Abstract: A three-dimensional filter includes a pair of superconductor films opposed to each other, and a three-dimensional resonator made of dielectric and situated between the superconductor films, wherein one of the superconductor films is movable relative to the three-dimensional resonator.

Abstract: A semiconductor device has high reliability which suppresses a temperature rise of a set housing within an allowable range, and avoids an effect on a wiring on a package substrate due to thermal expansion of a heat dissipating member. The semiconductor device includes a semiconductor element, a package substrate, and a heat dissipating member. A first main surface of the semiconductor element faces an element-mounting surface of the package substrate and is connected to the package substrate. A main surface part of the heat dissipating member contacts a second main surface which is a back surface of first main surface of semiconductor element. A bonding part around a periphery of the main surface part is bonded to a bonding area of the element-mounting surface of the package substrate. A wiring on the package substrate is arranged at a portion other than the element-mounting surface, in a region of the bonding area.

Abstract: The present invention relates to an agent for improving renal dysfunction comprising as an active ingredient a compound represented by the following formula (1): wherein each R1, R2, and R3 represents a hydrogen atom or a methyl group, and X represents a linear or branched alkylene or alkenylene group having 10 to 28 carbon atoms.

Abstract: The semiconductor device includes a substrate, a first semiconductor element, a second semiconductor element, a first heat sink and a second heat sink. The first and the second semiconductor elements are provided on the substrate. The maximum power consumption of the first semiconductor element is lower than that of the second semiconductor element. The first heat sink is fixed to the first semiconductor element. The second heat sink is fixed to the second semiconductor element. The first heat sink is spaced apart from the second heat sink.

Abstract: A contactless communication medium includes: a base material made of an insulating material; an antenna coil portion formed by winding a conductor in a plane on the base material; a capacitor connected to the antenna coil portion; a communication processing section connected to the antenna coil portion and the capacitor to perform a contactless communication process; and a metal pattern having a predetermined area and disposed in a region surrounded by the antenna coil portion, the metal pattern being not electrically connected to the antenna coil portion or the capacitor.

Abstract: A contactless communication medium includes a base made of an insulating material, an antenna coil section including a conductor wound in a planar shape on the base, an inductance adjusting conductor pattern that is connected in parallel to a part of the conductor in the antenna coil section, and is placed on the base, a capacitor connected to the antenna coil section, and a communication processing section that is connected to the antenna coil section and the capacitor to perform contactless communication processing.

Abstract: A radio receiver includes a down-converter 110 for receiving a radio multiplexed signal containing a first signal and a second signal, multiplying the first signal and the second signal by a mixer 104 to thereby down-convert the radio multiplexed signal and generate an intermediate frequency signal 5e. The mixer 104 has a control section for controlling an operating bias of the mixer 104 in response to a signal strength of at least either one of the first signal or the second signal. Thus, the dynamic range of the mixer can be widened so that stable image characteristics can be obtained over a wide range of transmission distance.

Abstract: The semiconductor device includes a substrate, a first semiconductor element, a second semiconductor element, a first heat sink and a second heat sink. The first and the second semiconductor elements are provided on the substrate. The maximum power consumption of the first semiconductor element is lower than that of the second semiconductor element. The first heat sink is fixed to the first semiconductor element. The second heat sink is fixed to the second semiconductor element. The first heat sink is spaced apart from the second heat sink.

Abstract: The present invention is to provide a semiconductor memory device capable of providing excellent storage properties, scaling and high integration and a method of fabricating the same. A semiconductor memory device has a multiferroic film exhibiting ferroelectricity and ferromagnetism, a channel region on an interface of a semiconductor substrate below the multiferroic film, source and drain regions formed on both sides of the channel region, a gate electrode (data write electrode) applying gate voltage to the multiferroic film to write data in such a way that the orientation of magnetization is changed as corresponding to the orientation of dielectric polarization, and source and drain electrodes (data read electrodes) that read data based on a deviation in a flow of the carrier, the deviation caused by applying the Lorentz force to the carrier flowing in the channel region from a magnetic field occurring in the channel region because of magnetization.

Abstract: The semiconductor device includes a substrate, a first semiconductor element, a second semiconductor element, a first heat sink and a second heat sink. The first and the second semiconductor elements are provided on the substrate. The maximum power consumption of the first semiconductor element is lower than that of the second semiconductor element. The first heat sink is fixed to the first semiconductor element. The second heat sink is fixed to the second semiconductor element. The first heat sink is spaced apart from the second heat sink.

Abstract: A radio receiver includes a down-converter 110 for receiving a radio multiplexed signal containing a first signal and a second signal, multiplying the first signal and the second signal by a mixer 104 to thereby down-convert the radio multiplexed signal and generate an intermediate frequency signal 5e. The mixer 104 has a control section for controlling an operating bias of the mixer 104 in response to a signal strength of at least either one of the first signal or the second signal. Thus, the dynamic range of the mixer can be widened so that stable image characteristics can be obtained over a wide range of transmission distance.

Abstract: A paper money processor according to the present invention includes a transaction slot where paper money is at least either inserted or dispensed with an orientation such that one of lengthwise ends of the paper money is positioned at a side of a first lengthwise end of the transaction slot. The transaction slot includes a main opening which opens on a second lengthwise end of the transaction slot, and a lateral opening which is continuous with the main opening, and opens on a first widthwise end of the transaction slot.

Abstract: A millimeter wave transceiving system 100 for transmitting and receiving a millimeter wave includes a transmitting apparatus 1 for transmitting a millimeter wave, a reflecting plate 41 for reflecting a millimeter wave transmitted from the transmitting apparatus 1, and a receiving apparatus 2 for receiving a millimeter wave reflected by the reflecting plate 41. The reflecting plate 41 includes a metal plate, a metal sheet, or a metal film, as a reflecting surface 43 for reflecting a millimeter wave. This makes it possible to realize a millimeter wave transceiving system which allows an easy installation.

Abstract: A semiconductor device 1 includes a substrate 10, a semiconductor chip 20 (first semiconductor chip), semiconductor chips 30 (second semiconductor chips) and a heat sink 40. Semiconductor chips 20 and 30 are mounted on the substrate 10. The level of the top surface of the semiconductor chip 20 on the substrate 10 is lower than the level of the top surface of the semiconductor chip 30. A heat sink 40 is fixed to the semiconductor chip 20. Among the semiconductor chip 20 and the semiconductor chips 30, only above the semiconductor chip 20 is provided with the heat sink 40.

Abstract: A filter includes a dielectric substrate; an electrode layer continuously formed covering a first side of the dielectric substrate; a disk-shaped electrode pattern provided on a second side of the dielectric substrate, the disk-shaped electrode pattern and the electrode layer holding the dielectric substrate therebetween; a ground slot having an opening that is formed asymmetrically with respect to the center of a circular area included in the electrode layer and exposes the dielectric substrate, the circular area and the disk-shaped electrode pattern holding the dielectric substrate therebetween.

Abstract: A high-pressure discharge lamp lighting device includes: a power converter circuit which includes a plurality of switching elements and an inductance element, converts an input from a DC power supply, and supplies a rectangular wave AC output to a high-pressure discharge lamp; and a control circuit which controls the switching elements of the power converter circuit. The control circuit performs first lighting control in which the switching elements of the power converter circuit are controlled in order to supply a current to a peak value for each switching cycle, and performs second lighting control in which desired power is supplied during steadily lighting state of the high-pressure discharge lamp; and the first lighting control and the second lighting control are switched over in response to a lighting state of the high-pressure discharge lamp.

Abstract: A three-dimensional filter includes a pair of superconductor films opposed to each other, and a three-dimensional resonator made of dielectric and situated between the superconductor films, wherein one of the superconductor films is movable relative to the three-dimensional resonator.

Abstract: An optical waveguide is formed of a stack of electro-optic effect films. A stress-relief layer is formed between a substrate and the optical waveguide. The stress-relief layer is comprised of a metal material having a thermal expansion coefficient of 10×10?6/° C. or higher, for example, a metal material whose major component is one of Au, Ag, and an alloy thereof, and has a function of relieving a binding force to the optical waveguide ascribable to the substrate.