Abstract: A connection structure of a superconducting layer according to an embodiment includes a first superconducting layer, a second superconducting layer, and a connection layer provided between the first superconducting layer and the second superconducting layer and including a first substance containing a rare earth element, barium, copper, and oxygen and a second substance containing a metal element, in which a first region per unit area at a first interface between the first superconducting layer and the connection layer is 1% or more and 50% or less where the second substance and the first superconducting layer are in contact with each other, and a second region per unit area at a second interface between the second superconducting layer and the connection layer is 1% or more and 50% or less where the second substance and the second superconducting layer are in contact with each other.

Abstract: A superconducting layer joint structure of embodiments includes: a first superconducting layer; a second superconducting layer; and a joint layer provided between the first superconducting layer and the second superconducting layer and containing a plurality of crystal particles containing a rare earth element (RE), barium (Ba), copper (Cu), and oxygen (O). The plurality of crystal particles includes at least one first particle. The at least one first particle has a first inner region and a first outer region. The first inner region is disposed inside the first superconducting layer. The first outer region is disposed outside the first superconducting layer.

Abstract: A connection structure of a superconducting layer of an embodiment incudes a first superconducting member including a first superconducting layer, and extends in a first direction, a second superconducting member including a second superconducting layer facing the first superconducting layer, and extends in the first direction, the second superconducting member having a first region, a second region, and a third region which is separated in the second direction from the second region, and a connection layer that contains a rare earth element (RE), barium (Ba), copper (Cu), and oxygen (O), and connects the first superconducting layer and the second superconducting layer. The first superconducting layer is present in a third direction between the second region and the third region, the third direction being perpendicular to the first direction and perpendicular to the second direction.

Abstract: A connection structure for a superconducting layer according to an embodiment includes a first superconducting layer, a second superconducting layer, and a connection layer between the first superconducting layer and the second superconducting layer, the connection layer including crystal particles containing a rare earth element, barium, copper, and oxygen, the crystal particles having a major diameter distribution including a trimodal distribution. The trimodal distribution has first, second, and third distributions in which major diameter become small in this order. The aspect ratios of the crystal particles included in the first distribution and the second distribution include a bimodal distribution. The median value of the major diameters of the crystal particles included in the distribution on a higher aspect ratio side in the bimodal distribution is greater than the median value of the major diameters of the crystal particles included in the distribution on a lower aspect ratio side.

Abstract: A connection structure of a superconducting layer according to an embodiment includes a first superconducting layer, a second superconducting layer, and a connection layer provided between the first superconducting layer and the second superconducting layer and including a first substance containing a rare earth element, barium, copper, and oxygen and a second substance containing a metal element, in which a first region per unit area at a first interface between the first superconducting layer and the connection layer is 1% or more and 50% or less where the second substance and the first superconducting layer are in contact with each other, and a second region per unit area at a second interface between the second superconducting layer and the connection layer is 1% or more and 50% or less where the second substance and the second superconducting layer are in contact with each other.

Abstract: A connection structure of conductive layers according to an embodiment includes: a first conductive member including a first conductive layer and a first substrate, the first conductive member extending in a first direction, the first conductive member curved in the first direction such that the first conductive layer side is convex; a second conductive member including a second conductive layer and a second substrate, the second conductive member extending in the first direction, the second conductive member curved in the first direction such that the second conductive layer side is convex; a third conductive member including a third conductive layer and a third substrate, the third conductive member extending in the first direction; a first connection layer between a the first conductive layer and the third conductive layer, the first connection layer having varying thickness; and a second connection layer between the second conductive layer and the third conductive layer, the second connection layer having

Abstract: A connection structure of a superconducting layer of an embodiment incudes a first superconducting member including a first superconducting layer, and extends in a first direction, a second superconducting member including a second superconducting layer facing the first superconducting layer, and extends in the first direction, the second superconducting member having a first region, a second region, and a third region which is separated in the second direction from the second region, and a connection layer that contains a rare earth element (RE), barium (Ba), copper (Cu), and oxygen (O), and connects the first superconducting layer and the second superconducting layer. The first superconducting layer is present in a third direction between the second region and the third region, the third direction being perpendicular to the first direction and perpendicular to the second direction.

Abstract: A connection structure for a superconducting layer according to an embodiment includes a first superconducting layer; a second superconducting layer; and a connection layer disposed between the first superconducting layer and the second superconducting layer, the connection layer including crystal grains containing a rare earth element (RE), barium (Ba), copper (Cu), and oxygen (O), the crystal grains having a grain size distribution including a bimodal distribution. The bimodal distribution includes a first distribution including a first peak and a second distribution including a second peak. A first grain size corresponding to the first peak is larger than a second grain size corresponding to the second peak. Among the crystal grains, crystal grains having a grain size corresponding to the first distribution include a crystal grain having a plate shape or a flat shape.

Abstract: A structure includes: a ? silicon nitride crystal phase; and a Y2MgSi2O5N crystal phase. The structure gives a X-ray diffraction pattern by a ?-2? method, the pattern having a ratio of a peak intensity of a (22-1) plane of the Y2MgSi2O5N crystal phase to a peak intensity of a (200) plane of the ? silicon nitride crystal phase, the peak intensity of the (200) plane being determined at a position of 2?=27.0±1°, the peak intensity of the (22-1) plane being determined at a position of 2?=30.3±1°, and the ratio being 0.001 or more and 0.01 or less.

Abstract: The embodiments provide a radiation detection material emitting fluorescence with high intensity and short lifetime, and also provide a radiation detection device. The polycrystalline radiation detection material of the embodiment is represented by the following formula (1) TlM1-x-yRxX3-z??(1). In the formula, M is at least one metal element selected form the group consisting of Ca, Sr, Ba and Mg; R is at least one luminescence center element selected form the group consisting of Ce, Pr, Yb and Nd; X is at least one halogen element selected form the group consisting of Cl, Br and F; and x, y and z are numbers satisfying the conditions of 0?x?0.5, ?0.1?y?0.1, and ?0.5?z?1, respectively.

Abstract: A structure includes: a ? silicon nitride crystal phase; and a Y2MgSi2O5N crystal phase. The structure gives a X-ray diffraction pattern by a ?-2? method, the pattern having a ratio of a peak intensity of a (22-1) plane of the Y2MgSi2O5N crystal phase to a peak intensity of a (200) plane of the ? silicon nitride crystal phase, the peak intensity of the (200) plane being determined at a position of 2?=27.0±1°, the peak intensity of the (22-1) plane being determined at a position of 2?=30.3±1°, and the ratio being 0.001 or more and 0.01 or less.

Abstract: The embodiments provide a radiation detection material emitting fluorescence with high intensity and short lifetime, and also provide a radiation detection device. The polycrystalline radiation detection material of the embodiment is represented by the following formula (1) TlM1-x-yRxX3-z??(1). In the formula, M is at least one metal element selected form the group consisting of Ca, Sr, Ba and Mg; R is at least one luminescence center element selected form the group consisting of Ce, Pr, Yb and Nd; X is at least one halogen element selected form the group consisting of Cl, Br and F; and x, y and z are numbers satisfying the conditions of 0?x?0.5, ?0.1?y?0.1, and ?0.5?z?1, respectively.

Abstract: According to one embodiment, a structure according to the embodiment includes a ? type silicon nitride type crystal phase and a Y2Si3O3N4 type crystal phase. In an X-ray diffraction pattern according to a ?-2? method of the structure, a ratio of a second peak intensity being maximum and appearing at 2?=31.93±0.1° with respect to a first peak intensity being maximum and appearing at 2?=27.03±0.1° is 0.005 or more and 0.20 or less.

Abstract: Embodiments of the present invention provide a phosphor improved in the emission intensity maintenance ratio without impairing the emission intensity and further a light-emitting device employing that phosphor. The phosphor is activated by manganese and has a basic structure comprising at least one element selected from the group consisting of potassium, sodium and calcium; at least one element selected from the group consisting of silicon and titanium; and fluorine. In an IR absorption spectrum of the phosphor, the intensity ratio of the peak in 3570 to 3610 cm?1 to that in 1200 to 1240 cm?1 is 0.1 or less.

Abstract: A red-light emitting phosphor is provided, having a basic composition represented by Ka(Si1-x,Mnx)Fb and also having a particular Raman spectrum, wherein the intensity ratio I1/I0, which is a ratio of (I1) the peak in a Raman shift of 600±10 cm?1 assigned to Mn—F bonds in the crystal to that (I0) in a Raman shift of 650±10 cm?1 assigned to Si—F bonds in the crystal, is 0.09 to 0.22. This phosphor is produced by bringing a silicon source in contact with an aqueous reaction solution containing potassium permanganate and hydrogen fluoride, wherein a molar ratio of hydrogen fluoride to potassium permanganate is 87 to 127.

Abstract: A thermally conductive insulator consisting essentially of a silicon nitride member, comprise: a first region provided 10 ?m or more away from a first surface of the member along a depth direction in a section vertical to the first surface and containing at least one substance selected from the group consisting of silicon carbide and a carbon material; and a second region provided between the first surface and the first region. A concentration of silicon nitride of the second region is higher than a concentration of silicon nitride of the first region.

Abstract: A phosphor comprising: a chemical composition expressed by the following formula (K1-p, Mp)a(Si1-y, Mny)Fb (M is at least one element selected from the group consisting of Na and Ca, and p satisfies 0?p?0.01, a satisfies 1.5?a?2.5, b satisfies 5.5?b?6.5, and y satisfies 0<y?0.1), Wherein the phosphor satisfies I (2,500-3,000)/I (1,200-1,240)<0.04, when I (1,200-1,240) is an intensity of a highest peak in a range of 1,200-1,240 cm?1 and I (2,500-3,000) is an intensity of a highest peak in a range of 2,500-3,000 cm?1 in an infrared spectrum.

Abstract: The present invention provides a red-light emitting phosphor that exhibits high luminous efficacy and emits light when excited by light having an emission peak in the blue region; and a method for manufacturing said phosphor. The phosphor represented by general formula (A): a(Si1-x-y,Tix,Mny)Fb and also characterized in that the half-band width of a diffraction pattern attributed to the (400) plane is not less than 0.2° determined by X-ray powder diffractometry. This phosphor can be manufactured by preparing a reaction solution consisting of an aqueous solution containing potassium permanganate and hydrogen fluoride, immersing a silicon source in said reaction solution, and reacting them for 20 to 80 minutes.

Abstract: The present invention provides a red-light emitting phosphor having high luminous efficacy and also a manufacturing method thereof. The phosphor is a red-light emitting phosphor mainly comprising potassium fluorosilicate and having a basic surface composition represented by the formula (A): KaSiFb. The disclosed phosphor is characterized by being activated by manganese and also characterized in that the amount of manganese on the surface is not more than 0.2 mol % based on the total amount of all the elements on the surface. This phosphor can be manufactured by washing with a weak acid a product obtained by placing a silicon source to react in contact with a reaction solution containing potassium permanganate.

Abstract: The embodiment of the present disclosure provides a phosphor improved in the emission intensity maintenance ratio without impairing the emission intensity. The phosphor is a silicofluoride phosphor and shows an IR absorption spectrum satisfying the conditions of 0?I2/I1?0.01 and 6.7?(I3/I1)/CMn. In those conditional formulas, I1, I2 and I3 are intensities of the maximum peaks in the ranges of 1200 to 1240 cm?1, 3570 to 3610 cm?1 and 635 to 655 cm?1, respectively, and CMn is a weight percent of Mn contained the phosphor.