Abstract: The inorganic optical filter of the invention consists of a NdF3 single crystal. The optical element of the invention comprises a wavelength conversion element wherein incident light is subjected to wavelength conversion to twice the frequency by quasi-phase-matching using primary matching or tertiary matching, and emitted, and an inorganic optical filter situated in the optical path of light emitted from the wavelength conversion element, wherein the wavelength conversion element consists of a ferroelectric fluoride single crystal represented by Ba1?y(Mg1?xZnx)1+yF4 (where 0?x?1, and ?0.2?y?0.2), and the inorganic optical filter consists of a NdF3 single crystal.

Abstract: Disclosed is an adhesive composition which includes (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally includes (d) a filler and/or (e) a curing accelerator. Also disclosed are a process for producing an adhesive composition, including mixing (a) the epoxy resin and (b) the curing agent with (d) the filler, followed by mixing the resultant mixture with (c) the polymer compound incompatible with the epoxy resin; an adhesive film including the above-mentioned adhesive composition formed into a film; a substrate for mounting a semiconductor including a wiring board and the above-mentioned adhesive film disposed thereon on its side where chips are to be mounted; and a semiconductor device which includes the above-mentioned adhesive film or the substrate for mounting a semiconductor.

Abstract: The inorganic optical filter of the invention consists of a NdF3 single crystal. The optical element of the invention comprises a wavelength conversion element wherein incident light is subjected to wavelength conversion to twice the frequency by quasi-phase-matching using primary matching or tertiary matching, and emitted, and an inorganic optical filter situated in the optical path of light emitted from the wavelength conversion element, wherein the wavelength conversion element consists of a ferroelectric fluoride single crystal represented by Ba1?y(Mg1?xZnx)1+yF4 (where 0?x?1, and ?0.2?y?0.2), and the inorganic optical filter consists of a NdF3 single crystal.

Abstract: Disclosed is an adhesive composition which includes (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally includes (d) a filler and/or (e) a curing accelerator. Also disclosed are a process for producing an adhesive composition, including mixing (a) the epoxy resin and (b) the curing agent with (d) the filler, followed by mixing the resultant mixture with (c) the polymer compound incompatible with the epoxy resin; an adhesive film including the above-mentioned adhesive composition formed into a film; a substrate for mounting a semiconductor including a wiring board and the above-mentioned adhesive film disposed thereon on its side where chips are to be mounted; and a semiconductor device which includes the above-mentioned adhesive film or the substrate for mounting a semiconductor.

Abstract: Disclosed is an adhesive composition which includes (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally includes (d) a filler and/or (e) a curing accelerator. Also disclosed are a process for producing an adhesive composition, including mixing (a) the epoxy resin and (b) the curing agent with (d) the filler, followed by mixing the resultant mixture with (c) the polymer compound incompatible with the epoxy resin; an adhesive film including the above-mentioned adhesive composition formed into a film; a substrate for mounting a semiconductor including a wiring board and the above-mentioned adhesive film disposed thereon on its side where chips are to be mounted; and a semiconductor device which includes the above-mentioned adhesive film or the substrate for mounting a semiconductor.

Abstract: Disclosed is an adhesive composition which includes (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally includes (d) a filler and/or (e) a curing accelerator. Also disclosed are a process for producing an adhesive composition, including mixing (a) the epoxy resin and (b) the curing agent with (d) the filler, followed by mixing the resultant mixture with (c) the polymer compound incompatible with the epoxy resin; an adhesive film including the above-mentioned adhesive composition formed into a film; a substrate for mounting a semiconductor including a wiring board and the above-mentioned adhesive film disposed thereon on its side where chips are to be mounted; and a semiconductor device which includes the above-mentioned adhesive film or the substrate for mounting a semiconductor.

Abstract: Disclosed is an adhesive composition which includes (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally includes (d) a filler and/or (e) a curing accelerator. Also disclosed are a process for producing an adhesive composition, including mixing (a) the epoxy resin and (b) the curing agent with (d) the filler, followed by mixing the resultant mixture with (c) the polymer compound incompatible with the epoxy resin; an adhesive film including the above-mentioned adhesive composition formed into a film; a substrate for mounting a semiconductor including a wiring board and the above-mentioned adhesive film disposed thereon on its side where chips are to be mounted; and a semiconductor device which includes the above-mentioned adhesive film or the substrate for mounting a semiconductor.

Abstract: Disclosed is an adhesive composition which includes (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally includes (d) a filler and/or (e) a curing accelerator. Also disclosed are a process for producing an adhesive composition, including mixing (a) the epoxy resin and (b) the curing agent with (d) the filler, followed by mixing the resultant mixture with (c) the polymer compound incompatible with the epoxy resin; an adhesive film including the above-mentioned adhesive composition formed into a film; a substrate for mounting a semiconductor including a wiring board and the above-mentioned adhesive film disposed thereon on its side where chips are to be mounted; and a semiconductor device which includes the above-mentioned adhesive film or the substrate for mounting a semiconductor.

Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2 s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.

Abstract: A scintillator crystal represented by the following general formula (1). Ln(1-y)CeyX3:M??(1) wherein Ln(1-y)CeyX3 represents the chemical composition of the matrix material, Ln represents one or more elements selected from the group consisting of rare earth elements, X represents one or more elements selected from the group consisting of halogen elements, M is the constituent element of the dopant which is doped in the matrix material and represents one or more elements selected from the group consisting of Li, Na, K, Rb, Cs, Al, Zn, Ga, Be, Mg, Ca, Sr, Ba, Sc, Ge, Ti, V, Cu, Nb, Cr, Mn, Fe, Co, Ni, Mo, Ru, Rh, Pb, Ag, Cd, In, Sn, Sb, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl and Bi, and y represents a numerical value satisfying the condition represented by the following inequality (A): 0.0001?y?1??(A).

Abstract: The present invention provides an adhesive composition which comprises (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally comprises (d) a filler and/or (e) a curing accelerator; a process for producing an adhesive composition, comprising: mixing (a) the epoxy resin and (b) the curing agent with (d) the fillers followed by mixing the resultant mixture with (c) the polymer compound incompatible with the epoxy resin; an adhesive film comprising the above-mentioned adhesive composition formed into a film; a substrate for mounting semiconductor comprising a wiring board and the above-mentioned adhesive film disposed thereon on its side where chips are to be mounted; and a semiconductor device which comprises the above-mentioned adhesive film or the substrate for mounting semiconductor.

Abstract: The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which satisfies the condition specified by the following inequality (1A), wherein ALu represents the number of Lu atoms in the crystal and AGd represents the number of Gd atoms in the crystal. {ALu/(ALu+AGd)}<0.

Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2 s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.

Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.

Abstract: A scintillator crystal represented by the following general formula (1). Ln(1?y)CeyX3:M ??(1) wherein Ln(1?y)CeyX3 represents the chemical composition of the matrix material, Ln represents one or more elements selected from the group consisting of rare earth elements, X represents one or more elements selected from the group consisting of halogen elements, M is the constituent element of the dopant which is doped in the matrix material and represents one or more elements selected from the group consisting of Li, Na, K, Rb, Cs, Al, Zn, Ga, Be, Mg, Ca, Sr, Ba, Sc, Ge, Ti, V, Cu, Nb, Cr, Mn, Fe, Co, Ni, Mo, Ru, Rh, Pb, Ag, Cd, In, Sn, Sb, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl and Bi, and y represents a numerical value satisfying the condition represented by the following inequality (A): 0.0001?y?1.

Abstract: The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which satisfies the condition specified by the following inequality (1A), wherein ALu represents the number of Lu atoms in the crystal and AGd represents the number of Gd atoms in the crystal. {ALu/(ALu+AGd)}<0.

Abstract: The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which simultaneously satisfies the conditions specified by the following inequalities (1) and (2). {ALu/(ALu+AGd)}<0.50??(1) {ACe/(ALu+AGd)}?0.002??(2) wherein ALu represents the number of Lu atoms in the crystal, AGd represents the number of Gd atoms in the crystal, and ACe represents the number of Ce atoms in the crystal.

Abstract: The present invention provides an inorganic scintillator including a matrix material comprising a metal oxide, and a luminescence center made of Ce contained in the matrix material, the inorganic scintillator being adapted to scintillate in response to a radiation; wherein the matrix material further comprises a dopant having a tetravalent ionization energy I [kJ·mol?1] satisfying the condition represented by the following expression (1): 3000?I?3500.

Abstract: This invention provides an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising metal oxides including Lu, Gd, Ce and Si, which satisfies the condition specified by the following inequality (1A): 0.0025?{ACe/(ALu+AGd)}?0.025,??(1A) and which has an absorption coefficient of no greater than 0.500 cm?1 for light with a wavelength of 415 nm.

Abstract: The present invention provides an adhesive composition which comprises (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally comprises (d) a filler and/or (e) a curing accelerator; a process for producing an adhesive composition, comprising: mixing (a) the epoxy resin and (b) the curing agent with (d) the filler, followed by mixing the resultant mixture with (c) the polymer compound incompatible with the epoxy resin; an adhesive film comprising the above-mentioned adhesive composition formed into a film; a substrate for mounting semiconductor comprising a wiring board and the above-mentioned adhesive film disposed thereon on its side where chips are to be mounted; and a semiconductor device which comprises the above-mentioned adhesive film or the substrate for mounting semiconductor.