Abstract: This invention relates to new multimodal and/or broad molecular weight high density polyethylene polymers. The polymers may be made in a single reactor, preferably a gas phase reactor using a dual catalyst system comprising a pyridyldiamido transition metal compound, a metallocene compound, a support, and optionally an activator.

Abstract: This invention relates to new multimodal and/or broad molecular weight high density polyethylene polymers. The polymers may be made in a single reactor, preferably a gas phase reactor using a dual catalyst system comprising a pyridyldiamido transition metal compound, a metallocene compound, a support, and optionally an activator.

Abstract: A Hall effect device includes a Hall element and a voltage regulator. The Hall element has first and second bias terminals, or nodes. The Hall effect device maintains, or regulates, a voltage at a point within the Hall element between the first and second bias terminals at about a constant voltage level, while generating a Hall effect voltage. In particular embodiments, the Hall effect voltage is, thus, prevented from substantially varying with the temperature of the Hall element.

Abstract: A process of operating a computer system to create a subcircuit model of an N/P configurable extended drain MOS transistor in which the subcircuit model includes an npn bipolar transistor and a pnp bipolar transistor which correspond to current paths through n-channel drift lanes and p-channel drift lanes during dual mode operation. A process of operating a computer system to simulate the behavior of an electronic circuit including a N/P configurable extended drain MOS transistor in which a subcircuit model of the N/P configurable extended drain MOS transistor includes an npn bipolar transistor and a pnp bipolar transistor which correspond to current paths through n-channel drift lanes and p-channel drift lanes during dual mode operation. A computer readable medium storing an electronic circuit simulation program that generates a simulation output of the behavior of an electronic circuit including a N/P configurable extended drain MOS transistor.

Abstract: Simulation of an electronic circuit including a model of a ferroelectric capacitor. The model of the ferroelectric capacitor includes a multi-domain ferroelectric capacitor, in which each of the domains is associated with a positive and a negative coercive voltage. A probability distribution function of positive and negative coercive voltages is defined, from which a weighting function of the distribution of domains having those coercive voltages is defined. To create a model of a small ferroelectric capacitor, a Poisson probability distribution is assigned to each of an array of gridcells defining the probability distribution function of positive and negative coercive voltages, and a number of domains assigned to each gridcell is randomly selected according to that Poisson distribution and an expected number of domains in the modeled capacitor for that gridcell, based on the area of the modeled capacitor.

Abstract: A Hall effect device includes a Hall element and a voltage regulator. The Hall element has first and second bias terminals, or nodes. The Hall effect device maintains, or regulates, a voltage at a point within the Hall element between the first and second bias terminals at about a constant voltage level, while generating a Hall effect voltage. In particular embodiments, the Hall effect voltage is, thus, prevented from substantially varying with the temperature of the Hall element.

Abstract: A process of operating a computer system to create a subcircuit model of an N/P configurable extended drain MOS transistor in which the subcircuit model includes an npn bipolar transistor and a pnp bipolar transistor which correspond to current paths through n-channel drift lanes and p-channel drift lanes during dual mode operation. A process of operating a computer system to simulate the behavior of an electronic circuit including a N/P configurable extended drain MOS transistor in which a subcircuit model of the N/P configurable extended drain MOS transistor includes an npn bipolar transistor and a pnp bipolar transistor which correspond to current paths through n-channel drift lanes and p-channel drift lanes during dual mode operation. A computer readable medium storing an electronic circuit simulation program that generates a simulation output of the behavior of an electronic circuit including a N/P configurable extended drain MOS transistor.

Abstract: Simulation of an electronic circuit including a model of a ferroelectric capacitor. The model of the ferroelectric capacitor includes a multi-domain ferroelectric capacitor, in which each of the domains is associated with a positive and a negative coercive voltage. A probability distribution function of positive and negative coercive voltages is defined, from which a weighting function of the distribution of domains having those coercive voltages is defined. To create a model of a small ferroelectric capacitor, a Poisson probability distribution is assigned to each of an array of gridcells defining the probability distribution function of positive and negative coercive voltages, and a number of domains assigned to each gridcell is randomly selected according to that Poisson distribution and an expected number of domains in the modeled capacitor for that gridcell, based on the area of the modeled capacitor.

Abstract: A processor with a computer program product embodied thereon for modeling an LDMOS transistor having a drift region is provided. Characteristic behavior of a CMOS transistor with its body coupled to its source is generated, and characteristic behavior of a resistor is generated, where the resistor is coupled to the drain of the CMOS transistor. Then to account for impact ionization, an impact ionization current for electrons in the drift region an impact ionization current for holes in the drift region are calculated.

Abstract: A vacuum cleaner height adjustment mechanism including a cleaning head having a pair of laterally spaced front wheels and a pair of laterally spaced rear wheels mounted for rotation within the cleaning head for supporting the cleaning head on a floor during vacuum cleaning operations, the front wheels being mounted to a common axle mounted in the cleaning head for pivotal movement around a fixed axis, the wheels being mounted to the axle offset from the pivotal axis of the axle, an arm extending from the axle, a shaft mounted substantially horizontally in the cleaning head for rotation about a central axis disposed in a plane perpendicular to a plane containing the axis of the axle, one end of the shaft having spiral threads thereon and an opposite end having an adjustment knob fixed thereto for manually rotating the shaft, and a guide member having internal threads matching and engaged with the spiral threads on the shaft for movement along the shaft, the guide member being coupled to the arm extending from

Abstract: A vacuum cleaner is provided having a cleaning head and a main body pivotally mounted to the cleaning head which includes a counter-balance mechanism having at least one torsion spring with a first end thereof mounted for pivotal movement about a fixed axis in either the cleaning head or the main body and a second end thereof mounted for pivotal movement about a fixed axis in the other of the cleaning head or the main body, with the at least one torsion spring having a main body portion which is free to move as the main body of the vacuum cleaner is pivoted relative to the cleaning head, the counter-balancing force of the at least one torsion spring increasing as the main body of the vacuum cleaner is pivoted from a generally vertical position to a generally horizontal position while the cleaning head remains generally horizontal.

Abstract: A method of generating transistor scattering parameters employs a single circuit simulation with a self-correction scheme for the artificial DC voltage dropped across the 50-Ohm resistor representing transmission line impedance. A sub-circuit without 50-Ohm transmission line resistance is used to compute transistor bias current via a current-controlled voltage source to compensate for the DC voltage dropped across a 50-Ohm resistor contained in the network.

Abstract: A method of generating transistor scattering parameters employs a single circuit simulation with a self-correction scheme for the artificial DC voltage dropped across the 50-Ohm resistor representing transmission line impedance.

Abstract: A medical signal analyzer comprises a sensing device (1) including at least one sensor for monitoring at least one parameter derived from a physiological measurement taken from a patient under observation, a data collection device (2), coupled to the sensing device for receiving and sampling an output signal of the sensing device and generating digital signals representative of the parameter over a predetermined time interval, a data analysis means (4) comprising means operable to recognize in the digital signals received over a signal link from the data collection device a plurality of predetermined information features, and means for classifying at least one of the said features, to produce first output signals representative of the existence of such features and representative of feature classifications, signal storage means (6) arranged to receive and store the said first output signal as a short term knowledge base, database storage means for storing reference data as a long term knowledge base (10), an

Abstract: A vehicle anti-skid system in which the rate of re-application of brake pressure following a skid-correcting operation is controlled so that if after a predetermined time no skid has occurred the rate of re-application of brake pressure increases progressively with time.