Abstract: Wing deployment apparatus and methods are disclosed herein. An example wing deployment apparatus includes a rotary actuator coupled to a torque coupler having a locking key disposed in an opening. The locking key moves between an outer radial position and an inner radial position. A lead screw is rotationally coupled to the torque coupler. The lead screw has a first recess to accept the locking key when the locking key is in the inner radial position. A nut is threadably engaged to the lead screw and includes a second recess to accept the locking key when the locking key is in the outer radial position. The locking key prevents movement of the nut along the axis of rotation when the locking key is in the outer radial position. A wing is operatively coupled to the nut to move the wing to a deployed position.

Abstract: An inlet cover mechanism for an air launched vehicle includes a quick release pin, a chassis, a collar, and a piston pin. The inlet cover mechanism facilitates attachment and deployment of an inlet cover with the air launched vehicle. The quick release pin is connected to the inlet cover. The chassis is connected to the air launched vehicle. The collar is connected to the chassis and is releasably engageable with the quick release pin. The piston pin is slidably engaged within the chassis and is configured to contact the quick release pin.

Abstract: A wing lock and deployment apparatus for an air launched vehicle includes a driver acted on by a single linear actuation event. The disclosed wing lock and deployment apparatus is capable of unlocking deployable wings of an air launched vehicle, deploying deployable wings of the air launched vehicle from a stored position, and locking deployable wings of the air launched vehicle in a deployed position in sequential order with the one single linear actuation event.

Abstract: The present disclosure generally relates to magnetic field sensors with magnetic flux concentrators, and more particularly, to Hall sensors (which may be vertical or in-plane field Hall sensors) with magnetic flux concentrators. In an example, a sensor device includes a semiconductor die, a first magnetic flux concentrator, and a second magnetic flux concentrator. The semiconductor die includes a semiconductor substrate and an interconnect structure. The semiconductor substrate includes a Hall sensor in a semiconductor material. The interconnect structure is over the semiconductor substrate. The first magnetic flux concentrator is over the semiconductor die. The second magnetic flux concentrator is over the semiconductor die. At least part of the Hall sensor is laterally between the first magnetic flux concentrator and the second magnetic flux concentrator.

Abstract: In one example, a device comprises a lead frame, a semiconductor die, a spacer, and a magnetic concentrator. The lead frame comprises a conductor. The spacer is between the semiconductor die and the conductor. The magnetic concentrator overlaps at least partially with the conductor.

Abstract: An inlet cover mechanism for an air launched vehicle includes a quick release pin, a chassis, a collar, and a piston pin. The inlet cover mechanism facilitates attachment and deployment of an inlet cover with the air launched vehicle. The quick release pin is connected to the inlet cover. The chassis is connected to the air launched vehicle. The collar is connected to the chassis and is releasably engageable with the quick release pin. The piston pin is slidably engaged within the chassis and is configured to contact the quick release pin.

Abstract: In one example, circuitry is formed in a semiconductor die. A magnetic concentrator is formed on a surface of the semiconductor die and over the circuitry. An isolation spacer is placed on a lead frame. The semiconductor die is placed on the isolation spacer, and the magnetic concentrator is aligned to overlap the lead frame. Electrical interconnects are formed between the semiconductor die and the lead frame.

Abstract: A wing lock and deployment apparatus for an air launched vehicle includes a ball screw and driver acted on by a single actuation event. The disclosed wing lock and deployment apparatus is capable of unlocking deployable wings of an air launched vehicle, deploying deployable wings of the air launched vehicle from a stored position, and locking deployable wings of the air launched vehicle in a deployed position in sequential order with the one single actuation event.

Abstract: A wing lock and deployment apparatus for an air launched vehicle includes a ball screw and driver acted on by a single actuation event. The disclosed wing lock and deployment apparatus is capable of unlocking deployable wings of an air launched vehicle, deploying deployable wings of the air launched vehicle from a stored position, and locking deployable wings of the air launched vehicle in a deployed position in sequential order with the one single actuation event.

Abstract: A wing lock and deployment apparatus for an air launched vehicle includes a driver acted on by a single linear actuation event. The disclosed wing lock and deployment apparatus is capable of unlocking deployable wings of an air launched vehicle, deploying deployable wings of the air launched vehicle from a stored position, and locking deployable wings of the air launched vehicle in a deployed position in sequential order with the one single linear actuation event.

Abstract: An integrated circuit includes a doped region having a first conductivity type formed in a semiconductor substrate having a second conductivity type. A dielectric layer is located between the doped region and a surface plane of the semiconductor substrate, and a polysilicon layer is located over the dielectric layer. First, second, third and fourth terminals are connected to the doped region, the first and third terminals defining a conductive path through the doped region and the second and fourth terminals defining a second conductive path through the doped region, the second path intersecting the first path.

Abstract: A microelectronic device has a Hall sensor that includes a Hall plate in a semiconductor material. The Hall sensor includes contact regions in the semiconductor material, contacting the Hall plate. The Hall sensor includes an isolation structure with a dielectric material contacting the semiconductor material, on at least two opposite sides of each of the contact regions. The isolation structure is laterally separated from the contact regions by gaps. The Hall sensor further includes a conductive spacer over the gaps, the conductive spacer being separated from the semiconductor material by an insulating layer.

Abstract: A microelectronic device has a Hall sensor that includes a Hall plate in a semiconductor material. The Hall sensor includes contact regions in the semiconductor material, contacting the Hall plate. The Hall sensor includes an isolation structure with a dielectric material contacting the semiconductor material, on at least two opposite sides of each of the contact regions. The isolation structure is laterally separated from the contact regions by gaps. The Hall sensor further includes a conductive spacer over the gaps, the conductive spacer being separated from the semiconductor material by an insulating layer.

Abstract: A Hall sensor includes a Hall well, such as an implanted region in a surface layer of a semiconductor structure, and four doped regions spaced apart from one another in the implanted region. The implanted region and the doped regions include majority carriers of the same conductivity type. The sensor also includes a dielectric layer that extends over the implanted region, and an electrode layer over the dielectric layer to operate as a control gate to set or adjust the sensor performance. A first supply circuit provides a first bias signal to a first pair of the terminals, and a second supply circuit provides a second bias signal to the electrode layer.

Abstract: A Hall effect sensor including a Hall element disposed at a surface of a semiconductor body, including a first doped region of a first conductivity type disposed over and abutted by an isolated second doped region of a second conductivity type. First through fourth terminals of the Hall element are in electrical contact with the first doped region, and a fifth terminal in electrical contact with the second doped region. A Hall effect sensor includes a first current source coupled to the first terminal of the Hall element, and common mode feedback regulation circuitry. The common mode feedback regulation circuitry has an output coupled to the third terminal and a ground node, and having an input coupled to the second and fourth terminals of the Hall element, and an output coupled to the third terminal and a ground node, where the second doped region is coupled to the third terminal.

Abstract: In one example, circuitry is formed in a semiconductor die. A magnetic concentrator is formed on a surface of the semiconductor die and over the circuitry. An isolation spacer is placed on a lead frame. The semiconductor die is placed on the isolation spacer, and the magnetic concentrator is aligned to overlap the lead frame. Electrical interconnects are formed between the semiconductor die and the lead frame.

Abstract: A packaged current sensor includes a lead frame, an integrated circuit, an isolation spacer, a first magnetic concentrator, and a second magnetic concentrator. The lead frame includes a conductor. The isolation spacer is between the lead frame and the integrated circuit. The first magnetic concentrator is aligned with the conductor. The second magnetic concentrator is aligned with the conductor.

Abstract: A semiconductor device includes first and second Hall-effect sensors. Each sensor has first and third opposite terminals and second and fourth opposite terminals. A control circuit is configured to direct a current through the first and second sensors and to measure a corresponding Hall voltage of the first and second sensors. Directing includes applying a first source voltage in a first direction between the first and third terminals of the first sensor and applying a second source voltage in a second direction between the first and third terminals of the second sensor. A third source voltage is applied in a third direction between the second and fourth terminals of the first sensor, and a fourth source voltage is applied in a fourth direction between the second and fourth terminals of the second sensor. The third direction is rotated clockwise from the first direction and the fourth direction rotated counter-clockwise from the second direction.

Abstract: An integrated circuit includes a doped region having a first conductivity type formed in a semiconductor substrate having a second conductivity type. A dielectric layer is located between the doped region and a surface plane of the semiconductor substrate, and a polysilicon layer is located over the dielectric layer. First, second, third and fourth terminals are connected to the doped region, the first and third terminals defining a conductive path through the doped region and the second and fourth terminals defining a second conductive path through the doped region, the second path intersecting the first path.

Abstract: A semiconductor device includes first and second Hall-effect sensors. Each sensor has first and third opposite terminals and second and fourth opposite terminals. A control circuit is configured to direct a current through the first and second sensors and to measure a corresponding Hall voltage of the first and second sensors. Directing includes applying a first source voltage in a first direction between the first and third terminals of the first sensor and applying a second source voltage in a second direction between the first and third terminals of the second sensor. A third source voltage is applied in a third direction between the second and fourth terminals of the first sensor, and a fourth source voltage is applied in a fourth direction between the second and fourth terminals of the second sensor. The third direction is rotated clockwise from the first direction and the fourth direction rotated counter-clockwise from the second direction.