abstract: A semiconductor device includes a semiconductor layer laminate in which a plurality of semiconductor layers are laminated, the semiconductor layer laminate including a light receiving layer, the light receiving layer being grown by a metal-organic vapor phase epitaxy method, the light receiving layer having a cutoff wavelength of more than or equal to 3 ?m and less than or equal to 8 ?m, the semiconductor device having a dark current density of less than or equal to 1×10?1 A/cm2 when a reverse bias voltage of 60 mV is applied at a temperature of ?140° C. Thereby, a semiconductor device which can receive light in a mid-infrared range and has a low dark current is provided.

Abstract: An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer 23 grown on the absorption layer 23 contains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer 21. In the group III-V compound semiconductor photo detector 11, the InP layer 23 contains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layer 23 generate holes, the silicon contained in the InP layer 23 compensates for the generated carriers. As a result, the second portion 23d of the InP layer 23 has sufficient n-type conductivity.

Abstract: The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array 55 includes an n-type buffer layer 2 disposed on an InP substrate 1, an absorption layer 3 having a type-II MQW, a contact layer 5 disposed on the absorption layer, and a p-type region extending to the n-type buffer layer 2 through the absorption layer 3, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junction 15 is formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.

Abstract: Provided are an epitaxial wafer and a light-emitting element having a type-II MQW formed of III-V compound semiconductors and configured to emit light with a sufficiently high intensity. The method includes a step of growing an active layer having a type-II multi-quantum well structure (MQW) on a III-V compound semiconductor substrate, wherein, in the step of forming the type-II multi-quantum well structure, the type-II multi-quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources such that a number of pairs of the type-II multi-quantum well structure is 25 or more.

Abstract: A method for producing a semiconductor element includes a step of forming a multiple quantum well in which a GaSb layer and an InAs layer are alternately stacked on a GaSb substrate by MOVPE, wherein, in the step of forming a multiple quantum well, an InSb film is formed on at least one of a lower-surface side and an upper-surface side of the InAs layer so as to be in contact with the InAs layer.

Abstract: A method for producing an epitaxial wafer includes a step of growing an epitaxial layer structure on a III-V semiconductor substrate, the epitaxial layer structure including a III-V semiconductor multiple-quantum well and a III-V semiconductor surface layer, wherein the step of growing the epitaxial layer structure on the substrate is performed such that a lattice mismatch ?? of the multiple-quantum well with respect to the substrate satisfies a range of ?0.13%???<0% or 0%<???+0.13%, the range having a center displaced from zero, and an X-ray rocking curve in a zero-order diffraction peak derived from the multiple-quantum well has a full width at half maximum (FWHM) of 30 seconds or less.

Abstract: An epitaxial wafer of the present invention includes a substrate composed of a III-V compound semiconductor, a multiple quantum well structure composed of a III-V compound semiconductor and located on the substrate, and a top layer composed of a III-V compound semiconductor and located on the multiple quantum well structure. The substrate has a plane orientation of (100) and an off angle of ?0.030° or more and +0.030° or less, and a surface of the top layer has a root-mean-square roughness of less than 10 nm.

Abstract: An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer 23 grown on the absorption layer 23 contains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer 21. In the group III-V compound semiconductor photo detector 11, the InP layer 23 contains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layer 23 generate holes, the silicon contained in the InP layer 23 compensates for the generated carriers. As a result, the second portion 23d of the InP layer 23 has sufficient n-type conductivity.

Abstract: A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 ?m to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 ?m and 2.0 ?m. The ratio of the sensitivity at the wavelength of 1.3 ?m to the sensitivity at the wavelength of 2.0 ?m is not smaller than 0.5 but not larger than 1.6.

Abstract: An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer 23 grown on the absorption layer 23 contains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer 21. In the group III-V compound semiconductor photo detector 11, the InP layer 23 contains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layer 23 generate holes, the silicon contained in the InP layer 23 compensates for the generated carriers. As a result, the second portion 23d of the InP layer 23 has sufficient n-type conductivity.

Abstract: Provided are a photodetector in which, in a III-V semiconductor having sensitivity in the near-infrared region to the far-infrared region, the carrier concentration can be controlled with high accuracy; an epitaxial wafer serving as a material of the photodetector; and a method for producing the epitaxial wafer. Included are a substrate formed of a III-V compound semiconductor; an absorption layer configured to absorb light; a window layer having a larger bandgap energy than the absorption layer; and a p-n junction positioned at least in the absorption layer, wherein the window layer has a surface having a root-mean-square surface roughness of 10 nm or more and 40 nm or less.

Abstract: A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38?x?0.68) layer and a GaAs1-ySby (0.25?y?0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.

Abstract: Provided is, for example, a photodiode in which extension of the sensitivity range to a longer wavelength in the near-infrared region can be achieved without increasing the dark current. A photodiode according to the present invention includes an absorption layer 3 that is positioned on an InP substrate 1 and has a type-II multiple-quantum well structure in which an InGaAs layer 3a and a GaAsSb layer 3b are alternately layered, wherein the InGaAs layer or the GaAsSb layer has a composition gradient in the thickness direction in which the bandgap energy of the InGaAs or the GaAsSb decreases toward the top surface or the bottom surface of the layer.