Abstract: According to one embodiment, a semiconductor manufacturing apparatus includes a chamber, a stage, and first gas injector. The chamber is configured to contain a wafer. The stage is configured to hold the wafer in the chamber. The first gas injector is set at N (N is an integer of 2 or more) injection angles with respect to a vertical axis relative to a wafer surface, and is capable of injecting a gas of one and the same kind from the side portion to the center of the wafer at the N injection angles.

Abstract: A multilayered container with excellent heat resistance which is obtained by melt molding and has an interlayer made of an oxygen-absorbing barrier resin composition. The multilayered container comprises inner and outer layers comprising an olefin resin and, sandwiched between the inner and outer layers, an interlayer made of an oxygen-absorbing barrier resin composition. The multilayered container is one formed by melt molding. In thermal analysis of a container barrel part, it has a quantity of heat of isothermal crystallization after heating from 30° C. to 130° C. at 100° C./min of 0.5 J/g or larger. In the analysis, the barrel part, after cooling from 200° C. to 130° C. at 100° C./min, gives an isothermal crystallization profile in which the time period to a peak top is shorter than that in a multilayered container including an interlayer consisting only of the base resin (oxygen-barrier resin) constituting the oxygen-absorbing barrier resin composition.

Abstract: Disclosed is an optical transceiver 1 including a phase locked loop circuit 3a configured to receive a reference clock CL1 and remove a jitter component of the reference clock CL1; a second phase locked loop circuit 3b configured to receive an output of the first phase locked loop circuit, generate a multiplied clock CL3 synchronized with the output, and when the frequency of the output deviates from a predetermined range and is in an abnormal state, output an alarm signal ALM1; and an optical transmitter module 5 configured to output an optical output signal modulated based on the multiplied clock CL3 and electrical signals D1, D2, D3, and D4 from the outside.

Abstract: To improve characteristics of a semiconductor device. An element isolation region is etched by using a photoresist film as a mask, and thereby a p-type well that is a layer under the element isolation region is exposed. Thereafter, deposit over a surface of the photoresist film is etched. Then, a source region is formed by implanting impurity ions into the exposed p-type well by using the photoresist film as a mask, and thereafter, the photoresist film is removed. Thereby, it is possible to prevent a hardened layer from being formed due to injection of impurity ions into the deposit over the surface of the photoresist film. As a result, it is possible to suppress a popping phenomenon when the photoresist film is removed, so that it is possible to prevent a pattern of a gate and the like from being broken.

Abstract: Disclosed is a multilayered container having an intermediate layer comprising an oxygen-absorbable barrier resin composition showing excellent processability upon molding. Specifically disclosed is a multilayered container which comprises an inner layer and an outer layer each comprising an olefin resin and an intermediate layer provided between the inner layer and the outer layer and comprising an oxygen-absorbable barrier resin composition, wherein the oxygen-absorbable barrier resin composition has a cooling crystallization peak temperature lower than that of a base resin (an oxygen barrier resin) which constitutes the oxygen-absorbable barrier resin composition, the multilayered container is formed by a solid-phase-forming process at a temperature lower by 1 to 15° C. than the cooling crystallization starting temperature (Tc2) of the base resin, and the body of the container shows a calorific value of less than 0.5 J/g by the isothermal crystallization after heating from 30° C. to 130° C.

Abstract: Disclosed is an optical transceiver 1 including a phase locked loop circuit 3a configured to receive a reference clock CL1 and remove a jitter component of the reference clock CL1; a second phase locked loop circuit 3b configured to receive an output of the first phase locked loop circuit, generate a multiplied clock CL3 synchronized with the output, and when the frequency of the output deviates from a predetermined range and is in an abnormal state, output an alarm signal ALM1; and an optical transmitter module 5 configured to output an optical output signal modulated based on the multiplied clock CL3 and electrical signals D1, D2, D3, and D4 from the outside.