Abstract: The built-in self-test (BIST) circuit includes an address generating circuit. The BIST circuit includes a data generating circuit. The BIST circuit includes a chip enable signal generating circuit. The BIST circuit includes a control signal generating circuit. The memory block circuit includes the multiple memories. The memory block circuit includes an address converting circuit that generates, based on the address signal, an address input signal corresponding to the address of the memory to be tested out of the multiple memories, and generates a memory selection signal for selecting the memory to be tested from the multiple memories. The memory block circuit includes a memory output selecting circuit that selects and outputs data from the memory to be tested out of the multiple memories, based on the memory selection signal.

Abstract: The built-in self-test (BIST) circuit includes an address generating circuit. The BIST circuit includes a data generating circuit. The BIST circuit includes a chip enable signal generating circuit. The BIST circuit includes a control signal generating circuit. The memory block circuit includes the multiple memories. The memory block circuit includes an address converting circuit that generates, based on the address signal, an address input signal corresponding to the address of the memory to be tested out of the multiple memories, and generates a memory selection signal for selecting the memory to be tested from the multiple memories. The memory block circuit includes a memory output selecting circuit that selects and outputs data from the memory to be tested out of the multiple memories, based on the memory selection signal.

Abstract: According to one embodiment, a semiconductor integrated circuit includes at least one memory and at least one built-in self test (BIST) circuit. In the memory, data can be stored. The BIST circuit tests the memory and includes an address generator. The address generator operates in one of a first operating mode and a second operating mode. In the first operating mode, address signals corresponding to all addresses of the memory are generated. In the second operating mode, the address signals are generated such that each bit of an address input of the memory can be one signal state of both 0 and 1 and such that different bits constitute a set of pieces of data in which the bits choose different signal states at least once.

Abstract: A semiconductor integrated circuit includes a memory containing multiple memory bits that store predetermined data placed in a first address direction and a second address direction. The semiconductor integrated circuit includes a BIST (Built-in Self-Test) circuit that diagnoses a failure of the memory. The BIST circuit includes a BIST control circuit that controls a BIST on the memory. The BIST circuit includes a failure information table storing: a failed bit-cell position that is an address of a bit cell identified in the first address direction as a failed bit cell by the BIST conducted in the first address direction; the number of bit cell failures at the failed bit-cell position; and a failure overflow flag indicating whether the number of failures exceeds a predetermined upper value or not. The BIST circuit includes a result analyzer that outputs a BIST result obtained by the BIST on the memory.

Abstract: A semiconductor integrated circuit has one or more of scan chains each having series-connected flip-flops that exist in an internal circuit. Each scan chain is divided into a plurality of segments. Each segment is controllable a timing of a clock signal. The semiconductor integrated circuit has a clock gating circuit capable of being shared by the scan chains and configured to generate a plurality of clock signals for driving each segment, the clock gating circuit being provided for each scan chain, and a segment control signal generator configured to generate a control signal to be used when the clock gating circuit generates the clock signals so that an effect of a fault of the internal circuit is transferred through one of the segments and care bits corresponding to a next fault are captured in a corresponding segment.

Abstract: A semiconductor integrated circuit includes memories, a BIST circuit, and an analyzer. The BIST circuit includes a test controller performing the test and generating a memory selection signal selecting a memory to be tested, an address generator generating write and read addresses, a data generator generating write data and an expected output value, and a control signal generator generating a control signal. The analyzer includes a memory output selector selecting output data, a bit comparator comparing the output data with the expected output value, an error detection unit determining whether there is an error in the memory, a plurality of pass/fail flag registers capable of storing a pass/fail flag, a repair analyzer analyzing a memory error and generating a repair analysis result, a plurality of repair analysis result registers capable of storing the repair analysis result, and an output unit outputting the pass/fail flag and the repair analysis result.

Abstract: A one-hot data generating unit generates one-hot data for the maximum data bit width in which a state of one bit is exclusively inverted with respect to states of other bits while sequentially shifting a bit position to be inverted, and writes the one-hot data in an area of a memory designated by an address. A short defect between wirings connected to the memory is detected by comparing the one-hot data written in the memory with the one-hot data before being written.

Abstract: A semiconductor integrated circuit has a plurality of memory devices each comprising a memory cell array which includes a plurality of memory cells to store data, a spare part which includes a redundant cell to avoid a memory cell judged to be defective in the plurality of memory cells and conduct redundancy repair on data, and a switching circuit to avoid the defective memory cell and conduct switching to the redundant cell; and a repair code decoding circuit comprising a storage circuit which stores a repair code, a decoder which outputs a repair decoded signal obtained by decoding the repair code, wherein the switching circuit respectively in the memory devices avoids a memory cell corresponding to the repair decoded signal and conducts switching to the redundant cell of the memory devices in accordance with the repair decoded signal.

Abstract: An on-chip failure analysis circuit for analyzing a memory has a memory in which data is stored, a built-in self test unit which tests the memory, a failure detection unit which detects a failure of the output of the memory, a fail data storage unit in which fail data is stored, the fail data including a location of the failure, a failure analysis unit which performs failure analysis using the number of failures detected by the failure detection unit and the location of the failure, the failure analysis unit writing fail data including the analysis result in the fail data storage unit, and an analysis result output unit which outputs the analysis result of the failure analysis unit.

Abstract: A semiconductor integrated circuit has a memory collar including a memory cell configured to store a written data pattern and read and output the data pattern, and a register configured to store a failed data pattern, and a built-in self test circuit configured to write the data pattern in the memory cell, output expected value data, and decide whether to continue a test or suspend the test to output failure information to outside, based on a comparison result of the data pattern outputted from the memory cell and the expected value data and a comparison result of the data pattern and the failed data pattern.

Abstract: A semiconductor integrated circuit includes: a memory collars including: a memory cell; a fetch register that is configured to fetch data as a first fetch data; a comparing unit that is configured to compare the first fetch data with an expected value; a failure detecting signal output unit that is configured to receive the compared result and output a failure detecting signal; and a BIST circuit including: a BIST control unit that is configured to output an instruction and output a BIST status; a shift controller that is configured to receive a first clock signal, the BIST status signal, and the failure detecting signal and output sift enable signal; a shift counter that counts the number of clock pulses on the first clock signal; a first storage register that is configured to receive the first clock signal and the shift enable signal, and a second storage register that is configured to receive a second clock signal.

Abstract: A semiconductor integrated circuit has a plurality of memory devices each comprising a memory cell array which includes a plurality of memory cells to store data, a spare part which includes a redundant cell to avoid a memory cell judged to be defective in the plurality of memory cells and conduct redundancy repair on data, and a switching circuit to avoid the defective memory cell and conduct switching to the redundant cell; and a repair code decoding circuit comprising a storage circuit which stores a repair code, a decoder which outputs a repair decoded signal obtained by decoding the repair code, wherein the switching circuit respectively in the memory devices avoids a memory cell corresponding to the repair decoded signal and conducts switching to the redundant cell of the memory devices in accordance with the repair decoded signal.

Abstract: According to one embodiment, an electrical package includes: an external input portion; an external output portion; a plurality of integrated circuits that is compatible with a compressed deterministic pattern test, each of the integrated circuits including: an input portion; a decompressor that is connected to the input portion; scan chains that are connected to the decompressor; a compactor that is connected to the scan chains; a selector that is connected to the compactor and the input portion to selectively output an output of the compactor or an output of the input portion; and an output portion that is connected to the selector.

Abstract: A semiconductor integrated circuit has a data generation circuit configured to generate first data used for function verification of a built-in self test circuit and a built-in redundancy allocation circuit of a memory, a failure data generation circuit configured to generate second data for conducting a built in self test by inverting at least one bit of the first data based on a failure injection indication signal, and a timing circuit configured to adjust timing of at least one of the first and the second data in order to use one of the first and the second data as writing data to the memory and to use the other as an output expected value compared with data read out from the memory.

Abstract: An integrated circuit device according to an embodiment of this invention includes: a memory having: a first port to which a first clock signal is input, and a second port to which a second clock signal is input; and a built-in self test circuit having: a first signal generating circuit to which the first clock signal is input, a second signal generating circuit to which the second clock signal is input, a clock selecting circuit to which the first and second clock signals are input and which selects and outputs one of the input clock signals, and a controlling circuit which outputs a clock requesting signal requesting one of the first and second clock signals to the clock selecting circuit, operates in accordance with the clock signal selected and output by the clock selecting circuit, and outputs a controlling signal for controlling one of the first and second signal generating circuits.

Abstract: A semiconductor integrated circuit contains a logic circuit which operates upon receiving a clock; a logic built-in self test circuit which executes a built-in self test of said logic circuit, said logic built-in self test circuit having a pattern generator which generates a pattern to be input to said logic circuit, a pattern compactor which receives data output from said logic circuit that has received the pattern, compacts the data, and outputs a result, and a logic built-in self test control unit which controls operations of said pattern generator and said pattern compactor and controls an operation of causing a scan path in said logic circuit to shift upon receiving the pattern; a device circuit which operates upon receiving the clock; and a device circuit built-in self test circuit which executes a built-in self test of said device circuit.

Abstract: A semiconductor integrated circuit includes memories, a BIST circuit, and an analyzer. The BIST circuit includes a test controller performing the test and generating a memory selection signal selecting a memory to be tested, an address generator generating write and read addresses, a data generator generating write data and an expected output value, and a control signal generator generating a control signal. The analyzer includes a memory output selector selecting output data, a bit comparator comparing the output data with the expected output value, an error detection unit determining whether there is an error in the memory, a plurality of pass/fail flag registers capable of storing a pass/fail flag, a repair analyzer analyzing a memory error and generating a repair analysis result, a plurality of repair analysis result registers capable of storing the repair analysis result, and an output unit outputting the pass/fail flag and the repair analysis result.

Abstract: According to the present invention, there is provided a semiconductor integrated circuit having: a BIST including a data generator, an address generator, a control signal generator, a result analyzer, a BIST controller, and a diagnostic data storage circuit including a first capture register which captures and outputs, in accordance with a first clock, a latest address signal and the BIST state signal output from said BIST controller while the flag signal is in as state that no fault is detected, and maintains outputs when the flag signal is in a state that a fault is detected. The semiconductor integrated circuit can further include a memory collar having a memory cell, a second capture register, a comparator, and a flag register. The semiconductor integrated circuit can perform a fault diagnosing operation of a memory by using a comparator type BIST circuit.

Abstract: A one-hot data generating unit generates one-hot data for the maximum data bit width in which a state of one bit is exclusively inverted with respect to states of other bits while sequentially shifting a bit position to be inverted, and writes the one-hot data in an area of a memory designated by an address. A short defect between wirings connected to the memory is detected by comparing the one-hot data written in the memory with the one-hot data before being written.

Abstract: An on-chip failure analysis circuit for analyzing a memory comprises a memory in which data is stored, a built-in self test unit which tests the memory, an failure detection unit which detects an failure of output of the memory, an fail data storage unit in which fail data is stored, the fail data including a location of the failure, an failure analysis unit which performs failure analysis using the number of failures detected by the failure detection unit and the location of the failure, the failure analysis unit writing fail data including the analysis result in the fail data storage unit, and an analysis result output unit which outputs the analysis result of the failure analysis unit.