Abstract: [Object] To sufficiently reduce frequency of error occurrence in memory cells. [Solution] A reading unit reads read data from a memory cell, the read data including an information bit and reversal information for determining whether or not the information bit has been reversed. In addition, an error detection/correction unit detects the presence or absence of an error in the information bit and corrects the error. A data reversing unit reverses the information bit that has the error corrected and the reversal information. Furthermore, a writing unit writes the reversed information bit and the reversed reversal information in the memory cell.

Abstract: To suppress the degradation of memory cells in a non-volatile memory. A read processing unit performs a read process for reading read data from each of a plurality of memory cells on the basis of a first threshold. An error detection unit detects presence or absence of an error in the read data and specifies memory cells in which the error is present among the plurality of memory cells. A re-read processing unit performs a re-read process for reading data, as re-read data, from the specified memory cells on the basis of a second threshold different from the first threshold. A refresh processing unit rewrites, for a memory cell of which the re-read data has a different value from the read data among the specified memory cells, data with the re-read data as a refresh process.

Abstract: Data are stored using a writing method according to the property of the data in a storage device. An area defining unit defines, in a second memory, a system area for storing system information causing a system to operate and a cache area temporarily storing data of a first memory. A moving processing unit moves data stored in the cache area to the first memory at a predetermined point in time. An access control unit accesses the second memory in accordance with the definition with regard to access corresponding to the system area or the cache area, and read data from the first memory with regard to read-access corresponding to those other than the system area and the cache area.

Abstract: A storage control device includes: a detection unit that determines whether a preliminary process of saving data from a first memory to a second memory is necessary, where the second memory includes a suspend area and a typical area; a preliminary processing unit that writes a first value to the suspend area when the detection unit has determined that the preliminary process is necessary; and a saving processing unit that writes a second value corresponding to the data. The first value is different from the second value when the detection unit has determined that the preliminary process is necessary.

Abstract: A storage control apparatus includes: a pre-processing-execution determining block for determining whether or not either one of an erase operation and a program operation is to be executed as pre-processing in a write operation to be carried out on a predetermined data area to serve as a write-operation object; and a pre-read processing block for reading out pre-read data from the data area prior to the write operation if a result of the determination indicates that the pre-processing is to be executed. The apparatus further includes a bit operating block for carrying out: the pre-processing and one of the erase and program operations which is not the pre-processing as post-processing if a result of the determination indicates that the pre-processing is to be executed; and the post-processing without carrying out the pre-processing if a determination result indicates that the pre-processing is not to be executed.

Abstract: To suppress the degradation of memory cells in a non-volatile memory. A read processing unit performs a read process for reading read data from each of a plurality of memory cells on the basis of a first threshold. An error detection unit detects presence or absence of an error in the read data and specifies memory cells in which the error is present among the plurality of memory cells. A re-read processing unit performs a re-read process for reading data, as re-read data, from the specified memory cells on the basis of a second threshold different from the first threshold. A refresh processing unit rewrites, for a memory cell of which the re-read data has a different value from the read data among the specified memory cells, data with the re-read data as a refresh process.

Abstract: A storage control apparatus including a first error detection block and a second error detection block is provided. The first error detection block is configured to execute error detection in accordance with a first data unit read from a memory and a first error detection code corresponding to the first data unit. The second error detection block is configured, if a second error detection code corresponding to a second data unit smaller than the first data unit is held in an error detection code hold block different from the memory, to execute error detection in accordance with the second data unit read from the memory and the second error detection code held in the error detection code hold block.

Abstract: Reduction in deterioration of a memory cell in a non-volatile memory is achieved. A memory controller is configured to include a time measuring unit, an elapsed time determination unit, and a read unit. The time measuring unit measures time elapsed from predetermined timing on an address where data written. The elapsed time determination unit determines whether the elapsed time exceeds a fixed amount of time upon receiving an instruction to read out the data from the address. The read control unit causes reading-out of the data from the address to pause in a case where the elapsed time is determined not to exceed the fixed amount of time.

Abstract: [Object] To sufficiently reduce frequency of error occurrence in memory cells. [Solution] A reading unit reads read data from a memory cell, the read data including an information bit and reversal information for determining whether or not the information bit has been reversed. In addition, an error detection/correction unit detects the presence or absence of an error in the information bit and corrects the error. A data reversing unit reverses the information bit that has the error corrected and the reversal information. Furthermore, a writing unit writes the reversed information bit and the reversed reversal information in the memory cell.

Abstract: The convenience of an information processing system is improved. In a memory controller of the information processing system, a request generation unit generates, with respect to a nonvolatile memory including a data area in which data is stored and a redundancy area in which a redundancy for performing error detection and error correction of the data is stored, a request of requesting writing or reading for any one of the data, and the redundancy, a code word constituted of the data and the redundancy. A control unit issues the generated request and controls writing and reading with respect to the nonvolatile memory.

Abstract: An error detection-correction unit reads system information for operating a system from a first memory and performs error detection-correction processing. A control unit supplies the system information to a host computer in a case where the error detection-correction processing is successful. In addition, the control unit reads a backup of the system information from a second memory that is different from the first memory and supplies the backup of the system information to the host computer in a case where the detection-correction processing fails.

Abstract: A storage controller includes: an error information management section configured to manage information in a plurality of addresses of a memory; and a refresh object determination section configured to determine a refresh object address in the memory based on the error information.

Abstract: Provided is a storage control device including a first read processing unit configured to read data having any one value of a first value or a second value based on a first threshold value in a memory cell, the data being read as first read data, a first write processing unit configured to rewrite the memory cell to the first value when write data is the first value and the first read data is the second value, a second read processing unit configured to read second read data based on a second threshold value different from the first threshold value in the memory cell, and a second write processing unit configured to rewrite the memory cell to the second value when the write data is the second value and the second read data is the first value.

Abstract: Disclosed herein is a storage controlling apparatus including: a decision portion configured to decide whether or not a bit number of a specific value from between binary values is greater than a reference value in at least part of input data to a memory cell, which executes rewriting to one of the binary values and rewriting to the other one of the binary values in order in a writing process, to generate decision data indicative of a result of the decision; and a write side outputting portion configured to output, when it is decided that the bit number is greater than the reference value, the input data at least part of which is inverted as write data to the memory cell together with the decision data.

Abstract: Provided is a memory control device, including a write control unit that sequentially designates a memory block, a write processing unit that writes write data in the designated memory block, a verifying unit that reads read data from the memory block and verifies whether or not the read data matches the write data for each of a plurality of memory cells, a retry inhibiting unit that inhibits a retry process from being performed in a memory cell in which the read data matches the write data among the plurality of memory cells, and a retry control unit that designates at least some memory blocks among the plurality of memory blocks and simultaneously executes the retry process when the read data does not match the write data in any one of the plurality of memory cells in which all the write data is written.

Abstract: There is provided a memory control apparatus including: a pre-read processing section reading pre-read data from a data area to be written to before a write process in a predetermined data area of a memory cell array; a conversion determination section which, upon selectively allowing the pre-read data to transition to either a first conversion candidate or a second conversion candidate of the write data to be written in the write process, generates a determination result for selecting either of the candidates based on the larger of two values of which one is the number of bits transitioning from the first value to the second value and of which the other is the number of bits transitioning from the second value to the first value; and a conversion control section selecting either of the candidates in accordance with the determination result.

Abstract: A storage controlling apparatus includes a command decoder and command processing section. The command decoder decides whether or not a plurality of access object addresses of different commands included in a command string correspond to words different from each other in a same one of blocks of a memory cell array which have a common plate. The command processing section collectively and successively executes, when it is decided that the access object addresses of the commands correspond to the words different from each other in the same block of the memory cell array, those of operations in processing of the commands in which an equal voltage is applied as a drive voltage between the plate and a bit line.

Abstract: A storage control apparatus includes a standard read request unit, an error correcting unit, and a high-accuracy read request unit. The standard read request unit is configured to issue a request for a read with standard accuracy to a read address in a memory. The error correcting unit is configured to perform error correction on the basis of an error correcting code and data returned by the memory in response to the read request with the standard accuracy. The high-accuracy read request unit is configured to issue, when an error incapable of being corrected by the error correction is caused, a request again for a read with higher accuracy than the standard accuracy to the read address.

Abstract: Disclosed herein is a storage controlling apparatus, including: a status acquisition section configured to acquire status including a number of times of execution of verification after writing into a memory from the memory; a history information retention section configured to retain a history of the status as history information in an associated relationship with each of predetermined regions of the memory; and a region selection section configured to select a region which satisfies a condition in accordance with the history information when a new region is to be used in the memory.

Abstract: A storage control device includes a first rewriting section, a second rewriting section, and a first retry control section. The first rewriting section performs first rewrite to rewrite other of two binary values into a memory cell in which one of the two binary values is written. The second rewriting section performs second rewrite to rewrite the one of the two binary values into the memory cell in which the other of the two binary values is written. The first retry control section causes the memory cell that has undergone the first rewrite to be subjected to the second rewrite followed by the first rewrite again if an error occurs during the first rewrite.