Abstract: A depth of interaction detector with uniform pulse-height comprises a multi-layer scintillator obtained by coupling at least two scintillator cells on a plane and then stacking the planar coupled scintillator cells, in layers, up to at least two stages and a light-receiving element connected to the bottom face of each scintillator cell of this multi-layer scintillator, wherein the detector is provided with a means for discriminating the position of a scintillator cell, which receives radiant rays and emits light rays and a means for making, uniform, the quantity of the light emitted from each scintillator cell and received by the light-receiving element.

Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.

Abstract: There are disclosed an adhesive composition comprising: (a) an epoxy resin, (b) a curing agent and (c) a polymer compound with a weight average molecular weight of 100,000 or more, wherein a ratio of A/B exceeds 1 and is 10 or less, where A represents the total weight of (a) the epoxy resin and (b) the curing agent and B represents a weight of (c) the polymer compound; an adhesive composition, whose compositions are separated into a sea phase and an island phase, when viewed at a section in a cured state, and a ratio X/Y is in a range of 0.1 to 1.0, where X is an area of the sea phase and Y is an area of the island phase; a process for producing said adhesive composition; an adhesive film wherein said adhesive composition is formed into a film form; an adhesive film for bonding a semiconductor chip and a wiring board for mounting a semiconductor or for bonding semiconductor chips themselves, wherein the adhesive film can perform bonding by heat-pressing with a pressure of 0.01 to 0.

Abstract: The present invention provides an adhesive composition which comprises (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally comprises (d) a filler and/or (e) a curing accelerator; a process for producing an adhesive composition, comprising: mixing (a) the epoxy resin and (b) the curing agent with (d) the filler, followed by mixing the resultant mixture with (c) the polymer compound incompatible with the epoxy resin; an adhesive film comprising the above-mentioned adhesive composition formed into a film; a substrate for mounting semiconductor comprising a wiring board and the above-mentioned adhesive film disposed thereon on its side where chips are to be mounted; and a semiconductor device which comprises the above-mentioned adhesive film or the substrate for mounting semiconductor.

Abstract: The present invention provides an adhesive composition which comprises (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally comprises (d) a filler and/or (e) a curing accelerator; a process for producing an adhesive composition, comprising: mixing (a) the epoxy resin and (b) the curing agent with (d) the filler, followed by mixing the resultant mixture with (c) the polymer compound incompatible with the epoxy resin; an adhesive film comprising the above-mentioned adhesive composition formed into a film; a substrate for mounting semiconductor comprising a wiring board and the above-mentioned adhesive film disposed thereon on its side where chips are to be mounted; and a semiconductor device which comprises the above-mentioned adhesive film or the substrate for mounting semiconductor.

Abstract: This invention provides an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising metal oxides including Lu, Gd, Ce and Si, which satisfies the condition specified by the following inequality (1A): 0.0025?{ACe/(ALu+AGd)}?0.025??(1A), and which has an absorption coefficient of no greater than 0.500 cm?1 for light with a wavelength of 415 nm.

Abstract: The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which satisfies the condition specified by the following inequality (1A), wherein ALu represents the number of Lu atoms in the crystal and AGd represents the number of Gd atoms in the crystal. {ALu/(ALu+AGd)}<0.

Abstract: The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which simultaneously satisfies the conditions specified by the following inequalities (1) and (2). {ALu/(ALu+AGd)}<0.50 ??(1) {ACe/(ALu+Gd)}?0.002 ??(2) wherein ALu represents the number of Lu atoms in the crystal, AGd represents the number of Gd atoms in the crystal, and ACe represents the number of Ce atoms in the crystal.

Abstract: The present invention provides an inorganic scintillator including a matrix material comprising a metal oxide, and a luminescence center made of Ce contained in the matrix material, the inorganic scintillator being adapted to scintillate in response to a radiation; wherein the matrix material further comprises a dopant having a tetravalent ionization energy I [kJ·mol?1] satisfying the condition represented by the following expression (1): 3000?I?3500 ??(1)

Abstract: A single crystal of a silicate of a rare earth element herein provided is characterized in that it has a Ce concentration of not less than 0.6 mole % and not more than 5 mole % and that it has a light transmittance, as determined at a wavelength of 450 nm, of not less than 75%. The single crystal permits the solution of the problems associated with the conventional techniques or the problems concerning the coloration of the resulting single crystal and the reduction of the light transmittance thereof, which are disadvantages observed when the Ce concentration of the single crystal is increased to reduce the fluorescence-attenuation time. The single crystal thus permits the high-speed diagnosis of PET devices.

Abstract: A depth of interaction detector with uniform pulse-height comprises a multi-layer scintillator obtained by coupling at least two scintillator cells on a plane and then stacking the planar coupled scintillator cells, in layers, up to at least two stages and a light-receiving element connected to the bottom face of each scintillator cell of this multi-layer scintillator, wherein the detector is provided with a means for discriminating the position of a scintillator cell, which receives radiant rays and emits light rays and a means for making, uniform, the quantity of the light emitted from each scintillator cell and received by the light-receiving element.

Abstract: An adhesive which comprises (1) 100 parts by weight of an epoxy resin and a hardener therefor, (2) 75 to 300 parts by weight of an epoxidized acrylic copolymer having a glycidyl (meth)acrylate unit content of 0.5 to 6 wt. %, a glass transition temperature of ?10° C. or higher and a weight average molecular weight of 100,000 or more and (3) 0.1 to 20 parts by weight of a latent curing accelerator; an adhesive member having a layer of the adhesive; an interconnecting substrate for semiconductor mounting having the adhesive member; and a semiconductor device containing the same.

Abstract: A single crystal of a silicate of a rare earth element herein provided is characterized in that it has a Ce concentration of not less than 0.6 mole % and not more than 5 mole % and that it has a light transmittance, as determined at a wavelength of 450 nm, of not less than 75%. The single crystal permits the solution of the problems associated with the conventional techniques or the problems concerning the coloration of the resulting single crystal and the reduction of the light transmittance thereof, which are disadvantages observed when the Ce concentration of the single crystal is increased to reduce the fluorescence-attenuation time. The single crystal thus permits the high-speed diagnosis of PET devices.

Abstract: An adhesive which comprises (1) 100 parts by weight of an epoxy resin and a hardener therefor, (2) 75 to 300 parts by weight of an epoxidized acrylic copolymer having a glycidyl (meth)acrylate unit content of 0.5 to 6 wt. %, a glass transition temperature of −10° C. or higher and a weight average molecular weight of 100,000 or more and (3) 0.1 to 20 parts by weight of a latent curing accelerator; an adhesive member having a layer of the adhesive; an interconnecting substrate for semiconductor mounting having the adhesive member; and a semiconductor device containing the same.

Abstract: There are disclosed an adhesive composition comprising: (a) an epoxy resin, (b) a curing agent and (c) a polymer compound with a weight average molecular weight of 100,000 or more, wherein a ratio of A/B exceeds 1 and is 10 or less, where A represents the total weight of (a) the epoxy resin and (b) the curing agent and B represents a weight of (c) the polymer compound; an adhesive composition, whose compositions are separated into a sea phase and an island phase, when viewed at a section in a cured state, and a ratio X/Y is in a range of 0.1 to 1.0, where X is an area of the sea phase and Y is an area of the island phase; a process for producing said adhesive composition; an adhesive film wherein said adhesive composition is formed into a film form; an adhesive film for bonding a semiconductor chip and a wiring board for mounting a semiconductor or for bonding semiconductor chips themselves, wherein the adhesive film can perform bonding by heat-pressing with a pressure of 0.01 to 0.

Abstract: A Ce-activated GSO single crystal is provided which comprises at least one member selected from the group consisting of Mg, Ta and Zr. The GSO single crystal possesses a faster fluorescence-attenuation time and a smaller output ratio and is colorless and highly transparent. Accordingly, the single crystal may suitably be used as a scintillator for PET.

Abstract: An adhesive which comprises (1) 100 parts by weight of an epoxy resin and a hardener therefor, (2) 75 to 300 parts by weight of an epoxidized acrylic copolymer having a glycidyl (meth)acrylate unit content of 0.5 to 6 wt. %, a glass transition temperature of −10° C. or higher and a weight average molecular weight of 100,000 or more and (3) 0.1 to 20 parts by weight of a latent curing accelerator; an adhesive member having a layer of the adhesive; an interconnecting substrate for semiconductor mounting having the adhesive member; and a semiconductor device containing the same.

Abstract: The present invention provides an adhesive composition which comprises (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally comprises (d) a filler and/or (e) a curing accelerator;

Abstract: An oxide superconductor of the formula: Bi.sub.1.0 Sr.sub.A Ca.sub.B Mg.sub.C Ba.sub.D Cu.sub.1.0.+-.0.15 O.sub.X wherein A=0.6-1.3, B=0.3-0.9, C=0.01-0.3 and D=0.01-0.3 in atomic ratio, having a 2212 phase with a critical temperature of making electrical resistance zero at about 80K or more, can be produced by firing preferably at 820.degree.-870.degree. C. in a lower oxygen content atmosphere.

Abstract: The present invention provides an oxide superconductor which is mainly composed of bismuth, lead, strontium, calcium, magnesium, and copper and has the composition represented by the formula:Bi.sub.1-A Pb.sub.A Sr.sub.1-B Mg.sub.B Ca.sub.1 Cu.sub.1.7.+-.0.3 Oxwherein A=0.15-0.35 and B=0.05-0.3 in which numerals represent atomic ratio and an oxide superconductor which is mainly composed of bismuth, lead, strontium, calcium, magnesium, barium and copper and has the composition represented by the formula:Bi.sub.1-A Pb.sub.A Sr.sub.1-(B+C) (Mg.sub.B Ba.sub.C)Ca.sub.1 Cu.sub.1.7.+-.0.3 Oxwherein A=0.15-0.35, B=0.05-0.3 and C=0.02-0.2 in which numerals represent atomic ratio. Methods for producing these superconductors are also provided.