Patents by Inventor Keiko Albessard

Keiko Albessard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180040784
    Abstract: The embodiment of the present disclosure provides a phosphor improved in the emission intensity maintenance ratio without impairing the emission intensity. The phosphor is a silicofluoride phosphor and shows an IR absorption spectrum satisfying the conditions of 0?I2/I1?0.01 and 6.7?(I3/I1)/CMn. In those conditional formulas, I1, I2 and I3 are intensities of the maximum peaks in the ranges of 1200 to 1240 cm?1, 3570 to 3610 cm?1 and 635 to 655 cm?1, respectively, and CMn is a weight percent of Mn contained the phosphor.
    Type: Application
    Filed: February 28, 2017
    Publication date: February 8, 2018
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi FUKUDA, Keiko ALBESSARD, Yasushi HATTORI, Seiichi SUENAGA
  • Publication number: 20180006194
    Abstract: A phosphor comprising: a chemical composition expressed by the following formula (K1-p, Mp)a(Si1-y, Mny)Fb (M is at least one element selected from the group consisting of Na and Ca, and p satisfies 0?p?0.01, a satisfies 1.5?a?2.5, b satisfies 5.5?b?6.5, and y satisfies 0<y?0.1), Wherein the phosphor satisfies I (2,500-3,000)/I (1,200-1,240)<0.04, when I (1,200-1,240) is an intensity of a highest peak in a range of 1,200-1,240 cm?1 and I (2,500-3,000) is an intensity of a highest peak in a range of 2,500-3,000 cm?1 in an infrared spectrum.
    Type: Application
    Filed: March 9, 2017
    Publication date: January 4, 2018
    Applicant: kabushiki Kaisha Toshiba
    Inventors: Keiko ALBESSARD, Ryosuke HIRAMATSU, Kunio ISHIDA, Yasushi HATTORI, Masahiro KATO
  • Publication number: 20170335183
    Abstract: Embodiments of the present invention provide a phosphor improved in the emission intensity maintenance ratio without impairing the emission intensity and further a light-emitting device employing that phosphor. The phosphor is activated by manganese and has a basic structure comprising at least one element selected from the group consisting of potassium, sodium and calcium; at least one element selected from the group consisting of silicon and titanium; and fluorine. In an IR absorption spectrum of the phosphor, the intensity ratio of the peak in 3570 to 3610 cm?1 to that in 1200 to 1240 cm?1 is 0.1 or less.
    Type: Application
    Filed: July 26, 2017
    Publication date: November 23, 2017
    Applicants: Kabushiki Kaisha Toshiba, TOSHIBA MATERIALS CO., LTD.
    Inventors: Ryosuke HIRAMATSU, Keiko ALBESSARD, Kunio ISHIDA, Yasushi HATTORI, Masahiro KATO
  • Patent number: 9520540
    Abstract: A light-emitting device of an embodiment includes a light-emitting element emitting blue excitation light and a first phosphor excited by the blue excitation light and emitting fluorescence. A peak wavelength of the fluorescence is not shorter than 520 nm and shorter than 660 nm and the peak wavelength of the fluorescence shifting in the same direction when a peak wavelength of the blue excitation light shifts. The first phosphor is one of a yellow phosphor emitting yellow fluorescence, a green phosphor emitting green fluorescence, a yellow-green/yellow phosphor emitting yellow-green/yellow fluorescence and a red phosphor emitting red fluorescence.
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: December 13, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kunio Ishida, Keiko Albessard, Yasushi Hattori, Iwao Mitsuishi, Yumi Fukuda, Ryosuke Hiramatsu, Aoi Okada, Masahiro Kato
  • Publication number: 20160340577
    Abstract: To provide a red-light emitting phosphor having high luminous efficacy, also a light-emitting device, and further a manufacturing method of the phosphor. Disclosed is a red-light emitting phosphor having a basic composition represented by Ka(Si1-x,Mnx)Fb and also having a particular Raman spectrum. In the spectrum, the intensity ratio of the peak in a Raman shift of 600±10 cm?1 assigned to Mn—F bonds in the crystal to that in a Raman shift of 650±10 cm?1 assigned to Si—F bonds in the crystal is 0.09 to 0.22. This phosphor can be produced by bringing a silicon source in contact with a reaction solution containing potassium permanganate and hydrogen fluoride in such amounts that the molar ratio of hydrogen fluoride to potassium permanganate is 87 to 127.
    Type: Application
    Filed: June 7, 2016
    Publication date: November 24, 2016
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Ryosuke HIRAMATSU, Jun TAMURA, Kunio ISHIDA, Keiko ALBESSARD, Masahiro KATO
  • Publication number: 20160083649
    Abstract: An embodiment is to provide a phosphor that has favorable temperature characteristics, that can emit yellow light with a wide half-width emission spectrum, and that has high quantum efficiency. The phosphor emits yellow light when excited with light having a luminescence peak in a wavelength range of 250 to 500 nm, and has a crystal structure that is substantially identical to the crystal structure of Sr2Al3Si7ON13. The half-width of a peak at a diffraction peak position 2? in a range of 35.2 to 35.6, detected in X-ray diffraction of the phosphor according to Bragg-Brendano method using a Cu-K? line, is 0.10° or less.
    Type: Application
    Filed: September 16, 2015
    Publication date: March 24, 2016
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Iwao MITSUISHI, Masahiro KATO, Yasushi HATTORI, Yumi FUKUDA, Keiko ALBESSARD
  • Publication number: 20150380614
    Abstract: The present invention provides a red-light emitting phosphor that exhibits high luminous efficacy and emits light when excited by light having an emission peak in the blue region; and a method for manufacturing said phosphor. The phosphor represented by general formula (A): a(Si1-x-y,Tix,Mny)Fb and also characterized in that the half-band width of a diffraction pattern attributed to the (400) plane is not less than 0.2° determined by X-ray powder diffractometry. This phosphor can be manufactured by preparing a reaction solution consisting of an aqueous solution containing potassium permanganate and hydrogen fluoride, immersing a silicon source in said reaction solution, and reacting them for 20 to 80 minutes.
    Type: Application
    Filed: September 9, 2015
    Publication date: December 31, 2015
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Ryosuke HIRAMATSU, Keiko ALBESSARD, Naotoshi MATSUDA, Masahiro KATO
  • Publication number: 20150380613
    Abstract: The present invention provides a red-light emitting phosphor having high luminous efficacy and also a manufacturing method thereof. The phosphor is a red-light emitting phosphor mainly comprising potassium fluorosilicate and having a basic surface composition represented by the formula (A): KaSiFb. The disclosed phosphor is characterized by being activated by manganese and also characterized in that the amount of manganese on the surface is not more than 0.2 mol % based on the total amount of all the elements on the surface. This phosphor can be manufactured by washing with a weak acid a product obtained by placing a silicon source to react in contact with a reaction solution containing potassium permanganate.
    Type: Application
    Filed: September 10, 2015
    Publication date: December 31, 2015
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Ryosuke HIRAMATSU, Keiko ALBESSARD, Naotoshi MATSUDA, Masahiro KATO
  • Patent number: 9187693
    Abstract: The present embodiments provide a europium-activated oxynitride phosphor and a production method thereof. This phosphor emits red luminescence having a peak at 630 nm or longer and can be produced by use of inexpensive oxides as raw materials containing alkaline earth metals such as strontium. The oxynitride phosphor is activated by a divalent europium and represented by the formula (1): (M1-xEux)AlaSibOcNdCe??(1). In the formula, M is an alkaline earth metal, and x, a, b, c, d and e are numbers satisfying the conditions of 0<x<0.2, 1.3?a?1.8, 3.5?b?4, 0.1?c?0.3, 6.7?d?7.2 and 0.01?e?0.1, respectively.
    Type: Grant
    Filed: September 11, 2012
    Date of Patent: November 17, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naotoshi Matsuda, Yumi Fukuda, Keiko Albessard, Masahiro Kato, Iwao Mitsuishi
  • Publication number: 20150318451
    Abstract: A light emitting device of an embodiment includes a light emitting element emitting near-ultraviolet light or blue light as exciting light; and a yellow color conversion layer including a yellow phosphor and a resin, the yellow phosphor represented by formula (1) and being capable of converting the exciting light to yellow light, the resin surrounding the yellow phosphor, the yellow color conversion layer containing the yellow phosphor at a volume concentration of at most 7%, the yellow color conversion layer having a region whose cross section parallel to a light emitting surface of the light emitting element has an area larger than the light emitting surface, (Sr1-x1Cex1)a1AlSib1Oc1Nd1 ??(1) wherein x1, a1, b1, c1, and d1 satisfy following relations: 0<x1?0.1, 0.6<a1<0.95, 2.0<b1<3.9, 0<c1<0.45, and 4.0<d1<5.0.
    Type: Application
    Filed: April 27, 2015
    Publication date: November 5, 2015
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kunio ISHIDA, Keiko Albessard, Yasushi Hattori, Masahiro Kato
  • Patent number: 9133391
    Abstract: According to one embodiment, the luminescent material exhibits a luminescence peak in a wavelength ranging from 500 to 600 nm when excited with light having an emission peak in a wavelength ranging from 250 to 500 nm. The luminescent material has a composition represented by Formula 1 below: (M1-xCex)2yAlzSi10-zOuNw??Formula 1 wherein M represents Sr and a part of Sr may be substituted by at least one selected from Ba, Ca, and Mg; x, y, z, u, and w satisfy following conditions: 0<x?1, 0.8?y?1.1, 2?z?3.5, u?1 1.8?z?u, and 13?u+w?15.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: September 15, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi Fukuda, Iwao Mitsuishi, Keiko Albessard
  • Publication number: 20150247085
    Abstract: The embodiment of the present disclosure provides a phosphor exhibiting an emission peak in the wavelength range of 565 to 600 nm under excitation by light having a peak in the wavelength range of 250 to 500 nm. The emission peak has a half width of 115 to 180 nm inclusive. This phosphor has a crystal structure of Sr2Si7Al3ON13, and is activated by cerium.
    Type: Application
    Filed: February 27, 2015
    Publication date: September 3, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Keiko ALBESSARD, Yumi FUKUDA, Kunio ISHIDA, Iwao MITSUISHI, Aoi OKADA, Yasushi HATTORI, Ryosuke HIRAMATSU, Masahiro KATO
  • Publication number: 20150240154
    Abstract: The embodiment of the present disclosure provides a yellow light-emitting phosphor represented by the formula (1): ((SrpM1-p)1-xCex)2yAlzSi10-zOuNw. In the formula, M is at least one of the alkaline earth metals, and p, x, y, z, u and w are numbers satisfying the conditions of 0?p?1, 0<x?1, 0.8?y?1.1, 2?z?3.5, 0<u?1, 1.8?z?u and 13?u+w?15. The emission peak of the phosphor shifts within a range of less than 15 nm when the peak of exciting light is changed in the range of 350 to 475 nm.
    Type: Application
    Filed: February 20, 2015
    Publication date: August 27, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi FUKUDA, Keiko ALBESSARD, Kunio ISHIDA, Masahiro KATO
  • Patent number: 9022591
    Abstract: According to one embodiment, the luminescent material exhibits a luminescence peak in a wavelength ranging from 490 to 580 nm when excited with light having an emission peak in a wavelength ranging from 250 to 500 nm. The luminescent material has a diffraction peak intensity of the largest peak detected at 2?=30.1-31.1° that is higher than the diffraction peak intensity of the peak detected at 2?=25.0-26.0° in X-ray diffraction by the Bragg-Brendano method using Cu-K? line and its composition is represented by (Sr1?xEux)3?yAl3+zSi13?zO2+uN21?w (a part of the Sr may be substituted by at least one selected from Ba, Ca, Mg and Na, 0<x?1, ?0.1?y?0.3, ?3?z??0.52, and ?1.5?u??0.3, ?3<u?w?1).
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: May 5, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yumi Fukuda, Masahiro Kato, Naotoshi Matsuda, Keiko Albessard
  • Patent number: 8974697
    Abstract: According to one embodiment, the luminescent material shows a luminescence peak in a wavelength range of 570 to 670 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material includes a host material having a crystal structure substantially same as the crystal structure of Sr2Si7Al3ON13. The host material is activated by Eu, and includes Sr and Ca to satisfy a relationship of 0.008?MCa/(MSr+MCa)?0.114, where MCa is a number of moles of Ca and MSr is a number of moles of Sr.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: March 10, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Keiko Albessard, Masahiro Kato, Yumi Fukuda, Iwao Mitsuishi, Takahiro Sato, Shigeya Kimura, Aoi Okada, Naotoshi Matsuda, Ryosuke Hiramatsu, Yasushi Hattori, Kunio Ishida, Hironori Asai
  • Patent number: 8937328
    Abstract: A light emitting device includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the equation, ((M1?x1Eux1)3?ySi13?zAl3+zO2+uN21?w), and an average particle diameter of 12 ?m or more, wherein in the equation, M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements, and x1, y, z, u, and w satisfy each of the inequalities simultaneously, that is to say each of the following inequalities is satisfied by the choice of values of the identified paramaters within the noted ranges of 0<x1<1, ?0.1<y<0.3, ?3<z?1, ?3<u?w?1.5, 2<u, w<21.
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: January 20, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Iwao Mitsuishi, Yumi Fukuda, Aoi Okada, Naotoshi Matsuda, Shinya Nunoue, Keiko Albessard, Masahiro Kato
  • Publication number: 20150008817
    Abstract: The embodiment provides a red light-emitting fluorescent substance represented by the following formula (1): (M1-xECx)aM1bAlOcNd??(1). In the formula (1), M is an element selected from the group consisting of IA group elements, IIA group elements, IIIA group elements, IIIB group elements, rare earth elements and IVA group elements; EC is an element selected from the group consisting of Eu, Ce, Mn, Tb, Yb, Dy, Sm, Tm, Pr, Nd, Pm, Ho, Er, Cr, Sn, Cu, Zn, As, Ag, Cd, Sb, Au, Hg, Tl, Pb, Bi and Fe; M1 is different from M and is selected from the group consisting of tetravalent elements; and x, a, b, c and d are numbers satisfying the conditions of 0<x<0.2, 0.55<a<0.80, 2.10<b<3.90, 0<c?0.25 and 4<d<5, respectively. This substance emits luminescence having a peak in the wavelength range of 620 to 670 nm when excited by light of 250 to 500 nm.
    Type: Application
    Filed: September 19, 2014
    Publication date: January 8, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Aoi OKADA, Yumi Fukuda, Naotoshi Matsuda, Iwao Mitsuishi, Shinya Nunoue, Keiko Albessard, Masahiro Kato
  • Patent number: 8921878
    Abstract: A light emitting device according to one embodiment includes a board; a light emitting element mounted on the board, emitting light having a wavelength of 250 nm to 500 nm; a red fluorescent layer formed on the element, including a red phosphor expressed by equation (1), having a semicircular shape with a diameter r; (M1?x1Eux1)aSibAlOcNd??(1) (In the equation (1), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al (Aliminum), rare-earth elements, and IVB group elements), an intermediate layer formed on the red fluorescent layer, being made of transparent resin, having a semicircular shape with a diameter D; and a green fluorescent layer formed on the intermediate layer, including a green phosphor, having a semicircular shape. A relationship between the diameter r and the diameter D satisfies equation (2): 2.0r(?m)?D?(r+1000)(?m).
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: December 30, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Iwao Mitsuishi, Kunio Ishida, Yumi Fukuda, Aoi Okada, Naotoshi Matsuda, Keiko Albessard, Shinya Nunoue, Masahiro Kato
  • Publication number: 20140339978
    Abstract: According to one embodiment, the phosphor exhibits a luminescence peak within a wavelength range of 500 to 600 nm when it is excited with light having an emission peak within a wavelength range of 250 to 500 nm. The phosphor has a composition represented by (M1-xCex)2yAlzSi10-zOuNwBs (M represents Sr and a part of Sr may be substituted by at least one selected from the group consisting of Ba, Ca and Mg; and x, y, z, u, w and s satisfy 0<x?1, 0.8?y?1.1, 2?z?3.5, 1<u?1, 1.5?z?u, 13?u+w?15, and 0<s<0.245.
    Type: Application
    Filed: February 20, 2014
    Publication date: November 20, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Aoi Okada, Masahiro Kato, Keiko Albessard, Yumi Fukuda, Iwao Mitsuishi, Yasushi Hattori
  • Patent number: 8858835
    Abstract: The embodiment provides a red light-emitting fluorescent substance represented by the following formula (1): (M1-xECx)aM1bAlOcNd??(1). In the formula (1), M is an element selected from the group consisting of IA group elements, IIA group elements, IIIA group elements, IIIB group elements, rare earth elements and IVA group elements; EC is an element selected from the group consisting of Eu, Ce, Mn, Tb, Yb, Dy, Sm, Tm, Pr, Nd, Pm, Ho, Er, Cr, Sn, Cu, Zn, As, Ag, Cd, Sb, Au, Hg, Tl, Pb, Bi and Fe; M1 is different from M and is selected from the group consisting of tetravalent elements; and x, a, b, c and d are numbers satisfying the conditions of 0<x<0.2, 0.55<a<0.80, 2.10<b<3.90, 0<c?0.25 and 4<d<5, respectively. This substance emits luminescence having a peak in the wavelength range of 620 to 670 nm when excited by light of 250 to 500 nm.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: October 14, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Aoi Okada, Yumi Fukuda, Naotoshi Matsuda, Iwao Mitsuishi, Shinya Nunoue, Keiko Albessard, Masahiro Kato