Abstract: A shock absorber for a crawler is disclosed. The shock absorber may have a coil spring to bias an idler wheel from a frame of the crawler. The shock absorber may also have an adjustment cylinder to adjust a bias force of the coil spring. The adjustment cylinder may have a flange projecting radially outward. The shock absorber may have a support member disposed circumferentially around at least a portion of the adjustment cylinder. The support member may have a spring bearing portion projecting radially outward. The shock absorber may have a retaining plate projecting radially from the adjustment cylinder. The retaining plate may be configured to prevent axial separation of the adjustment cylinder and the support member. The coil spring may be positioned on an outer peripheral side of the adjustment cylinder and the support member and disposed in abutting contact with the flange and the spring bearing portion.

Abstract: An analog-to-digital converter circuit having a simple design and capable of preventing an increase in surface area and other problems. An analog-to-digital converter circuit for converting an analog input signal to a digital quantity includes an analog-to-digital converter unit that converts analog input signals to pre-correction digital values, and a corrector unit that digitally corrects the pre-connection digital values output from the analog-to-digital converter unit. The corrector unit includes a weighting coefficient multiplier unit that outputs a post-correction digital value obtained by multiplying the weighting coefficients provided for each bit by each bit of the pre-correction digital value output from the A/D converter unit and summing them, and a weighting coefficient search unit that searches for weighting coefficients so as to minimize an error signal generated based on the post-correction digital value and an approximate value for the post-correction digital value.

Abstract: There is provided a semiconductor device using low electric power and a small area which can realize highly accurate calibration. The semiconductor device according to the embodiment includes an A/D conversion unit, and a hold signal generating circuit which is coupled to an input side of the A/D conversion unit, and has a hold period not less than two cycles of the A/D conversion unit. The hold signal generating circuit includes: an SC integrator including an input buffer coupled to the input side of the A/D conversion unit, and feedback capacitor coupled to an input and an output of the input buffer; and a logic circuit which compares an output signal of plural bits outputted from the A/D conversion unit with a first and a second threshold values, and outputs a control signal which controls polarity of the SC integrator according to a comparison result.

Abstract: An overhead image reading apparatus includes an image-capturing unit that captures an image of a medium to be read placed on a placement surface from above, a light source capable of irradiating the medium with light, and a brightness controller that gradually alters brightness of the light source at least when the light source is turned on or when the light source is turned off. The overhead image reading apparatus may gradually alter the brightness by duty control on current supplied to the light source. Or, the overhead image reading apparatus may gradually alter the brightness by controlling a current value supplied to the light source. Alternatively, the overhead image reading apparatus may include a variable aperture between the light source and the placement surface to gradually alter the brightness by controlling an opening area of the aperture.

Abstract: A semiconductor device in which an element region including at least an IGBT region is formed on a semiconductor substrate is presented. The IGBT region including: a collector layer; a drift layer; a body layer; a gate electrode placed inside a trench extending from the front surface of the semiconductor substrate to the drift layer; an emitter layer; and a contact layer having a higher impurity concentration than the body layer. In the semiconductor device, assuming that an x direction is a direction in which the trench extends along the front surface of the semiconductor substrate and that a y direction is a direction orthogonal to the x direction along the front surface of the semiconductor substrate, a distance from the contact layer to the emitter layer in the x direction is larger than a distance from the contact layer to the trench in the y direction.

Abstract: A differential signal is amplified by passive amplification which does not a reference of a common-mode voltage. At this time, the voltage of the differential signal is passive-amplified twice before carrying out a successive approximation type analog-digital conversion operation. The passive amplification is attained by providing a plurality of capacitances which carry out a sampling operation, and switching these connection relation by using switches. Without being accompanied by the increase of the consumed power and the chip size, an influence by the noise of s comparator is reduced to a half so that the effective resolution can be increased for one bit.

Abstract: A semiconductor device according to an aspect of the invention relates to an AD converter that converts a signal level of an analog signal into a digital value by using a comparator, and determines an amount of adjustment of an offset voltage of the comparator based on an offset determination result of the comparator obtained immediately after a least significant bit (LSB) of a digital value output as a conversion result is converted.

Abstract: A digital-correction-type A/D converter which is a charge sharing type and performing successive approximation is realized in a small area. The A/D converter is configured with an A/D conversion unit which is a charge sharing type and performing successive approximation, a digital correction unit which receives a digital output of the A/D conversion unit and performs digital correction to the digital output, and a holding unit which holds a test signal. A test signal of a common value from the holding unit is inputted into the A/D conversion unit in the first period and the second period. The A/D conversion correction coefficient for the digital correction unit is calculated on the basis of the digital correction result of the digital correction unit in the first period, and the digital correction result of the digital correction unit in the second period.

Abstract: To compensate for non-linearity of an AD conversion unit and non-linearity of a DA conversion unit in an electronic system including the DA conversion unit and the AD conversion unit, an electronic system includes an A/D conversion unit, a D/A conversion unit, an AD conversion compensation unit, a DA conversion compensation unit, and a calibration unit. During a calibration operation period, the calibration unit sets an operating characteristic of the AD conversion compensation unit and an operating characteristic of the DA conversion compensation unit. The operating characteristic of the AD conversion compensation unit set during the calibration operation period compensates for non-linearity of AD conversion of the A/D conversion unit. The operating characteristic of the DA conversion compensation unit set during the calibration operation period compensates for non-linearity of DA conversion of the D/A conversion unit.

Abstract: According to one aspect of an embodiment, an information display device includes a display unit that displays first content in a display region. The information display device includes a detection unit configured to detect a physical state of a terminal device. The information display device includes a display control unit configured to direct the display unit to display second new content in the display region while changing a display mode of the first content, on the basis of the detection result of the detection unit.

Abstract: A semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate is disclosed. The IGBT region includes: a body layer of a first conductivity type that is formed on a front surface of the semiconductor substrate; a body contact layer of the first conductivity type that is partially formed on a front surface of the body layer and has a higher impurity concentration of the first conductivity type than the body layer; an emitter layer of a second conductivity type that is partially formed on the front surface of the body layer; a drift layer; a collector layer; and a gate electrode. In the semiconductor device, a part of the body contact layer placed at a long distance from the diode region is made larger than a part of the body contact layer placed at a short distance from the diode region.

Abstract: There is provided a semiconductor device using low electric power and a small area which can realize highly accurate calibration. The semiconductor device according to the embodiment includes an A/D conversion unit, and a hold signal generating circuit which is coupled to an input side of the A/D conversion unit, and has a hold period not less than two cycles of the A/D conversion unit. The hold signal generating circuit includes: an SC integrator including an input buffer coupled to the input side of the A/D conversion unit, and feedback capacitor coupled to an input and an output of the input buffer; and a logic circuit which compares an output signal of plural bits outputted from the A/D conversion unit with a first and a second threshold values, and outputs a control signal which controls polarity of the SC integrator according to a comparison result.

Abstract: A semiconductor device in which an element region including at least an IGBT region is formed on a semiconductor substrate is presented. The IGBT region including: a collector layer; a drift layer; a body layer; a gate electrode placed inside a trench extending from the front surface of the semiconductor substrate to the drift layer; an emitter layer; and a contact layer having a higher impurity concentration than the body layer. In the semiconductor device, assuming that an x direction is a direction in which the trench extends along the front surface of the semiconductor substrate and that a y direction is a direction orthogonal to the x direction along the front surface of the semiconductor substrate, a distance from the contact layer to the emitter layer in the x direction is larger than a distance from the contact layer to the trench in the y direction.

Abstract: An analog-to-digital converter circuit having a simple design and capable of preventing an increase in surface area and other problems. An analog-to-digital converter circuit for converting an analog input signal to a digital quantity includes an analog-to-digital converter unit that converts analog input signals to pre-correction digital values, and a corrector unit that digitally corrects the pre-connection digital values output from the analog-to-digital converter unit. The corrector unit includes a weighting coefficient multiplier unit that outputs a post-correction digital value obtained by multiplying the weighting coefficients provided for each bit by each bit of the pre-correction digital value output from the A/D converter unit and summing them, and a weighting coefficient search unit that searches for weighting coefficients so as to minimize an error signal generated based on the post-correction digital value and an approximate value for the post-correction digital value.

Abstract: A semiconductor device according to an aspect of the invention relates to an AD converter that converts a signal level of an analog signal into a digital value by using a comparator, and determines an amount of adjustment of an offset voltage of the comparator based on an offset determination result of the comparator obtained immediately after a least significant bit (LSB) of a digital value output as a conversion result is converted.

Abstract: Provided is a protective film capable of satisfactorily suppressing warping of a polarizing plate. The protective film of the present invention, includes a first resin layer (11), an adhesion layer (13), and a second resin layer (12) in the stated order.

Abstract: The present application discloses a semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate. The IGBT region includes: a collector layer; an IGBT drift layer; a body layer; a gate electrode; and an emitter layer. The diode region includes: a cathode layer; a diode drift layer; an anode layer; a trench electrode; and an anode contact layer. The diode region is divided into unit diode regions by the gate electrode or the trench electrode. In a unit diode region adjacent to the IGBT region, when seen in a plan view of the front surface of the semiconductor substrate, the anode layer and the anode contact layer are mixedly placed, and the anode contact layer is placed at least in a location opposite to the emitter layer with the gate electrode interposed therebetween.

Abstract: When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region.

Abstract: In a honeycomb structure, a bonding material monolithically bonds a plurality of honeycomb segments. The bonding material contains crystalline anisotropic ceramic particle and a particulate pore former. The crystalline anisotropic ceramic particle is 20 mass % or less. An average particle diameter of the pore former in the bonding material is 80 to 200 ?m. In the case where a compressive Young's modulus of the bonding material is assumed as E (unit: MPa) and a shear strength of the bonding material is assumed as ? (unit: kPa), ?/E is 5 to 50.

Abstract: A digital-correction-type A/D converter which is a charge sharing type and performing successive approximation is realized in a small area. The A/D converter is configured with an A/D conversion unit which is a charge sharing type and performing successive approximation, a digital correction unit which receives a digital output of the A/D conversion unit and performs digital correction to the digital output, and a holding unit which holds a test signal. A test signal of a common value from the holding unit is inputted into the A/D conversion unit in the first period and the second period. The A/D conversion correction coefficient for the digital correction unit is calculated on the basis of the digital correction result of the digital correction unit in the first period, and the digital correction result of the digital correction unit in the second period.