Abstract: A process for manufacturing a semiconductor device includes defining chip sections on a wafer by scribe lines with each chip section having chip electrodes formed thereon. The wafer is covered with a passivating film except for on the chip electrodes. Aluminum interconnection layers are provided such that each layer is connected to the chip electrode at one end thereof and the other end of the layer is extended towards the central portion of the chip section. A cover coating film is applied on the passivating film and the layers. A number of apertures are formed in the coating film passing therethrough, and bump electrodes are formed at the position corresponding to the apertures. The chip sections are then separated from each other along the scribe lines into semiconductor devices.

Abstract: In a method of manufacturing a chip size semiconductor device comprising a semiconductor chip and a carrier tape including an insulating film and wiring patterns formed on one surface of the insulating film, the method comprises the steps of bonding the semiconductor chip and the carrier tape by the use of an adhesive film having a predetermined size corresponding to an adhesive area of the semiconductor chip. The step of bonding comprises the substeps of cutting away the adhesive film by punching from an adhesive film tape held above the semiconductor chip mounted on a table and subsequently setting the adhesive film on the adhesive area by moving the adhesive film downwardly.

Abstract: There is provided a carrier film (130, 140) having a plurality of slits (135) formed by the periphery of a chip mounting region (138) on which a semiconductor chip 10 is to be mounted. The chip mounting region is rectangular and four slits are formed along the four sides of the chip mounting region. The slits may be formed by means of punching with a die or etching.

Abstract: A film carrier semiconductor device 10 comprises a semiconductor bare chip 20 and a carrier film 30. Chip electrodes 21 are provided on the bare chip 20. Each chip electrode 21 is electrically connected to the carrier film 30. Bump electrodes 37 are formed and arranged as an array on the carrier film 30 on the side of the other surface 31b of the film 30. Interconnection layers 32 are provided on the carrier film 30 to connect some of the chip electrodes 21b to the bump electrodes 37a and 37b. The semiconductor device 10 also comprises a noise blocking layer 60 provided on the carrier film 30 outside the chip mounting region. The noise blocking layer 60 is electrically connected to at least one of the chip electrodes 21a.

Abstract: An insulating film has conductive layers on a first surface and conductive protrusions on a second surface. The conductive layers are connected to the conductive protrusions via through holes provided in the insulating film. A semiconductor chip having pads is adhered by an adhesive layer to the insulating film. Then, the conductive layers are locally pressured, so that the conductive layers are electrically connected to respective ones of the pads.

Abstract: A ceramic substrate comprises a ceramic body and a wiring pattern made of silver series selectively formed on the major face of the ceramic body. The ceramic body contains silver particles of 0.1 to 2.5 percents.

Abstract: A low temperature sintering, low dielectric inorganic composition is a ternary inorganic composition comprising cordierite, quartz glass and lead borosilicate glass, wherein if the amounts of the cordierite, quartz glass and lead borosilicate glass are represented by X, Y and Z (wt %) respectively, the composition of the ternary system falls within the range encircled by the following four points (a) to (d) including the lines between each neighboring two points:(X=35; Y=0; Z=65) (a)(X=65; Y=0; Z=35) (b)(X=0; Y=65; Z=35) (c)(X=0; Y=35; Z=65) (d)The inorganic composition has a dielectric constant substantially lower than that of the conventional composition while maintaining high reliability such as an ability of being sintered at a low temperature, high insulation properties and high resistance to water as well as excellent mechanical properties such as strength.

Abstract: A process for manufacturing a hybrid multilayer ceramic wiring substrate having a low dielectric constant includes a conductor wiring forming step and an insulating layer forming step. The conductor wiring forming step comprises the steps of: applying a photoresist upon a multilayer ceramic wiring substrate in which a plurality of conductor layers are laminated via insulation layers formed of a low temperature sinterable ceramic composition having a low dielectric constant; exposing the photoresist to light and developing the exposed photoresist to form a mask pattern; and selectively plating the mask pattern. The insulating layer forming step comprises the steps of: printing a photo-setting paste for an insulating layer on the substrate and drying the paste; forming a via hole pattern by light exposure and development using a mask; and burying and sintering a conductor paste into via holes.