Abstract: A semiconductor device having good radiation performance is provided. The semiconductor device is provided with a substrate having one surface in which external connection terminals are formed. The semiconductor device includes the substrate having a wiring layer; a semiconductor chip which is mounted on the one surface of the substrate; the external connection terminals formed on the one surface of the substrate so as to be located along the perimeter of the semiconductor chip; and a conductive part formed on the one surface and having a melting point higher than that of the external connection terminals and electrically insulated from the wiring layer.

Abstract: A core layer of an optical waveguide is grown as a film comprised of an electro-optic material with a rhombohedral structure and grown above a substrate with (100) crystal orientation on a major face.

Abstract: The present invention is to provide a semiconductor memory device capable of providing excellent storage properties, scaling and high integration and a method of fabricating the same. A semiconductor memory device has a multiferroic film exhibiting ferroelectricity and ferromagnetism, a channel region on an interface of a semiconductor substrate below the multiferroic film, source and drain regions formed on both sides of the channel region, a gate electrode (data write electrode) applying gate voltage to the multiferroic film to write data in such a way that the orientation of magnetization is changed as corresponding to the orientation of dielectric polarization, and source and drain electrodes (data read electrodes) that read data based on a deviation in a flow of the carrier, the deviation caused by applying the Lorentz force to the carrier flowing in the channel region from a magnetic field occurring in the channel region because of magnetization.

Abstract: A superconducting disk resonator is disclosed that includes a dielectric base substrate having dielectric anisotropy, a disk type superconducting resonator pattern that is formed on the dielectric base substrate with superconducting material, and a pair of signal input/output lines arranged on the dielectric base substrate and extending in a straight line towards the disk type superconducting resonator pattern. The direction of dielectric anisotropy of the dielectric base substrate is oriented at ±90 degrees with respect to an extending direction of the pair of signal input/output lines.

Abstract: The semiconductor device includes a substrate, a first semiconductor element, a second semiconductor element, a first heat sink and a second heat sink. The first and the second semiconductor elements are provided on the substrate. The maximum power consumption of the first semiconductor element is lower than that of the second semiconductor element. The first heat sink is fixed to the first semiconductor element. The second heat sink is fixed to the second semiconductor element. The first heat sink is spaced apart from the second heat sink.

Abstract: A superconducting filter device includes a dielectric base, a resonator pattern formed of a superconducting material on the dielectric base, an anisotropic dielectric or magnetic body positioned over the resonator pattern, and an angle adjusting mechanism for changing a horizontal angle of the anisotropic dielectric or magnetic body with respect to an input signal.

Abstract: The present invention relates to an agent for improving renal dysfunction comprising as an active ingredient a compound represented by the following formula (1): wherein each R1, R2, and R3 represents a hydrogen atom or a methyl group, and X represents a linear or branched alkylene or alkenylene group having 10 to 28 carbon atoms.

Abstract: In an optical element aimed at readily and accurately controlling a refractive index of an electrooptic effect film, and at making the device adaptive to further downsizing, a voltage control unit controls the refractive index of light in an optical waveguide between two values of a first voltage and a second voltage bounded at a predetermined voltage which corresponds to an anti-ferroelectric phase transition point, based on a fact that the refractive index of a core layer of the optical waveguide largely varies in a digital manner at the predetermined voltage, but is kept almost constant thereunder and thereabove.

Abstract: An optical deflection element is composed of a substrate 1 and an optical waveguide 2 formed on the substrate 1 and made of an electrooptic material. The optical waveguide 2 is composed of a lower clad layer 3, an upper clad layer 5, and a core layer 4, in which an optical path is formed, held between the lower clad layer 3 and an upper clad layer 5. The lower and upper clad layers 3, 5 are formed using a conductive oxide as a material, also serving as lower and upper electrodes to apply voltage to the core layer 4.

Abstract: A clad having material showing a magnetic resistance effect is formed on a substrate and a PLZT core is formed on the clad. The core is patterned in a Y shape and an input side optical waveguide and output side optical waveguides are formed of the clad and the core. Coils are placed on the output side optical waveguides and an intensity of light, which propagates through an optical waveguide, is controlled by a magnetic field generated by these coils to switch an optical signal.

Abstract: A radio receiver includes a down-converter 110 for receiving a radio multiplexed signal containing a first signal and a second signal, multiplying the first signal and the second signal by a mixer 104 to thereby down-convert the radio multiplexed signal and generate an intermediate frequency signal 5e. The mixer 104 has a control section for controlling an operating bias of the mixer 104 in response to a signal strength of at least either one of the first signal or the second signal. Thus, the dynamic range of the mixer can be widened so that stable image characteristics can be obtained over a wide range of transmission distance.

Abstract: A semiconductor device 1 includes a substrate 10, a semiconductor chip 20 (first semiconductor chip), semiconductor chips 30 (second semiconductor chips) and a heat sink 40. Semiconductor chips 20 and 30 are mounted on the substrate 10. The level of the top surface of the semiconductor chip 20 on the substrate 10 is lower than the level of the top surface of the semiconductor chip 30. A heat sink 40 is fixed to the semiconductor chip 20. Among the semiconductor chip 20 and the semiconductor chips 30, only above the semiconductor chip 20 is provided with the heat sink 40.

Abstract: An object of the present invention is to allow the three primary colors of light (red, green, blue) to be emitted, and particularly to allow blue light to be emitted clearly and in a stable manner at a low voltage. An amorphous SiOx film 2 consisting of a mixture of silicon atoms and oxygen atoms is formed on a semiconductor substrate 1. The result is heat treated in an inert gas to form the silicon atoms into nanosilicon 4a of about 3.0 nm or less. The result is subjected to hydrofluoric acid aqueous solution treatment 5 and thermal oxidation treatment 6. Any of the three primary colors of light, particularly blue, can be emitted at a low operating voltage 7 at room temperature.

Abstract: In an optical element aimed at readily and accurately controlling a refractive index of an electrooptic effect film, and at making the device adaptive to further downsizing, a voltage control unit 6 controls refractive index of light in an optical waveguide 4 between two values of a first voltage and a second voltage bounded at a predetermined voltage which corresponds to an anti-ferroelectric phase transition point, based on a fact that the refractive index of a core layer 12 of the optical waveguide 4 largely varies in a digital manner at the predetermined voltage, but is kept almost constant thereunder and thereabove.

Abstract: A core layer of an optical waveguide is grown as a film comprised of an electro-optic material with a rhombohedral structure and grown above a substrate with (100) crystal orientation on a major face.

Abstract: An optical waveguide is formed of a stack of electro-optic effect films. A stress-relief layer is formed between a substrate and the optical waveguide. The stress-relief layer is comprised of a metal material having a thermal expansion coefficient of 10×10?6/° C. or higher, for example, a metal material whose major component is one of Au, Ag, and an alloy thereof, and has a function of relieving a binding force to the optical waveguide ascribable to the substrate.

Abstract: An object of the present invention is to allow the three primary colors of light (red, green, blue) to be emitted, and particularly to allow blue light to be emitted clearly and in a stable manner at a low voltage. An amorphous SiOx film 2 consisting of a mixture of silicon atoms and oxygen atoms is formed on a semiconductor substrate 1. The result is heat treated in an inert gas to form the silicon atoms into nanosilicon 4a of about 3.0 nm or less. The result is subjected to hydrofluoric acid aqueous solution treatment 5 and thermal oxidation treatment 6. Any of the three primary colors of light, particularly blue, can be emitted at a low operating voltage 7 at room temperature.