Abstract: The present invention relates to compounds of Formula (I): that are have activity as S1P receptor modulating agents, more specifically to specifically compounds that are S1P1 receptor agonists. The invention also related to the use of such compounds to treat diseases associated with inappropriate S1P1 receptor activity such as autoimmune diseases.

Abstract: A process for the extraction of uranium compounds from wet-process phosphoric acid includes lowering the iron concentration of the wet-process phosphoric acid and reducing the valency of any remaining ferric iron in the wet-process phosphoric acid to ferrous iron, and then extracting uranium compounds from the wet-process phosphoric acid. The process can include separating a side stream from a feed stream of wet-process phosphoric acid, wherein the side stream has a greater concentration of the uranium compounds than the feed stream by filtration. Extracting uranium compounds from the wet-process phosphoric acid can be by ion exchange process or by solvent extraction.

Abstract: A horizontal directional drilling system is used to drive operation of a guidable reamer assembly connected to a drill string. The guidable reamer assembly preferably has a cutting member with a central longitudinal axis and a support member also having a central longitudinal axis. The longitudinal axes of the cutting member and the support member are collinear when the reamer assembly is in the non-steering position and laterally displaced when in the steering position. The assembly and method of this invention provide for increased control of reaming operations and product pipe placement.

Abstract: A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.

Abstract: A hermetically sealed package includes: a first plate including inside and outside surfaces; a second plate including inside and outside surfaces; frit material disposed on the inside surface of the second plate; and at least one dielectric layer disposed directly or indirectly on at least one of: (i) the inside surface of the first plate at least opposite to the frit material, and (ii) the inside surface of the second plate at least directly or indirectly on the frit material, wherein the frit material forms a hermetic seal against the dielectric layer in response to heating.

Abstract: An infusion catheter includes a catheter body having a proximal end, a distal end, and two or more lumens extending therethrough. The infusion catheter also includes an infusion tube having a proximal end, a distal end, and one or more ports disposed therethrough. The first lumen of the catheter body is in fluid communication with the lumen of the infusion tube. A central member has a distal end connected to the distal end of the infusion tube, a proximal end, and a proximal portion slidably received in the second lumen of the catheter body. The infusion tube is disposed relative to the central member such that axial advancement of the central member relative to the catheter body radially collapses the infusion tube over the central member and axial retraction of the central member relative to the catheter body radially expands the infusion tube about the central member.

Abstract: A method for processing a substrate is provided, wherein a first organosilicon precursor, a second organosilicon precursor, a porogen, and an oxygen source are provided to a processing chamber. The first organosilicon precursor comprises compounds having generally low carbon content. The second organosilicon precursor comprises compounds having higher carbon content. The porogen comprises hydrocarbon compounds. RF power is applied to deposit a film on the substrate, and the flow rates of the various reactant streams are adjusted to change the carbon content as portions of the film are deposited. In one embodiment, an initial portion of the deposited film has a low carbon content, and is therefore oxide-like, while successive portions have higher carbon content, becoming oxycarbide-like. Another embodiment features no oxide-like initial portion. Post-treating the film generates pores in portions of the film having higher carbon content.

Abstract: The invention provides a hair treatment composition comprising a hair substantive polymer, the hair substantive polymer comprising a polymeric backbone bearing: (a) at least one side chain which is formed from a hair fibre targeting group which is covalently linked to the polymeric backbone, the hair fibre targeting group being a non-cationic species which is capable of specifically interacting with the protein surface of the hair fibre in a non-covalent interaction having a bond energy ranging from 0.5 to 3 Kcal/mol, when the composition is applied to hair; (b) preferably, at least one side chain which is different to side chain (a) and which comprises a hair benefit agent.

Abstract: A method of forming a pattern of electrical conductors on a receiving substrate (110) comprises forming metal nanoparticles of a conductive material. A donor substrate (45) is formed. A layer of release material (75) is deposited on a first side of the donor substrate. The metal nanoparticles are deposited on the release material. The metal nanoparticulate layer are placed in contact with the receiving substrate. A pattern is written on a sandwich formed by the donor substrate and the receiving substrate, causing metal nanoparticles from the nanoparticulate layer (90) to anneal and transfer to the receiving substrate to form the pattern of electrical conductors on the receiving substrate.

Abstract: The invention relates to nitrilases and to nucleic acids encoding the nitrilases. In addition methods of designing new nitrilases and method of use thereof are also provided. The nitrilases have increased activity and stability at increased pH and temperature.

Abstract: A method of making an OLED device, including providing a substrate having a first electrode and a conductive bus line provided over the substrate and organic EL media provided over the first electrode and over the conductive bus line; forming a radiation absorbing structure associated with the conductive bus line; exposing the radiation absorbing structure to radiation to produce heat sufficient to ablate a portion of the organic EL media thereby forming an opening in the organic EL media; and forming a second electrode over the organic EL media, and through the opening in the organic EL media thereby forming an electrical connection between the second electrode to the conductive bus line.

Abstract: A gas-filled surge arrester includes at least two electrodes, a gas filling and an activating compound applied to at least one of said electrodes. The activating compound can include: (i) nickel powder in an amount of about 10% to about 35% by weight; (ii) potassium or sodium silicate in an amount of about 20% to about 40% by weight; (iii) titanium powder in an amount of about 5% to about 25% by weight; (iv) calcium titanium oxide in an amount of about 5% to about 15% by weight; and (v) sodium bromide in an amount of about 10% to about 20% by weight. Ignition striping process and resulting stripes from ink-jetting of striping material are disclosed.

Abstract: A method and apparatus for treating a substrate is provided. A porous dielectric layer is formed on the substrate. In some embodiments, the dielectric may be capped by a dense dielectric layer. The dielectric layers are patterned, and a dense dielectric layer deposited conformally over the substrate. The dense conformal dielectric layer seals the pores of the porous dielectric layer against contact with species that may infiltrate the pores. The portion of the dense conformal pore-sealing dielectric layer covering the field region and bottom portions of the pattern openings is removed by directional selective etch.

Abstract: A system and method for controlling the temperature of a fuel gas. The system and method includes mixing an intermediate pressure feedwater stream from the heat recovery steam generator with a high pressure feedwater stream from the heat recovery steam generator, then using that mixture to heat the fuel gas mixture. The system and method may provide for improved control over the Modified Wobbe Index of the fuel gas, which may allow for greater variation in the composition of the fuel gas.

Abstract: Techniques and systems for authentication with an untrusted root between a client and a server are disclosed. In some aspects, a client may connect to a server. The server and client may initiate a secure connection by exchanging certificates. The server may accept a client certificate having an untrusted root that does not chain up to a root certificate verifiable to the server certificate authority. In further aspects, the server may enable the client to associate an untrusted certificate with an existing account associated with the server. The client certificate may be hardware based or generated in software, and may be issued to the client independent of interactions with the server.

Abstract: Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

Abstract: A heating system for a subsurface formation is disclosed. The system includes a plurality of substantially horizontally oriented or inclined heater sections located in a hydrocarbon containing layer in the formation. At least a portion of two of the heater sections are substantially parallel to each other. The ends of at least two of the heater sections in the layer are electrically coupled to a substantially horizontal, or inclined, electrical conductor oriented substantially perpendicular to the ends of the at least two heater sections.

Abstract: A method for removing a mask layer and reducing damage to a patterned dielectric layer is described. The method comprises disposing a substrate in a plasma processing system, wherein the substrate has a dielectric layer formed thereon and a mask layer overlying the dielectric layer. A pattern is formed in the mask layer and a feature formed in the dielectric layer corresponding to the pattern as a result of an etching process used to transfer the pattern in the mask layer to the dielectric layer. The feature includes a sidewall with a first roughness resulting from the etching process. A process gas comprising CO2 and CO is introduced into the plasma processing system, and plasma is formed. The mask layer is removed, and a second roughness, less than the first roughness, is produced by selecting a flow rate of the CO relative to a flow rate of the CO2.

Abstract: A secure method for requesting resources in a distributed computer network is described. The method comprises of a means of securely integrating a request for a resource along with its validation and authentication from a first server with restrictions for the request such as expiry date and IP address as well as other request parameters. The resulting request is placed on a second server which is capable of decoding and responding to the request or redirects the request securely to a third computer to respond.