Abstract: A sulfonium salt of formula (1) is provided wherein A1 is a divalent hydrocarbon group, A2 is a divalent hydrocarbon group, A3 is hydrogen or a monovalent hydrocarbon group, B1 is an alkylene or arylene group, k is 0 or 1, R1, R2 and R3 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl. A resist composition comprising the sulfonium salt as PAG exhibits a very high resolution when processed by EB and EUV lithography. A pattern with minimal LER is obtainable.

Abstract: A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.

Abstract: A polymer comprising recurring units having an acid-eliminatable group on a side chain and aromatic ring-bearing cyclic olefin units is used to formulate a chemically amplified negative resist composition. Any size shift between the irradiated pattern and the formed resist which can arise in forming a pattern including isolated feature and isolated space portions is reduced, and a high resolution is obtained.

Abstract: A resist composition is provided comprising (A) a carboxylic acid sulfonium salt whose anion moiety has a bulky structure of arenecarboxylate in which secondary or tertiary carbon atoms bond at both ortho-positions relative to the carbon atom in bond with carboxylate, as an acid diffusion regulator and (B) a polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. When processed by EB or EUV lithography, the resist composition exhibits a very high resolution and forms a pattern with minimal LER.

Abstract: A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition exhibits a high resolution and forms a negative resist pattern of a profile with minimized LER and undercut.

Abstract: The present invention provides a chemically-amplified negative resist composition including a sulfonium salt capable of providing a pattern having an extremely high resolution with reduced line edge roughness, and also provides a resist patterning process using the same. The present invention was accomplished by a chemically-amplified negative resist composition including (A) a salt represented by the following general formula (1) and (B) a resin containing one or more kinds of repeating unit represented by the following general formulae (UN-1) and (UN-2) and a resist patterning process using the same.

Abstract: The present invention provides a chemically-amplified positive resist composition including a sulfonium salt capable of providing a pattern having an extremely high resolution with low line edge roughness, and also provides a resist patterning process using the same. The present invention was accomplished by a chemically-amplified positive resist composition including: (A) a salt represented by the following general formula (1); and (B) a resin containing a repeating unit represented by the following general formula (U-1) that dissolves by acid action and increases solubility in an alkaline developer, and a resist patterning process using the same.

Abstract: The present invention provides the onium salt comprises the material represented by the following general formula (0-1), wherein Rf represents a fluorine atom or a trifluoromethyl group; Y represents a cyclic hydrocarbon group having 3 to 30 carbon atoms, the hydrogen atom in the cyclic hydrocarbon group may be substituted by a hetero atom itself or a monovalent hydrocarbon group which may be substituted by a hetero atom(s), and the hetero atom(s) may be interposed into the cyclic structure of the cyclic hydrocarbon group and the monovalent hydrocarbon group; and M+ represents a monovalent cation. There can be provided an onium salt which can improve resolution at the time of forming a pattern and give a pattern with less line edge roughness (LER) when it is used in a chemically amplified positive resist composition.

Abstract: The present invention provides the chemically amplified negative resist composition comprises an onium salt represented by the following general formula (0-1), a resin which becomes alkali insoluble by an action of an acid and an acid generator, wherein Rf represents a fluorine atom or a trifluoromethyl group; Y represents a cyclic hydrocarbon group having 3 to 30 carbon atoms, the hydrogen atom in the cyclic hydrocarbon group may be substituted by a hetero atom itself or a monovalent hydrocarbon group which may be substituted by a hetero atom(s), and the hetero atom(s) may be interposed into the cyclic structure of the cyclic hydrocarbon group and the monovalent hydrocarbon group; and M+ represents a monovalent cation. There can be provided a chemically amplified negative resist composition which can improve resolution at the time of forming a pattern and give a pattern with less line edge roughness (LER).

Abstract: A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 ?m, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.

Abstract: A sulfonium salt of formula (1) is provided wherein A1 is a divalent hydrocarbon group, A2 is a divalent hydrocarbon group, A3 is hydrogen or a monovalent hydrocarbon group, B1 is an alkylene or arylene group, k is 0 or 1, R1, R2 and R3 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl. A resist composition comprising the sulfonium salt as PAG exhibits a very high resolution when processed by EB and EUV lithography. A pattern with minimal LER is obtainable.

Abstract: The present invention is a conductive polymer composition containing a ?-conjugated conductive polymer, a polyanion, and a gemini surfactant. There can be provided a conductive polymer composition that has excellent antistatic performance and excellent application properties, does not adversely affect a resist, and can be suitably used in lithography using electron beam or the like.

Abstract: A positive resist composition comprises a polymer comprising repeat units having formula (1) or (2). Herein denotes an aromatic hydrocarbon group, R1 is H, methyl or trifluoromethyl, R2 is H, C1-C12 alkyl or aromatic hydrocarbon group, R3 is C1-C12 alkyl, or R2 and R3 may bond together to form a ring, and a is 1 or 2. When used in the ArF lithography, the resist composition exhibits high resolution. When used in the EB image writing for mask processing, the resist composition exhibits high resolution and sensitivity sufficient to comply with high-accelerating-voltage EB irradiation, and high etch resistance.

Abstract: A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition ensures an effective sensitivity, makes more uniform the distribution and diffusion of the acid generating component in a resist film, and suppresses deactivation of acid at the substrate interface. The pattern can be formed to a profile which is improved in LER and undercut.

Abstract: A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition ensures an effective sensitivity, makes more uniform the distribution and diffusion of the acid generating component in a resist film, and suppresses deactivation of acid at the substrate interface. The pattern can be formed to a profile which is improved in LER and undercut.

Abstract: A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition exhibits a high resolution and forms a negative resist pattern of a profile with minimized LER and undercut.

Abstract: A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning.

Abstract: There is disclosed a sulfonium salt shown by the following general formula (1). There can be a sulfonium salt capable of introducing an acid-generating unit generating an acid having an appropriate acid strength and not impairing adhesion with a substrate into a base polymer; a polymer using the said sulfonium salt; a chemically amplified resist composition using the said polymer as a base polymer; and a patterning process using the said chemically amplified resist composition.

Abstract: A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition ensures an effective sensitivity, makes more uniform the distribution and diffusion of the acid generating component in a resist film, and suppresses deactivation of acid at the substrate interface. The pattern can be formed to a profile which is improved in LER and undercut.

Abstract: There is disclosed a negative resist composition comprising at least: (A) a base polymer that is alkaline-soluble and is made alkaline-insoluble by action of an acid; (B) an acid generator; and (C) a basic component, wherein the base polymer at least contains a polymer including repeating units represented by the following general formula (1) and general formula (2) and having a weight average molecular weight of 1,000 to 10,000. There can be a negative resist composition hardly causing a bridge in forming a pattern and providing a high resolution and a patterning process using the same.