Patents by Inventor Keiichi Nakazawa
Keiichi Nakazawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160020236Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device (1) includes a silicon substrate (22), and at least a first photodiode (33) formed in the silicon substrate. The device also includes an epitaxial layer (21) with a first surface adjacent a surface of the silicon substrate, and a transfer transistor (31) with a gate electrode (41) that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.Type: ApplicationFiled: March 3, 2014Publication date: January 21, 2016Applicant: SONY CORPORATIONInventors: Yosuke TANAKA, Toshifumi WAKANO, Keiji TATANI, Takashi NAGANO, Hayato IWAMOTO, Keiichi NAKAZAWA, Tomoyuki HIRANO, Shinpei YAMAGUCHI, Shunsuke MARUYAMA
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Patent number: 8896137Abstract: A solid-state image pickup device includes: a silicon layer; a pixel portion formed in the silicon layer for processing and outputting signal charges obtained by carrying out photoelectric conversion for incident lights; an alignment mark formed in a periphery of the pixel portion and in the silicon layer; and a contact portion through which a first electrode within a wiring layer formed on a first surface of the silicon layer, and a second electrode formed on a second surface opposite to the first surface of the silicon layer through an insulating film are connected, wherein the alignment mark and the contact portion are formed from conductive layers made of the same conductive material and formed within respective holes each extending completely through the silicon layer through respective insulating layers made of the same material.Type: GrantFiled: August 20, 2012Date of Patent: November 25, 2014Assignee: Sony CorporationInventors: Keiichi Nakazawa, Takayuki Enomoto
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Publication number: 20140327052Abstract: Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.Type: ApplicationFiled: April 3, 2014Publication date: November 6, 2014Applicant: Sony CorporationInventors: Keiji Tatani, Takuji Matsumoto, Yasushi Tateshita, Fumihiko Koga, Takashi Nagano, Takahiro Toyoshima, Tetsuji Yamaguchi, Keiichi Nakazawa, Naoyuki Miyashita, Yoshihiko Nagahama
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Patent number: 8728852Abstract: A solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.Type: GrantFiled: July 8, 2011Date of Patent: May 20, 2014Assignee: Sony CorporationInventors: Keiji Tatani, Takuji Matsumoto, Yasushi Tateshita, Fumihiko Koga, Takashi Nagano, Takahiro Toyoshima, Tetsuji Yamaguchi, Keiichi Nakazawa, Naoyuki Miyashita, Yoshihiko Nagahama
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Patent number: 8558947Abstract: Disclosed herein is a solid-state image pickup element, including a plurality of pixels each having a photoelectric conversion portion for converting a quantity of incident light into an electric signal, and a plurality of pixel transistors; wiring layers formed on one surface side of a semiconductor substrate having the plurality of pixels formed therein, a light made incident from a side opposite to the one surface having the wiring layers formed thereon being received by corresponding one of the photoelectric conversion portions; a scribe line formed in a periphery of a pixel portion composed of the plurality of pixels; and square-shaped termination detecting portions each having higher hardness than that of the semiconductor substrate and formed in the scribe line; wherein each of the square-shaped termination detecting portions has a side parallel with a direction of the scribe line of the semiconductor substrate.Type: GrantFiled: February 4, 2010Date of Patent: October 15, 2013Assignee: Sony CorporationInventors: Takayuki Enomoto, Keiichi Nakazawa
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Publication number: 20120313211Abstract: A solid-state image pickup device includes: a silicon layer; a pixel portion formed in the silicon layer for processing and outputting signal charges obtained by carrying out photoelectric conversion for incident lights; an alignment mark formed in a periphery of the pixel portion and in the silicon layer; and a contact portion through which a first electrode within a wiring layer formed on a first surface of the silicon layer, and a second electrode formed on a second surface opposite to the first surface of the silicon layer through an insulating film are connected, wherein the alignment mark and the contact portion are formed from conductive layers made of the same conductive material and formed within respective holes each extending completely through the silicon layer through respective insulating layers made of the same material.Type: ApplicationFiled: August 20, 2012Publication date: December 13, 2012Applicant: SONY CORPORATIONInventors: Keiichi NAKAZAWA, Takayuki ENOMOTO
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Patent number: 8247306Abstract: A solid-state image pickup device includes: a silicon layer; a pixel portion formed in the silicon layer for processing and outputting signal charges obtained by carrying out photoelectric conversion for incident lights; an alignment mark formed in a periphery of the pixel portion and in the silicon layer; and a contact portion through which a first electrode within a wiring layer formed on a first surface of the silicon layer, and a second electrode formed on a second surface opposite to the first surface of the silicon layer through an insulating film are connected, wherein the alignment mark and the contact portion are formed from conductive layers made of the same conductive material and formed within respective holes each extending completely through the silicon layer through respective insulating layers made of the same material.Type: GrantFiled: February 5, 2010Date of Patent: August 21, 2012Assignee: Sony CorporationInventors: Keiichi Nakazawa, Takayuki Enomoto
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Publication number: 20110269259Abstract: A solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.Type: ApplicationFiled: July 8, 2011Publication date: November 3, 2011Applicant: SONY CORPORATIONInventors: Keiji Tatani, Takuji Matsumoto, Yasushi Tateshita, Fumihiko Koga, Takashi Nagano, Takahiro Toyoshima, Tetsuji Yamaguchi, Keiichi Nakazawa, Naoyuki Miyashita, Yoshihiko Nagahama
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Publication number: 20100230773Abstract: A solid-state image pickup device includes: a silicon layer; a pixel portion formed in the silicon layer for processing and outputting signal charges obtained by carrying out photoelectric conversion for incident lights; an alignment mark formed in a periphery of the pixel portion and in the silicon layer; and a contact portion through which a first electrode within a wiring layer formed on a first surface of the silicon layer, and a second electrode formed on a second surface opposite to the first surface of the silicon layer through an insulating film are connected, wherein the alignment mark and the contact portion are formed from conductive layers made of the same conductive material and formed within respective holes each extending completely through the silicon layer through respective insulating layers made of the same material.Type: ApplicationFiled: February 5, 2010Publication date: September 16, 2010Applicant: SONY CORPORATIONInventors: Keiichi NAKAZAWA, Takayuki ENOMOTO
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Publication number: 20100225774Abstract: Disclosed herein is a solid-state image pickup element, including a plurality of pixels each having a photoelectric conversion portion for converting a quantity of incident light into an electric signal, and a plurality of pixel transistors; wiring layers formed on one surface side of a semiconductor substrate having the plurality of pixels formed therein, a light made incident from a side opposite to the one surface having the wiring layers formed thereon being received by corresponding one of the photoelectric conversion portions; a scribe line formed in a periphery of a pixel portion composed of the plurality of pixels; and square-shaped termination detecting portions each having higher hardness than that of the semiconductor substrate and formed in the scribe line; wherein each of the square-shaped termination detecting portions has a side parallel with a direction of the scribe line of the semiconductor substrate.Type: ApplicationFiled: February 4, 2010Publication date: September 9, 2010Applicant: SONY CORPORATIONInventors: Takayuki ENOMOTO, Keiichi NAKAZAWA
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Publication number: 20090256226Abstract: Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.Type: ApplicationFiled: April 8, 2009Publication date: October 15, 2009Applicant: Sony CorporationInventors: Keiji Tatani, Takuji Matsumoto, Yasushi Tateshita, Fumihiko Koga, Takashi Nagano, Takahiro Toyoshima, Tetsuji Yamaguchi, Keiichi Nakazawa, Naoyuki Miyashita, Yoshihiko Nagahama
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Publication number: 20060081864Abstract: An organopolysiloxane composition which cures to a resinous solid has high strength, transparency, and resistance to thermal- and photo-degradation, and is especially suited for encapsulating LEDs. The composition contains specific addition curable organopolysiloxanes having D, T, and Q units, and a proportion of silicon-bonded aromatic groups.Type: ApplicationFiled: December 2, 2005Publication date: April 20, 2006Applicant: Wacker-Chemie GmbHInventor: Keiichi Nakazawa
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Patent number: 5427057Abstract: A self-clamping holder capable of holding a polysilicon rod using the weight of the polysilicon rod is disclosed. The holder includes a generally cup-shaped adapter having an open end facing downward, and at least three clamp jaws rotatably mounted on the adapter adjacent to the open end and circumferentially spaced at equal angular intervals for clamping or gripping an end of the polysilicon rod received in the adapter. The clamp jaws have arcuate cam surfaces disposed interiorly of the adapter and profiled such that a radius of curvature of the cam surfaces gradually increases as the clamp jaws turn in a downward direction of the adapter. With this construction, the polysilicon rod is firmly gripped by the clamp jaws against detachment from the holder. The clamp jaws produces a clamping force acting on the peripheral surface of the polysilicon rod and distributed uniformly in the circumferential direction of the polysilicon rod.Type: GrantFiled: July 29, 1994Date of Patent: June 27, 1995Assignee: Shin-Etsu Handotai Co., Ltd.Inventors: Michiaki Hattori, Keiichi Nakazawa
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Patent number: 5214053Abstract: Thiourea derivatives represented by the formula (I) ##STR1## wherein R.sub.1 and R.sub.2 are the same or different and each represents a lower alkyl group, or R.sub.1 and R.sub.2 taken together represent a group having the formula --(CH.sub.2).sub.x --CHR.sub.3 --(CH.sub.2).sub.y -- in which R.sub.3 represents hydrogen or a lower alkyl group and x and y represent an integer of 0 to 2, respectively, A represents the formula --CH.dbd.CH-- or --CH.dbd.N--, 1 is 1 or 2, m represents an integer of 0 to 2 and n represents an integer of 1 to 5.The thiourea derivatives possess an antiulcer activity and an antimicrobial activity against Helicobacter pyroli and are useful as an antiulcer agent and an antimicrobial agent against Helicobacter pyroli.Type: GrantFiled: September 2, 1992Date of Patent: May 25, 1993Assignee: Terumo Kabushiki KaishaInventors: Keiichi Nakazawa, Masashi Isozaki, Shingo Koyama