Abstract: An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.

Abstract: An inorganic light emitting layer having a plurality of light emitting cores, each core having a semiconductor material that emits light in response to recombination of holes and electrons, each such light emitting core defining a first bandgap; a plurality of semiconductor shells formed respectively about the light emitting cores to form core/shell quantum dots, each such semiconductor shell having a second bandgap wider than the first bandgap; and a semiconductor matrix connected to the semiconductor shells to provide a conductive path through the semiconductor matrix and to each such semiconductor shell and its corresponding light emitting core so as to permit the recombination of holes and electrons.

Abstract: A doped semiconductor junction for use in an electronic device and a method for making such junction is disclosed. The junction includes a first polycrystalline semiconductor layer doped with donors or acceptors over a substrate such that the first doped semiconductor layer has a first polarity, the first layer including fused semiconductor nanoparticles; and a second layer in contact with the first semiconductor layer over a substrate to form the semiconductor junction.

Abstract: An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.

Abstract: A method is disclosed for making a doped semiconductor transport layer for use in an electronic device comprising: growing in-situ doped semiconductor nanoparticles in a colloidal solution; depositing the in-situ doped semiconductor nanoparticles on a surface; and annealing the deposited in-situ doped semiconductor nanoparticles so that the organic ligands boil off the surface of the in-situ doped semiconductor nanoparticles.

Abstract: A method of making an inorganic light emitting layer includes combining a solvent for semiconductor nanoparticle growth, a solution of core/shell quantum dots, and semiconductor nanoparticle precursor(s); growing semiconductor nanoparticles to form a crude solution of core/shell quantum dots, semiconductor nanoparticles, and semiconductor nanoparticles that are connected to the core/shell quantum dots; forming a single colloidal dispersion of core/shell quantum dots, semiconductor nanoparticles, and semiconductor nanoparticles that are connected to the core/shell quantum dots; depositing the colloidal dispersion to form a film; and annealing the film to form the inorganic light emitting layer.

Abstract: An inorganic light emitting device including a transparent substrate; a first electrode; a second electrode opposed to the first electrode; a polycrystalline inorganic light emitting layer including core/shell quantum dots within an inorganic semiconductor matrix and, wherein the first electrode is transparent and formed on the transparent substrate, the polycrystalline inorganic light emitting layer is formed over the first electrode, and the second electrode is formed over the light emitting layer.

Abstract: A doped semiconductor junction for use in an electronic device and a method for making such junction is disclosed. The junction includes a first polycrystalline semiconductor layer doped with donors or acceptors over a substrate such that the first doped semiconductor layer has a first polarity, the first layer including fused semiconductor nanoparticles; and a second layer in contact with the first semiconductor layer over a substrate to form the semiconductor junction.

Abstract: A method is disclosed for making a doped semiconductor transport layer for use in an electronic device comprising: growing in-situ doped semiconductor nanoparticles in a colloidal solution; depositing the in-situ doped semiconductor nanoparticles on a surface; and annealing the deposited in-situ doped semiconductor nanoparticles so that the organic ligands boil off the surface of the in-situ doped semiconductor nanoparticles.

Abstract: The invention includes a process for forming a laser pixel array useful with a pump-beam, comprising: a) forming a layer containing a formamide of an amino dye compound on a support wherein the layer absorbs light outside the laser wavelength and predominantly outside the pump-beam wavelength range; and b) subjecting the layer to UV radiation in the areas of the layer where it is desired to be free of pixels for a time sufficient to shift the absorption envelope of the areas into the pump-beam wavelength range. The invention also provides for unimolecularly forming an image or an information record and a composition of matter. The invention provides methods for forming filters, images or information records having a smooth surface and in particular for forming a pixel region pattern for use with an Organic VCSEL that would ease manufacturing.

Abstract: A method of making an ex-situ doped semiconductor transport layer for use in an electronic device includes: growing a first set of semiconductor nanoparticles having surface organic ligands in a colloidal solution; growing a second set of dopant material nanoparticles having surface organic ligands in a colloidal solution; depositing a mixture of the first set of semiconductor nanoparticles and the second set of dopant material nanoparticles on a surface, wherein there are more semiconductor nanoparticles than dopant material nanoparticles; performing a first anneal of the deposited mixture of nanoparticles so that the organic ligands boil off the surfaces of the first and second set of nanoparticles; performing a second anneal of the deposited mixture so that the semiconductor nanoparticles fuse to form a continuous semiconductor layer and the dopant material atoms diffuse out from the dopant material nanoparticles and into the continuous semiconductor layer.

Abstract: A display apparatus for producing colored pixelated light includes a backlight unit for providing a pump-beam light. The apparatus also includes a microcavity light-producing array responsive to pump-beam light and having pixels wherein each pixel including a transparent substrate, a bottom dielectric stack reflective to light over a predetermined range of wavelengths, an active region responsive to pump-beam light for producing display light, and a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths. The apparatus further includes a light shutter for permitting selected display light from the microcavity light-producing array to pass therethrough, a polarizing layer disposed between the microcavity light-producing array and the light shutter, and a beam expander disposed over the light shutter for increasing the angular cone of view of the display light.

Abstract: A storage phosphor imaging system comprising: a source for producing stimulating radiation directed to a storage phosphor storing a latent image; a resonant microcavity converter for converting emitted radiation from the storage phosphor to radiation at a longer wavelength than the emitted radiation but with an angular intensity distribution that is substantially narrower than a Lambertian distribution; and a detector for detecting the longer wavelength radiation.

Abstract: A display apparatus for producing colored pixelated light includes a backlight unit for producing pump-beam light and a vertical cavity laser array device including a structure for modulating the properties of the device at spaced locations so as to provide an array of spaced laser pixels which have higher net gain than the interpixel regions, and an active region which includes portions for producing different colored light in response to the pump-beam light. The apparatus also includes a light shutter and a beam expander disposed over the light shutter for increasing the angular cone of view of the selected colored light.

Abstract: A tuned OLED device includes a microcavity structure including a light-emitting layer for producing light, a semitransparent reflector, and a reflector layer disposed on opposite sides of the light-emitting layer, the microcavity structure enhancing on-axis light produced from the light-emitting layer in at least one particular wavelength to produce a desired on-axis viewed color while not substantially enhancing on-axis other wavelengths of such light; and a layer including a color change medium which is responsive to wavelengths of light shorter than the particular wavelength by absorbing such shorter wavelengths of light and emitting light corresponding in color to the particular wavelength, thereby improving the color of the light produced by the OLED device when viewed in an off-axis direction.

Abstract: A display apparatus for producing colored pixelated light includes a backlight unit for producing pump-beam light and a vertical cavity laser array device including a structure for modulating the properties of the device at spaced locations so as to provide an array of spaced laser pixels which have higher net gain than the interpixel regions, and an active region which produces blue light in response to the pump-beam light. The apparatus also includes a light shutter and a color conversion layer including different portions, where selected different portions in response to blue light produce a different colored light and being adapted to increase the angular cone of view of the selected colored light.

Abstract: A vertical cavity laser array device including a substrate, top and bottom dielectric stacks, and an active region for producing laser light. The active region includes one or more periodic gain region(s) and spacer layers disposed on either side of the periodic gain region(s) and arranged so that the periodic gain region(s) is aligned with the antinodes of the device's standing wave electromagnetic field. A structure is provided for modulating the properties of the periodic gain region(s) at spaced locations so as to provide an array of spaced laser pixels which have higher net gain than the interpixel regions; and the spaced laser pixels having the same or different sizes and the spacings between pixels having the same or different lengths to cause the output of the vertical cavity laser array device to produce single or multimode laser output.

Abstract: A method of making an organic vertical cavity laser array device includes providing a substrate and a bottom dielectric stack reflective to light over a predetermined range of wavelengths and being disposed over the substrate; forming an etched region in the top surface of the bottom dielectric stack to define an array of spaced laser pixels which have higher reflectance than the interpixel regions so that the array emits laser light; and forming a planarization layer over the etched bottom dielectric stack. The method also includes forming an active region over the planarization layer for producing laser light; and forming a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths.

Abstract: A system for mechanically tuning optical wavelengths emitted from an organic laser cavity device, that includes: a multi-layered film structure, wherein the multi-layered film structure is pumped by an incoherent source of photons; and a micro-electromechanical mirror assembly proximate to the multi-layered film structure, wherein the micro-electromechanical mirror assembly varies the cavity length of the organic laser cavity device.

Abstract: An apparatus for providing modulated light, that includes: a VCSEL array for generating an illumination beam from a plurality of emissive elements within the VCSEL array; a linear array of electromechanical grating devices for modulating the illumination beam to provide a plurality of diffracted orders; an obstructing element for blocking at least one of the plurality of diffracted orders; and means for conditioning the illumination beam to provide a suitable aspect ratio for incidence onto the linear array of electromechanical grating devices and/or remove unwanted spatial content.