Abstract: A light emitting element includes an n-side semiconductor layer, a p-side semiconductor layer, a plurality of holes, a first p-electrode, a second p-electrode and an n-electrode. The n-side semiconductor layer has a hexagonal shape in plan view. The p-side semiconductor layer has a hexagonal shape in plan view and provided over the n-side semiconductor layer. The holes are arranged in the p-side semiconductor layer so that the n-side semiconductor layer is exposed through the plurality of holes. The first p-electrode is in contact with the p-side semiconductor layer. The second p-electrode is arranged on the first p-electrode adjacent to a corner corresponding to one of vertices of the hexagonal shape. The second p-electrode has sides that are respectively parallel to sides defining the corner in plan view. The n-electrode is arranged over the first p-electrode and is electrically connected to the n-side semiconductor layer through the plurality of holes.

Abstract: A light emitting element with a hexagonal planar shape, has: an n-side semiconductor layer; a p-side semiconductor layer provided on the n-side semiconductor layer; a plurality of holes that are provided to an area excluding three corners at mutually diagonal positions of the p-side semiconductor layer in plan view, and expose the n-side semiconductor layer; a first p-electrode provided in contact with the p-side semiconductor layer; second p-electrodes provided to three corners on the first p-electrode; and an n-electrode that is provided on the first p-electrode and is electrically connected to the n-side semiconductor layer through the plurality of holes.

Abstract: A light-emitting element includes a light transmissive substrate; a first semiconductor stacked body including: a first n-side semiconductor layer, and a first p-side semiconductor layer, the first p-side semiconductor layer having a hole formed therein; a first p-electrode; a first n-electrode having a portion above the first p-electrode, and a portion extending into the hole, the first n-electrode being electrically connected to the first n-side semiconductor layer through the hole; a second semiconductor stacked body including: a second n-side semiconductor layer located around a periphery of the first semiconductor stacked body, and a second p-side semiconductor layer located above the second n-side semiconductor layer and located outside of an inner edge portion of the second n-side semiconductor layer; a second p-electrode; and a second n-electrode having a portion above the second p-electrode, and being electrically connected to the inner edge portion of the second n-side semiconductor layer.

Abstract: A light-emitting element includes a semiconductor stacked body, a light transmissive conductive film disposed on the semiconductor stacked body, the light transmissive conductive film including a plurality of through holes, insulation films disposed in the plurality of through holes, the plurality of through holes being disposed on the semiconductor stacked body; and a pad electrode disposed on the light transmissive conductive film and the insulation films.

Abstract: A light emitting element includes a substrate; a plurality of semiconductor light emitting cells; a plurality of light reflective electrodes; a first insulation layer that continuously covers lateral surfaces of the semiconductor light emitting cells, spaces between the semiconductor light emitting cells, lateral surfaces of the light reflective electrodes, and a portion of upper surfaces of the light reflective electrodes; a plurality of wiring electrodes, and cover the lateral surfaces of the semiconductor light emitting cells and the spaces between the semiconductor light emitting cells via the first insulation layer; and a light reflective metal layer that covers the lateral surfaces of at least two adjacent ones of the semiconductor light emitting cells and the space between said at least two semiconductor light emitting cells, via the first insulation layer.

Abstract: A light emitting element has: first and second conductivity type semiconductor layers, first and second electrodes disposed on the same face side of the first and second conductivity type semiconductor layers, respectively. In plan view, the first electrode has a first connecting portion, a first extending portion, and two second extending portions, and the second electrode has a second connecting portion and two third extending portions. The first extending portion of the first electrode extends linearly from the first connecting portion toward the second connecting portion, and the two second extending portions extend parallel to the first extending portion on two sides of the first extending portion. The second extending portions each has two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the two second extending portions.

Abstract: A method of manufacturing a semiconductor light emitting element includes providing a semiconductor stacked layer body; forming an insulating layer on a portion of the semiconductor stacked layer body; forming a light-transmissive electrode covering an upper surface of the semiconductor stacked layer body and an upper surface of the insulating layer, and on a region at least partially overlapping a region for disposing an extending portion in a plan view; forming a light reflecting layer in each of the openings of the light-transmissive electrode; forming a protective layer on a main surface side of the semiconductor stacked layer body; forming a mask on an upper surface of the protective layer except for the region for forming the pad electrode; etching the protective layer to form an opening in the protective layer; and forming a pad electrode in the opening of the protective layer.

Abstract: A light-emitting element includes a light transmissive substrate; a first semiconductor stacked body including: a first n-side semiconductor layer, and a first p-side semiconductor layer, the first p-side semiconductor layer having a hole formed therein; a first p-electrode; a first n-electrode having a portion above the first p-electrode, and a portion extending into the hole, the first n-electrode being electrically connected to the first n-side semiconductor layer through the hole; a second semiconductor stacked body including: a second n-side semiconductor layer located around a periphery of the first semiconductor stacked body, and a second p-side semiconductor layer located above the second n-side semiconductor layer and located outside of an inner edge portion of the second n-side semiconductor layer; a second p-electrode; and a second n-electrode having a portion above the second p-electrode, and being electrically connected to the inner edge portion of the second n-side semiconductor layer.

Abstract: A light emitting element having; a first and a second conductivity type semiconductor layers, a first and a second electrodes formed on the first and second conductivity type semiconductor layer, the first and the second electrodes being disposed on the same face side of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, in plan view, the first electrode having a first connecting portion, a first extending portion, and two second extending portions, the second electrode having a second connecting portion and two third extending portions, the first extending portion of the first electrode extending linearly from the first connecting portion toward the second connecting portion, and the two second extending portions extending parallel to the first extending portion on two sides of the first extending portion, the two third extending portions of the second electrode extending parallel to the first extending portion between the first extending portion and the two

Abstract: A light emitting element with a hexagonal planar shape, has: an n-side semiconductor layer; a p-side semiconductor layer provided on the n-side semiconductor layer; a plurality of holes that are provided to an area excluding three corners at mutually diagonal positions of the p-side semiconductor layer in plan view, and expose the n-side semiconductor layer; a first p-electrode provided in contact with the p-side semiconductor layer; second p-electrodes provided to three corners on the first p-electrode; and an n-electrode that is provided on the first p-electrode and is electrically connected to the n-side semiconductor layer through the plurality of holes.

Abstract: Provided are a light emitting element and a light emitting device with improved light emission intensity distribution. A light emitting element includes a light-transmissive substrate, an n-type semiconductor layer, a first p-type semiconductor layer, a first p-side electrode, a first n-side electrode, a second p-type semiconductor layer, a second p-side electrode, and a second n-side electrode. A light emitting device includes the light emitting element, and an external connection electrode provided at the light emitting element on a side opposite to the light-transmissive substrate. The external connection electrode includes an n-side external connection electrode connected to the first n-side electrode and the second n-side electrode, a first p-side external connection electrode connected to the first p-side electrode, and a second p-side external connection electrode connected to the second p-side electrode.

Abstract: The present disclosure relates to a semiconductor light emitting element. The semiconductor light emitting element has a first conductivity type layer, a light emitting layer, and a second conductivity type layer that are laminated; a first pad electrode provided to the first conductivity type layer; and second pad electrodes provided to the second conductivity type layer. The first pad electrode and the second pad electrode is disposed on the same side of the semiconductor light emitting element. Plan view shape of the semiconductor light emitting element is rectangular. The first pad electrode is disposed in a middle region of three regions of the semiconductor light emitting element. The three regions are defined by dividing the light emitting element into three equal parts in the lengthwise direction of the semiconductor light emitting element. The second pad electrodes are respectively disposed in regions on both sides of the three regions.

Abstract: A light emitting element includes a semiconductor layer which is in a planar shape of a polygon at least of a pentagon, a second electrode provided on the semiconductor layer, and a first electrode provided on the semiconductor layer and having a first pad portion, a first extension portion that extends from the first pad portion along an imaginary circle to which the first pad portion is tangent on the inside and whose center is at the same location as center of gravity of the polygon shape, and a second extension portion that extends along the imaginary circle from the first pad portion on the opposite side from the first extension portion.

Abstract: A method of manufacturing a semiconductor light emitting element includes providing a semiconductor stacked layer body; forming an insulating layer on a portion of the semiconductor stacked layer body; forming a light-transmissive electrode covering an upper surface of the semiconductor stacked layer body and an upper surface of the insulating layer, and on a region at least partially overlapping a region for disposing an extending portion in a plan view; forming a light reflecting layer in each of the openings of the light-transmissive electrode; forming a protective layer on a main surface side of the semiconductor stacked layer body; forming a mask on an upper surface of the protective layer except for the region for forming the pad electrode; etching the protective layer to form an opening in the protective layer; and forming a pad electrode in the opening of the protective layer.

Abstract: A light-emitting element includes a semiconductor stacked body, a light transmissive conductive film disposed on the semiconductor stacked body, the light transmissive conductive film including a plurality of through holes, insulation films disposed in the plurality of through holes, the plurality of through holes being disposed on the semiconductor stacked body; and a pad electrode disposed on the light transmissive conductive film and the insulation films.

Abstract: A method of manufacturing a semiconductor light emitting element includes providing a semiconductor stacked layer body; forming an insulating layer on a portion of the semiconductor stacked layer body; forming a light-transmissive electrode covering an upper surface of the semiconductor stacked layer body and an upper surface of the insulating layer, and on a region at least partially overlapping a region for disposing an extending portion in a plan view; forming a light reflecting layer in each of the openings of the light-transmissive electrode; forming a protective layer on a main surface side of the semiconductor stacked layer body; forming a mask on an upper surface of the protective layer except for the region for forming the pad electrode; etching the protective layer to form an opening in the protective layer; and forming a pad electrode in the opening of the protective layer.

Abstract: A method of manufacturing a semiconductor light emitting element includes providing a semiconductor stacked layer body; forming an insulating layer on a portion of the semiconductor stacked layer body; forming a light-transmissive electrode covering an upper surface of the semiconductor stacked layer body and an upper surface of the insulating layer, and on a region at least partially overlapping a region for disposing an extending portion in a plan view; forming a light reflecting layer in each of the openings of the light-transmissive electrode; forming a protective layer on a main surface side of the semiconductor stacked layer body; forming a mask on an upper surface of the protective layer except for the region for forming the pad electrode; etching the protective layer to form an opening in the protective layer; and forming a pad electrode in the opening of the protective layer.

Abstract: The present disclosure relates to a semiconductor light emitting element. The semiconductor light emitting element has a first conductivity type layer, a light emitting layer, and a second conductivity type layer that are laminated; a first pad electrode provided to the first conductivity type layer; and second pad electrodes provided to the second conductivity type layer. The first pad electrode and the second pad electrode is disposed on the same side of the semiconductor light emitting element. Plan view shape of the semiconductor light emitting element is rectangular. The first pad electrode is disposed in a middle region of three regions of the semiconductor light emitting element. The three regions are defined by dividing the light emitting element into three equal parts in the lengthwise direction of the semiconductor light emitting element. The second pad electrodes are respectively disposed in regions on both sides of the three regions.

Abstract: A light emitting element having; a first and a second conductivity type semiconductor layers, a first and a second electrodes formed on the first and second conductivity type semiconductor layer, the first and the second electrodes being disposed on the same face side of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, in plan view, the first electrode having a first connecting portion, a first extending portion, and two second extending portions, the second electrode having a second connecting portion and two third extending portions, the first extending portion of the first electrode extending linearly from the first connecting portion toward the second connecting portion, and the two second extending portions extending parallel to the first extending portion on two sides of the first extending portion, the two third extending portions of the second electrode extending parallel to the first extending portion between the first extending portion and the two

Abstract: A semiconductor light emitting element includes: an insulating substrate having a plurality of convex portions on a surface thereof; a plurality of light emitting element components having semiconductor laminated bodies that are laminated on the insulating substrate and are separated from one another by a groove that exposes the convex portions; and a connector connecting between the light emitting element components. The light emitting element components include a first light emitting element component and a second light emitting element component. The first light emitting element component is separated from the second light emitting element component with the groove in between, and has a first protrusion that protrudes toward the second light emitting element component. The connector includes a first connector having a shape that straddles the groove and that follows the convex portions, and has a straight section.