Abstract: A semiconductor device P includes a die pad 20, a semiconductor element 30 which is loaded on the die pad 20, and a sealing resin 40. A plurality of electrically conductive portions 10 each having a layered structure including a metal foil 1 comprising copper or a copper alloy, and electrically conductive portion plating layers 2 provided at both upper and lower ends of the metal foil 1 are arranged around the die pad 20. The die pad 20 has a lower die pad plating layer 2b, and the semiconductor element 30 is loaded on the die pad 20 comprising such a die pad plating layer 2b. Electrodes 30a provided on the semiconductor element 30 are electrically connected with top ends of the electrically conductive portions 10 via wires 3, respectively. The lower electrically conductive portion plating layers 2 of the electrically conductive portions 10 and the die pad plating layer 2b of the die pad 20 are exposed outside from the sealing resin 40 on their back faces.

Abstract: A method for producing an epoxy resin composition for semiconductor encapsulation, which does not cause void generation and the like and is excellent in reliability. A method for producing an epoxy resin composition for semiconductor encapsulation, which contains the following components (A) to (C): (A) an epoxy resin, (B) a phenol resin, and (C) a hardening accelerator, which comprises mixing the whole or a part of the components excluding the component (A) among the components containing the components (A) to (C) in advance under a reduced pressure of from 1.333 to 66.65 kPa and under a heating condition of from 100 to 230° C., and then mixing the component (A) and remaining components with the resulting mixture.

Abstract: An epoxy resin composition for semiconductor encapsulation in producing surface mount lead-less thin semiconductor devices. The epoxy resin composition for surface mount lead-less semiconductor device encapsulation which device comprising an encapsulating resin layer and, encapsulated therein, a substrate, a semiconductor element mounted on the substrate, two or more conductive parts disposed around the semiconductor element, and wires which electrically connect electrodes of the semiconductor element to the conductive parts, wherein the bottom face of the substrate and the bottom face of each conductive part are exposed without being encapsulated in the encapsulating resin layer, and the epoxy resin composition used for forming the encapsulating resin layer has the following properties (?) and (?): (?) a melt viscosity of 2-10 Pa.s at 175° C.; and (?) a flexural strength of cured state of 130 MPa or higher at ordinary temperature.

Abstract: An adhesive film for manufacturing a semiconductor device comprising a thermosetting adhesive layer and a heat-resistant backing layer, wherein the adhesive film is applied to a method for manufacturing a semiconductor device, comprising the steps of (a) embedding at least a part of a conductor in the adhesive film to form a conductor adhered thereto; (b) mounting a semiconductor chip on the conductor; (c) connecting the semiconductor chip to the conductor; (d) encapsulating the semiconductor chip with an encapsulation resin; and (e) removing the adhesive film therefrom. The adhesive film can be suitably used for manufacturing a semiconductor device having a so-called standoff wherein a part of a conductor is projecting from an encapsulation resin.

Abstract: A semiconductor device fabricating method comprises a substrate forming step of forming a plurality of separate conductive pads 20 on an adhesive layer included in an adhesive sheet 50, and a semiconductor chip mounting step of bonding semiconductor chips to the adhesive sheet 50 with surfaces thereof not provided with any electrodes in contact with the adhesive sheet 50, and electrically connecting electrodes 11 formed on the semiconductor chips 10 and upper parts of the conductive pads 20 with wires 30. The semiconductor chips 10, the wires 30 and the conductive pads 20 are sealed in a sealing resin molding 40, and then the adhesive sheet 50 is separated from the sealing resin molding 40. Each of the conductive pads 20 has a reduced part 20b, and a jutting part 20a jutting out from the reduced part 20b. The conductive pads 20 having such construction can be firmly bonded to the sealing resin molding 40.

Abstract: A semiconductor device fabricating method comprises a substrate forming step of forming a plurality of separate conductive pads 20 on an adhesive layer included in an adhesive sheet 50, and a semiconductor chip mounting step of bonding semiconductor chips to the adhesive sheet 50 with surfaces thereof not provided with any electrodes in contact with the adhesive sheet 50, and electrically connecting electrodes 11 formed on the semiconductor chips 10 and upper parts of the conductive pads 20 with wires 30. The semiconductor chips 10, the wires 30 and the conductive pads 20 are sealed in a sealing resin molding 40, and then the adhesive sheet 50 is separated from the sealing resin molding 40. Each of the conductive pads 20 has a reduced part 20b, and a jutting part 20a jutting out from the reduced part 20b. The conductive pads 20 having such construction can be firmly bonded to the sealing resin molding 40.

Abstract: An epoxy resin composition for semiconductor encapsulation in producing surface mount lead-less thin semiconductor devices. The epoxy resin composition for surface mount lead-less semiconductor device encapsulation which device comprising an encapsulating resin layer and, encapsulated therein, a substrate, a semiconductor element mounted on the substrate, two or more conductive parts disposed around the semiconductor element, and wires which electrically connect electrodes of the semiconductor element to the conductive parts, wherein the bottom face of the substrate and the bottom face of each conductive part are exposed without being encapsulated in the encapsulating resin layer, and the epoxy resin composition used for forming the encapsulating resin layer has the following properties (?) and (?): (?) a melt viscosity of 2-10 Pa.s at 175° C.; and (?) a flexural strength of cured state of 130 MPa or higher at ordinary temperature.

Abstract: A method for producing an epoxy resin composition for semiconductor encapsulation, which does not cause void generation and the like and is excellent in reliability. A method for producing an epoxy resin composition for semiconductor encapsulation, which contains the following components (A) to (C): (A) an epoxy resin, (B) a phenol resin, and (C) a hardening accelerator, which comprises mixing the whole or a part of the components excluding the component (A) among the components containing the components (A) to (C) in advance under a reduced pressure of from 1.333 to 66.65 kPa and under a heating condition of from 100 to 230° C., and then mixing the component (A) and remaining components with the resulting mixture.

Abstract: An adhesive film for manufacturing a semiconductor device comprising a thermosetting adhesive layer and a heat-resistant backing layer, wherein the adhesive film is applied to a method for manufacturing a semiconductor device, comprising the steps of (a) embedding at least a part of a conductor in the adhesive film to form a conductor adhered thereto; (b) mounting a semiconductor chip on the conductor; (c) connecting the semiconductor chip to the conductor; (d) encapsulating the semiconductor chip with an encapsulation resin; and (e) removing the adhesive film therefrom. The adhesive film can be suitably used for manufacturing a semiconductor device having a so-called standoff wherein a part of a conductor is projecting from an encapsulation resin.

Abstract: A semiconductor device fabricating method comprises a substrate forming step of forming a plurality of separate conductive pads 20 on an adhesive layer included in an adhesive sheet 50, and a semiconductor chip mounting step of bonding semiconductor chips to the adhesive sheet 50 with surfaces thereof not provided with any electrodes in contact with the adhesive sheet 50, and electrically connecting electrodes 11 formed on the semiconductor chips 10 and upper parts of the conductive pads 20 with wires 30. The semiconductor chips 10, the wires 30 and the conductive pads 20 are sealed in a sealing resin molding 40, and then the adhesive sheet 50 is separated from the sealing resin molding 40. Each of the conductive pads 20 has a reduced part 20b, and a jutting part 20a jutting out from the reduced part 20b. The conductive pads 20 having such construction can be firmly bonded to the sealing resin molding 40.

Abstract: A capacitance type moisture sensor having the capability of accurately detecting amounts of water is provided. This sensor has a sensor housing having an electrically-insulating wall, a pair of electrodes disposed on the sensor housing, and a circuit unit. An outer surface of the electrically-insulating wall faces a space where the amounts of water should be detected. On an inner surface of the electrically-insulating wall, at least one of the electrodes is formed. An electric field developed between the electrodes is defined as a moisture detecting region. The circuit unit includes a capacitance detecting circuit for detecting a capacitance value between the electrodes, which changes in response to the amounts of water in the moisture detecting region, and an output circuit for providing an electrical signal corresponding toe the amounts of water according the capacitance value detected by the capacitance detecting circuit.

Abstract: A capacitance type moisture sensor having the capability of accurately detecting amounts of water is provided. This sensor has a sensor housing having an electrically-insulating wall, a pair of electrodes disposed on the sensor housing, and a circuit unit. An outer surface of the electrically-insulating wall faces a space where the amounts of water should be detected. On an inner surface of the electrically-insulating wall, at least one of the electrodes is formed. An electric field developed between the electrodes is defined as a moisture detecting region. The circuit unit includes a capacitance detecting circuit for detecting a capacitance value between the electrodes, which changes in response to the amounts of water in the moisture detecting region, and an output circuit for providing an electrical signal corresponding toe the amounts of water according the capacitance value detected by the capacitance detecting circuit.

Abstract: A fluorine-containing benzonitrile derivative (formula 1) is subjected to a reduction reaction to obtain a fluorine-containing benzylamine derivative (formula 2), and the amino group in said fluorine-containing benzylamine derivative is replaced with a hydroxyl group to obtain a fluorine-containing benzyl alcohol derivative (formula 3): wherein X is a halogen atom, when m is an integer of 2 or more, each X may be the same or different, and m is an integer of from 0 to 4.

Abstract: A capacitance type moisture sensor having the capability of accurately detecting amounts of water is provided. This sensor comprises a sensor housing having an electrically-insulating wall, a pair of electrodes disposed on the sensor housing, and a circuit unit. An outer surface of the electrically-insulating wall faces a space where the amounts of water should be detected. On an inner surface of the electrically-insulating wall, at least one of the electrodes is formed. An electric field developed between the electrodes is defined as a moisture detecting region. The circuit unit includes a capacitance detecting circuit for detecting a capacitance value between the electrodes, which changes in response to the amounts of water in the moisture detecting region, and an output circuit for providing an electrical signal corresponding to the amounts of water according to the capacitance value detected by the capacitance detecting circuit.