Abstract: A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from ?1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 ??·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

Abstract: The present invention provides a camera calibration device and a camera calibration system with which it is possible to execute calibration even in a situation where the load-bearing state of a vehicle changes, and also to precisely estimate all of camera parameters and execute calibration without utilizing the parallelism of the vehicle to, e.g., a white line. The orientation of a vehicle is estimated on the basis of a prescribed feature amount extracted from a video, the translation-direction position of a camera relative to ground is corrected on the basis of information obtained from the calibration executed at a time in the past such as the time of product shipment, and a camera parameter pertaining to the orientation of the camera relative to ground is calculated on the basis of the orientation of the vehicle and the translation-direction position of the camera relative to ground.

Abstract: In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

Abstract: A camera calibration device that captures images of at least one marker with at least two cameras and calibrates installation states of the at least two cameras based upon the captured images by the at least two cameras, includes: an extracting unit that extracts a feature amount of the at least one marker based upon the captured images by the at least two cameras; a primary calibration unit that calculates a position of each of the at least two cameras in a marker coordinate system, based upon the feature amount; and a secondary calibration unit that preforms coordinate transformation of the position of each of the cameras in the marker coordinate system calculated by the primary calibration unit, into a position of each of the cameras in a vehicle coordinate system.

Abstract: Provided are a camera calibration device and a camera calibration system that can significantly reduce a burden on an operator associated with transport of calibration patterns or an operation of arranging calibration patterns in a calibration operation, and can significantly reduce the storage place for the calibration patterns.

Abstract: In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

Abstract: Disclosed is a production method of a lithium tetrafluoroborate solution for use as a lithium battery electrolytic solution, including: a reaction step of forming lithium tetrafluoroborate by reaction of lithium fluoride and boron trifluoride in a chain carbonate ester solvent and thereby obtaining a reaction solution of the lithium tetrafluoroborate dissolved in the chain carbonate ester solvent; a water removal step of adding a water removing agent to the reaction solution; an acidic impurity removal step of removing an acidic impurity component from the reaction solution by concentrating the reaction solution after the water removal step; and a dilution step of diluting the concentrated solution after the acidic impurity removal step. It is possible by this method to obtain the lithium tetrafluoroborate solution whose acidic impurity content and water content are reduced to be 50 mass ppm or lower and 15 mass ppm or lower, respectively.

Abstract: Disclosed is a method for forming lithium hexafluorophosphate by reacting together phosphorus trichloride, chlorine and lithium chloride in a nonaqueous organic solvent and then making the reaction product formed in the solvent react with hydrogen fluoride. This method is characterized by that a lithium hexafluorophosphate concentrated liquid is obtained by conducting a filtration after making the reaction product formed in the solvent react with hydrogen fluoride and then subjecting the filtrate to a concentration by degassing. By this method, it is possible to easily produce a high-purity, lithium hexafluorophosphate concentrated liquid at a low cost.

Abstract: An information processing apparatus includes a plurality of devices, each including a memory that stores link-status information indicating whether or not an error occurs in a link connected to the each device. When a first device among the plurality of devices fails to receive within a predetermined time period a response for a request that has been transmitted by the first device, the first device obtains the link-status information from relevant devices each related to at least one of transfer of the request and transfer of the response, and identifies a link in which the error has occurred or a device that is connected to the link, based on the obtained link-status information.

Abstract: A heat storage material composition having a melting temperature utilized for control of an optional management temperature, providing no variation in melting behavior and solidification behavior, and having a constant melting temperature. The heat storage material composition consists primarily of a mixture of a higher alkane having carbon number of 9 to 24 and a higher alcohol having carbon number of 6 to 20, and the mixture has a substantially single melting peak in DSC curve measured by a differential scanning calorimeter (DSC).

Abstract: The present invention provides a purified metal complex having oxalic acid as a ligand and a method for industrially producing a purified non-aqueous solvent solution of the metal complex at low cost. In the method of the present invention, oxalic acid contained in a non-aqueous solvent solution of a metal complex having oxalic acid as a ligand is decomposed by a reaction with a thionyl halide in a non-aqueous solvent, and the decomposition product of the reaction and the unreacted thionyl halide are removed by deaeration.

Abstract: One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

Abstract: To alleviate the strictness degree required for a relative positional relationship between a calibration index and a vehicle in an image calibration method and an image calibration device. The image calibration device includes a calibration index 20, four cameras 10, a distortion correction processing unit 30, a viewpoint transformation processing unit 40, and a calibration processing unit 50. The calibration index 20 includes two mutually parallel lines and a distance between which is known and one line orthogonal to the two lines. The cameras 10 take peripheral area images S1 to S4 of peripheral areas R1 to R4 including the calibration index 20. The distortion correction processing unit 30 corrects the peripheral area images S1 to S4 by using internal parameters M to obtain distortion-corrected images P1 to P4.

Abstract: An information recording apparatus has a stop mode in which only recording means comprised of a rotatable drum on which a recording head is mounted and recording medium driving means comprised of a capstan/pinch roller are stopped, which stop mode can be changed from a record temporary stop mode. During the stop mode of the recording means and the recording medium driving means, a video signal photo-taken by a camera of the information recording apparatus can be outputted externally, and, change to the stop mode is made effective by a combination of user's selection and/or presence/absence of an external connection device.

Abstract: According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

Abstract: One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

Abstract: In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

Abstract: In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

Abstract: There is provided a method for producing an electrolyte solution for lithium ion batteries, in which lithium hexafluorophosphate is used as an electrolyte, comprising the steps of (a) reacting phosphorus trichloride, chlorine and lithium chloride in a nonaqueous organic solvent; and (b) reacting a reaction product of the step (a) formed in the solvent, with hydrogen fluoride.

Abstract: It is an object to provide a method for packaging a target material with which a thin film that is less contaminated with an impurity in the air such as a compound containing a hydrogen atom can be formed. In addition, it is an object to provide a method for mounting a target with which a thin film that is less contaminated with an impurity can be formed. In order to achieve the objects, a target material in a target is not exposed to the air and kept sealed after being manufactured until a deposition apparatus on which the target is mounted is evacuated.