Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

Abstract: The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

Abstract: The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

Abstract: An optical member and a method for producing this optical member are provided. The optical member is composed of an injection molded article. The injection molded article includes a glutarimide resin that contains a glutarimide unit having an imidocarbonyl group provided by the imidization of a carbonyl group deriving from (meth)acrylate ester monomer, a repeat unit deriving from (meth)acrylate ester monomer, and a repeat unit deriving from aromatic vinyl monomer. The glutarimide resin has an orientation birefringence of ?0.5×10?3 to 0.5×10?3, a photoelastic constant of ?3.0×10?12 Pa?1 to 3.0×10?12 Pa?1, and a glass transition temperature of at least 125° C. The average value of the phase difference of the optical member is not more than 20 nm.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

Abstract: Provided is a light detecting device, including a first electrode and a third electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode and the third electrode, a second electrode formed on the photoelectric conversion layer, and an insulation film is disposed between the third electrode and the photoelectric conversion layer. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges.

Abstract: An endoscope operation section of the present invention includes an operation section having a second longitudinal axis extending in a substantially same direction as a first longitudinal axis of an insertion section, the operation section being configured to be grasped by an operator, a bending operation member, including an axis crossing the second longitudinal axis at an acute angle during nonoperation, and configured to bend the insertion section, a first pedestal section to which a suction operation member is attached, a second pedestal section in which a surface projecting further in the forward direction by a predetermined height than the first pedestal section is formed, the predetermined height being set to a higher position in the forward direction than a position of a suction tube connecting member of the suction operation member, and a pressing operation member provided on the surface of the second pedestal section and pressed and operated.

Abstract: A glutarimide resin contains repeating units represented by formula (1), formula (2), formula (3) and formula (4). R1 and R2 are each independently hydrogen or an alkyl group having 1 to 8 carbon atoms, and R3 and R4 are each independently hydrogen or an alkyl group having 1 to 8 carbon atoms. R5 and R6 are each independently hydrogen or an alkyl group having 1 to 8 carbon atoms, and R7 is an alkyl group having 1 to 18 carbon atoms, a cycloalkyl group having 3 to 12 carbon atoms, or a substituent containing an aromatic ring having 5 to 15 carbon atoms. R8 is hydrogen or an alkyl group having 1 to 8 carbon atoms, and R9 is an aryl group having 6 to 10 carbon atoms.

Abstract: A glutarimide resin contains repeating units of formula (1), wherein R1 and R2 are each independently hydrogen or an alkyl group having 1 to 8 carbon atoms; repeating units of formula (2), wherein R3 and R4 are each independently hydrogen or an alkyl group having 1 to 8 carbon atoms, and repeating units of formula (3), wherein R5 and R6 are each independently hydrogen or an alkyl group having 1 to 8 carbon atoms, and R7 is an alkyl group having 1 to 18 carbon atoms, a cycloalkyl group having 3 to 12 carbon atoms, or a substituent containing an aromatic ring having 5 to 15 carbon atoms. The glutarimide resin satisfies the following inequality: 3?M1+M2?20. M1 is the content (mol %) of the repeating units of the formula (1) and M2 is the content (mol %) of the repeating units of the formula (2).

Abstract: Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges. The detection results corresponds to one of light or temperature and the voltage of third electrode is controlled according to an output of a frame image obtained before exposure.

Abstract: The present technology relates to a solid-state imaging device capable of suppressing flare in a CSP-type solid-state imaging device having a cavityless structure, a method of manufacturing the same, and an electronic device. The solid-state imaging device includes: a semiconductor substrate in which a photoelectric conversion section is formed for each pixel; an on-chip lens formed on a light incident surface side of the semiconductor substrate; a light-transmissive substrate that protects the on-chip lens; and a bonding resin that bonds the light-transmissive substrate and the on-chip lens together. A first surface on the light incident surface side of the light-transmissive substrate is flat, and a second surface opposite to the first surface of the light-transmissive substrate has different thicknesses in a central region facing a pixel region of the semiconductor substrate and an outer peripheral region outside the central region.

Abstract: The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

Abstract: The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

Abstract: An endoscope according to an embodiment includes an elongated insertion section including a bending section configured to bend in at least an up-down direction by internally-disposed two or more wires being towed, an operation section including a grasping section, the operation section, a bending operation unit including a joystick for bending the bending section and provided in the operation section, two actuators respectively including turning shafts, the two turning shafts being internally disposed in the grasping section in a longitudinal direction of the grasping section, the two actuators being disposed side by side along a plane parallel to an operation direction of an operation member for bending the bending section in the up-down direction, and a conversion mechanism including a rotation torque transmission mechanism and a tensile force transmission mechanism, the conversion mechanism converting the rotation torque into the tensile force.

Abstract: Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges. The detection results corresponds to one of light or temperature and the voltage of third electrode is controlled according to an output of a frame image obtained before exposure.

Abstract: A bending operation mechanism of an endoscope includes a bending operation lever, a seal unit having a tubular member and an elastic member. The elastic member has a fixed part attached to an outer circumference of the tubular member in a circumferential manner along a longitudinal axis direction N of the tubular member. An extending part that extends from an outer circumference of the fixed part to the outside of the fixed part in a radial direction K into a shape of a circle substantially concentric with the fixed part. A region extends from the outer circumference of the fixed part would extend with a predetermined angle.

Abstract: The present disclosure relates to a solid-state image pickup device, a manufacturing method, and an electronic apparatus, which can obtain high charge transfer efficiency from a photoelectric conversion unit to a floating diffusion layer. The floating diffusion layer is arranged in a rectangular shape so as to surround a gate electrode of a vertical transistor whose groove portion is rectangular. A reset drain is formed so as to be adjacent to the floating diffusion layer through a reset gate. A potential of the floating diffusion layer is reset to the same potential as that of the reset drain by applying a predetermined voltage to the reset gate. It is possible to apply the present disclosure to, for example, a CMOS solid-state image pickup device used in an image pickup device such as a camera.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

Abstract: A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.

Abstract: A bending operation mechanism includes an operation lever, a wire pulling member, a pulling wire, a cylinder, and a pulley, and the pulley is disposed with a predetermined rotation shaft tilted so that an extended line of the predetermined rotation shaft intersects with the cylinder.