Abstract: A laser emitting apparatus includes a substrate having on one side an incoherent light-emitting device having a light-emitting layer wherein an electric field is applied across the light-emitting layer to produce light which is transmitted out of the incoherent light-emitting device through an optically transparent layer into a vertical laser cavity structure disposed to receive light transmitted from the incoherent light-emitting device and produce laser light.

Abstract: An organic vertical cavity laser light producing device includes a bottom dielectric stack reflective to light over a predetermined range of wavelengths; an organic active region for producing laser light; and a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths. The device also includes the active region in which is contained one or more periodic gain region(s) and organic spacer layers disposed on either side of the periodic gain region(s) and arranged so that the periodic gain region(s) is aligned with the antinodes of the device's standing wave electromagnetic field.

Abstract: A laser emitting apparatus includes an incoherent light-emitting device having a light-emitting layer wherein an electric field is applied across the light-emitting layer to produce light which is transmitted out of the incoherent light-emitting device and a vertical laser cavity structure disposed to receive light transmitted from the incoherent light-emitting device and produce laser light.

Abstract: An organic vertical cavity phase-locked laser array device includes a substrate, a bottom dielectric stack reflective to light over a predetermined range of wavelengths, and an organic active region for producing laser light. The device also includes a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths, and a patterned reflectance modulator formed on a surface of the substrate to define an array of spaced laser pixels which have higher reflectance than the interpixel regions and causes the array to emit coherent phase-locked laser light.

Abstract: A display system for providing a user viewable visible color image includes a display for receiving color laser light so that the display, in response to color laser light, produces a viewable visible colored image; a plurality of different color laser light sources arranged in an array with each such laser light source including: a first dielectric stack for receiving and transmitting pump-beam light and being reflective to laser light over a predetermined range of wavelengths; an organic active region for receiving transmitted pump-beam light from the first dielectric stack; and a second dielectric stack for reflecting transmitted pump-beam light and laser light from the organic active region back into the organic active region. The display system projects color laser light from the array onto the display in a pattern to cause a visual image to be produced by the display.

Abstract: An organic vertical cavity laser light producing device includes a bottom dielectric stack reflective to light over a predetermined range of wavelengths; an organic active region for producing laser light, and having an organic active region including emissive material; and a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths. Pump-beam light is transmitted and introduced into the organic active region through at least one of the dielectric stacks. The organic active region includes one or more periodic gain region(s) and organic spacer layers disposed on either side of the periodic gain region(s) and arranged so that the periodic gain region(s) is aligned with the antinodes of the device's standing wave electromagnetic field, and wherein the spacer layers are substantially transparent to the laser light.

Abstract: An organic vertical cavity laser light producing device includes a bottom dielectric stack reflective to light over a predetermined range of wavelengths; an organic active region for producing laser light; and a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths. The device also includes the active region in which is contained one or more periodic gain region(s) and organic spacer layers disposed on either side of the periodic gain region(s) and arranged so that the periodic gain region(s) is aligned with the antinodes of the device's standing wave electromagnetic field.

Abstract: An organic vertical cavity phase-locked laser array device includes a bottom dielectric stack reflective to light over a predetermined range of wavelengths and an organic active region for producing laser light. The device also includes a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths, and an etched region formed in a surface of the bottom dielectric stack to define an array of spaced laser pixels which have higher reflectance than the interpixel regions so that the array emits coherent phase-locked laser light.

Abstract: An organic light-emitting diode includes a transparent substrate, a transparent anode layer disposed over the substrate, and a hole-transport layer disposed over the anode layer. The diode also includes a light-emitting layer disposed over the hole-transport layer, an electron-transport layer disposed over the light-emitting layer, a cathode disposed over the electron-transport layer and having a thickness selected so that light can pass through such cathode, and a light-absorbing layer disposed over the cathode. A dielectric spacer layer disposed over the light-absorbing layer and a conductive layer disposed over the spacer layer and electrically connected to the cathode so that when a voltage is applied between the transparent anode and the cathode, the light-emitting layer produces light which passes directly through the hole-transport layer and the transparent anode and substrate.

Abstract: An organic light-emitting diode includes a transparent substrate, a transparent anode layer disposed over the substrate, and a hole-transport layer disposed over the anode layer. The diode also includes a light-emitting layer disposed over the hole-transport layer, an electron-transport layer disposed over the light-emitting layer, a cathode disposed over the electron-transport layer and having a thickness selected so that light can pass through such cathode, and a light-absorbing layer disposed over the cathode. A dielectric spacer layer disposed over the light-absorbing layer and a conductive layer disposed over the spacer layer and electrically connected to the cathode so that when a voltage is applied between the transparent anode and the cathode, the light-emitting layer produces light which passes directly through the hole-transport layer and the transparent anode and substrate.

Abstract: A laser emitting apparatus includes an incoherent light-emitting device having a light-emitting layer wherein an electric field is applied across the light-emitting layer to produce light which is transmitted out of the incoherent light-emitting device and a vertical laser cavity structure disposed to receive light transmitted from the incoherent light-emitting device and produce laser light.

Abstract: The invention relates to an apparatus for light fastness testing. The apparatus for holding samples for testing comprising a planar member and vacuum to hold a sample against the test area of the planar member. A heating and cooling device in contact with said planar member, a heat sink, in contact with the heating and cooling device and a fan to direct air over the heat sink.

Abstract: The invention relates to an apparatus for light fastness testing comprising a light source, means for dividing ultraviolet and visible light from infrared rays, means to direct the visible component of light into spherical cavity, and means to mount test samples in apertures in said cavity.

Abstract: A ridge waveguide distributed feedback semiconductor laser diode having a depressed-index cladding layer formed on a graded lower cladding layer.

Abstract: A depressed-index cladding ridge waveguide semiconductor laser diode includes a depressed-index cladding layer formed in the lower cladding region.

Abstract: A stabilized depressed-index cladding ridge waveguide semiconductor laser diode having a graded (index of refraction) lower cladding layer.

Abstract: A vertical cavity surface emitting laser is disclosed including a lower cladding layer of a particular conductivity type deposited on the semiconductor substrate, having multiple periods of semiconductor layers of varying index cf refraction so deposited as to form a .lambda./2 Bragg reflector; and an upper cladding layer of opposite conductivity type having multiple periods of semiconductor layers of varying index of refraction so deposited as to form a multilayer reflector.

Abstract: An AlGaAs-based semiconductor laser diode is disclosed which has a Zn-stop diffusion layer of p-type conductivity deposited on the active layer, having an Al content greater than 85%.

Abstract: A distributed-feedback semiconductor laser diode includes a patterned electrically conductive layer deposited on a capping layer, selectively forming a lossy section, such that electrical contact is absent for a small longitudinal section of the capping layer.

Abstract: The present invention relates to a laser diode which comprises a substantially rectangular body of a semiconductor material on the surface of a semiconductor substrate. The body has a pair of opposed end surfaces and side surfaces extending between the end surfaces. The body comprises a multiple quantum well active layer between cladding layers. An electrically insulating (separation) region extends through one of the cladding layers and through the active region to divide the body into a laser diode in which light is generated in the active layer by the recombination of oppositely charged carriers, and an absorber which can shift the generated light between the TE and TM modes when a small voltage is applied thereacross. A capping layer of an insulating semiconductor material is over the outermost cladding layer and conductive regions extend through the capping layer to the cladding layer in each of the laser diode and the absorber.