Patents by Inventor Kelly H. Block

Kelly H. Block has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polishing of semiconductor substrates
    Patent number: 6676718
    Abstract: According to the invention, an aqueous polishing composition comprises, abrasive particles and water of basic pH to remove a barrier layer by CMP using a polishing pad, the aqueous polishing composition further comprising, solely polar molecules each having multiple, polar bonding sites forming respective hydrogen bonds with silanol bonding groups on a hydrated silica dielectric layer of a semiconductor substrate, which form an hydrophilic protective film of the polar molecules that minimizes erosion.
    Type: Grant
    Filed: December 4, 2001
    Date of Patent: January 13, 2004
    Assignee: Rodel Holdings, Inc.
    Inventors: Qiuliang Luo, Qianqiu Ye, Kelly H. Block
  • Planarization of silicon carbide hardmask material
    Publication number: 20030139069
    Abstract: Disclosed is a chemical mechanical planarizing method useful for removing silicon carbide hardmask capping materials in the presence of Low-k dielectrics contained on semiconductor wafers. The method uses zirconia-containing slurries at acidic pH levels with the abrasive having a positive zeta potential to facilitate silicon carbide removal.
    Type: Application
    Filed: November 27, 2002
    Publication date: July 24, 2003
    Inventors: Kelly H. Block, Vikas Sachan
  • Polishing method for selective chemical mechanical polishing of semiconductor substrates
    Publication number: 20020132560
    Abstract: A chemical mechanical polishing method is provided for polishing substrates with one or more barrier layers on an underlying dielectric layer utilizing a polishing composition with a high selectivity for removal of the barrier layer material (for e.g. tantalum) resulting in a substrate with a planar dielectric layer with minimal scratching and erosion.
    Type: Application
    Filed: January 12, 2001
    Publication date: September 19, 2002
    Inventors: Qiuliang Luo, Qianqiu (Christine) Ye, Kelly H. Block
  • Polishing of semiconductor substrates
    Publication number: 20020132563
    Abstract: According to the invention, an aqueous polishing composition comprises, abrasive particles and water of basic pH to remove a barrier layer by CMP using a polishing pad, the aqueous polishing composition farther comprising, solely polar molecules each having multiple, polar bonding sites forming respective hydrogen bonds with silanol bonding groups on a hydrated silicon dielectric layer of a semiconductor substrate, which form an hydrophilic protective film of the polar molecules that minimizes erosion.
    Type: Application
    Filed: December 4, 2001
    Publication date: September 19, 2002
    Inventors: Qiuliang Luo, Qianqiu Ye, Kelly H. Block