Abstract: A semiconductor device has a semiconductor chip, a first insulating film and an inductor. The semiconductor chip includes an integrated circuit formed on the main surface of the chip and a plurality of pad electrodes formed on the main surface of the chip and electrically connected to the integrated circuit. The first insulating film of an insulating resin material is formed on the main surface of the semiconductor chip, covers the integrated circuit, and includes a plurality of contact holes provided on the respective pad electrodes. The inductor is formed on the inductor formation region of the first insulating film, and both terminals of the inductor are connected to the pad electrodes through the contact holes, respectively. The inductor formation region of the first insulating film is formed thicker than a portion of the first insulating film around the contact hole.

Abstract: With an Al—Cu bonded structure, an Ag layer can be remained at the Al—Cu bonding interlayer, providing ductile deformation behavior and a tensile strength at the bonded interlayer similar to that of the Al base material. This results in superior bonding characteristics. Furthermore, a thin Al—Cu bonded structure can be obtained as a result of using the Al—Cu dissimilar material bonded section, which has superior workability, as the base material to perform rolling for wall-thickness reduction. The thin Al—Cu structure has superior dimensional accuracy and can meet diverse dimensional demands. The structure combines the light weight of Al with its particular heat transfer and heat dissipative characteristics and anti-corrosive properties of Cu, allowing it to meet the compact, thin, light-weight, and high-performance needs of electronic devices. The structure can be widely used in heat exchangers and heat transfer devices.

Abstract: The semiconductor device includes a semiconductor element having an electrode formed on a surface thereof, and a metal wiring formed on the surface of the semiconductor element and electrically connected to the electrode. The metal wiring has an external electrode portion functioning as an external electrode. A thickness of the external electrode portion is greater than that of a non-electrode portion of the metal wiring, i.e., a portion of the metal wiring other than the external electrode portion.

Abstract: The semiconductor device includes a semiconductor element having an electrode formed on a surface thereof, and a metal wiring formed on the surface of the semiconductor element and electrically connected to the electrode. The metal wiring has an external electrode portion functioning as an external electrode. A thickness of the external electrode portion is greater than that of a non-electrode portion of the metal wiring, i.e., a portion of the metal wiring other than the external electrode portion.

Abstract: A semiconductor device has a semiconductor chip, a first insulating film and an inductor. The semiconductor chip includes an integrated circuit formed on the main surface of the chip and a plurality of pad electrodes formed on the main surface of the chip and electrically connected to the integrated circuit. The first insulating film of an insulating resin material is formed on the main surface of the semiconductor chip, covers the integrated circuit, and includes a plurality of contact holes provided on the respective pad electrodes. The inductor is formed on the inductor formation region of the first insulating film, and both terminals of the inductor are connected to the pad electrodes through the contact holes, respectively. The inductor formation region of the first insulating film is formed thicker than a portion of the first insulating film around the contact hole.

Abstract: The semiconductor device includes a semiconductor element having an electrode formed on a surface thereof, and a metal wiring formed on the surface of the semiconductor element and electrically connected to the electrode. The metal wiring has an external electrode portion functioning as an external electrode. A thickness of the external electrode portion is greater than that of a non-electrode portion of the metal wiring, i.e., a portion of the metal wiring other than the external electrode portion.

Abstract: A galvannealed steel sheet having excellent powdering resistance during press forming and excellent chipping resistance in cold environments. The steel sheet has the following chemical composition, by weight, of C: up to 0.01%, Si: 0.03 to 0.3%, Mn: 0.05 to 2%, P: 0.017 to 0.15%, Al: 0.005 to 0.1%, Ti: 0.005 to 0.1%, Nb: up to 0.1 %, B: up to 0.005%, balance: Fe and incidental impurities. The average grain size of the surface of the base metal of the galvannealed steel sheet is 12 .mu.m or less and the steel sheet is useful in the manufacture of automobiles.

Abstract: A heat sink fin assembly of the corrugated type for cooling an LSI package comprises a flat base plate and a heat dissipating member made of a thin metal sheet having convex and concave portions which are comprised of a repeated series of side wall portions, top portions, and bottom portions. The base plate and the heat dissipating member are integrated with each other by bonding.

Abstract: An immobilized metal complex is disclosed, which is immobilized on an inorganic carrier to which a long molecular chain compound capable of surrounding the metal complex is bound in an amount of at least 1.5 mols per mol of the metal complex. This novel immobilized metal complex has an excellent stability and can be used as a metal complex catalyst providing excellent reactivity.