Abstract: An upper surface of a substrate is etched using a first single-particle film as a mask. The first single-particle film is constituted of first particles having a first particle diameter. The upper surface of the substrate is etched using a second single-particle film as a mask. The second single-particle film is constituted of second particles having a second particle diameter. The second particle diameter is different from the first particle diameter.

Abstract: A method of manufacturing a semiconductor light emitting device, the method including arranging multiple particles M in a monolayer on a substrate S, dry etching the multiple particles M arranged to provide a void between the particles M in a condition by which the particles M are etched while the substrate S is not substantially etched; and dry etching the substrate S by using the multiple particles M1 after the particle etching as an etching mask, thereby forming an uneven structure on one surface X the substrate S.

Abstract: An optical element having, on one surface thereof, multiple recessed sections arranged at a most frequent pitch equal to or less than the wavelength of light in the operating environment, the optical element having, when seen in plan view, multiple domains in which the multiple recessed sections are aligned in a predetermined arrangement, and, multiple protruding sections formed in a region sandwiched between the multiple domains and/or in a region surrounded by the multiple recessed sections inside the domains, the multiple protruding sections accounting for a surface area ratio of 1%-15% as seen in plan view.

Abstract: An organic light emitting diode includes an anodic conductive layer, an organic EL layer, and a cathodic conductive layer formed from Ag or an alloy of Ag, or the like, sequentially laminated on a substrate, such that a two-dimensional lattice structure is provided on a surface of the cathodic conductive layer on an organic EL layer side, an extraction wavelength and a distance between centers of concave portions or convex portions in the two-dimensional lattice structure are within a region surrounded by specific coordinates in a graph illustrating a relationship between the light extraction wavelength and the distance, and the depth of the concave portions or a height of the convex portions is 12 nm to 180 nm.

Abstract: A method of manufacturing a semiconductor light emitting device, including arranging a plurality of particles in a monolayer on a substrate, dry etching the plurality of particles arranged to provide a void between the particles in a condition IN which the particles are etched while the substrate is not substantially etched; and dry etching the substrate using the plurality of particles after the particle etching step as an etching mask, thereby forming an uneven structure on one surface of the substrate.

Abstract: An organic light emitting diode and a method for manufacturing the same. The organic light emitting diode includes an anodic conductive layer, an organic EL layer, and a cathodic conductive layer formed from Ag or an alloy of Ag, or the like, sequentially laminated on a substrate, such that a two-dimensional lattice structure is provided on a surface of the cathodic conductive layer on an organic EL layer side, an extraction wavelength and a distance between centers of concave portions or convex portions in the two-dimensional lattice structure are within a region surrounded by specific coordinates in a graph illustrating a relationship between the light extraction wavelength and the distance, and the depth of the concave portions or a height of the convex portions is 12 nm to 180 nm.

Abstract: An optical element including, on a substrate, an anti-reflection layer on multiple small concave protrusions, which have a modal pitch less than or equal to a wavelength of light in an environment where the optical element is to be used, are formed; in which 80% or more of the concave protrusions include one or more steps, and satisfy the following conditions: 0.12d?ws?0.17d and 0.42h?zs?0.52h, in which d is a diameter of the concave protrusions, h is a depth of the concave protrusions, ws is a total width of the steps in any cut surface; and zs is an average depth of the steps.

Abstract: An organic light emitting diode substrate configured so that the light extraction efficiency of a single color organic light emitting diode element made from one type of light emitting material is high, so that there is no risk of an extraction wavelength deviating from a target light emission wavelength due to slight variations in a fine uneven structure, and to enable extraction of a narrow bandwidth of light, from visible light, that has any central wavelength within the near infrared band and that has a degree of broadness. Also provided are an organic light emitting diode, a manufacturing method for the organic light emitting diode substrate, a manufacturing method for the organic light emitting diode, an image display device, and an illumination device.

Abstract: A semiconductor light emitting device substrate including an uneven structure on one surface, the uneven structure including numerous convex portions and a flat surface between the convex portions, and multiple areas in which the central portions of seven adjacent convex portions are continuously and positionally aligned to become six vertices and intersection points of diagonal lines of a regular hexagon, and the area, shape and lattice orientation of the plurality of areas are random. A semiconductor light emitting device including the semiconductor light emitting device substrate; and a semiconductor functional layer laminated on the semiconductor light emitting device substrate.

Abstract: An organic light emitting diode, which is a top emission-type, is configured so that at least the following are laminated on the substrate: a reflective layer including a metal material; an anode conductive layer including a transparent conductive material; an organic EL layer having a light emitting layer which contains an organic light emitting material; and a cathode conductive layer in which a semi-transmissive metal layer and a transparent conductive layer including a transparent conductive material are laminated. On the surface of the semi-transmissive metal layer that is in contact with the transparent conducive layer side, a two-dimensional lattice structure is formed in which a plurality of protrusions are arranged periodically and two-dimensionally.

Abstract: An upper surface of a substrate is etched using a first single-particle film as a mask. The first single-particle film is constituted of first particles having a first particle diameter. The upper surface of the substrate is etched using a second single-particle film as a mask. The second single-particle film is constituted of second particles having a second particle diameter. The second particle diameter is different from the first particle diameter.

Abstract: A method of manufacturing a semiconductor light emitting device, including arranging a plurality of particles in a monolayer on a substrate, dry etching the plurality of particles arranged to provide a void between the particles in a condition IN which the particles are etched while the substrate is not substantially etched; and dry etching the substrate using the plurality of particles after the particle etching step as an etching mask, thereby forming an uneven structure on one surface of the substrate.

Abstract: Provided is an organic thin-film solar cell, including: a substrate, an anode, an organic thin-film layer that includes an organic semiconductor layer, and a cathode. The anode, the organic thin-film layer that includes the organic semiconductor layer, and the cathode are layered in order on top of the substrate. A recess and protrusion-shaped microstructure that includes a plurality of recesses or protrusions arranged two-dimensionally at random is formed in an interface between the organic thin-film layer and the cathode.

Abstract: An organic light emitting diode and a method for manufacturing the same. The organic light emitting diode includes an anodic conductive layer, an organic EL layer, and a cathodic conductive layer formed from Ag or an alloy of Ag, or the like, sequentially laminated on a substrate, such that a two-dimensional lattice structure is provided on a surface of the cathodic conductive layer on an organic EL layer side, an extraction wavelength and a distance between centers of concave portions or convex portions in the two-dimensional lattice structure are within a region surrounded by specific coordinates in a graph illustrating a relationship between the light extraction wavelength and the distance, and the depth of the concave portions or a height of the convex portions is 12 nm to 180 nm.

Abstract: An organic light-emitting diode manufactured from an organic light-emitting diode substrate in which a concave-convex structure is provided in at least a part of the surface, in which the concave-convex structure is capable of obtaining an atomic force microscope (AFM) image in which a plurality of dots is dispersed when observed by an AFM. A histogram is created by measuring a diameter (nm) of each of the plurality of dots present in a randomly selected region having an area of 25 ?m2 on the atomic force microscope image, resulting in a plurality of peaks including one main peak and one or more sub-peaks, and the chromaticity of light emitted from the organic light-emitting diode is in a range of (x, y)=(0.28 to 0.50, 0.29 to 0.45) in a CIE standard colorimetric system.

Abstract: An organic light emitting diode and a method for manufacturing the same. The organic light emitting diode includes an anodic conductive layer, an organic EL layer, and a cathodic conductive layer formed from Ag or an alloy of Ag, or the like, sequentially laminated on a substrate, such that a two-dimensional lattice structure is provided on a surface of the cathodic conductive layer on an organic EL layer side, an extraction wavelength and a distance between centers of concave portions or convex portions in the two-dimensional lattice structure are within a region surrounded by specific coordinates in a graph illustrating a relationship between the light extraction wavelength and the distance, and the depth of the concave portions or a height of the convex portions is 12 nm to 180 nm.

Abstract: A mold for manufacturing an optical element is provided with a base material, and a recessing and protruding layer formed on a surface of the base material. The recessing and protruding structure of the recessing and protruding layer having a plurality of areas continuously arranged in a positional relationship in which the central point of seven adjacent protrusions is an intersection point of diagonal lines of six vertices of a regular hexagon, and the areas, shapes, and crystal orientations of the plurality of areas are random.

Abstract: A method of manufacturing an organic light-emitting diode including preparing, by a dry etching method using a particle single layer film as an etching mask, a substrate provided with an uneven structure in which a plurality of unevenness is arranged in two dimensions on the surface of the substrate, and stacking, on the uneven structure, at least an anode conductive layer, an EL layer including a light-emitting layer containing an organic light-emitting material, and a cathode conductive layer containing a metal layer, such that the uneven structure is reproduced on the surface of the metal layer on the side of the EL layer, wherein the particle single layer film is formed using a mixture of a plurality of particles having different particle sizes, and an uneven structure is provided which satisfies particular requirements.

Abstract: A method of manufacturing a semiconductor light emitting device, the method including: a particle arranging step for arranging a plurality of particles M in a monolayer on a substrate S, a particle etching step for dry etching the plurality of particles M arranged to provide a void between the particles M in a condition by which the particles M are etched while the substrate S is not etched substantially; and a substrate etching step for dry etching the substrate S by using the plurality of particles M1 after the particle etching step as an etching mask, thereby forming an uneven structure on one surface X the substrate S.

Abstract: The present invention provides an organic light emitting diode substrate configured so that the light extraction efficiency of a single color organic light emitting diode element made from one type of light emitting material is high, so that there is no risk of an extraction wavelength deviating from a target light emission wavelength due to slight variations in a fine uneven structure, and so as to enable extraction of a narrow bandwidth of light, from visible light, that has any central wavelength within the near infrared band and that has a degree of broadness. Also provided are an organic light emitting diode, a manufacturing method for the organic light emitting diode substrate, a manufacturing method for the organic light emitting diode, an image display device, and an illumination device.