Abstract: A heat sink includes a plurality of extrusions each including a base and a fin, the plurality of extrusions being aligned in a width direction orthogonal to an extrusion direction and joined to each other. The plurality of extrusions include a first extrusion including a plurality of fins, the first extrusion including, in the base, a through-hole in which a heat pipe is mountable, the through-hole extending in the extrusion direction.

Abstract: A boiling cooler includes a boiling part, a condensing part arranged in a substantially horizontal direction with respect to the boiling part, and a connecting pipe that connects the boiling part to the condensing part. The condensing part includes a plurality of stages of refrigerant passages, a first external passage provided between the refrigerant passages, and a second external passage provided on an outer surface of at least one of an uppermost refrigerant passage and a lowermost refrigerant passage.

Abstract: A cooling device includes a main body unit that has, on a surface thereof, a plurality of disposition regions where objects to be cooled are disposed, and a refrigerant flow passage provided in the main body unit. The refrigerant flow passage includes a first flow passage portion and a second flow passage portion. The first flow passage portion is formed at a predetermined position of overlapping a part of an inside of a predetermined disposition region to allow a refrigerant to pass therethrough more intensively than the second flow passage portion.

Abstract: A boiling cooler includes a boiling part, a condensing part arranged in a substantially horizontal direction with respect to the boiling part, and a connecting pipe that connects the boiling part to the condensing part. The condensing part includes a plurality of stages of refrigerant passages, a first external passage provided between the refrigerant passages, and a second external passage provided on an outer surface of at least one of an uppermost refrigerant passage and a lowermost refrigerant passage.

Abstract: A heat sink includes a plurality of extrusions each including a base and a fin, the plurality of extrusions being aligned in a width direction orthogonal to an extrusion direction and joined to each other. The plurality of extrusions include a first extrusion including a plurality of fins, the first extrusion including, in the base, a through-hole in which a heat pipe is mountable, the through-hole extending in the extrusion direction.

Abstract: A cooling device includes a main body unit that has, on a surface thereof, a plurality of disposition regions where objects to be cooled are disposed, and a refrigerant flow passage provided in the main body unit. The refrigerant flow passage includes a first flow passage portion and a second flow passage portion. The first flow passage portion is formed at a predetermined position of overlapping a part of an inside of a predetermined disposition region to allow a refrigerant to pass therethrough more intensively than the second flow passage portion.

Abstract: A heat sink which is mounted in a movable body and which is to be exposed to a traveling air stream generated while the movable body moves includes a base and a heat dissipating portion having a plurality of fins. At least in a front end portion of the heat dissipating portion, the heat dissipating portion includes a rectifying portion provided so as to extend across a predetermined area in a longitudinal direction in front portions of slit-shaped flow paths at an upstanding end (i.e., an end apart from the base).

Abstract: A semiconductor wafer 10 has a plurality of semiconductor chip areas 10a and a scribe area 10b, each of the semiconductor chip areas 10a having semiconductor elements and electrode pads (electrode portions) 16a electrically connected to the respective semiconductor elements, the scribe area 10b having monitor elements and electrode pads (electrode portions) 16b electrically connected to the monitor elements, wherein projecting electrodes 18 are selectively formed only on the respective electrode pads 16a in the semiconductor chip areas 10a by electroless plating. Thus, for example, the electrode pads 16b are covered with an insulating film 14.

Abstract: A heat sink which is mounted in a movable body and which is to be exposed to a traveling air stream generated while the movable body moves includes a base and a heat dissipating portion having a plurality of fins. At least in a front end portion of the heat dissipating portion, the heat dissipating portion includes a rectifying portion provided so as to extend across a predetermined area in a longitudinal direction in front portions of slit-shaped flow paths at an upstanding end (i.e., an end apart from the base).

Abstract: A semiconductor wafer 10 has a plurality of semiconductor chip areas 10a and a scribe area 10b, each of the semiconductor chip areas 10a having semiconductor elements and electrode pads (electrode portions) 16a electrically connected to the respective semiconductor elements, the scribe area 10b having monitor elements and electrode pads (electrode portions) 16b electrically connected to the monitor elements, wherein projecting electrodes 18 are selectively formed only on the respective electrode pads 16a in the semiconductor chip areas 10a by electroless plating. Thus, for example, the electrode pads 16b are covered with an insulating film 14.

Abstract: A semiconductor device includes: an electrode pad formed in a chip region on a substrate; and a protruding portion continuously formed in a region outside the electrode pad within the chip region so as to surround a region inside the chip region. The protruding portion is higher than the electrode pad.

Abstract: An organic protective film 23? is formed on the periphery of a chip region 12 on a substrate 11 so as to continuously surround the internal part of the chip region 12. A passivation film 22 and an organic protective film 23 form a closed-loop opening on a cap layer 47.

Abstract: A semiconductor wafer 10 has a plurality of semiconductor chip areas 10a and a scribe area 10b, each of the semiconductor chip areas 10a having semiconductor elements and electrode pads (electrode portions) 16a electrically connected to the respective semiconductor elements, the scribe area 10b having monitor elements and electrode pads (electrode portions) 16b electrically connected to the monitor elements, wherein projecting electrodes 18 are selectively formed only on the respective electrode pads 16a in the semiconductor chip areas 10a by electroless plating. Thus, for example, the electrode pads 16b are covered with an insulating film 14.

Abstract: A semiconductor device in accordance with the present invention includes IC chips (semiconductor elements) (2, 3, 4) having solder bumps (24) (projecting electrodes) formed on electrode pads, and a first wiring board (1) having connection terminals (7) to which the respective solder bumps (24) of the IC chips (2, 3, 4) are connected, external connection terminals (8) for connection to an external apparatus, and conductor wires (9) provided in respective groove portions formed in a board surface and connected to the respective connection terminals (7). In spite of the reduced pitch of the conductor wires (9), the presence of the groove portions enables an increase in cross section, allowing a reduction in wiring resistance.

Abstract: A semiconductor wafer 10 has a plurality of semiconductor chip areas 10a and a scribe area 10b, each of the semiconductor chip areas 10a having semiconductor elements and electrode pads (electrode portions) 16a electrically connected to the respective semiconductor elements, the scribe area 10b having monitor elements and electrode pads (electrode portions) 16b electrically connected to the monitor elements, wherein projecting electrodes 18 are selectively formed only on the respective electrode pads 16a in the semiconductor chip areas 10a by electroless plating. Thus, for example, the electrode pads 16b are covered with an insulating film 14.

Abstract: A semiconductor device in accordance with the present invention includes IC chips (semiconductor elements) (2, 3, 4) having solder bumps (24) (projecting electrodes) formed on electrode pads, and a first wiring board (1) having connection terminals (7) to which the respective solder bumps (24) of the IC chips (2, 3, 4) are connected, external connection terminals (8) for connection to an external apparatus, and conductor wires (9) provided in respective groove portions formed in a board surface and connected to the respective connection terminals (7). In spite of the reduced pitch of the conductor wires (9), the presence of the groove portions enables an increase in cross section, allowing a reduction in wiring resistance.

Abstract: A semiconductor device has a semiconductor chip, a first insulating film and an inductor. The semiconductor chip includes an integrated circuit formed on the main surface of the chip and a plurality of pad electrodes formed on the main surface of the chip and electrically connected to the integrated circuit. The first insulating film of an insulating resin material is formed on the main surface of the semiconductor chip, covers the integrated circuit, and includes a plurality of contact holes provided on the respective pad electrodes. The inductor is formed on the inductor formation region of the first insulating film, and both terminals of the inductor are connected to the pad electrodes through the contact holes, respectively. The inductor formation region of the first insulating film is formed thicker than a portion of the first insulating film around the contact hole.

Abstract: The semiconductor device includes a semiconductor element having an electrode formed on a surface thereof, and a metal wiring formed on the surface of the semiconductor element and electrically connected to the electrode. The metal wiring has an external electrode portion functioning as an external electrode. A thickness of the external electrode portion is greater than that of a non-electrode portion of the metal wiring, i.e., a portion of the metal wiring other than the external electrode portion.

Abstract: A semiconductor device has a semiconductor chip, a first insulating film and an inductor. The semiconductor chip includes an integrated circuit formed on the main surface of the chip and a plurality of pad electrodes formed on the main surface of the chip and electrically connected to the integrated circuit. The first insulating film of an insulating resin material is formed on the main surface of the semiconductor chip, covers the integrated circuit, and includes a plurality of contact holes provided on the respective pad electrodes. The inductor is formed on the inductor formation region of the first insulating film, and both terminals of the inductor are connected to the pad electrodes through the contact holes, respectively. The inductor formation region of the first insulating film is formed thicker than a portion of the first insulating film around the contact hole.

Abstract: With an Al—Cu bonded structure, an Ag layer can be remained at the Al—Cu bonding interlayer providing ductile deformation behavior and a tensile strength at the bonded interlayer similar to that of the Al base material. This results in superior bonding characteristics. Furthermore, a thin Al—Cu bonded structure can be obtained as a result of using the Al—Cu dissimilar material bonded section, which has superior workability, as the base material to perform rolling for wall-thickness reduction. The thin Al—Cu structure has superior dimensional accuracy and can meet diverse dimensional demands. The structure combines the light weight of Al with its particular heat transfer and heat dissipative characteristics and anti-corrosive properties of Cu, allowing it to meet the compact, thin, light-weight, and high-performance needs of electronic devices. The structure can be widely used in heat exchanges and heat transfer devices.