Abstract: A composition and a method for preparing a polymer composite article. The composition comprises (A) a filler in an amount of from 10 to 90 wt. The composition also comprises (B) a polymer in an amount of from 10 to 90 wt. %. wherein the (B) polymer is selected from polyolefins, polyamides, polyesters, or combinations thereof. Further, the composition comprises (C) an organopolysiloxane in an amount of from greater than 0 to 10 wt. %; the (C) organopolysiloxane having at least one silicon-bonded hydroxyl group and a viscosity of from 1,000 to 60,000 mPa·s at 25° C. The ranges for components (A)-(C) arc based on the total weight of components (A), (B) and (C) in the composition.

Abstract: Content is organized for brands by selecting a plurality of brand templates. After each selection, a set of properties is generated by applying a portion of settings of the respective brand template, with the remaining settings being overridden with settings for a channel communicating one of a plurality of presentations to a node of a network involved in the communication. The plurality of presentations may include different renditions of the same content. The properties may include sections configured for different focus areas and/or types of content associated with at tags to enable brand-level-targeting. Filters may be identified in the properties. Based on each of the identifications, a property from among the generated sets of properties may be selected based on comparisons with the associated tags.

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for dynamic impedance matching across multiple frequency bands of a power source. An example method includes amplifying a broadband signal, splitting the amplified broadband signal across a plurality of channel paths coupled to an impedance matching network, and adjusting at least one first impedance associated with the impedance matching network to achieve a second impedance within a threshold value based at least in part on feedback associated with the broadband signal. The impedance matching network includes a plurality of impedance matching circuits coupled to plasma excitation circuitry, and each of the impedance matching circuits is coupled to a different path of the plurality of channel paths and an output node.

Abstract: An weapon sight system includes a weapon sight having body with an optical element that is configured to superimpose a reticle that is visible through the optical element. The weapon sight includes a controller in electronic communication with and configured to control a light source. The light source may include an LED for generating a reticle image on the optical element at a plurality of different brightness conditions. The light source may include an array of LEDs for generating multiple different reticle images on the optical element. The weapon sight includes a Hall effect sensor in electronic communication with the controller to adjust user-selectable settings including reticle brightness or reticle image. The weapon sight system includes a magnetic input device for providing an input to the Hall effect sensor of the weapon sight.

Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.

Abstract: A system may be configured to monitor an amount of a gas species in a processing chamber using Optical Emission Spectrometry. The gas measurement may be provided as feedback to a control process that generates a target setpoint for a gas flow controller into the process chamber. This real-time process may increase/decrease the flow rate of the gas in order to maintain a process deposition mode within a transition region between primarily metallic deposition and primarily compound deposition.

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

Abstract: Systems and methods for controlling volumes of droplets is provided herein. In some cases, the systems comprise: a plurality of first light sources, a second light source, wherein a first light beam emitted a first light source of said plurality of first light sources is configured to intersect with a second light beam emitted from said second light source at an intersection area, wherein said system is configured to measure a characteristic of said droplet as it passes through said intersection area. Systems and methods for measuring volumes of droplets and for distinguishing between bubbles and droplets are also provided.

Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network for use with a plasma processing chamber comprises an input configured to connect to a power source, an output configured to connect to the plasma processing chamber, a V/I sensor connected between the input of the matching network and an output of the power source, a load capacitor connected in parallel with at least one capacitor connected in series with a load switch, a tuning capacitor connected in series with at least one capacitor connected in parallel with a tuning switch, and a multiple level pulsing phase/magnitude module connected to the V/I sensor and to a multiple level pulsing synchronization switch driver connected to each of the load switch and the tuning switch for activating at least one of the load switch and the tuning switch in response to a control signal, which is based on a V/I sensor measurement, received from the power source.

Abstract: Apparatus for physical vapor deposition are provided herein. In some embodiments, a clamp for use in a physical vapor deposition (PVD) chamber includes a clamp body and an outwardly extending shelf that extends from the clamp body, wherein the outwardly extending shelf includes a clamping surface configured to clamp an isolator ring to a chamber body of the PVD chamber, wherein a height of the outwardly extending shelf is about 15 percent to about 40 percent of a height of the clamp body and wherein the clamp body includes a central opening configured to retain a fastener therein.

Abstract: The present disclosure provides for a bone screw formed of continuous fibers, for example. The bone screw may include a first portion having a cylindrical shape and extending in a longitudinal direction from a first end to a second end, for example. In various embodiments, the first portion may include a thermoplastic material and/or be substantially formed of a thermoplastic material. In various embodiments, the bone screw may include a second portion coupled to the first portion and surrounding the first portion, at least partly, for example. In various embodiments, the second portion may include a plurality of layers, each layer comprising a continuous fiber material, for example. In various embodiments, the continuous fibers may be oriented longitudinally, diagonally, helically, radially, etc. In various embodiments, the second portion may define an exposed thread pattern and a leading tip.

Abstract: Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.

Abstract: Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion, a target disposed on the central portion, a plurality of recesses formed in the support portion; and a plurality of self-retained low-friction pads partially disposed in the plurality of recesses, wherein each of the plurality of low-friction pads includes a solid body portion, and a self-retaining stem that extends outward from a bottom of the solid body portion, wherein the self-retaining stem includes a first stem portion disposed in the first through-hole portion, and a second stem portion disposed within the second through-hole portion.

Abstract: Methods and systems are provided to generate a base digital file for a garment and a custom digital file for the garment, which may be used in garment production. For example, a system may receive information providing various specifications for manufacturing a garment, generate a base digital file for the garment, receive a request to transform the garment from a first garment size to a second garment size, and then generate a custom digital file for the garment by applying custom user body measurements to the base digital file or by applying a grading scale.

Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.