Abstract: A first PECVD process incorporating a silicon oxide precursor alone and then with an organo-silicon precursor with increasing flow while the flow of the silicon oxide precursor is reduced to zero provides a graded carbon adhesion layer whereby the content of C increases with layer thickness and a second PECVD process incorporating an organo-silicon precursor including an organic porogen provides a multiphase ultra-low k dielectric. The multiphase ultra-low k PECVD process uses high frequency radio frequency power just above plasma initiation in a PECVD chamber. An energy post treatment is also provided. A porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa is formed.

Abstract: A multiphase ultra low k dielectric process incorporating an organo-silicon precursor including an organic porogen, high frequency radio frequency power just above plasma initiation in a PECVD chamber and energy post treatment. A porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa. A graded carbon adhesion layer of SiO2 and porous SiCOH.

Abstract: A metal seed composition useful in seeding a metal diffusion barrier or conductive metal layer on a semiconductor or dielectric substrate, the composition comprising: a nanoscopic metal component that includes a metal useful as a metal diffusion barrier or conductive metal; an adhesive component for attaching said nanoscopic metal component on said semiconductor or dielectric substrate; and a linker component that links said nanoscopic metal component with said adhesive component. Semiconductor and dielectric substrates coated with the seed compositions, as well as methods for depositing the seed compositions, are also described.

Abstract: A method for preparing and replying to multi-party e-mails is provided. The method includes opening an e-mail composition window in an e-mail application for generating an e-mail, specifying one or more recipients from a plurality of recipient groups for the e-mail, creating one or more response sections, identifying at least one recipient for each of the response sections, and sending the e-mail. The creating step further includes creating a general section in the e-mail. The method further includes selecting a delivery option from a plurality of delivery options for the e-mail prior to sending the e-mail and receiving one or more return receipts based on the delivery option selected in the e-mail sent. The method further includes selecting a response section in a received e-mail, and generating a reply to the response section in a reply e-mail composition window containing the response section.

Abstract: A data accessing method and system. The method includes receiving by a computing system from a first user, a first user profile comprising user preference data associated with the first user. The computing system receives and stores Webcast data associated with a Webcast that has been broadcasted for an entity. The Webcast data comprises audio/video data. The computing system receives from the first user, a first request for access to the first Webcast data. The computing system associates the user preference data with a first set of specified portions of the audio/video data. The computing system retrieves a first portion of audio/video data of the first set of specified portions of the audio/video data. The computing system presents the first portion of audio/video data to the first user.

Abstract: Provided are techniques for providing context-based user assistance. A request from a user for user assistance content for a first configurable element is received. One or more rules are retrieved for the first configurable element, wherein at least one of the rules describes a second configurable element that is related to the first configurable element. The one or more rules are used to identify context-based user assistance content for configuring at least one of the first configurable element and the second configurable element. The user assistance content is provided to the user.

Abstract: A cellular telephone signal monitoring method and system. The method includes receiving and storing by a computing system from a first cellular telephone, a first profile associated with a first user of the first cellular telephone and first monitoring data associated with the first user and the first cellular telephone. The computing system receives and stores from a plurality of cellular telephones, first additional monitoring data associated with a plurality of users and the plurality of cellular telephone. The computing system analyzes the first monitoring data and the first additional monitoring data. The computing system generates a first analysis report based on results of the analyzing. The computing system transmits to the first cellular telephone and the plurality of cellular telephones the first analysis report.

Abstract: Interconnect structures having buried etch stop layers with low dielectric constants and methods relating to the generation of such buried etch stop layers are described herein. The inventive interconnect structure comprises a buried etch stop layer comprised of a polymeric material having a composition SivNwCxOyHz, where 0.05?v?0.8, 0?w?0.9, 0.05?x?0.8, 0?y?0.3, 0.05?z?0.8 for v+w+x+y+z=1; a via level interlayer dielectric that is directly below said buried etch stop layer; a line level interlayer dielectric that is directly above said buried etch stop layer; and conducting metal features that traverse through said via level dielectric, said line level dielectric, and said buried etch stop layer.

Abstract: When an interconnect structure is built on porous ultra low k (ULK) material, the bottom of the trench and/or via is usually damaged by a following metallization process which may be suitable for dense higher dielectric materials. Embodiment of the present invention may provide a method of forming an interconnect structure on an inter-layer dielectric (ILD) material. The method includes steps of treating an exposed area of said ILD material to create a densified area, and metallizing said densified area.

Abstract: A dual damascene interconnect structure having a patterned multilayer of spun-on dielectrics on a substrate is provided. The structure includes: a patterned multilayer of spun-on dielectrics on a substrate, including: a cap layer; a first non-porous via level low-k dielectric layer having thereon metal via conductors with a bottom portion and sidewalls; an etch stop layer; a first porous line level low-k dielectric layer having thereon metal line conductors with a bottom portion and sidewalls; a polish stop layer over the first porous line level low-k dielectric; a second thin non-porous via level low-k dielectric layer for coating and planarizing the line and via sidewalls; and a liner material between the metal via and line conductors and the dielectric layers. Also provided is a method of forming the dual damascene interconnect structure.

Abstract: A system and method for providing customized help to a vehicle user when a vehicle problem is detected. The method includes detecting vehicle data that indicates a condition of a vehicle and obtaining profile data comprising an estimated mechanical skill level of a user. The method further includes providing instructions, based upon the profile data and the vehicle data, to the user for addressing the condition.

Abstract: The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.

Abstract: The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.

Abstract: A data accessing method and system. The method includes receiving by a computing system from a first user, a first user profile comprising user preference data associated with the first user. The computing system receives and stores Webcast data associated with a Webcast that has been broadcasted for an entity. The Webcast data comprises audio/video data. The computing system receives from the first user, a first request for access to the first Webcast data. The computing system associates the user preference data with a first set of specified portions of the audio/video data. The computing system retrieves a first portion of audio/video data of the first set of specified portions of the audio/video data. The computing system presents the first portion of audio/video data to the first user.

Abstract: A cellular telephone signal monitoring method and system. The method includes receiving and storing by a computing system from a first cellular telephone, a first profile associated with a first user of the first cellular telephone and first monitoring data associated with the first user and the first cellular telephone. The computing system receives and stores from a plurality of cellular telephones, first additional monitoring data associated with a plurality of users and the plurality of cellular telephone. The computing system analyzes the first monitoring data and the first additional monitoring data. The computing system generates a first analysis report based on results of the analyzing. The computing system transmits to the first cellular telephone and the plurality of cellular telephones the first analysis report.

Abstract: Fabricating an integrated circuit using a cap layer that includes one or more gaps or voids. The gaps or voids are provided prior to performing deposition and cure for an inter-layer dielectric (ILD) layer adjoining the cap layer. The gaps or voids reduce and prevent tensile stress buildup by allowing for stress relaxation, hence preventing catastrophic failure of the integrated circuit.

Abstract: The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.

Abstract: The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.

Abstract: The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.

Abstract: Interconnect structures having buried etch stop layers with low dielectric constants and methods relating to the generation of such buried etch stop layers are described herein. The inventive interconnect structure comprises a buried etch stop layer comprised of a polymeric material having a composition SivNwCxOyHz, where 0.05?v?0.8, 0?w?0.9, 0.05?x?0.8, O?y?0.3, 0.05?z?0.8 for v+w+x+y+z=1; a via level interlayer dielectric that is directly below said buried etch stop layer; a line level interlayer dielectric that is directly above said buried etch stop layer; and conducting metal features that traverse through said via level dielectric, said line level dielectric, and said buried etch stop layer.