Abstract: A light emitting element has first and second electrodes. In plan view, the first electrode has a first connecting portion, a first extending portion, and two second extending portions. The second electrode has a second connecting portion, and two third extending portions. The first extending portion extends linearly toward the second connecting portion, and the second extending portions are arranged on two sides of the first extending portion. The second extending portions each has two bent portions and a linear portion extending parallel to the first extending portion and disposed between the two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the second extending portions. The second extending portions extend beyond the second connecting portion. The first and second connecting portions are symmetrically arranged with respect to a virtual line parallel to one side of the light emitting element.

Abstract: A light emitting element includes a semiconductor structure including a first layer including a first and a second regions, and a second layer above the second region, the first region including extending portions each extending into the second region from an outer peripheral region; a first insulating layer including first through-holes respectively located on the extending portions, and a second through-hole located above the second region; a second insulating layer including a third and a fourth through-holes; a first external electrode connected with the first layer via the first through-holes; and a second external electrode connected with the second layer via the second through-hole. The extending portions are each located in an area, on a top surface of the first layer, other than an area overlapping any of corner portions of the first external electrode and other than an area overlapping any of corner portions of the second external electrode.

Abstract: A light emitting element has first and second electrodes. In plan view, the first electrode has a first connecting portion configured to be bonded with a conductive wire, a first extending portion, and two second extending portions. The second electrode has a second connecting portion configured to be bonded with a conductive wire, and two third extending portions. The first extending portion extends linearly toward the second connecting portion, and the two second extending portions are arranged on two sides of the first extending portion. The second extending portions each has two bent portions and a linear portion extending parallel to the first extending portion and disposed between the two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the second extending portions. Each of the second extending portions extends beyond a position of the second connecting portion.

Abstract: A light emitting device includes a light emitting element and a mounting substrate on which the light emitting element is mounted such that the mounting substrate faces an upper side of the light emitting element. The light emitting element includes a substrate, first and second light emitting cells each including a semiconductor layered structure that includes an n-side semiconductor layer and a p-side semiconductor layer in order from a substrate side, a first insulating layer, wiring electrodes, and a second insulating layer. One of the wiring electrodes is electrically connected to the n-side semiconductor layer of the first light emitting cell and to the p-side semiconductor layer of the second light emitting cell. The mounting substrate includes wiring terminals, one of which is electrically connected to the n-side semiconductor layer of the first light emitting cell and to the p-side semiconductor layer of the second light emitting cell.

Abstract: Provided are a light emitting element and a light emitting device with improved light emission intensity distribution. A light emitting element includes a light-transmissive substrate, an n-type semiconductor layer, a first p-type semiconductor layer, a first p-side electrode, a first n-side electrode, a second p-type semiconductor layer, a second p-side electrode, and a second n-side electrode. A light emitting device includes the light emitting element, and an external connection electrode provided at the light emitting element on a side opposite to the light-transmissive substrate. The external connection electrode includes an n-side external connection electrode connected to the first n-side electrode and the second n-side electrode, a first p-side external connection electrode connected to the first p-side electrode, and a second p-side external connection electrode connected to the second p-side electrode.

Abstract: A light emitting element includes an n-pad electrode, a light-transmissive electrically conductive film on an upper surface of the p-side semiconductor layer, and a p-pad electrode on an upper surface of the light-transmissive electrically conductive film. When viewed from above, the semiconductor layered structure has a pentagonal outer peripheral shape having a first side, a second side adjacent to the first side at a right angle, a third side adjacent to the first side at a right angle, a fourth side adjacent to the second side at an obtuse angle, and a fifth side adjacent to the third side and the fourth side at an obtuse angle to the third side. The n-pad electrode is disposed near the first side, and the p-pad electrode is disposed closer to a first vertex where the fourth side and the fifth side meet, than the n-pad electrode is disposed to the first vertex.

Abstract: The light emitting element includes: first and second light emitting cells each including an n-side semiconductor layer, an active layer and a p-side semiconductor layer; a first insulating film covering the first and second light emitting cells, and provided with first p-side and first n-side openings; a wiring electrode connected to the first light emitting cell at the first n-side opening, and connected to the second light emitting cell at the first p-side opening; a first electrode connected to the first light emitting cell; a second electrode connected to the second light emitting cell; a second insulating film provided with a second p-side opening formed above the first electrode, a second n-side opening formed above the second electrode, and a third opening formed above the wiring electrode; a first external connection portion connected to the first electrode; and a second external connection portion connected to the second electrode.

Abstract: A light emitting element includes a semiconductor structure including a first layer including a first and a second regions, and a second layer above the second region, the first region including extending portions each extending into the second region from an outer peripheral region; a first insulating layer including first through-holes respectively located on the extending portions, and a second through-hole located above the second region; a second insulating layer including a third and a fourth through-holes; a first external electrode connected with the first layer via the first through-holes; and a second external electrode connected with the second layer via the second through-hole. The extending portions are each located in an area, on a top surface of the first layer, other than an area overlapping any of corner portions of the first external electrode and other than an area overlapping any of corner portions of the second external electrode.

Abstract: A light emitting element includes an n-side semiconductor layer, a p-side semiconductor layer, a plurality of holes, a first p-electrode, a second p-electrode and an n-electrode. The n-side semiconductor layer has a hexagonal shape in plan view. The p-side semiconductor layer has a hexagonal shape in plan view and provided over the n-side semiconductor layer. The holes are arranged in the p-side semiconductor layer so that the n-side semiconductor layer is exposed through the plurality of holes. The first p-electrode is in contact with the p-side semiconductor layer. The second p-electrode is arranged on the first p-electrode adjacent to a corner corresponding to one of vertices of the hexagonal shape. The second p-electrode has sides that are respectively parallel to sides defining the corner in plan view. The n-electrode is arranged over the first p-electrode and is electrically connected to the n-side semiconductor layer through the plurality of holes.

Abstract: A light emitting element has first and second electrodes. In plan view, the first electrode has a first connecting portion configured to be bonded with a conductive wire, a first extending portion, and two second extending portions. The second electrode has a second connecting portion configured to be bonded with a conductive wire, and two third extending portions. The first extending portion extends linearly toward the second connecting portion, and the two second extending portions are arranged on two sides of the first extending portion. The second extending portions each has two bent portions and a linear portion extending parallel to the first extending portion and disposed between the two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the second extending portions. Each of the second extending portions extends beyond a position of the second connecting portion.

Abstract: A light emitting element has semiconductor layers and first and second electrodes disposed. In plan view, the first electrode has a first connecting portion, a first extending portion, and two second extending portions, and the second electrode has a second connecting portion and two third extending portions. The first extending portion of the first electrode extends linearly from the first connecting portion toward the second connecting portion, and the two second extending portions extend parallel to the first extending portion on two sides of the first extending portion. The second extending portions each has two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the second extending portion. With respect to an extending direction of the first extending portion, each of the second extending portions extends beyond a position of the second connecting portion.

Abstract: A light emitting element includes an n-pad electrode, a light-transmissive electrically conductive film on an upper surface of the p-side semiconductor layer, and a p-pad electrode on an upper surface of the light-transmissive electrically conductive film. When viewed from above, the semiconductor layered structure has a pentagonal outer peripheral shape having a first side, a second side adjacent to the first side at a right angle, a third side adjacent to the first side at a right angle, a fourth side adjacent to the second side at an obtuse angle, and a fifth side adjacent to the third side and the fourth side at an obtuse angle to the third side. The n-pad electrode is disposed near the first side, and the p-pad electrode is disposed closer to a first vertex where the fourth side and the fifth side meet, than the n-pad electrode is disposed to the first vertex.

Abstract: A light-emitting element includes: a semiconductor structure; light-reflecting electrodes; a first insulating film having: one or more first n-side openings and one or more first p-side openings; one or more interconnect electrodes on an upper surface of the first insulating film; a first electrode on the upper surface of the first insulating film; a second electrode on the upper surface of the first insulating film; a second insulating film having: one or more second n-side openings and one or more second p-side openings; a first external connection portion; and a second external connection portion.

Abstract: Provided are a light emitting element and a light emitting device with improved light emission intensity distribution. A light emitting element includes a light-transmissive substrate, an n-type semiconductor layer, a first p-type semiconductor layer, a first p-side electrode, a first n-side electrode, a second p-type semiconductor layer, a second p-side electrode, and a second n-side electrode. A light emitting device includes the light emitting element, and an external connection electrode provided at the light emitting element on a side opposite to the light-transmissive substrate. The external connection electrode includes an n-side external connection electrode connected to the first n-side electrode and the second n-side electrode, a first p-side external connection electrode connected to the first p-side electrode, and a second p-side external connection electrode connected to the second p-side electrode.

Abstract: A light emitting device includes a light emitting element and a mounting substrate on which the light emitting element is mounted such that the mounting substrate faces an upper side of the light emitting element. The light emitting element includes a substrate, first and second light emitting cells each including a semiconductor layered structure that includes an n-side semiconductor layer and a p-side semiconductor layer in order from a substrate side, a first insulating layer, wiring electrodes, and a second insulating layer. One of the wiring electrodes is electrically connected to the n-side semiconductor layer of the first light emitting cell and to the p-side semiconductor layer of the second light emitting cell. The mounting substrate includes wiring terminals, one of which is electrically connected to the n-side semiconductor layer of the first light emitting cell and to the p-side semiconductor layer of the second light emitting cell.

Abstract: Provided are a light emitting element and a light emitting device with improved light emission intensity distribution. A light emitting element includes a light-transmissive substrate, an n-type semiconductor layer, a first p-type semiconductor layer, a first p-side electrode, a first n-side electrode, a second p-type semiconductor layer, a second p-side electrode, and a second n-side electrode. A light emitting device includes the light emitting element, and an external connection electrode provided at the light emitting element on a side opposite to the light-transmissive substrate. The external connection electrode includes an n-side external connection electrode connected to the first n-side electrode and the second n-side electrode, a first p-side external connection electrode connected to the first p-side electrode, and a second p-side external connection electrode connected to the second p-side electrode.

Abstract: A light-emitting element includes: a semiconductor structure; light-reflecting electrodes; a first insulating film having: one or more first n-side openings and one or more first p-side openings; one or more interconnect electrodes on an upper surface of the first insulating film; a first electrode on the upper surface of the first insulating film; a second electrode on the upper surface of the first insulating film; a second insulating film having: one or more second n-side openings and one or more second p-side openings; a first external connection portion; and a second external connection portion.

Abstract: A light emitting element has semiconductor layers and first and second electrodes disposed. In plan view, the first electrode has a first connecting portion, a first extending portion, and two second extending portions, and the second electrode has a second connecting portion and two third extending portions. The first extending portion of the first electrode extends linearly from the first connecting portion toward the second connecting portion, and the two second extending portions extend parallel to the first extending portion on two sides of the first extending portion. The second extending portions each has two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the second extending portion. With respect to an extending direction of the first extending portion, each of the second extending portions extends beyond a position of the second connecting portion.

Abstract: A light emitting element includes a substrate; a plurality of semiconductor light emitting cells; a plurality of light reflective electrodes; a first insulation layer that continuously covers lateral surfaces of the semiconductor light emitting cells, spaces between the semiconductor light emitting cells, lateral surfaces of the light reflective electrodes, and a portion of upper surfaces of the light reflective electrodes; a plurality of wiring electrodes, and cover the lateral surfaces of the semiconductor light emitting cells and the spaces between the semiconductor light emitting cells via the first insulation layer; and a light reflective metal layer that covers the lateral surfaces of at least two adjacent ones of the semiconductor light emitting cells and the space between said at least two semiconductor light emitting cells, via the first insulation layer.

Abstract: A light emitting element has: first and second conductivity type semiconductor layers, first and second electrodes disposed on the same face side of the first and second conductivity type semiconductor layers, respectively. In plan view, the first electrode has a first connecting portion, a first extending portion, and two second extending portions, and the second electrode has a second connecting portion and two third extending portions. The first extending portion of the first electrode extends linearly from the first connecting portion toward the second connecting portion, and the two second extending portions extend parallel to the first extending portion on two sides of the first extending portion. The second extending portions each has two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the two second extending portions.