Abstract: A MOSFET using a SiC substrate has a problem that a carbon-excess layer is formed on a surface by the application of mechanical stress due to thermal oxidation and the carbon-excess layer degrades mobility of channel carriers. In the invention, (1) a layer containing carbon-carbon bonds is removed; (2) a gate insulating film is formed by a deposition method; and (3) an interface between a crystal surface and the insulating film is subjected to an interface treatment at a low temperature for a short time. Due to this, the carbon-excess layer causing characteristic degradation is effectively eliminated, and at the same time, dangling bonds can be effectively eliminated by subjecting an oxide film and an oxynitride film to an interface treatment.

Abstract: A MOSFET using a SiC substrate has a problem that a carbon-excess layer is formed on a surface by the application of mechanical stress due to thermal oxidation and the carbon-excess layer degrades mobility of channel carriers. In the invention, (1) a layer containing carbon-carbon bonds is removed; (2) a gate insulating film is formed by a deposition method; and (3) an interface between a crystal surface and the insulating film is subjected to an interface treatment at a low temperature for a short time. Due to this, the carbon-excess layer causing characteristic degradation is effectively eliminated, and at the same time, dangling bonds can be effectively eliminated by subjecting an oxide film and an oxynitride film to an interface treatment.

Abstract: An industrial vehicle includes: an exhaust gas treatment device arranged in an engine room so as to be located above an engine, the exhaust gas treatment device including a pretreatment unit accommodating a diesel oxidation catalyst and extending in the forward/rearward direction, a selective catalytic reduction unit located adjacent to the pretreatment unit and extending in the forward/rearward direction, a connecting pipe including a mix portion, a first bent portion, and a second bent portion, the mix portion being located between the pretreatment unit and the selective catalytic reduction unit and extending in the forward/rearward direction, the first bent portion connecting the mix portion and an outlet of the pretreatment unit, the outlet being located close to a dividing wall, the second bent portion connecting the mix portion and an inlet of the selective catalytic reduction unit, the inlet being located far from the dividing wall, and a urea water injection device attached to the first bent portion o

Abstract: To solve a problem of realizing a large current and highly reliable power semiconductor device while shrinking a unit cell. A semiconductor device according to the present invention includes a plurality of p-type body regions extending in a first direction. The semiconductor device further includes: a JFET region formed to extend in the first direction between p-type body regions which are adjacent to each other in a second direction orthogonal to the first direction; an n+-type source region formed to extend in the first direction within a p-type body region and separate from an end side surface of the p-type body; and a channel region formed to extend in the first direction and in a top layer portion of a p-type body region between an end side surface of the p-type body region and an end side surface of an n+-type source region.

Abstract: An industrial vehicle includes: an exhaust gas treatment device arranged in an engine room so as to be located above an engine, the exhaust gas treatment device including a pretreatment unit accommodating a diesel oxidation catalyst and extending in the forward/rearward direction, a selective catalytic reduction unit located adjacent to the pretreatment unit and extending in the forward/rearward direction, a connecting pipe including a mix portion, a first bent portion, and a second bent portion, the mix portion being located between the pretreatment unit and the selective catalytic reduction unit and extending in the forward/rearward direction, the first bent portion connecting the mix portion and an outlet of the pretreatment unit, the outlet being located close to a dividing wall, the second bent portion connecting the mix portion and an inlet of the selective catalytic reduction unit, the inlet being located far from the dividing wall, and a urea water injection device attached to the first bent portion o

Abstract: A construction machine includes: a cover that covers an engine and a radiator; a radiator fan that is arranged at the rear of a vehicle body frame and discharges exhaust gas toward the rear of the vehicle body frame from the inner space of the cover; an injection device that injects a reducing agent into exhaust gas of the engine; a tank housing section that is arranged at one side of the vehicle body frame, includes an introduction section for introducing outside air, and houses a tank for storing the reducing agent injected by the injection device; and a connection section that is arranged in either the cover or the vehicle body frame and in the tank housing section, connects the inner space of the tank housing section and the inner space of the cover, and allows the outside air and the pipe to pass therethrough, the outside air having been introduced from the introduction section by the suction pressure of the radiator fan, the pipe supplying the reducing agent to the injection device.

Abstract: [Problem] The present invention aims to solve the problems that size of X-ray monochromater crystal assembly is restricted and the vacuum of the X-ray source and the vacuum of the analysis chamber cannot be separated.

Abstract: In order to provide a high-performance and reliable silicon carbide semiconductor device, in a silicon carbide semiconductor device including an n-type SiC epitaxial substrate, a p-type body layer, a p-type body layer potential fixing region and a nitrogen-introduced n-type first source region formed in the p-type body layer, an n-type second source region to which phosphorus which has a solid-solubility limit higher than that of nitrogen and is easily diffused is introduced is formed inside the nitrogen-introduced n-type first source region so as to be separated from both of the p-type body layer and the p-type body layer potential fixing region.

Abstract: A wheel loader includes: a driver's cab; an engine; a chassis, at sides of which tires are provided; an engine room in which the engine is mounted on the chassis, the engine room being provided behind the driver's cab; front portion structures respectively standing at left and right positions of a surface of the engine room, the surface being located at the driver's cab side; rear portion structures respectively standing at left and right positions of a surface of the engine room, the surface being opposite to the surface located at the driver's cab side; and a coupling structure that couples upper portions of the front portion structures to upper portions of the rear portion structures and forms a peripheral device installation space at an upper portion of the engine.

Abstract: In order to provide a high-performance and reliable silicon carbide semiconductor device, in a silicon carbide semiconductor device including an n-type SiC epitaxial substrate, a p-type body layer, a p-type body layer potential fixing region and a nitrogen-introduced n-type first source region formed in the p-type body layer, an n-type second source region to which phosphorus which has a solid-solubility limit higher than that of nitrogen and is easily diffused is introduced is formed inside the nitrogen-introduced n-type first source region so as to be separated from both of the p-type body layer and the p-type body layer potential fixing region.

Abstract: A MOSFET using a SiC substrate has a problem that a carbon-excess layer is formed on a surface by the application of mechanical stress due to thermal oxidation and the carbon-excess layer degrades mobility of channel carriers. In the invention, (1) a layer containing carbon-carbon bonds is removed; (2) a gate insulating film is formed by a deposition method; and (3) an interface between a crystal surface and the insulating film is subjected to an interface treatment at a low temperature for a short time. Due to this, the carbon-excess layer causing characteristic degradation is effectively eliminated, and at the same time, dangling bonds can be effectively eliminated by subjecting an oxide film and an oxynitride film to an interface treatment.

Abstract: A wheel loader includes: a driver's cab; an engine; a chassis, at sides of which tires are provided; an engine room in which the engine is mounted on the chassis, the engine room being provided behind the driver's cab; front portion structures respectively standing at left and right positions of a surface of the engine room, the surface being located at the driver's cab side; rear portion structures respectively standing at left and right positions of a surface of the engine room, the surface being opposite to the surface located at the driver's cab side; and a coupling structure that couples upper portions of the front portion structures to upper portions of the rear portion structures and forms a peripheral device installation space at an upper portion of the engine.

Abstract: [Object] The present invention provides an X-ray irradiation device capable of adjusting the energy of X-rays in a wide range, and an analysis device equipped with the X-ray irradiation device. [Solving Means] An X-ray irradiation device according to an embodiment of the present invention focuses X-rays emitted from an X-ray generation mechanism to a predetermined focal position by a focusing mechanism. The X-ray generation mechanism has a structure which generates a plurality of X-rays having different wavelengths. The focusing mechanism has a structure in which the plurality of X-rays are focused to the same focal position by focusing elements having diffraction characteristics suitable for the wavelengths of the respective X-rays generated by the X-ray generation mechanism.

Abstract: A display device includes a liquid crystal display panel 5, a touch panel 3 that is disposed on a display surface side of the liquid crystal display panel 5 and that has a touch operation area wider than a display area of the above-mentioned liquid crystal display panel 5, and a guard 4 or 4a that is disposed between an area 3a included in the touch operation area and corresponding to the display area, and an area 3b included in the touch operation area and corresponding to an outside of the display area, and that physically restricts an operation object which performs an operation on the above-mentioned touch operation area from moving between the areas.

Abstract: An information apparatus includes a liquid crystal display unit 6; a touch panel 3 that is mounted on the display surface of the liquid crystal display unit 6, that has a touch operation area wider than the display area of the liquid crystal display unit 6, and that has a specific operation handling section 3b which is formed on an area corresponding to an extra-display area of the touch operation area and which accepts an operation for a specific operation item of an information apparatus 1; a controller 7 that carries out control in a manner that causes the specific operation handling section 3b to accept an operation corresponding to a specific operation item of external equipment 2.

Abstract: A display device includes a touch panel 3 that has a touch operation area wider than an image display area, an operation member formed in an area 3b, other than the image display area, in the touch operation area, and an operation feeling generator 7 that provides an operation feeling for a pointing object which has operated the operation member.

Abstract: In order to provide a method for producing a SiC-MOSFET capable of increasing Vth without deteriorating channel mobility, before forming a gate insulation film, (a) silicon carbide substrate is oxidized by a low temperature oxidation method represented by plasma oxidation to form a silicon oxide film. Next, (b) the silicon oxide film is removed. After repeating the processes (a) and (b) once or more, (c) the gate insulation film is formed.

Abstract: A wheel loader includes: a driver's cab; an engine; a chassis, at sides of which tires are provided; an engine room in which the engine is mounted on the chassis, the engine room being provided behind the driver's cab; front portion structures respectively standing at left and right positions of a surface of the engine room, the surface being located at the driver's cab side; rear portion structures respectively standing at left and right positions of a surface of the engine room, the surface being opposite to the surface located at the driver's cab side; and a coupling structure that couples upper portions of the front portion structures to upper portions of the rear portion structures and forms a peripheral device installation space at an upper portion of the engine.

Abstract: [Problems] To provide a ceramic composition that retains a high insulation resistance after being fired in a reductive atmosphere to form a laminated body. [Means for Solving the Problem] A novel ceramic composition according to an embodiment of the invention include: (NaxK1-x)(NbyTa1-y)O3 (0?x?1.0, 0.3<y?1.0) as main ingredient and Li and F in an amount ranging from 0.1 to 10.0 mol, calculated on lithium fluoride basis, relative to 100 mol of the main ingredient.

Abstract: [Object] The present invention provides an X-ray irradiation device capable of adjusting the energy of X-rays in a wide range, and an analysis device equipped with the X-ray irradiation device. [Solving Means] An X-ray irradiation device according to an embodiment of the present invention focuses X-rays emitted from an X-ray generation mechanism to a predetermined focal position by a focusing mechanism. The X-ray generation mechanism has a structure which generates a plurality of X-rays having different wavelengths. The focusing mechanism has a structure in which the plurality of X-rays are focused to the same focal position by focusing elements having diffraction characteristics suitable for the wavelengths of the respective X-rays generated by the X-ray generation mechanism.