Patents by Inventor Keishin Yamazaki
Keishin Yamazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230189407Abstract: There is provided a technique, which includes: a process chamber where a substrate is processed; a microwave oscillator configured to supply microwaves to the process chamber; and a controller configured to be capable of controlling the microwave oscillator to perform: a heating process where the substrate is heated with a first microwave, among the supplied microwaves, supplied at a first microwave power so that a process of supplying the first microwave during a supply time and a process of stopping the supply of the first microwave during a stop time shorter than the supply time are performed a predetermined number of times or for a first predetermined time; and a modifying process in which the substrate is supplied with a second microwave, among the supplied microwaves, at a second microwave power higher than the first microwave power for a second predetermined time while maintaining the second microwave power.Type: ApplicationFiled: February 13, 2023Publication date: June 15, 2023Applicant: Kokusai Electric CorporationInventors: Katsuhiko YAMAMOTO, Keishin Yamazaki, Shinya Sasaki, Noriaki Michita
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Publication number: 20220246463Abstract: There is provided a technique that includes a process chamber configured to process at least one substrate; a microwave generator configured to generate a microwave; a substrate holder configured to load and hold the at least one substrate; and a rotator which includes an output shaft configured to support the substrate holder and an input shaft installed at an off-centered position with respect to the output shaft.Type: ApplicationFiled: January 27, 2022Publication date: August 4, 2022Applicant: Kokusai Electric CorporationInventors: Keishin YAMAZAKI, Norichika YAMAGISHI
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Patent number: 11377730Abstract: Provided is a technique capable of suppressing the occurrence of by-products by suppressing adhesion of the by-products. A substrate processing apparatus includes: a reaction tube where a substrate is processed; a furnace opening unit disposed at a lower end of the reaction tube and having an upper surface and an inner circumferential surface, the furnace opening unit including: a concave portion disposed on the upper surface; and a convex portion having at least one notch connecting the concave portion to the inner circumferential surface; a cover covering at least the inner circumferential surface with a predetermined gap therebetween; and a gas supply unit configured to supply a gas to the concave portion.Type: GrantFiled: September 20, 2018Date of Patent: July 5, 2022Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Kosuke Takagi, Shinya Morita, Naonori Akae, Keishin Yamazaki
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Patent number: 10351951Abstract: A substrate treatment apparatus includes: a reaction tube including a substrate treatment region in which a substrate is treated; and a furnace opening member disposed in a lower portion of the reaction tube. The reaction tube includes a flange formed to protrude outward in the lower portion of the reaction tube, and an extension portion formed to extend downward from a lower end of the flange, the extension portion being formed to have a thickness larger than a thickness of the reaction tube at a position corresponding to the substrate treatment region, and being configured to cover an inner circumferential surface of the furnace opening member. An inner surface of the extension portion protrudes more inward than an inner surface of the reaction tube at the position corresponding to the substrate treatment region.Type: GrantFiled: August 1, 2017Date of Patent: July 16, 2019Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Keishin Yamazaki, Satoru Murata, Shinya Morita
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Publication number: 20190017168Abstract: Provided is a technique capable of suppressing the occurrence of by-products by suppressing adhesion of the by-products. A substrate processing apparatus includes: a reaction tube where a substrate is processed; a furnace opening unit disposed at a lower end of the reaction tube and having an upper surface and an inner circumferential surface, the furnace opening unit including: a concave portion disposed on the upper surface; and a convex portion having at least one notch connecting the concave portion to the inner circumferential surface; a cover covering at least the inner circumferential surface with a predetermined gap therebetween; and a gas supply unit configured to supply a gas to the concave portion.Type: ApplicationFiled: September 20, 2018Publication date: January 17, 2019Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Kosuke TAKAGI, Shinya MORITA, Naonori AKAE, Keishin YAMAZAKI
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Publication number: 20170335452Abstract: A substrate treatment apparatus includes: a reaction tube including a substrate treatment region in which a substrate is treated; and a furnace opening member disposed in a lower portion of the reaction tube. The reaction tube includes a flange formed to protrude outward in the lower portion of the reaction tube, and an extension portion formed to extend downward from a lower end of the flange, the extension portion being formed to have a thickness larger than a thickness of the reaction tube at a position corresponding to the substrate treatment region, and being configured to cover an inner circumferential surface of the furnace opening member. An inner surface of the extension portion protrudes more inward than an inner surface of the reaction tube at the position corresponding to the substrate treatment region.Type: ApplicationFiled: August 1, 2017Publication date: November 23, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Keishin YAMAZAKI, Satoru MURATA, Shinya MORITA
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Patent number: 9816182Abstract: A substrate processing apparatus is disclosed. The substrate processing apparatus includes a process chamber configured to accommodate a substrate; a gas supply unit configured to supply a process gas into the process chamber; a lid member configured to block an end portion opening of the process chamber; an end portion heating unit installed around a side wall of an end portion of the process chamber; and a thermal conductor installed on a surface of the lid member in an inner side of the process chamber, and configured to be heated by the end portion heating unit.Type: GrantFiled: January 29, 2015Date of Patent: November 14, 2017Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Hideto Tateno, Yuichi Wada, Hiroshi Ashihara, Keishin Yamazaki, Takurou Ushida, Iwao Nakamura, Manabu Izumi
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Publication number: 20170088948Abstract: Provided is a technique capable of suppressing the occurrence of by-products by suppressing adhesion of the by-products. A substrate processing apparatus includes: a reaction tube where a substrate is processed; a furnace opening unit disposed at a lower end of the reaction tube and having an upper surface and an inner circumferential surface, the furnace opening unit including: a concave portion disposed on the upper surface; and a convex portion having at least one notch connecting the concave portion to the inner circumferential surface; a cover covering at least the inner circumferential surface with a predetermined gap therebetween; and a gas supply unit configured to supply a gas to the concave portion.Type: ApplicationFiled: February 16, 2015Publication date: March 30, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kosuke TAKAGI, Shinya MORITA, Naonori AKAE, Keishin YAMAZAKI
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Publication number: 20160076149Abstract: By suppressing a re-liquefaction of a processing gas in a reaction tube, the processing gas is maintained in a gaseous state. There is provided a substrate processing apparatus that includes a reaction tube, a supply unit, an exhaust unit, a first heating unit configured to heat a substrate in the reaction tube, a second heating unit configured to heat a downstream portion of a reactant in gaseous state flowing in the reaction tube from the supply unit toward the exhaust unit, and a furnace lid, wherein the furnace lid includes a heat absorbing unit facing a lower surface of a lower end portion of the reaction tube and being heated by the second heating unit, the heat absorbing unit having an outer perimeter surface disposed outer than an inner circumference surface of the lower end portion.Type: ApplicationFiled: November 23, 2015Publication date: March 17, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Keishin YAMAZAKI, Manabu IZUMI, Katsuaki NOGAMI
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Publication number: 20150140835Abstract: A substrate processing apparatus is disclosed. The substrate processing apparatus includes a process chamber configured to accommodate a substrate; a gas supply unit configured to supply a process gas into the process chamber; a lid member configured to block an end portion opening of the process chamber; an end portion heating unit installed around a side wall of an end portion of the process chamber; and a thermal conductor installed on a surface of the lid member in an inner side of the process chamber, and configured to be heated by the end portion heating unit.Type: ApplicationFiled: January 29, 2015Publication date: May 21, 2015Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Hideto TATENO, Yuichi WADA, Hiroshi ASHIHARA, Keishin YAMAZAKI, Takurou USHIDA, Iwao NAKAMURA, Manabu IZUMI
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Patent number: 8963051Abstract: A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus (10) is provided with a reaction tube (42) for treating a substrate (54), a quartz adaptor (44) for supporting the reaction tube (42), a nozzle (66) connected to the adaptor (44) for supplying a treatment gas into the reaction tube (42), and a heater (46) provided outside the reaction tube (42) for heating inside the reaction tube (42). The nozzle (66) is connected to an upper plane of the adaptor (44) in the reaction tube (42) at least a part which is of the nozzle (66) and is connected with the adaptor (44) is made of quartz and other nozzle parts are made of silicon carbide.Type: GrantFiled: September 15, 2005Date of Patent: February 24, 2015Assignee: Hitachi Kokusai Electric Inc.Inventors: Tomoharu Shimada, Akira Morohashi, Kojiro Yokozawa, Keishin Yamazaki
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Patent number: 8734148Abstract: A heat treatment apparatus capable of achieving high-accuracy processing and high safety and a method of manufacturing a substrate are provided. The heat treatment apparatus 10 includes a reaction tube 42 for processing a substrate, a manifold 44 for supporting the reaction tube 42, a heater 46 installed around the reaction tube 42 to heat an inner part of the reaction tube 42, a surrounding member 500 installed to surround a side portion of the reaction tube 42 arranged in a lower portion than the heater 46; an exhaust device 301 for forcibly exhausting a gap 506 between the surrounding member 500 and the reaction tube 42; and a sealing member 150 installed in a contacting portion between the reaction tube 42 and the manifold 44. Here, an inlet hole 501 through which the exhaust device inhales an atmosphere outside the surrounding member 500 to the gap 506 is installed in the surrounding member 500.Type: GrantFiled: February 24, 2011Date of Patent: May 27, 2014Assignee: Hitachi Kokusai Electric Inc.Inventors: Keishin Yamazaki, Akira Hayashida, Masaaki Ueno, Manabu Izumi, Katsuaki Nogami
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Publication number: 20110207339Abstract: A heat treatment apparatus capable of achieving high-accuracy processing and high safety and a method of manufacturing a substrate are provided. The heat treatment apparatus 10 includes a reaction tube 42 for processing a substrate, a manifold 44 for supporting the reaction tube 42, a heater 46 installed around the reaction tube 42 to heat an inner part of the reaction tube 42, a circumferential portion 500 installed to surround a side portion of the reaction tube 42 arranged in a lower portion than the heater 46; an exhaust device 301 for forcibly exhausting a gap 506 between the circumferential portion 500 and the reaction tube 42; and a sealing member 150 installed in a contacting portion between the reaction tube 42 and the manifold 44. Here, an inlet port 501 through which the exhaust device inhales an atmosphere outside the circumferential portion 500 to the gap 506 is installed in the circumferential portion 500.Type: ApplicationFiled: February 24, 2011Publication date: August 25, 2011Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Keishin YAMAZAKI, Akira HAYASHIDA, Masaaki UENO, Manabu IZUMI, Katsuaki NOGAMI
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Patent number: 7901206Abstract: A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.Type: GrantFiled: March 27, 2006Date of Patent: March 8, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Akira Morohashi, Iwao Nakamura, Ryota Sasajima, Keishin Yamazaki, Sadao Nakashima
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Patent number: 7820118Abstract: To provide a substrate treatment apparatus capable of performing temperature control in a reaction tube with accuracy. A substrate treatment apparatus 100 includes: a reaction tube 42 for treating a substrate 54; a heater 46 for heating the substrate 54 in the reaction tube 42; a cooling air channel 72 for circulating cooling air 70 outside the reaction tube 42; and a thermocouple 82 for detecting temperature around the reaction tube 42. The thermocouple 82 is disposed in the cooling air channel 72 for circulating cooling air 70 in a state where the thermocouple 82 is covered with a protection tube 86, and a cover 88 for intercepting flow toward the protection tube 86 of the cooling air 70 is disposed outside the protection tube 86.Type: GrantFiled: August 4, 2006Date of Patent: October 26, 2010Assignee: Hitachi Kokusai Electric Inc.Inventors: Keishin Yamazaki, Iwao Nakamura, Ryota Sasajima
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Patent number: D711843Type: GrantFiled: December 26, 2013Date of Patent: August 26, 2014Assignee: Hitachi Kokusai Electric Inc.Inventors: Keishin Yamazaki, Masahiro Miyake, Kosuke Takagi, Yasuaki Komae, Shinya Morita, Naonori Akae, Masato Terasaki
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Patent number: D719114Type: GrantFiled: December 26, 2013Date of Patent: December 9, 2014Assignee: Hitachi Kokusai Electric Inc.Inventors: Keishin Yamazaki, Masahiro Miyake, Kosuke Takagi, Yasuaki Komae, Shinya Morita, Naonori Akae, Masato Terasaki
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Patent number: D720707Type: GrantFiled: December 26, 2013Date of Patent: January 6, 2015Assignee: Hitachi Kokusai Electric Inc.Inventors: Keishin Yamazaki, Masahiro Miyake, Kosuke Takagi, Yasuaki Komae, Shinya Morita, Naonori Akae, Masato Terasaki
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Patent number: D725055Type: GrantFiled: December 26, 2013Date of Patent: March 24, 2015Assignee: Hitachi Kokusai Electric Inc.Inventors: Keishin Yamazaki, Masahiro Miyake, Kosuke Takagi, Yasuaki Komae, Shinya Morita, Naonori Akae, Masato Terasaki
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Patent number: D739832Type: GrantFiled: December 26, 2013Date of Patent: September 29, 2015Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Keishin Yamazaki, Masahiro Miyake, Shinya Morita, Kosuke Takagi, Yasuaki Komae, Naonori Akae, Masato Terasaki, Takatomo Yamaguchi, Takafumi Sasaki