Abstract: A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of specific structure has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.

Abstract: A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

Abstract: A chemically amplified negative resist composition is defined as comprising (A) an onium salt having an anion moiety which is a nitrogen-containing carboxylate of fused ring structure, (B) a base resin, and (C) a crosslinker. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

Abstract: A resist composition comprising a resin adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium or iodonium salt of nitrogen-containing carboxylic acid has a high resolution. By lithography, a pattern with minimal LER can be formed.

Abstract: The present invention provides a polymer compound containing a repeating unit shown by the following general formula (1). There can be provided a polymer compound usable in a negative resist composition that can achieve high resolution of 50 nm or less and small LER and cause very few defects, a negative resist composition using the polymer compound, and a patterning process using the negative resist composition.

Abstract: A negative resist composition is provided comprising (A) a polymer comprising recurring units having an acid-eliminatable group and recurring units capable of generating acid upon exposure and (B) a carboxylic acid onium salt. When the negative resist composition is processed by the microprocessing technology, especially EB lithography, it forms a pattern having a very high resolution and minimal LER.

Abstract: A sulfonium salt of formula (0-1) is provided wherein W is alkylene or arylene, R01 is a monovalent hydrocarbon group, m is 0, 1 or 2, k is an integer: 0?k?5+4m, R101, R102 and R103 are a monovalent hydrocarbon group, or at least two of R101, R102 and R103 may bond together to form a ring with the sulfur atom, and L is a single bond, ester, sulfonic acid ester, carbonate or carbamate bond. A resist composition comprising the sulfonium salt as PAG exhibits a very high resolution when processed by EB and EUV lithography. A pattern with minimal LER is obtainable.

Abstract: A polymer compound containing a repeating unit shown by the formula (1c) and one or more repeating units selected from a repeating unit shown by the formula (2) and a repeating unit shown by the formula (3), wherein Mb+ represents a sulfonium cation shown by the formula (a) or an iodonium cation shown by the formula (b), This polymer compound is suitable as a base resin of a resist composition capable of forming a resist film that allows pattern formation with extremely high resolution, small LER, and excellent rectangularity.

Abstract: The present invention is a conductive polymer composition containing a ?-conjugated conductive polymer, a polyanion, and a gemini surfactant. There can be provided a conductive polymer composition that has excellent antistatic performance and excellent application properties, does not adversely affect a resist, and can be suitably used in lithography using electron beam or the like.

Abstract: The present invention provides the onium salt comprises the material represented by the following general formula (0-1), wherein Rf represents a fluorine atom or a trifluoromethyl group; Y represents a cyclic hydrocarbon group having 3 to 30 carbon atoms, the hydrogen atom in the cyclic hydrocarbon group may be substituted by a hetero atom itself or a monovalent hydrocarbon group which may be substituted by a hetero atom(s), and the hetero atom(s) may be interposed into the cyclic structure of the cyclic hydrocarbon group and the monovalent hydrocarbon group; and M+ represents a monovalent cation. There can be provided an onium salt which can improve resolution at the time of forming a pattern and give a pattern with less line edge roughness (LER) when it is used in a chemically amplified positive resist composition.

Abstract: The present invention provides a chemically-amplified positive resist composition including a sulfonium salt capable of providing a pattern having an extremely high resolution with low line edge roughness, and also provides a resist patterning process using the same. The present invention was accomplished by a chemically-amplified positive resist composition including: (A) a salt represented by the following general formula (1); and (B) a resin containing a repeating unit represented by the following general formula (U-1) that dissolves by acid action and increases solubility in an alkaline developer, and a resist patterning process using the same.

Abstract: A chemically amplified negative resist composition is defined as comprising (A) an onium salt having an anion moiety which is a nitrogen-containing carboxylate of fused ring structure, (B) a base resin, and (C) a crosslinker. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

Abstract: A negative resist composition is provided comprising (A) a polymer comprising recurring units having an acid-eliminatable group and recurring units capable of generating acid upon exposure and (B) a carboxylic acid onium salt. When the negative resist composition is processed by the microprocessing technology, especially EB lithography, it forms a pattern having a very high resolution and minimal LER.

Abstract: A photomask blank has a chemically amplified negative resist film comprising (A) a polymer comprising recurring units of specific structure and recurring units having fluorine, (B) a base resin adapted to reduce its solubility in alkaline developer under the action of acid, (C) an acid generator, and (D) a basic compound. The resist film is improved in receptivity to antistatic film.

Abstract: The present invention provides a chemically-amplified negative resist composition including a sulfonium salt capable of providing a pattern having an extremely high resolution with reduced line edge roughness, and also provides a resist patterning process using the same. The present invention was accomplished by a chemically-amplified negative resist composition including (A) a salt represented by the following general formula (1) and (B) a resin containing one or more kinds of repeating unit represented by the following general formulae (UN-1) and (UN-2) and a resist patterning process using the same.

Abstract: A resist composition comprising a resin adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium or iodonium salt of nitrogen-containing carboxylic acid has a high resolution. By lithography, a pattern with minimal LER can be formed.

Abstract: A photomask blank has a chemically amplified positive resist film comprising (A) a polymer comprising recurring units having a specific substituent group on aromatic ring and recurring units having at least one fluorine atom, (B) a base resin which is decomposed under the action of acid to increase its solubility in alkaline developer, (C) an acid generator, and (D) a basic compound. The resist film is improved in age stability and antistatic film-receptivity.

Abstract: A resist composition is provided comprising (A) a carboxylic acid sulfonium salt whose anion moiety has a bulky structure of arenecarboxylate in which secondary or tertiary carbon atoms bond at both ortho-positions relative to the carbon atom in bond with carboxylate, as an acid diffusion regulator and (B) a polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. When processed by EB or EUV lithography, the resist composition exhibits a very high resolution and forms a pattern with minimal LER.

Abstract: The present invention provides the chemically amplified negative resist composition comprises an onium salt represented by the following general formula (0-1), a resin which becomes alkali insoluble by an action of an acid and an acid generator, wherein Rf represents a fluorine atom or a trifluoromethyl group; Y represents a cyclic hydrocarbon group having 3 to 30 carbon atoms, the hydrogen atom in the cyclic hydrocarbon group may be substituted by a hetero atom itself or a monovalent hydrocarbon group which may be substituted by a hetero atom(s), and the hetero atom(s) may be interposed into the cyclic structure of the cyclic hydrocarbon group and the monovalent hydrocarbon group; and M+ represents a monovalent cation. There can be provided a chemically amplified negative resist composition which can improve resolution at the time of forming a pattern and give a pattern with less line edge roughness (LER).

Abstract: A sulfonium salt of formula (0-1) is provided wherein W is alkylene or arylene, R01 is a monovalent hydrocarbon group, m is 0, 1 or 2, k is an integer: 0?k?5+4m, R101, R102 and R103 are a monovalent hydrocarbon group, or at least two of R101, R102 and R103 may bond together to form a ring with the sulfur atom, and L is a single bond, ester, sulfonic acid ester, carbonate or carbamate bond. A resist composition comprising the sulfonium salt as PAG exhibits a very high resolution when processed by EB and EUV lithography. A pattern with minimal LER is obtainable.